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5 Dec 2005

Volume 87, Issue 23, Articles (23xxxx)

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Appl. Phys. Lett. 87, 234101 (2005); http://dx.doi.org/10.1063/1.2140082 (3 pages)

Ben McMillen, Chuck Jewart, Michael Buric, Kevin P. Chen, Yuankun Lin, and Wei Xu
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Improved electrical and material characteristics of HfTaO gate dielectrics with high crystallization temperature

M. H. Zhang, S. J. Rhee, C. Y. Kang, C. H. Choi, M. S. Akbar, S. A. Krishnan, T. Lee, I. J. Ok, F. Zhu, H. S. Kim, and Jack C. Lee

Appl. Phys. Lett. 87, 232901 (2005); http://dx.doi.org/10.1063/1.2138813 (3 pages) | Cited 7 times

Online Publication Date: 28 November 2005

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N-type metal-oxide-semiconductor field-effect transistors (N-MOSFETs) using HfTaO with varying Ta composition (20%, 30%, 40%, and 50%) have been fabricated and characterized. Crystallization temperatures of HfTaO with varying Ta composition were also measured. It was found that HfTaO with 40% Ta exhibited the highest crystallization temperature of 900 °C, while 35% and 52% HfTaO showed crystallization temperature of 800 °C. The results demonstrate that HfTaO N-MOSFETs exhibit higher electron mobility than controlled HfO2 devices. Among them, the transistor with 40% Ta shows the highest electron mobility.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
72.20.Fr Low-field transport and mobility; piezoresistance
85.30.Tv Field effect devices
64.70.K- Solid-solid transitions

Domain distributions in tetragonal Pb(Zr,Ti)O3 thin films probed by polarized Raman spectroscopy

Minoru Osada, Ken Nishida, Syunshuke Wada, Shoji Okamoto, Risako Ueno, Hiroshi Funakubo, and Takashi Katoda

Appl. Phys. Lett. 87, 232902 (2005); http://dx.doi.org/10.1063/1.2139844 (3 pages) | Cited 15 times

Online Publication Date: 29 November 2005

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We have investigated polarized Raman spectra of (001)/(100)-oriented tetragonal epitaxial Pb(ZrxTi1−x)O3 (PZT) thin films (x = ∼ 0.35) in which the volume fraction of the polar c domain is systematically varied from 4% to 96%. From polarization analyses using high epitaxial quality films, we have successfully isolated the A1 and B1 phonons from the E phonons, thus offering a distinctive evaluation of the c domains. As increasing c-domain volume, the A1(TO) modes linearly increase in their intensity. A remarkable correlation is found between the A1(1TO)-mode intensity and the c-domain volume for PZT films. We suggest that this correlation as well as the A1(1TO)-mode intensity provide a simple and useful probe for characterization of c-domain volume and ferroelectric properties in PZT-based devices.
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77.55.-g Dielectric thin films
77.80.Dj Domain structure; hysteresis
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
78.30.Hv Other nonmetallic inorganics
63.20.-e Phonons in crystal lattices

Dielectric constant dispersion of yttrium-doped (Ba,Sr)TiO3 films in the high-frequency (10 kHz–67 GHz) domain

Doo Seok Jeong, Cheol Seong Hwang, J. D. Baniecki, T. Shioga, K. Kurihara, N. Kamehara, and M. Ishii

Appl. Phys. Lett. 87, 232903 (2005); http://dx.doi.org/10.1063/1.2136429 (3 pages) | Cited 6 times

Online Publication Date: 29 November 2005

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The frequency dispersion of the dielectric constant of yttrium (Y)-doped (Ba,Sr)TiO3 thin films (Y-BST) in the high-frequency domain (10 kHz–67 GHz) was investigated. In order to remove the substantial parasitic capacitances, inductances, and resistances from the measured impedance data, test samples, short-circuit standard, and open-circuit standard structures were fabricated and their frequency response was measured. Before removing parasitic components, the measured dielectric response showed a rolloff at approximately 4 GHz. However, after circuit calibration, the dielectric constant was almost constant up to 40 GHz where another rolloff was observed. However, this rolloff was due to the uncompensated small parasitic components. Therefore, the dielectric constant of the Y-BST films (170 with a film thickness of 30 nm) showed small frequency dispersion corresponding to the Curie–von Schweidler dispersion, of which the exponent is −0.0131, up to 40 GHz. Furthermore, the decrease of the capacitance was 17% in the frequency range from 10 kHz to 40 GHz.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.55.-g Dielectric thin films
77.22.Ch Permittivity (dielectric function)
77.80.Dj Domain structure; hysteresis

Mechanism of electrical polarization of silica glass

Robert H. Doremus

Appl. Phys. Lett. 87, 232904 (2005); http://dx.doi.org/10.1063/1.2140090 (2 pages) | Cited 7 times

