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5 Dec 2005

Volume 87, Issue 23, Articles (23xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 87, 234101 (2005); http://dx.doi.org/10.1063/1.2140082 (3 pages)

Ben McMillen, Chuck Jewart, Michael Buric, Kevin P. Chen, Yuankun Lin, and Wei Xu
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Intraband magnetoabsorption as a probing tool for the quantum dot charge

V. López-Richard, A. M. Alcalde, S. J. Prado, G. E. Marques, and C. Trallero-Giner

Appl. Phys. Lett. 87, 231101 (2005); http://dx.doi.org/10.1063/1.2138354 (3 pages) | Cited 2 times

Online Publication Date: 28 November 2005

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A method of characterizing the quantum dot charge buildup in a magnetic field is proposed based on the far-infrared magneto-optical response properties. The inherent topological symmetry of the nanostructure and several optical configurations are analyzed as key factors determining the appropriate use of intraband transitions as a probing tool for the quantum dot charge buildup.
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78.67.Hc Quantum dots
78.30.-j Infrared and Raman spectra

Recovery of time evolving fluorescence spectra via sum-frequency cross-correlation frequency resolved optical gating

Benjamin T. Langdon and Nancy E. Levinger

Appl. Phys. Lett. 87, 231102 (2005); http://dx.doi.org/10.1063/1.2138366 (3 pages) | Cited 1 time

Online Publication Date: 28 November 2005

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Sum-frequency conversion of sample emission with short light pulses has been used for time-resolved fluorescence of chromophores in solution. In contrast to traditional fluorescence upconversion techniques where the time resolved fluorescence signal is approximated from 10 to 15 different sum-frequency gated decays distributed across the fluorescence spectrum, sum-frequency cross-correlation frequency resolved optical gating offers the opportunity to determine the electric field of the sample fluorescence as a function of time. Dynamic quantities associated with changes in the sample emission, such as solvent relaxation, can then be obtained directly from the electric field without assumption of a particular spectral line shape.
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78.47.-p Spectroscopy of solid state dynamics
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
78.55.Bq Liquids

Non-Gaussian dark current noise in p-type quantum-well infrared photodetectors

Y. Paltiel, N. Snapi, A. Zussman, and G. Jung

Appl. Phys. Lett. 87, 231103 (2005); http://dx.doi.org/10.1063/1.2138787 (3 pages) | Cited 2 times

Online Publication Date: 28 November 2005

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Bias-dependent non-Gaussian dark current noise has been observed in p-type quantum-well infrared photodetectors. Time domain analysis of the noise revealed two-level telegraphlike fluctuations with exponentially distributed lifetimes that change dramatically with changing bias. The nature of the non-Gaussian fluctuations at intermediate voltages is ascribed to switching between two electric-field distributions corresponding to distinct tunneling probabilities out of the quantum wells. The finite transition time between the levels is identified with the recharging time.
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07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
05.40.-a Fluctuation phenomena, random processes, noise, and Brownian motion

High-resolution differential thermography of integrated circuits with optical feedback laser scanning microscopy

Carlo Mar Blanca, Vernon Julius Cemine, Vera Marie Sastine, and Caesar Saloma

Appl. Phys. Lett. 87, 231104 (2005); http://dx.doi.org/10.1063/1.2138794 (3 pages) | Cited 2 times

Online Publication Date: 28 November 2005

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We demonstrate a noninvasive technique for generating differential thermal maps of semiconductor edifices in integrated circuits (IC) at diffraction-limited resolution. An inexpensive optical feedback laser-scanning microscope detects changes in the optical beam-induced currents (OBIC) that are produced in the active layer in response to variations in the IC package temperature. The OBIC yield of a semiconductor normally increases with temperature. A differential thermal map derived from the OBIC output variations, shows locations of high thermal activity in the active layer including anomalous regions where the OBIC outputs decrease with increasing temperature. Anomalous regions are loci of accumulating semiconductor electrical resistance that are highly susceptible to device failure. They provide the best jump-off points for efficient and accurate IC fault analysis procedure.
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07.60.Pb Conventional optical microscopes
07.79.-v Scanning probe microscopes and components
07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
07.20.-n Thermal instruments and apparatus
85.40.Qx Microcircuit quality, noise, performance, and failure analysis
85.30.De Semiconductor-device characterization, design, and modeling

