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26 Dec 2005

Volume 87, Issue 26, Articles (26xxxx)

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Appl. Phys. Lett. 87, 263102 (2005); http://dx.doi.org/10.1063/1.2150278 (3 pages)

Z. Zhong, G. Katsaros, M. Stoffel, G. Costantini, K. Kern, O. G. Schmidt, N. Y. Jin-Phillipp, and G. Bauer
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Efficiency improvement in thin-film solar cell devices with oxygen-containing absorber layer

M. Emziane, K. Durose, D. P. Halliday, A. Bosio, and N. Romeo

Appl. Phys. Lett. 87, 261901 (2005); http://dx.doi.org/10.1063/1.2152108 (2 pages) | Cited 4 times

Online Publication Date: 19 December 2005

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The CdTe/CdS solar cell devices were grown using a dry process consisting of sputtering for the transparent conducting oxide and CdS window layers, and close-space sublimation for CdTe absorber layer. These devices were back contacted using Mo/Sb2Te3 sputtered layers following the CdCl2 activation process carried out in air. It was shown that when oxygen is intentionally introduced in the CdTe layer during its growth, this leads to a significant improvement in all the device parameters yielding an efficiency of 14% compared to 11.5% for devices fabricated in the same conditions but without intentional oxygen incorporation in CdTe. The data obtained were not altered following a light soaking. The devices were investigated by quantitative secondary ion mass spectrometry, which allowed insight into the distribution and amount of oxygen and chlorine within the entire device structure. Both impurities showed an increased concentration throughout the CdTe absorber layer.
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84.60.Jt Photoelectric conversion
81.15.Cd Deposition by sputtering
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

Giant negative thermal expansion in Ge-doped anti-perovskite manganese nitrides

K. Takenaka and H. Takagi

Appl. Phys. Lett. 87, 261902 (2005); http://dx.doi.org/10.1063/1.2147726 (3 pages) | Cited 102 times

Online Publication Date: 20 December 2005

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We report the discovery of a large negative thermal expansion (NTE) up to α = −25×10−6 K−1 (α: coefficient of linear thermal expansion) in Ge-doped anti-perovskite manganese nitrides Mn3AN (A = Cu,Zn,Ga). This gigantic NTE is several to ten times higher than that of commercially available NTE materials. The discontinuous lattice expansion seen in pure Mn3AN is broadened by Ge substitution over a wide temperature window, at widest ΔT ∼ 100 K, around room temperature. Such a large, isotropic and nonhysteretic NTE is desirable for practical applications.
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65.40.De Thermal expansion; thermomechanical effects
61.72.up Other materials

Role of structural defects on exchange bias in the epitaxial CoO/Co system

M. R. Ghadimi, B. Beschoten, and G. Güntherodt

Appl. Phys. Lett. 87, 261903 (2005); http://dx.doi.org/10.1063/1.2152111 (3 pages) | Cited 7 times

Online Publication Date: 20 December 2005

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We have studied the influence of nonmagnetic defects throughout the antiferromagnet Co1−yO on the exchange bias (EB) in epitaxially grown Co1−yO/Co bilayers. These defects are either substitutional or structural (twin boundaries and surface morphology), which both lead to an increase of the EB field. We find a dominance of twin boundaries over surface morphology (roughness) in enhancing EB that is consistent with the domain state model for exchange bias. In contrast, the crystal orientation of the Co1−yO layer does not show a significant effect on the EB in this system.
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75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)
75.30.Et Exchange and superexchange interactions
75.50.Ee Antiferromagnetics
61.72.Mm Grain and twin boundaries

Silicon waveguides produced by wafer bonding

M. Poulsen, F. Jensen, O. Bunk, R. Feidenhans’l, and D. W. Breiby

Appl. Phys. Lett. 87, 261904 (2005); http://dx.doi.org/10.1063/1.2158028 (3 pages) | Cited 3 times

Online Publication Date: 20 December 2005

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X-ray waveguides are successfully produced employing standard silicon technology of UV photolithography and wafer bonding. Contrary to theoretical expectations for similar systems even 100 μm broad guides of less than 80 nm height do not collapse and can be used as one dimensional waveguides to excite single guided modes at typical x-ray energies.
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42.82.Et Waveguides, couplers, and arrays
42.82.Cr Fabrication techniques; lithography, pattern transfer
85.40.Hp Lithography, masks and pattern transfer
41.50.+h X-ray beams and x-ray optics

