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28 Nov 2005

Volume 87, Issue 22, Articles (22xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 87, 221108 (2005); http://dx.doi.org/10.1063/1.2137458 (3 pages)

V. Barna, S. Ferjani, A. De Luca, R. Caputo, N. Scaramuzza, C. Versace, and G. Strangi
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Beneficial effects of annealing on amorphous Nb–Si thin-film thermometers

D. Querlioz, E. Helgren, D. R. Queen, F. Hellman, R. Islam, and David. J. Smith

Appl. Phys. Lett. 87, 221901 (2005); http://dx.doi.org/10.1063/1.2135380 (3 pages) | Cited 10 times

Online Publication Date: 21 November 2005

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Amorphous Nb–Si alloys have a temperature-dependent resistivity which can be tuned over many decades by controlling composition and are used for thin-film thermometers. Annealing at temperatures from 100 to 500 °C produces dramatic but easily controlled increases in resistivity, both magnitude and temperature dependence, for insulating and metallic samples with compositions ranging from 8–15 at. %Nb. A transition from metal to insulator is induced by annealing an initially metallic sample. Annealing produces thermal stability against subsequent heat treatment, allowing annealed films to be used as low-temperature thermometers even when they are cycled to temperatures as high as 500 °C. Cross-section transmission electron microscopy and energy-dispersive x-ray analysis show that the initially amorphous films develop Nb-rich clusters within an amorphous Nb-depleted matrix, explaining the observed resistivity increase.
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07.20.Dt Thermometers
61.72.Cc Kinetics of defect formation and annealing
68.37.Lp Transmission electron microscopy (TEM)

Experimental evidences for two paths in the dissolution process of B clusters in crystalline Si

D. De Salvador, E. Napolitani, G. Bisognin, A. Carnera, E. Bruno, S. Mirabella, G. Impellizzeri, and F. Priolo

Appl. Phys. Lett. 87, 221902 (2005); http://dx.doi.org/10.1063/1.2126128 (3 pages) | Cited 10 times

Online Publication Date: 21 November 2005

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We show that B clusters, produced by self-interstitial interaction with substitutional B in crystalline Si, dissolve under annealing according to two distinct paths with very different characteristic times. The two regimes generally coexist, but while the faster dissolution path is predominant for clusters formed at low B concentration (1×1019 B/cm3), the slower one is characteristic of clusters formed above the solubility limit and dominates the dissolution process at high B concentration (2×1020 B/cm3). The activation energies of both processes are characterized and discussed. It is showed that the faster path can be connected to mobile B direct emission from small clusters, while the slower path is demonstrated not to be self-interstitial limited and it is probably related to a more complex cluster dissolution process.
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64.75.-g Phase equilibria
61.72.J- Point defects and defect clusters
61.72.uf Ge and Si
61.72.Cc Kinetics of defect formation and annealing

Oxygen segregation to dislocations in GaN

M. E. Hawkridge and D. Cherns

Appl. Phys. Lett. 87, 221903 (2005); http://dx.doi.org/10.1063/1.2136224 (3 pages) | Cited 19 times

Online Publication Date: 21 November 2005

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The structure and composition of threading dislocations in GaN grown by hydride vapor phase epitaxy have been examined by electron microscopy. Transmission electron microscopy showed that the core structure of screw dislocations varied widely, alternating irregularly between open core (“nanopipe”) and closed core structures, with evidence that the equilibrium structure was a closed core configuration. A combination of electron energy loss spectroscopy and atomic resolution imaging in the scanning transmission electron microscope showed that the surfaces of nanopipes had 1.7±0.3 monolayers of nitrogen substituted by oxygen, and that closed core dislocations showed little evidence of oxygen segregation. It is argued that these results support a model where nanopipe formation is controlled by the segregation of oxygen by surface diffusion to surface pits, rather than dislocations per se. The implications for understanding the electronic properties of dislocations in GaN are discussed.
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68.37.Lp Transmission electron microscopy (TEM)
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
64.75.-g Phase equilibria
68.35.Fx Diffusion; interface formation
68.49.Jk Electron scattering from surfaces

Picosecond third-order nonlinearity of lead-oxide glasses in the infrared

Cid B. de Araújo, E. L. Falcão-Filho, A. Humeau, D. Guichaoua, G. Boudebs, and Luciana R. P. Kassab

Appl. Phys. Lett. 87, 221904 (2005); http://dx.doi.org/10.1063/1.2137457 (3 pages) | Cited 8 times