Nonvolatile multilevel conductance and memory effects in organic thin films

M. Lauters, B. McCarthy, D. Sarid, and G. E. Jabbour

Appl. Phys. Lett. 87, 231105 (2005); http://dx.doi.org/10.1063/1.2138809 (3 pages) | Cited 20 times

Online Publication Date: 28 November 2005

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Organic thin-film structures, including organic light-emitting diodes, are demonstrated to contain multiple nonvolatile conductance states at low-read voltages. Retention time of states is more than several weeks, and more than 20 000 write-read-rewrite-read cycles have been performed with minimal degradation. The electrical characteristics of these devices are consistent with metal diffusion or filament phenomena found in metal-insulator-metal structures, suggesting a possible mechanism by which the states are stored.
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73.61.Ph Polymers; organic compounds
85.60.Jb Light-emitting devices

Hole-injecting conducting-polymer compositions for highly efficient and stable organic light-emitting diodes

Tae-Woo Lee, Ohyun Kwon, Mu-Gyeom Kim, Sang Hun Park, Jaegwan Chung, Sang Yeol Kim, Youngsu Chung, Joon-Yong Park, Eunsil Han, Dal Ho Huh, Jong-Jin Park, and Lyongsun Pu

Appl. Phys. Lett. 87, 231106 (2005); http://dx.doi.org/10.1063/1.2132072 (3 pages) | Cited 33 times

Online Publication Date: 29 November 2005

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This letter introduces conducting polymer compositions which can be used for hole-injection layer in organic light-emitting diodes. The compositions are composed of poly (3,4-ethylenedioxythiophene) (PEDOT), polystyrene sulfonic acid (PSS) and a perfluorinated ionomer. The films based on these compositions showed much higher workfunction ( ∼ 5.3–5.7 eV) than conventional PEDOT/PSS ( ∼ 5.0–5.2 eV). When we fabricated blue polymer light-emitting diodes by using these compositions as a hole-injection layer, the luminescent efficiency was improved and the device lifetime was also enhanced relative to the device using the commercially available PEDOT/PSS. These compositions including perfluorinated ionomers can be one of the promising candidates for a hole-injection layer in organic light-emitting devices.
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85.60.Jb Light-emitting devices

Doubling the optical efficiency of a chiral liquid crystal laser using a reflector

Ying Zhou, Yuhua Huang, Alexandra Rapaport, Michael Bass, and Shin-Tson Wu

Appl. Phys. Lett. 87, 231107 (2005); http://dx.doi.org/10.1063/1.2138353 (3 pages) | Cited 20 times

Online Publication Date: 29 November 2005

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A simple method for doubling the laser emission efficiency of Nd:yttrium-aluminum-garnet pumped cholesteric liquid crystal (CLC) photonic band edge lasers is demonstrated. By adding a mirror or a CLC reflector behind the dye-doped CLC cell, the lasing intensity is nearly doubled. For the mirror reflector, due to the mixing of right-handed and left-handed circular polarizations, the output laser is basically unpolarized. However, for the CLC reflector, a partially coherent laser can be built in which either right-handed or left-handed circularly polarized laser could dominate the output, depending on the handedness of the cholesteric structure.
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42.55.Tv Photonic crystal lasers and coherent effects
42.70.Df Liquid crystals
42.70.Qs Photonic bandgap materials
42.60.By Design of specific laser systems
42.79.Bh Lenses, prisms and mirrors
42.79.Kr Display devices, liquid-crystal devices