Online Publication Date: 1 December 2005

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When an electrical potential is applied to silica glass at 250 °C, there is a residual electrical field after the applied potential is removed. The profile of this field with distance is modeled as resulting from interdiffusion of sodium and hydronium ions; the shapes of the measured and calculated profiles of electrical field agree reasonably well, showing that this model describes the mechanism of poling the glass.
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77.22.Ej Polarization and depolarization
66.30.Ny Chemical interdiffusion; diffusion barriers
66.30.H- Self-diffusion and ionic conduction in nonmetals

Low-temperature crystallized pyrochlore bismuth zinc niobate thin films by excimer laser annealing

Jian-Gong Cheng, Junling Wang, Tanawadee Dechakupt, and Susan Trolier-McKinstry

Appl. Phys. Lett. 87, 232905 (2005); http://dx.doi.org/10.1063/1.2140071 (3 pages) | Cited 12 times

Online Publication Date: 1 December 2005

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The crystallization temperature of Bi1.5Zn0.5Nb1.5O6.5 (BZN) films was reduced by a combination of conventional heating and irradiation with a pulsed KrF excimer laser. Both the energy density and substrate temperature affect the properties of laser-annealed BZN films. It was found that the crystallinity and dielectric properties improved after a postannealing at 400 °C for 2 h in an oxygen atmosphere. BZN films crystallized with an energy density of 27 mJ/cm2 at a substrate temperature of 400 °C with postannealing showed dielectric properties comparable to those of rapid thermal annealed BZN films. Laser crystallization at substrate temperatures ⩽ 400 °C makes integration with polymeric substrates possible.
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77.55.-g Dielectric thin films
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
77.22.Ch Permittivity (dielectric function)
77.22.Gm Dielectric loss and relaxation
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Hafnium-doped tantalum oxide high-k dielectrics with sub-2 nm equivalent oxide thickness

Jiang Lu and Yue Kuo

Appl. Phys. Lett. 87, 232906 (2005); http://dx.doi.org/10.1063/1.2140482 (3 pages) | Cited 16 times

Online Publication Date: 1 December 2005

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Hafnium-doped tantalum oxide high dielectric constant films, i.e., with an equivalent oxide thickness as low as 1.3 nm, have been prepared and studied. The doped film has a bulk layer dielectric constant greater than 28 and an interface layer (formed with silicon substrate) dielectric constant greater than 8. The doping process changed the bulk and the interface layer structures as well as energy band gaps. The postdeposition annealing atmosphere showed major impacts on material and electrical properties. The new high-k material is a viable gate dielectric film for future metal-oxide-semiconductor transistors.
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77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
77.55.-g Dielectric thin films
61.72.up Other materials
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
77.22.Ch Permittivity (dielectric function)
68.35.Ct Interface structure and roughness
71.20.Ps Other inorganic compounds
81.40.Gh Other heat and thermomechanical treatments
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

Realization of 10 Tbit/in.2 memory density and subnanosecond domain switching time in ferroelectric data storage

Yasuo Cho, Sunao Hashimoto, Nozomi Odagawa, Kenkou Tanaka, and Yoshiomi Hiranaga

Appl. Phys. Lett. 87, 232907 (2005); http://dx.doi.org/10.1063/1.2140894 (3 pages) | Cited 31 times

Online Publication Date: 2 December 2005

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Nanosized inverted domain dots in ferroelectric materials have potential application in ultrahigh-density rewritable data storage systems. Herein, a data storage system is presented based on scanning nonlinear dielectric microscopy and a thin film of ferroelectric single-crystal lithium tantalite. Through domain engineering, nanosized inverted domain dots have been successfully formed at a data density above 10.1 Tbit/in.2 and subnanosecond (500 ps) domain switching speed has been achieved. Moreover, actual information storage is demonstrated at a density of 1 Tbit/in.2
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85.50.Gk Non-volatile ferroelectric memories
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.80.Dj Domain structure; hysteresis
77.80.Fm Switching phenomena
77.55.-g Dielectric thin films

Multiferroic composite ferroelectric-ferromagnetic films

M. A. Zurbuchen, T. Wu, S. Saha, J. Mitchell, and S. K. Streiffer

Appl. Phys. Lett. 87, 232908 (2005); http://dx.doi.org/10.1063/1.2135989 (3 pages) | Cited 24 times

Online Publication Date: 2 December 2005

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Multiferroic behavior was confirmed for epitaxial composite ferroelectric-ferromagnetic heterostructures, using a ferromagnetic crystal as both substrate and straining medium. Heterostructures having 2-2 connectivity (plane-on-plane) were fabricated by chemical solution deposition of Pb(Zr0.3,Ti0.7)O3 (PZT) thin films on La1.2Sr1.8Mn2O7 (LSMO) single crystal substrates. Magnetostriction (0.13%) of the substrate at its transition temperature ( ∼ 105 K) induces an abrupt 7.3% increase in switchable polarization of the PZT. This confirmation of elastic coupling induced by the onset of ferromagnetism is a first step toward fabricating such structures for study of the interrelationship of their magnetic and electrical field-dependent behaviors.
Show PACS
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.55.-g Dielectric thin films
77.80.Fm Switching phenomena
77.84.Lf Composite materials
75.80.+q Magnetomechanical effects, magnetostriction
77.22.Ej Polarization and depolarization
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