Online Publication Date: 22 November 2005

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Heavy metal-oxide glasses containing lead and bismuth were prepared, and their picosecond third-order nonlinear (NL) optical characteristics were investigated. NL refractive indices of ≈ 10−18 m2/W at 1064 nm were measured. Negligible NL absorption was verified and, as a consequence, the samples present a good factor-of-merit for photonic applications.
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42.65.-k Nonlinear optics
78.35.+c Brillouin and Rayleigh scattering; other light scattering
78.47.-p Spectroscopy of solid state dynamics
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Method to determine the melting temperatures of metals under megabar shock pressures

H. Tan, C. D. Dai, L. Y. Zhang, and C. H. Xu

Appl. Phys. Lett. 87, 221905 (2005); http://dx.doi.org/10.1063/1.2043248 (3 pages) | Cited 7 times

Online Publication Date: 22 November 2005

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Based on the model that the high-pressure melting temperatures of metals approximately equal the experimentally measured interface temperatures between the metallic plate sample and the transparent window when shock- and/or release-induced melting falls into the mixed phase region, we proposed a method to determine the melting temperatures of metals under megabars of shock compression. Experiments were conducted by using the oxygen-free high-conductivity copper, and pure iron plate sample with single-crystal lithium fluoride windows. Results showed that the measured melting temperatures are in good agreement with reported theoretical calculations.
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64.70.D- Solid-liquid transitions
62.50.-p High-pressure effects in solids and liquids

HfO2 high-k dielectrics grown on (100)Ge with ultrathin passivation layers: Structure and interfacial stability

J. W. Seo, Ch. Dieker, J.-P. Locquet, G. Mavrou, and A. Dimoulas

Appl. Phys. Lett. 87, 221906 (2005); http://dx.doi.org/10.1063/1.2137897 (3 pages) | Cited 21 times

Online Publication Date: 22 November 2005

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We have investigated the growth of HfO2 thin films on (100)Ge by molecular beam epitaxy. By means of transmission electron microscopy, the structural characteristics of the films grown on clean Ge surfaces are compared with those grown on passivation layers of GeOx and GeOxNy. The interface was found to be very flat and thin, with an interfacial layer one or two monolayer thick. However, traces of Ge in the oxide have been detected when deposited on either one of the interfacial layers, which can be explained by the instability of the interfacial layers grown with an atomic oxygen/nitrogen beam, prior to the HfO2 deposition.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.55.-g Dielectric thin films
68.55.A- Nucleation and growth
68.55.-a Thin film structure and morphology
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.35.Ct Interface structure and roughness
68.37.Lp Transmission electron microscopy (TEM)

Room-temperature epitaxial growth of GaN on lattice-matched ZrB2 substrates by pulsed-laser deposition

Y. Kawaguchi, J. Ohta, A. Kobayashi, and H. Fujioka

Appl. Phys. Lett. 87, 221907 (2005); http://dx.doi.org/10.1063/1.2137876 (3 pages) | Cited 23 times

Online Publication Date: 22 November 2005

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We have grown GaN films on ZrB2 substrates at room temperature (RT) by using a pulsed-laser deposition technique. Reflection high-energy electron diffraction observations have revealed that GaN growth can occur in a layer-by-layer mode, even at RT, and that the surfaces of the films are atomically flat. We found that intermixing reactions at the GaN/ZrB2 heterointerfaces, which have been the most serious problem for this structure until now, are well suppressed in the case of RT growth. Electron backscattered diffraction measurements have revealed that the tilt angle and the twist angle of the RT GaN are 0.23° and 0.24°, respectively, even for film thicknesses as low as 20 nm. The fact that RT GaN exhibits quite high crystallinity from the early stages of film growth can be attributed to the small lattice mismatch of this system.
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81.05.Ea III-V semiconductors
81.15.Fg Pulsed laser ablation deposition
68.55.A- Nucleation and growth
68.55.-a Thin film structure and morphology
68.49.Jk Electron scattering from surfaces
79.20.Kz Other electron-impact emission phenomena

In situ Auger electron spectroscopy studies of the growth of p-type microcrystalline silicon films on ZnO-coated glass substrates for microcrystalline silicon p-i-n solar cells

Takashi Fujibayashi and Michio Kondo

Appl. Phys. Lett. 87, 221908 (2005); http://dx.doi.org/10.1063/1.2135883 (3 pages) | Cited 1 time