One-dimensional Au/Si heterojunction-microstructure and phase evolution under electron beam irradiation

Quan Li and Yang Jiao

Appl. Phys. Lett. 87, 261905 (2005); http://dx.doi.org/10.1063/1.2158029 (3 pages) | Cited 4 times

Online Publication Date: 20 December 2005

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A special type of Au/Si nanowire heterojunctions, which are wrapped by SiO2 surface layer, is demonstrated in this work. Nanochannels exist in-between the Si-core∕SiO2-sheath close to the junction, which provides a flowing path for the Au at elevated temperatures. The Au–Si interactions during the reversible flowing process lead to an interesting phase evolution of the junction system, which eventually result in self-formation of the secondary nanostructures at the original Si/SiO2 interface. The observed microstructure∕phase evolution of the Au–Si nanowire junction under the focused electron beam irradiation suggests an approach to modify and pattern the Si nanowire surface, which may have potential applications in the nanoelectronic industry.
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81.07.-b Nanoscale materials and structures: fabrication and characterization
68.65.La Quantum wires (patterned in quantum wells)
61.80.Fe Electron and positron radiation effects
81.16.Dn Self-assembly
68.35.Ct Interface structure and roughness

Confinement of electromigration induced void propagation in Cu interconnect by a buried Ta diffusion barrier layer

M. Y. Yan, K. N. Tu, A. V. Vairagar, S. G. Mhaisalkar, and Ahila Krishnamoorthy

Appl. Phys. Lett. 87, 261906 (2005); http://dx.doi.org/10.1063/1.2158030 (3 pages) | Cited 5 times

Online Publication Date: 20 December 2005

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Direct observation, by means of in situ scanning electron microscopy, of void heterogeneous nucleation and migration controlled electromigration failure mechanism in Cu dual damascene interconnect structures has been recently reported [ A. V. Vairagar, S. G. Mhaisalkar, A. Krishnamoorthy, K. N. Tu, A. M. Gusak, M. A. Meyer, and E. Zschech, Appl. Phys. Lett. 85, 2502 (2004) ] In the present study, a dual damascene structure with an additional 25 nm Ta diffusion barrier embedded into the upper Cu layer was fabricated. This thin layer of diffusion barrier blocked voids from propagating into the via, thus eliminating the previously reported failure mechanism. With this structure, a lifetime improvement of at least 40 times was achieved. Analysis on failed samples suggested that failures in samples with the embedded Ta barrier layer occurred at the bottom of the via, which were caused by void migration along the bottom of the Cu lines.
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66.30.Qa Electromigration
68.35.Fx Diffusion; interface formation
61.72.Qq Microscopic defects (voids, inclusions, etc.)
85.40.Ls Metallization, contacts, interconnects; device isolation
68.37.Hk Scanning electron microscopy (SEM) (including EBIC)
68.55.A- Nucleation and growth

Verification of the O–Si–N complex in plasma-enhanced chemical vapor deposition silicon oxynitride films

Sudipto Naskar, Scott D. Wolter, Christopher A. Bower, Brian R. Stoner, and Jeffrey T. Glass

Appl. Phys. Lett. 87, 261907 (2005); http://dx.doi.org/10.1063/1.2158022 (3 pages) | Cited 7 times

Online Publication Date: 20 December 2005

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Silicon oxynitride films were deposited using a plasma-enhanced chemical vapor deposition process. The bond configurations of the constituent atoms in the deposited film were analyzed using x-ray photoelectron spectroscopy. Analysis of the Si 2p spectra showed the presence of nonstoichiometric silicon oxide and silicon oxynitride. Analysis of the binding energy shifts induced by Si–O and Si–N bond formation indicated an O–Si–N complex was present in the film matrix. Component balance analysis indicated that second-nearest-neighbor bond interactions were not the cause of these energy shifts and supported the presence of an O–Si–N complex.
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77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.55.-a Thin film structure and morphology
52.77.Dq Plasma-based ion implantation and deposition
77.55.-g Dielectric thin films
82.80.Pv Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)

Phase stability of the intermetallic L21 Heusler alloys of A2(Hf1−xZrx)Al (where A = Pd and Pt) for an Nb-based high-temperature materials design

