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26 Dec 2005

Volume 87, Issue 26, Articles (26xxxx)

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Appl. Phys. Lett. 87, 263102 (2005); http://dx.doi.org/10.1063/1.2150278 (3 pages)

Z. Zhong, G. Katsaros, M. Stoffel, G. Costantini, K. Kern, O. G. Schmidt, N. Y. Jin-Phillipp, and G. Bauer
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Temperature control of electromigration to form gold nanogap junctions

G. Esen and M. S. Fuhrer

Appl. Phys. Lett. 87, 263101 (2005); http://dx.doi.org/10.1063/1.2149174 (3 pages) | Cited 38 times

Online Publication Date: 19 December 2005

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Controlled electromigration of gold nanowires of different cross-sectional areas to form nanogap junctions is studied using a feedback method. A linear correlation between the cross-sectional area of the gold nanowires and the power dissipated in the junction during electromigration is observed, indicating that the feedback mechanism operates primarily by controlling the temperature of the junction during electromigration. We also show that the role of the external feedback circuit is to prevent thermal runaway; minimization of series resistance allows controlled electromigration to a significant range of junction resistances with a simple voltage ramp.
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66.30.Qa Electromigration

Periodic pillar structures by Si etching of multilayer GeSi/Si islands

Z. Zhong, G. Katsaros, M. Stoffel, G. Costantini, K. Kern, O. G. Schmidt, N. Y. Jin-Phillipp, and G. Bauer

Appl. Phys. Lett. 87, 263102 (2005); http://dx.doi.org/10.1063/1.2150278 (3 pages) | Cited 8 times

Online Publication Date: 21 December 2005

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Laterally aligned multilayer GeSi/Si islands grown on a patterned Si (001) substrate are disclosed by selective etching of Si in a KOH solution. This procedure allows us to visualize the vertical alignment of the islands in a three-dimensional perspective. Our technique reveals that partly coalesced double islands in the initial layer do not merge together, but instead gradually reproduce into well-separated double islands in upper layers. We attribute this effect to very thin spacer layers, which efficiently transfer the strain modulation of each island through the spacer layer to the surface. The etching rate of Si is reduced in tensile strained regions, which helps to preserve sufficient Si between the stacked islands to form a periodic array of freestanding and vertically modulated heterostructure pillars.
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81.07.-b Nanoscale materials and structures: fabrication and characterization
81.05.Hd Other semiconductors
81.65.Cf Surface cleaning, etching, patterning
68.65.Ac Multilayers
68.47.Fg Semiconductor surfaces

Nanoscale capacitors based on metal-insulator-carbon nanotube-metal structures

J. E. Jang, S. N. Cha, Y. Choi, G. A. J. Amaratunga, D. J. Kang, D. G. Hasko, J. E. Jung, and J. M. Kim

Appl. Phys. Lett. 87, 263103 (2005); http://dx.doi.org/10.1063/1.2149982 (3 pages) | Cited 15 times

Online Publication Date: 21 December 2005

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We report the fabrication process and the electrical characteristics of a nanocapacitor structure using metal-insulator-carbon nanotube-metal layers. The structure shows high capacitance and the possibility of ultrahigh integration density due to the unique nanotube structure. Nanoscale and high-aspect-ratio patterns are achieved by electron beam lithography for the fabrication of these vertical nanostructures. This structure can be substituted for capacitors based on the silicon pillar structure in dynamic random access memory or as a nanoscale capacitor for various nanoelectronic devices.
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84.32.Tt Capacitors
85.35.Kt Nanotube devices

Nucleation of InN quantum dots on GaN by metalorganic vapor phase epitaxy

J. G. Lozano, A. M. Sánchez, R. García, D. González, D. Araújo, S. Ruffenach, and O. Briot

Appl. Phys. Lett. 87, 263104 (2005); http://dx.doi.org/10.1063/1.2152110 (3 pages) | Cited 18 times