Low-loss quasi-planar ridge waveguides formed on thin silicon-on-insulator

M. A. Webster, R. M. Pafchek, G. Sukumaran, and T. L. Koch

Appl. Phys. Lett. 87, 231108 (2005); http://dx.doi.org/10.1063/1.2139836 (3 pages) | Cited 20 times

Online Publication Date: 30 November 2005

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Low-loss, quasi-planar ridge waveguide structures have been designed and fabricated in silicon-on-insulator material with waveguide propagation losses of <0.7 dB/cm at 1550 nm, and a Q ∼ 106 measured in a ring resonator configuration. These structures offer tight vertical field confinement with scalable bending losses, and should be of interest for integration with both active and passive components. Waveguides were fabricated using optical lithography and processing compatible with silicon electronics.
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42.82.Et Waveguides, couplers, and arrays
42.15.Eq Optical system design
42.82.Cr Fabrication techniques; lithography, pattern transfer
42.79.Gn Optical waveguides and couplers
42.86.+b Optical workshop techniques

Ultrahigh speed germanium-on-silicon-on-insulator photodetectors for 1.31 and 1.55 μm operation

M. Rouvière, L. Vivien, X. Le Roux, J. Mangeney, P. Crozat, C. Hoarau, E. Cassan, D. Pascal, S. Laval, J.-M. Fédéli, J.-F. Damlencourt, J. M. Hartmann, and S. Kolev

Appl. Phys. Lett. 87, 231109 (2005); http://dx.doi.org/10.1063/1.2139837 (3 pages) | Cited 26 times

Online Publication Date: 30 November 2005

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We report the fabrication and the characterization of interdigited metal-germanium on silicon metal photodetectors (metal-semiconductor-metal or MSM) for operation at both optical telecommunication wavelengths: 1.31 and 1.55 μm. Femtosecond impulse and frequency experiments have been carried out to characterize those MSM Ge photodetectors. For both wavelengths, the measured 3 dB bandwidth under 2 V bias are close to 10, 18, 20, and 35 GHz for electrode spacings equal to 2000, 1000, 700, and 500 nm, respectively.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
42.82.Gw Other integrated-optical elements and systems
42.65.Re Ultrafast processes; optical pulse generation and pulse compression
85.40.-e Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology

Demonstration of a semipolar (10mathmath) InGaN/GaN green light emitting diode

R. Sharma, P. M. Pattison, H. Masui, R. M. Farrell, T. J. Baker, B. A. Haskell, F. Wu, S. P. DenBaars, J. S. Speck, and S. Nakamura

Appl. Phys. Lett. 87, 231110 (2005); http://dx.doi.org/10.1063/1.2139841 (3 pages) | Cited 90 times

Online Publication Date: 30 November 2005

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We demonstrate the growth and fabrication of a semipolar (10mathmath) InGaN/GaN green ( ∼ 525 nm) light emitting diode (LED). The fabricated devices demonstrated a low turn-on voltage of 3.2 V and a series resistance of 14.3 Ω. Electroluminescence measurements on the semipolar LED yielded a reduced blueshifting of the peak emission wavelength with increasing drive current, compared to a reference commercial c-plane LED. On-wafer measurements yielded an approximately linear increase in output power with drive current, with measured values of 19.3 and 264 μW at drive currents of 20 and 250 mA, respectively. The external quantum efficiency did not decrease appreciably at high currents. Polarization anisotropy was also observed in the electroluminescence from the semipolar green LED, with the strongest emission intensity parallel to the [1math10] direction. A polarization ratio of 0.32 was obtained at a drive current of 20 mA.
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85.60.Jb Light-emitting devices

All-optical switching of defect mode in two-dimensional nonlinear organic photonic crystals

Xiaoyong Hu, Qihuang Gong, Yuanhao Liu, Bingying Cheng, and Daozhong Zhang

Appl. Phys. Lett. 87, 231111 (2005); http://dx.doi.org/10.1063/1.2140092 (3 pages) | Cited 27 times