Miyoung Kim, A. J. Freeman, Sungtae Kim, J. H. Perepezko, and G. B. Olson

Appl. Phys. Lett. 87, 261908 (2005); http://dx.doi.org/10.1063/1.2136223 (3 pages) | Cited 1 time

Online Publication Date: 21 December 2005

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First principles phase stability calculations are used to predict the lattice mismatches between Nb and the A2(Hf1−xZrx)Al L21 Heusler phases and the L21 phase formation energies, where A = Pd and∕or Pt, and x = 0, 0.25, 0.75 and 1. The calculated L21 phase mixing energy demonstrates that the Hf-Zr solution phases in the form of A2(Hf1−xZrx)Al (x ≠ 0 and 1) are energetically favored, although the Zr-rich alloys exhibit a smaller lattice mismatch than the Hf-rich alloys. The introduction of Pt reduces the lattice mismatch, and forms the energetically favorable (PtPd)XAl Heusler phase, where X = Hf and Zr. A number of critical diffusion couple experiments confirm the phase stability predictions and establish new microstructural design parameters.
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64.75.-g Phase equilibria
66.30.Ny Chemical interdiffusion; diffusion barriers
66.30.Fq Self-diffusion in metals, semimetals, and alloys

Generation of single color centers by focused nitrogen implantation

J. Meijer, B. Burchard, M. Domhan, C. Wittmann, T. Gaebel, I. Popa, F. Jelezko, and J. Wrachtrup

Appl. Phys. Lett. 87, 261909 (2005); http://dx.doi.org/10.1063/1.2103389 (3 pages) | Cited 72 times

Online Publication Date: 21 December 2005

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Single defect centers in diamond have been generated via nitrogen implantation. The defects have been investigated by single defect center fluorescence microscopy. Optical and electron paramagnetic resonance spectra unambiguously show that the produced defect is the nitrogen-vacancy color center. An analysis of the nitrogen flux together with a determination of the number of nitrogen-vacancy centers yields that on average one 2 MeV nitrogen atom need to be implanted per defect center.
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71.55.Ht Other nonmetals
61.72.J- Point defects and defect clusters
76.30.Mi Color centers and other defects
61.72.up Other materials
78.40.Ha Other nonmetallic inorganics
61.72.Yx Interaction between different crystal defects; gettering effect

Correlating elasticity and cleavage

P. Lazar, R. Podloucky, and W. Wolf

Appl. Phys. Lett. 87, 261910 (2005); http://dx.doi.org/10.1063/1.2149988 (3 pages) | Cited 15 times

Online Publication Date: 22 December 2005

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For brittle cleavage under Load Mode I, a model for single crystals is presented which derives the critical stress in terms of the cleavage energy and the uniaxial elastic modulus. The model parameters are determined by fitting to results of ab initio density functional calculations. The crucial concept for establishing an accurate correlation between cleavage and elastic properties is based on a generalization of the traditionally applied Orowan–Gilman model by introducing a localization length Lb as a new materials parameter. By that, a precise correlation between elastic and cleavage properties is established. We propose that, with an average value of Lb ≈ 2.4 Å, the critical stress can be directly estimated from the cleavage energy and the uniaxial stress within an error of ±10%.
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81.40.Jj Elasticity and anelasticity, stress-strain relations
81.40.Np Fatigue, corrosion fatigue, embrittlement, cracking, fracture, and failure
62.20.D- Elasticity
62.20.M- Structural failure of materials

Atomistic analysis of the mechanism of hydrogen diffusion in plasma-deposited amorphous silicon thin films

Mayur S. Valipa and Dimitrios Maroudas

Appl. Phys. Lett. 87, 261911 (2005); http://dx.doi.org/10.1063/1.2158033 (3 pages) | Cited 5 times

Online Publication Date: 22 December 2005

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We report the mechanism and activation barrier of H diffusion on the surface and in the bulk of plasma-deposited hydrogenated amorphous silicon (a-Si:H) films during postdeposition exposure of the films to H atoms from a H2 plasma. Our study is based on molecular-dynamics simulations of repeated impingement of H atoms on surfaces of smooth a-Si:H films over the temperature range 475–800 K. The H diffusion mechanism is identical both on the a-Si:H surface and in the bulk a-Si:H film. