APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue

26 Dec 2005

Volume 87, Issue 26, Articles (26xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 87, 263102 (2005); http://dx.doi.org/10.1063/1.2150278 (3 pages)

Z. Zhong, G. Katsaros, M. Stoffel, G. Costantini, K. Kern, O. G. Schmidt, N. Y. Jin-Phillipp, and G. Bauer
Enlarge Image | Read More
Return to All Sections
back to top
RSS Feeds

Improved breakdown voltage and impact ionization in InAlAs/InGaAs metamorphic high-electron-mobility transistor with a liquid phase oxidized InGaAs gate

Kuan-Wei Lee, Nan-Ying Yang, Mau-Phon Houng, Yeong-Her Wang, and Po-Wen Sze

Appl. Phys. Lett. 87, 263501 (2005); http://dx.doi.org/10.1063/1.2151252 (3 pages) | Cited 6 times

Online Publication Date: 19 December 2005

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The In0.52Al0.48As/In0.53Ga0.47As metal-oxide-semiconductor metamorphic high-electron-mobility transistors (MOS-MHEMTs) with a thin InGaAs native oxide layer ( ∼ 10–15 nm) are demonstrated. The gate dielectric is directly obtained by oxidizing InGaAs material in a liquid phase solution. As compared to its counterpart MHEMTs, the MOS-MHEMTs have larger gate swing voltages, higher gate-to-drain breakdown voltages, and lower gate leakage currents with the suppressed impact ionization effect due to its higher barrier height.
Show PACS
85.30.Tv Field effect devices
81.65.Mq Oxidation

Vacuum level alignment at organic/metal junctions: “Cushion” effect and the interface dipole

Gregor Witte, Simon Lukas, Paul S. Bagus, and Christof Wöll

Appl. Phys. Lett. 87, 263502 (2005); http://dx.doi.org/10.1063/1.2151253 (3 pages) | Cited 69 times

Online Publication Date: 21 December 2005

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The electronic level alignment of various organic molecules on metal surfaces has been determined by a combined experimental and theoretical effort. Using ab initio electronic structure calculations, it is demonstrated that the commonly observed interface dipole is largely due to a quantum-mechanical phenomenon resulting from exchange repulsion. Surprisingly, this physical effect, also referred to as Pauli repulsion dominates even in the case of aromatic molecules on Cu and Au surfaces, i.e., on interfaces that are of key importance in molecular electronics.
Show PACS
71.15.-m Methods of electronic structure calculations
71.45.Gm Exchange, correlation, dielectric and magnetic response functions, plasmons
71.70.Gm Exchange interactions
85.65.+h Molecular electronic devices
73.40.Ns Metal-nonmetal contacts

Highly efficient microcrystalline silicon solar cells deposited from a pure SiH4 flow

M. N. van den Donker, B. Rech, F. Finger, W. M. M. Kessels, and M. C. M. van de Sanden

Appl. Phys. Lett. 87, 263503 (2005); http://dx.doi.org/10.1063/1.2152115 (3 pages) | Cited 33 times

Online Publication Date: 22 December 2005

Full Text: Read Online (HTML) | Download PDF

Show Abstract
A time-resolved optical emission spectroscopic study identified transient behavior of the excited SiH emission in a parallel plate SiH4/H2 plasma. The transient behavior could be prevented by filling the background gas with H2 prior to plasma ignition. Applying this condition, state-of-the-art microcrystalline silicon (μc-Si:H) could be deposited irrespective of the applied H2 flow, ultimately demonstrated by a 9.5% efficient solar cell deposited from pure SiH4. The results are discussed in terms of SiH4 back diffusion: an initial diffusion flux of SiH4 from the reactor’s dead volume back into the plasma.
Show PACS
84.60.Jt Photoelectric conversion
52.77.Dq Plasma-based ion implantation and deposition

Implication of device functioning due to back reaction of electrons via the conducting glass substrate in dye sensitized solar cells

Sarmimala Hore and Rainer Kern

Appl. Phys. Lett. 87, 263504 (2005); http://dx.doi.org/10.1063/1.2149215 (3 pages) | Cited 24 times