Online Publication Date: 30 November 2005

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An all-optical switching is demonstrated by use of defect mode in two-dimensional nonlinear photonic crystals made of polystyrene. Transmittance contrast of about 70% is achieved for the probe light. The dynamical shifts of the defect mode induced by pump intensity are measured and analyzed in detail. It is found that the defect mode shifts 5 nm under the excitation of 18.7 GW/cm2 pump intensity, which is in agreement with the theoretical predictions. Time response of the optical switching is smaller than the laser pulse of about 10 ps.
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42.65.Pc Optical bistability, multistability, and switching, including local field effects
42.70.Qs Photonic bandgap materials
42.70.Jk Polymers and organics

Influence of composition diffusion on the band structures of InGaNAs/GaAs quantum wells investigated by the band-anticrossing model

Y. N. Qiu, J. M. Rorison, H. D. Sun, S. Calvez, M. D. Dawson, and A. C. Bryce

Appl. Phys. Lett. 87, 231112 (2005); http://dx.doi.org/10.1063/1.2138350 (3 pages) | Cited 5 times

Online Publication Date: 30 November 2005

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We investigate the influence of quantum-well intermixing (QWI) on the electronic band structure of GaInNAs/GaAs multiquantum wells. The band structures and optical transitions have been calculated based on the band-anticrossing (BAC) model and Fick’s interdiffusion law for both intermixed and nonintermixed samples, respectively. The calculated results are consistent with the true optical transitions observed by photoluminescence excitation spectroscopy and secondary ion mass spectroscopy. Our investigation indicates that BAC model is valid for interdiffused quantum wells and verifies that the QWI process in GaInNAs/GaAs multiquantum wells is induced mainly by the interdiffusion of In–Ga between the quantum wells and barriers.
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71.20.Nr Semiconductor compounds
66.30.Ny Chemical interdiffusion; diffusion barriers

Optimizing the superlens: Manipulating geometry to enhance the resolution

Viktor A. Podolskiy, Nicholas A. Kuhta, and Graeme W. Milton

Appl. Phys. Lett. 87, 231113 (2005); http://dx.doi.org/10.1063/1.2139620 (3 pages) | Cited 19 times

Online Publication Date: 30 November 2005

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We analyze the performance of a planar lens based on realistic negative index material in a generalized geometry. We demonstrate that the conventional superlens design (where the lens is centered between the object and the image) is not optimal from the resolution point of view, develop an analytical expression for the resolution limit of a generalized lens, use it to find the optimum lens configuration, and calculate the maximum absorption practical nearfield superlenses may have. We demonstrate that in contrast to the conventional superlens picture, planar imaging is typically accompanied by excitation of surface waves at both interfaces of the lens.
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42.79.Bh Lenses, prisms and mirrors
42.15.Eq Optical system design

Optical properties of self-organized wurtzite InN/GaN quantum dots: A combined atomistic tight-binding and full configuration interaction calculation

N. Baer, S. Schulz, S. Schumacher, P. Gartner, G. Czycholl, and F. Jahnke

Appl. Phys. Lett. 87, 231114 (2005); http://dx.doi.org/10.1063/1.2139621 (3 pages) | Cited 23 times

Online Publication Date: 30 November 2005

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In this work, we investigate the electronic and optical properties of self-assembled InN/GaN quantum dots. The one-particle states of the low-dimensional heterostructures are provided by a tight-binding model that fully includes the wurtzite crystal structure on an atomistic level. Optical dipole and Coulomb matrix elements are calculated from these one-particle wave functions and serve as an input for full configuration interaction calculations. We present multiexciton emission spectra and discuss in detail how Coulomb correlations and oscillator strengths are changed by the piezoelectric fields present in the structure. Vanishing exciton and biexciton ground state emission for small lens-shaped dots is predicted.
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78.67.Hc Quantum dots
78.66.Fd III-V semiconductors
71.15.Ap Basis sets (LCAO, plane-wave, APW, etc.) and related methodology (scattering methods, ASA, linearized methods, etc.)
73.21.La Quantum dots
77.65.-j Piezoelectricity and electromechanical effects