Online Publication Date: 22 November 2005

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In situ Auger electron spectroscopy has been applied to investigate the growth process of hydrogenated microcrystalline Si (μc-Si:H)p layers on ZnO-coated glass substrates in plasma-enhanced chemical vapor deposition and the state of ZnO/p interface. A high hydrogen dilution induces a ZnO/p interface layer consisting of Si–O bonds to increase an induction period for the film growth and promotes a relaxation of strained Si–Si bond to result in a change in film growth mode from island to layer growth and a highly porous film for a nucleation of crystallites. Such changes in the initial growth influences a short circuit current of μc-Si:H p-i-n solar cells.
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81.05.Cy Elemental semiconductors
79.20.Fv Electron impact: Auger emission
52.77.Dq Plasma-based ion implantation and deposition
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
61.72.-y Defects and impurities in crystals; microstructure
84.60.Jt Photoelectric conversion
68.55.A- Nucleation and growth
68.55.-a Thin film structure and morphology

Visualization of the diffusion path in the fast oxide-ion conductor Bi1.4Yb0.6O3

Masatomo Yashima and Daiju Ishimura

Appl. Phys. Lett. 87, 221909 (2005); http://dx.doi.org/10.1063/1.2137894 (3 pages) | Cited 10 times

Online Publication Date: 23 November 2005

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Accurate nuclear-density distribution of bismuth oxide solution Bi1.4Yb0.6O3 compound has been studied at 384 °C and at 738 °C by the maximum-entropy method (MEM) and MEM-based pattern fitting combined with the Rietveld method using neutron powder diffraction data. The results reveal that the oxide ions have a complicated disorder spreading over a wide area, shift to the 〈111〉 directions from the ideal fluorite position and diffuse along the 〈100〉 directions.
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66.30.H- Self-diffusion and ionic conduction in nonmetals

Elastoplastic phase field model for microstructure evolution

X. H. Guo, San-Qiang Shi, and X. Q. Ma

Appl. Phys. Lett. 87, 221910 (2005); http://dx.doi.org/10.1063/1.2138358 (3 pages) | Cited 14 times

Online Publication Date: 23 November 2005

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Success has been obtained in predicting the dynamic evolution of microstructures during phase transformation or cracking propagation by using the time-dependent phase field methodology (PFM). However, most efforts of PFM were made in the elastic regime. In this letter, stress distributions around defects such as a hole and a crack in an externally loaded two-dimensional representative volume element were investigated by a proposed phase field model that took both the elastic and plastic deformations into consideration. Good agreement was found for static cases compared to the use of finite element analysis. Therefore, the proposed phase field model provides an opportunity to study the dynamic evolution of microstructures under plastic deformation.
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81.40.Lm Deformation, plasticity, and creep
62.20.F- Deformation and plasticity
64.60.-i General studies of phase transitions
64.70.K- Solid-solid transitions
81.40.Np Fatigue, corrosion fatigue, embrittlement, cracking, fracture, and failure
62.20.M- Structural failure of materials
62.20.D- Elasticity
81.40.Jj Elasticity and anelasticity, stress-strain relations

Amorphization/templated recrystallization method for changing the orientation of single-crystal silicon: An alternative approach to hybrid orientation substrates

K. L. Saenger, J. P. de Souza, K. E. Fogel, J. A. Ott, A. Reznicek, C. Y. Sung, D. K. Sadana, and H. Yin

Appl. Phys. Lett. 87, 221911 (2005); http://dx.doi.org/10.1063/1.2138795 (3 pages) | Cited 19 times

Online Publication Date: 23 November 2005

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We demonstrate that the crystal orientation of single-crystal silicon layers may be changed in selected areas from one orientation to another by an amorphization/templated recrystallization (ATR) process, and then introduce ATR as an alternative approach for fabricating planar hybrid orientation substrates with surface regions of (100)- and (110)-oriented Si. The ATR technique, applied to a starting substrate comprising a thin (50–200 nm) overlayer of (100) or (110) Si on a (110) or (100) Si handle wafer, consists of two process steps: (i) Si+ or Ge+ ion implantation to create an amorphous silicon (a-Si) layer extending from the top of the overlayer to a depth below the overlayer/handle wafer interface, and (ii) a thermal anneal to produce the handle-wafer-templated epitaxial recrystallization of the a-Si layer. Regions exposed to the ATR process assume the orientation of the handle wafer while regions not exposed to the ATR process retain their original orientation. The practicality of this approach is demonstrated with the fabrication of a planar hybrid orientation substrate comprising (100) and (110) Si regions separated by SiO2-filled trenches.
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81.05.Cy Elemental semiconductors
81.05.Gc Amorphous semiconductors
81.10.Jt Growth from solid phases (including multiphase diffusion and recrystallization)
61.50.-f Structure of bulk crystals
61.43.Dq Amorphous semiconductors, metals, and alloys
81.40.Gh Other heat and thermomechanical treatments
61.72.uf Ge and Si
61.80.Jh Ion radiation effects
61.72.Cc Kinetics of defect formation and annealing
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