Online Publication Date: 21 December 2005

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InN quantum dots (QDs) on GaN (0001) grown by metalorganic vapor phase epitaxy onto a sapphire substrate were studied by transmission electron microscopy (TEM). We found that the nucleation of InN QDs on GaN is directly related to the presence of threading dislocations (TDs) in the center of the QDs. The TEM analysis revealed that the TDs finish at the InN/GaN interface and they are pure edge dislocations. Therefore, spiral growth models cannot explain nucleation of these QDs. Although controlling edge TDs constitute a possible approach to determine the QD density, a better approach may be an increase in the material growth rate in order to enter the diffusion-limited growth mode, where growth is not sensitive to surface heterogeneities.
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81.07.Ta Quantum dots
81.05.Ea III-V semiconductors
81.15.Kk Vapor phase epitaxy; growth from vapor phase
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
61.72.Lk Linear defects: dislocations, disclinations

Charge transport effects in field emission from carbon nanotube-polymer composites

R. C. Smith, J. D. Carey, R. J. Murphy, W. J. Blau, J. N. Coleman, and S. R. P. Silva

Appl. Phys. Lett. 87, 263105 (2005); http://dx.doi.org/10.1063/1.2158023 (3 pages) | Cited 34 times

Online Publication Date: 21 December 2005

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Electron field emission measurements have been made on multiwall arc discharge carbon nanotubes embedded in a conjugated polymer host. Electron emission at low nanotube content is observed and attributed to an enhancement of the applied electric field at the polymer/nanotube/vacuum interface where the electron supply through the film is attributed to fluctuation induced tunneling in a disordered percolation network. A high network resistance is attributed to a polymer coating surrounding each nanotube, resulting in high resistance nanotube-polymer-nanotube tunnel junctions. The potential use of carbon nanotube-polymer composites for field emission based displays is also discussed.
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79.70.+q Field emission, ionization, evaporation, and desorption
73.40.Gk Tunneling

Scaling of micro- and nanodevices actuated by Casimir forces

J. Bárcenas, L. Reyes, and R. Esquivel-Sirvent

Appl. Phys. Lett. 87, 263106 (2005); http://dx.doi.org/10.1063/1.2152835 (3 pages) | Cited 18 times

Online Publication Date: 21 December 2005

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The effect of the Casimir force in micro- and nanoelectromechanical systems is examined taking fully into account the dielectric properties of the materials, as well as the finite thickness of movable elements in micro- and nanosystems. The resulting equations are exact, and from the bifurcation diagrams the critical separation before jump-to-contact is determined. It is shown how the critical separation changes, for example, with the dielectric properties of the materials and how these systems can be rescaled based on the information from the bifurcation diagrams.
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85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices
77.22.Ch Permittivity (dielectric function)

High-bias-induced structure and the corresponding electronic property changes in carbon nanotubes

S. Chen, J. Y. Huang, Z. Wang, K. Kempa, G. Chen, and Z. F. Ren

Appl. Phys. Lett. 87, 263107 (2005); http://dx.doi.org/10.1063/1.2155116 (3 pages) | Cited 15 times

Online Publication Date: 21 December 2005

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Atomic-scale microstructure changes of carbon nanotubes under high bias∕high current conditions were studied by in situ high-resolution transmission electron microscopy. We found that high bias voltage caused significant structure changes, such as crystallization and elimination of amorphous coating on the surface of nanotube walls, removal of nanotube walls, and formation of atomic-scale kinks. These structural changes are attributed to high temperatures induced by high bias resistive heating on the nanotubes. These structural changes cause dramatic electronic property changes of the nanotubes correspondingly. The results provide an efficient route to tailor the electronic properties of nanotubes by appropriate structural modifications.
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64.70.Nd Structural transitions in nanoscale materials
64.70.K- Solid-solid transitions
68.37.Lp Transmission electron microscopy (TEM)

Pseudoelasticity of martensitic titanium-nickel shape-memory films studied by in situ heating nanoindentation and transmission electron microscopy