Index and gain dynamics of optically pumped GaInNAs vertical-cavity semiconductor optical amplifiers

Nicolas Laurand, Stephane Calvez, Martin D. Dawson, and Anthony E. Kelly

Appl. Phys. Lett. 87, 231115 (2005); http://dx.doi.org/10.1063/1.2140068 (3 pages) | Cited 3 times

Online Publication Date: 1 December 2005

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To study the dynamic effects in GaInNAs vertical-cavity semiconductor amplifiers (VCSOAs), we carried out a pump-probe experiment on an optically biased VCSOA, first at antiresonance and then in gain. At antiresonance, the highest absorption region of the amplifier, the carrier-population-depletion-induced shift in the wavelength of the absorption was measured as a function of pump-probe delay. The corresponding index recovery time was measured to be τ ∼ 50 ps±5 ps. In the amplification regime, we observed that the carrier depletion induced by the pump pulse decreased the available gain. The recovery time for the device gain in dB under these conditions was measured at τ ∼ 55±15 ps. These results indicate that GaInNAs VCSOAs can process data at 10 Gbits/s with no patterning effect.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.65.Re Ultrafast processes; optical pulse generation and pulse compression

Optical gain at 650 nm from a polymer waveguide with dye-doped cladding

M. A. Reilly, B. Coleman, E. Y. B. Pun, R. V. Penty, I. H. White, M. Ramon, R. Xia, and D. D. C. Bradley

Appl. Phys. Lett. 87, 231116 (2005); http://dx.doi.org/10.1063/1.2140074 (3 pages) | Cited 21 times

Online Publication Date: 1 December 2005

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Signal amplification at the polymer optical fiber low-loss window of 650 nm is reported in an SU8 rib waveguide coated with Rhodamine-640 doped poly(methyl methacrylate). A signal beam is end-fired into the facet of a 7×100 μm waveguide and amplified by top pumping of the 2‐μm-thick cladding region with a pulsed pump source focused into a 9-mm-long stripe. A gain of 14dB and a minimum signal-to-noise ratio of around 2 dB are achieved in a 15-mm-long device with a low threshold pump intensity of 0.25 μJ/mm2, which is an order of magnitude lower than previously reported.
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42.55.Wd Fiber lasers
42.70.Jk Polymers and organics
42.70.Hj Laser materials
42.81.Dp Propagation, scattering, and losses; solitons

Oxyfluoride glass for high-energy laser windows: Thermal lensing issue

Claude A. Klein

Appl. Phys. Lett. 87, 231117 (2005); http://dx.doi.org/10.1063/1.2140877 (3 pages) | Cited 2 times

Online Publication Date: 1 December 2005

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Recently, a glass composition identified as oxyfluoride glass (OFG™) has stimulated great expectations in terms of creating “athermal” high-energy laser (HEL) windows. A proper evalution of the two thermal lensing coefficients, however, indicates that (a) the intrinsic stress birefringence cannot be ignored (χ− = −2.88×10−7 K−1), and (b) the evaluation of χ+ (χ+ = 5.87×10−7 K−1) must include the stress-optic contribution. Strehl-ratio calculations demonstrate that, in the absence of stress-driven failure modes, HEL windows made of OFG outperform fused-silica windows but may not match the capability of windows made of fusion-cast CaF2.
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42.70.Ce Glasses, quartz
78.20.Fm Birefringence
42.79.Ci Filters, zone plates, and polarizers

Current crowding in graded contact layers of intracavity-contacted oxide-confined vertical-cavity surface-emitting lasers

V. V. Lysak, K. S. Chang, and Y. T. Lee

Appl. Phys. Lett. 87, 231118 (2005); http://dx.doi.org/10.1063/1.2140886 (3 pages) | Cited 1 time