Online Publication Date: 22 December 2005

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Enhanced efficiency of dye sensitized solar cells requires minimization of all electron losses in the device. In addition to the loss via the nanoparticles of TiO2, the loss via the surface of the conducting glass substrate (TCO) needs to be contained. This additional electron recombination pathway at the TCO becomes increasingly pronounced at low light intensities. Hence, the determination of the lifetime of electrons within the nanoparticles of TiO2 requires a resistive layer at the surface of the TCO. Lowering the electron loss at the TCO/electrolyte interface increases the shunt resistance, thereby increasing the fill factor by over 10%.
Show PACS
84.60.Jt Photoelectric conversion
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths

Effective Schottky barrier lowering in silicon-on-insulator Schottky-barrier metal-oxide-semiconductor field-effect transistors using dopant segregation

J. Knoch, M. Zhang, Q. T. Zhao, St. Lenk, S. Mantl, and J. Appenzeller

Appl. Phys. Lett. 87, 263505 (2005); http://dx.doi.org/10.1063/1.2150581 (3 pages) | Cited 21 times

Online Publication Date: 23 December 2005

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We present an investigation of the use of dopant segregation in Schottky-barrier metal-oxide-semiconductor field-effect transistors on silicon-on-insulator. Experimental results on devices with fully nickel silicided source and drain contacts show that arsenic segregation during silicidation leads to strongly improved device characteristics due to a strong conduction/valence band bending at the contact interface induced by a very thin, highly doped silicon layer formed during the silicidation. With simulations, we study the effect of varying silicon-on-insulator and gate oxide thicknesses on the performance of Schottky-barrier devices with dopant segregation. It is shown that due to the improved electrostatic gate control, a combination of both ultrathin silicon bodies and gate oxides with dopant segregation yields even further improved device characteristics greatly relaxing the need for low Schottky barrier materials in order to realize high-performance Schottky-barrier transistors.
Show PACS
85.30.Tv Field effect devices
73.30.+y Surface double layers, Schottky barriers, and work functions
85.40.Ry Impurity doping, diffusion and ion implantation technology

Current-induced vortex unbinding in bolometer mixers

R. Barends, M. Hajenius, J. R. Gao, and T. M. Klapwijk

Appl. Phys. Lett. 87, 263506 (2005); http://dx.doi.org/10.1063/1.2158510 (3 pages) | Cited 20 times

Online Publication Date: 27 December 2005

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We present a description of the current-voltage characteristics of hot electron bolometers in terms of the current-dependent intrinsic resistive transition of NbN films. We find that, by including this current dependence, we can correctly predict the complete current-voltage characteristics, showing excellent agreement with measurements for both low and high bias and for small as well as large devices. It is assumed that the current dependence is due to vortex-antivortex unbinding as described in the Berezinskii–Kosterlitz–Thouless theory. The presented approach will be useful in guiding device optimization for noise and bandwidth.
Show PACS
07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
85.60.Gz Photodetectors (including infrared and CCD detectors)
84.30.Qi Modulators and demodulators; discriminators, comparators, mixers, limiters, and compressors

Electrode dependence of resistance switching in polycrystalline NiO films

S. Seo, M. J. Lee, D. C. Kim, S. E. Ahn, B.-H Park, Y. S. Kim, I. K. Yoo, I. S. Byun, I. R. Hwang, S. H. Kim, J.-S. Kim, J. S. Choi, J. H. Lee, S. H. Jeon, S. H. Hong, et al.

Appl. Phys. Lett. 87, 263507 (2005); http://dx.doi.org/10.1063/1.2150580 (3 pages) | Cited 33 times

Online Publication Date: 29 December 2005

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We investigated resistance switching in top-electrode/NiO/Pt structures where the top electrode was Au, Pt, Ti, or Al. For Pt/NiO/Pt and Au/NiO/Pt structures with ohmic contacts, the effective electric field inside the film was high enough to induce trapping or detrapping at defect states and thus resistance switching. For a Ti/NiO/Pt structure with well-defined Schottky contact at Ti/NiO interface accompanied by an appreciable voltage drop, the effective electric field inside the NiO film was not enough to induce resistance switching. For an Al/NiO/Pt structure with a low Schottky barrier at the Al/NiO interface, resistance switching could be induced at a higher voltage since the voltage drop at the Al/NiO interface was not negligible but small.
Show PACS
73.40.Ns Metal-nonmetal contacts
73.30.+y Surface double layers, Schottky barriers, and work functions
73.20.Hb Impurity and defect levels; energy states of adsorbed species
Return to All Sections
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close