K. Komvopoulos and X.-G. Ma

Appl. Phys. Lett. 87, 263108 (2005); http://dx.doi.org/10.1063/1.2149179 (3 pages) | Cited 12 times

Online Publication Date: 22 December 2005

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Pseudoelasticity of shape-memory alloys has been commonly associated with reversible austenite-martensite phase transformation characterized by diffusionless, shear-induced atomic rearrangement. In situ heating nanoindentation and transmission electron microscopy results of this study demonstrate that martensitic TiNi films may also exhibit pseudoelasticity over a specific temperature range due to the reversible movement of the twin boundaries. The nanoscale deformation behavior of martensitic TiNi films was examined over certain ranges of normal load and temperature. The underlying mechanisms of the reversible twin boundary movement and the energy dissipated by pseudoelastic and elastic-plastic deformation in the TiNi films are interpreted in the context of in situ heating nanoindentation responses. The obtained experimental evidence is in agreement with a unified description of pseudoelasticity in which the origin of the restoring force responsible for the pseudoelastic behavior of shape-memory alloys is considered to be the formation of metastable pseudotwins.
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81.40.Lm Deformation, plasticity, and creep
81.40.Jj Elasticity and anelasticity, stress-strain relations
81.30.Kf Martensitic transformations
62.20.F- Deformation and plasticity
64.70.K- Solid-solid transitions
62.20.D- Elasticity
81.40.Np Fatigue, corrosion fatigue, embrittlement, cracking, fracture, and failure
62.20.Qp Friction, tribology, and hardness
62.20.M- Structural failure of materials
61.72.Mm Grain and twin boundaries

Photoemission studies of passivation of germanium nanowires

Hemant Adhikari, Paul C. McIntyre, Shiyu Sun, Piero Pianetta, and Christopher E. D. Chidsey

Appl. Phys. Lett. 87, 263109 (2005); http://dx.doi.org/10.1063/1.2158027 (3 pages) | Cited 14 times

Online Publication Date: 23 December 2005

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The surface of single crystal germanium nanowires grown by cold-wall chemical vapor deposition was studied by synchrotron radiation photoemission spectroscopy and also by conventional x-ray photoelectron spectroscopy. The surfaces of the nanowires are not oxidized from which we infer that they are hydrogen passivated as-grown. Exposure to laboratory atmosphere leads to germanium oxide growth with oxidation states of Ge1+, Ge2+, Ge3+, while exposure to UV light leads to a predominance of the Ge4+ oxidation state. Most of the surface oxide could be removed readily by aqueous HF treatment which presumably leaves the nanowire surface hydrogen terminated. The HF-treated surface has more limited stability in air. Alternatively, chlorine termination could be achieved by aqueous HCl treatment of the oxide-coated nanowires. This chlorine termination was found to be more stable in air than the putative hydrogen termination achieved by aqueous HF treatment.
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79.60.Bm Clean metal, semiconductor, and insulator surfaces
81.65.Rv Passivation
81.65.Mq Oxidation

Electrical-field effect on carbon nanotubes in a twisted nematic liquid crystal cell

In-Su Baik, Sang Youn Jeon, Seung Hee Lee, Kyung Ah Park, Seok Ho Jeong, Kay Hyeok An, and Young Hee Lee

Appl. Phys. Lett. 87, 263110 (2005); http://dx.doi.org/10.1063/1.2158509 (3 pages) | Cited 72 times

Online Publication Date: 27 December 2005

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We have fabricated twisted nematic cells doped by carbon nanotubes (CNTs). The CNTs with a minute amount of doping did not perturb the liquid crystal orientation in the off and on state. The hysteresis studies of voltage-dependent transmittance and capacitance under ac and dc electric field showed that the residual dc, which is related to an image sticking problem in liquid crystal displays, was greatly reduced due to the ion trapping by CNTs.
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42.70.Df Liquid crystals
61.30.Gd Orientational order of liquid crystals; electric and magnetic field effects on order