Online Publication Date: 1 December 2005

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In this work we present the simulation of the intracavity-contacted oxide-confined vertical-cavity surface-emitting lasers including the thermal effects. We analyze the thermal, electrical, and optical properties of such devices with the different thicknesses of graded layers between the contact and oxide confined layers. Results of simulations for the devices with graded layer thickness of 40–60 Å show a reduced current crowding effect.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

All-optical control of the resonant-photon tunneling effect observed in GaAs/AlGaAs multilayered structures containing quantum dots

Naokatsu Yamamoto, Kouichi Akahane, Shin-Ichirou Gozu, and Naoki Ohtani

Appl. Phys. Lett. 87, 231119 (2005); http://dx.doi.org/10.1063/1.2140887 (3 pages) | Cited 1 time

Online Publication Date: 1 December 2005

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We observed the resonant-photon tunneling (RPT) effect at the 1.5 μm optical communications waveband in a GaAs/AlGaAs multilayered structure containing InGaSb quantum dots (QDs) as an active medium by a silicon prism total-reflection measurement. A sharp reflectance dip due to the RPT effect was clearly observed at a resonant-incidence angle in the total reflection region. The resonant-incidence angle clearly shifted when control light was irradiated onto the QD active layer. We demonstrated that the reflectance around the resonant-incidence angle can be controlled all-optically using the control light irradiation. These results clearly indicate the possibility of creating RPT devices for all-optical signal processing in the optical communication wavebands.
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78.67.Pt Multilayers; superlattices; photonic structures; metamaterials
78.67.Hc Quantum dots
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials

Location control of giant silicon grains using organic lenses

Jae Hwan Oh, Eun Hyun Kim, Sang Kyu Kim, Jun Hyuk Cheon, Yong Duck Son, and Jin Jang

Appl. Phys. Lett. 87, 231120 (2005); http://dx.doi.org/10.1063/1.2140585 (3 pages) | Cited 5 times

Online Publication Date: 1 December 2005

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We studied the location control of a giant grain of polycrystalline silicon produced by Ni-mediated crystallization of amorphous silicon (a-Si) using a cap layer. An organic lens made of acryl was used for the focusing of light for the seed formation and subsequent crystallization. A single grain 62 μm in diameter was made using an 80-μm-square SiNx cap layer on the a-Si. The position of a thin-film transistor (TFT) on a grain can be controlled, so that a single grain TFT can be fabricated at a predetermined position without use of the laser annealing technique.
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42.86.+b Optical workshop techniques
42.79.Bh Lenses, prisms and mirrors
61.43.Dq Amorphous semiconductors, metals, and alloys

GaAs-based room-temperature continuous-wave 1.59 μm GaInNAsSb single-quantum-well laser diode grown by molecular-beam epitaxy

Z. C. Niu, S. Y. Zhang, H. Q. Ni, D. H. Wu, H. Zhao, H. L. Peng, Y. Q. Xu, S. Y. Li, Z. H. He, Z. W. Ren, Q. Han, X. H. Yang, Y. Du, and R. H. Wu

Appl. Phys. Lett. 87, 231121 (2005); http://dx.doi.org/10.1063/1.2140614 (3 pages) | Cited 18 times

Online Publication Date: 1 December 2005

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Starting from the growth of high-quality 1.3 μm GaInNAs/GaAs quantum well (QW), the QW emission wavelength has been extended up to 1.55 μm by a combination of lowering growth rate, using GaNAs barriers and incorporating some amount of Sb. The photoluminescence properties of 1.5 μm range GaInNAsSb/GaNAs QWs are quite comparable to the 1.3 μm QWs, revealing positive effect of Sb on improving the optical quality of the QWs. A 1.59 μm lasing of a GaInNAsSb/GaNAs single-QW laser diode is obtained under continuous current injection at room temperature. The threshold current density is 2.6 kA/cm2 with as-cleaved facet mirrors.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
78.55.Cr III-V semiconductors
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