Nanoimprint pattern transfer quality from specular x-ray reflectivity

Hae-Jeong Lee, Christopher L. Soles, Hyun Wook Ro, Ronald L. Jones, Eric K. Lin, Wen-li Wu, and Daniel R. Hines

Appl. Phys. Lett. 87, 263111 (2005); http://dx.doi.org/10.1063/1.2158512 (3 pages) | Cited 11 times

Online Publication Date: 27 December 2005

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Specular x-ray reflectivity is used for high precision measurements of the pattern height, residual layer thickness, and the line-to-space ratio for parallel line and space patterns fabricated with nanoimprint lithography. The line-to-space ratio is profiled vertically to reveal relative linewidth variations as a function of the feature height. These relative linewidth variations are quantified through an external measure of the average pitch to fully define the line shape profile or cross section. An excellent fidelity of the nanoimprint pattern transfer process is quantified by comparing the line shape profiles of the mold to the imprinted pattern.
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81.16.Nd Micro- and nanolithography
85.40.Hp Lithography, masks and pattern transfer

Growth of single conductive nanowires at prescribed loci

Chuanding Cheng and Donald T. Haynie

Appl. Phys. Lett. 87, 263112 (2005); http://dx.doi.org/10.1063/1.2158513 (3 pages) | Cited 7 times

Online Publication Date: 27 December 2005

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Conductive 75 nm diameter nanowires have been self-assembled from aqueous solution between 15 μm gap electrodes on a SiO2 substrate at predefined locations. Nanowire assembly was initiated by application an electric field, and it occurred along the direction of field lines where the field is strongest. Certain salts of palladium, but not of related metals, yielded nanowires under comparable conditions. The simple and straightforward approach to nanowire assembly outlined here could be used for nano/microscale device interconnection at precise positions at room temperature, important for device development, integration, and packaging.
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81.16.Dn Self-assembly
68.65.La Quantum wires (patterned in quantum wells)
61.46.-w Structure of nanoscale materials

Field-modified photoluminescence spectra in coupled quantum dots

Jia-Lin Zhu, Weidong Chu, Dong Xu, and Zhensheng Dai

Appl. Phys. Lett. 87, 263113 (2005); http://dx.doi.org/10.1063/1.2158523 (3 pages) | Cited 3 times

Online Publication Date: 27 December 2005

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Photoluminescence spectra of an exciton in coupled quantum dots under an electric field have been calculated and investigated, and it has been compared with a recent experiment. For coupled quantum dots, the four s-shell exciton states are dramatically affected by the electric field and the symmetry of the two dots. The electric field can induce anticrossings in the spectra, which are remarkably influenced by the differences between the two dots. The field-modified photoluminescence spectra can be used in the experiment to determine whether the two dots are identical and to obtain some information about electronic and structural parameters of coupled quantum dots.
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78.67.Hc Quantum dots
78.55.-m Photoluminescence, properties and materials
78.20.Jq Electro-optical effects
73.21.La Quantum dots
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
71.35.-y Excitons and related phenomena

Self-organized MnAs quantum dots formed during annealing of GaMnAs under arsenic capping

J. Sadowski, E. Janik, E. Lusakowska, J. Z. Domagala, S. Kret, P. Dlużewski, M. Adell, J. Kanski, L. Ilver, R. Brucas, and M. Hanson

Appl. Phys. Lett. 87, 263114 (2005); http://dx.doi.org/10.1063/1.2158524 (3 pages) | Cited 7 times

Online Publication Date: 27 December 2005

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Formation of MnAs quantum dots in a regular ring-like distribution has been found on molecular beam epitaxy grown (GaMn)As(100) surfaces after low-temperature annealing under As capping. The appearance of the dots depends on the thickness and Mn concentration in the (GaMn)As layer. With 5 at. % substitutional Mn the quantum dots showed up for layers thicker than 100 nm. For thinner layers the surfaces of the annealed samples are smooth and well ordered with 1×2 surface reconstruction, just as for as-grown (GaMn)As. The annealed surfaces are Mn rich, and are well suited for continued epitaxial growth.
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81.07.Ta Quantum dots
68.65.Hb Quantum dots (patterned in quantum wells)
61.72.Cc Kinetics of defect formation and annealing
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.35.B- Structure of clean surfaces (and surface reconstruction)
68.47.Fg Semiconductor surfaces

Radiative recombination of charged excitons and multiexcitons in CdSe quantum dots

M. C. Troparevsky and A. Franceschetti

Appl. Phys. Lett. 87, 263115 (2005); http://dx.doi.org/10.1063/1.2150583 (3 pages) | Cited 4 times

Online Publication Date: 27 December 2005

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We report semi-empirical pseudopotential calculations of emission spectra of charged excitons and biexcitons in CdSe nanocrystals. We find that the main emission peak of charged multiexcitons—originating from the recombination of an electron in an s-like state with a hole in an s-like state—is blueshifted with respect to the neutral monoexciton. In the case of the negatively charged biexciton, we observe additional emission peaks of lower intensity at higher energy, which we attribute to the recombination of an electron in a p state with a hole in a p state.
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71.35.-y Excitons and related phenomena
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
78.67.Hc Quantum dots

Blueshift of surface plasmon resonance spectra in anneal-treated silver nanoslit arrays

Yun Suk Jung, Zhijun Sun, Hong Koo Kim, and Jean Blachere

Appl. Phys. Lett. 87, 263116 (2005); http://dx.doi.org/10.1063/1.2159095 (3 pages) | Cited 10 times

Online Publication Date: 28 December 2005

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Silver nanoslit arrays were anneal treated in vacuum, and the effects on the surface morphology of silver and the surface plasmon resonance characteristics were investigated. Optical transmission through nanoslit arrays shows a distinctive change in the spectral profiles after annealing: A clear blueshift of the transmission peaks and dips (20 nm shift for an anneal temperature of 150 °C). Scanning electron microscopy reveals a morphological change of silver: Increased grain sizes, and smooth and round surface profiles after the anneal treatment. The observed blueshift of transmission spectra correlates well with the geometrical and dimensional changes of silver islands defined between slits, which are found to alter the surface plasmon resonance conditions involving various mechanisms in different regimes.
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81.05.Bx Metals, semimetals, and alloys
81.07.Bc Nanocrystalline materials
78.67.Bf Nanocrystals, nanoparticles, and nanoclusters
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
78.30.Er Solid metals and alloys
78.40.Kc Metals, semimetals, and alloys
81.40.Gh Other heat and thermomechanical treatments
68.35.B- Structure of clean surfaces (and surface reconstruction)

Electrical conductivity of a single C60 nanotube

Y. J. Xing, G. Y. Jing, J. Xu, D. P. Yu, H. B. Liu, and Y. L. Li

Appl. Phys. Lett. 87, 263117 (2005); http://dx.doi.org/10.1063/1.2159103 (3 pages) | Cited 22 times

Online Publication Date: 28 December 2005

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Electrical conductivity measurements were carried out on a single C60 nanotube fabricated via template growth technique. High resistance was observed from untreated C60 nanotubes. The I-V characteristics of the annealed C60 nanotubes indicate that a Schottky barrier exists between the electrode and the nanotube, which can be modified via annealing in vacuum. The activation energy of the annealed samples is close to the value of single C60 crystal. It was found that the C60 nanotube shows a large photoconductivity under light illumination and is an excellent candidate for optical switch. Our results suggest that the semiconducting C60 nanotube can be used as a rational building block in the construction of hierarchical architectures.
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73.63.Fg Nanotubes
72.40.+w Photoconduction and photovoltaic effects
73.30.+y Surface double layers, Schottky barriers, and work functions
81.40.Gh Other heat and thermomechanical treatments

Carbon nanotube effects on electroluminescence and photovoltaic response in conjugated polymers

Zhihua Xu, Yue Wu, Bin Hu, Ilia N. Ivanov, and David B. Geohegan

Appl. Phys. Lett. 87, 263118 (2005); http://dx.doi.org/10.1063/1.2152113 (3 pages) | Cited 26 times

Online Publication Date: 28 December 2005

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This letter reports the experimental results of enhanced electroluminescence (EL) and photovoltaic (PV) response upon doping single-wall carbon nanotubes (SWNTs) into conjugated polymer poly[2-methoxy-5-(2′-ethylhexyloxy)-1, 4-phenylenevinylene] (MEHPPV) based on single-layer light-emitting diodes. We found that the dispersed SWNTs result in two processes: charge transport and exciton dissociation at the tube-chain interface in the SWNT/polymer composites. The detailed EL and PV studies indicate that low SWNT doping concentrations mainly improve the bipolar charge injection, leading to enhanced both reverse and forward EL with reduced threshold voltage. As the SWNT doping concentration continues to increase, the interfacial exciton dissociation becomes dominated, giving rise to an increased PV response. This SWNT concentration-dependent charge transport and exciton dissociation present a pathway to individually address the dual EL and PV functionalities of SWNT-doped polymer composites by controlling the doping level of the SWNTs.
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78.60.Fi Electroluminescence
72.80.Le Polymers; organic compounds (including organic semiconductors)
61.72.up Other materials
61.72.S- Impurities in crystals
72.40.+w Photoconduction and photovoltaic effects
71.35.-y Excitons and related phenomena

Printing of organic and inorganic nanomaterials using electrospray ionization and Coulomb-force-directed assembly

Aaron M. Welle and Heiko O. Jacobs

Appl. Phys. Lett. 87, 263119 (2005); http://dx.doi.org/10.1063/1.2149985 (3 pages) | Cited 9 times

Online Publication Date: 29 December 2005

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This letter reports on an additive printing process to deposit organic and inorganic nanomaterials onto desired areas on a surface. The process combines electrospray ionization with Coulomb-force-directed assembly. Electrospray ionization is used to bring the desired nanomaterial into the gas phase while carrier gas, global, and localized electric fields are used to deposit the material onto desired locations on a substrate. Albumin fluorescein isothiocyanate bovine, avidin sulforhodamine, and gold colloids were sprayed from an aqueous solution and patterned with a resolution as high as 100 nm.
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81.07.-b Nanoscale materials and structures: fabrication and characterization
81.16.-c Methods of micro- and nanofabrication and processing
81.15.Rs Spray coating techniques
82.70.Dd Colloids

Metamorphic buffers and optical measurement of residual strain

M. Geddo, G. Guizzetti, M. Patrini, T. Ciabattoni, L. Seravalli, P. Frigeri, and S. Franchi

Appl. Phys. Lett. 87, 263120 (2005); http://dx.doi.org/10.1063/1.2159106 (3 pages) | Cited 15 times

Online Publication Date: 30 December 2005

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We show that the residual strain occurring in constant-composition metamorphic buffer layers of III–V heterostructures can be accurately predicted by the suitable design of the epitaxial structures and measured all optically by means of photoreflectance spectroscopy. This result allows one to single out the nonequilibrium models among those that have been proposed to predict strain relaxation. The resulting ∝t−1/2 dependence of the residual in-plane strain on buffer thickness t can be used to design metamorphic buffers not only for 1.3–1.55 μm emitting quantum dot structures, but also for sophisticated graded-composition metamorphic structures for different classes of devices.
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68.60.Bs Mechanical and acoustical properties
78.66.Fd III-V semiconductors
81.40.Jj Elasticity and anelasticity, stress-strain relations
62.40.+i Anelasticity, internal friction, stress relaxation, and mechanical resonances
46.80.+j Measurement methods and techniques in continuum mechanics of solids
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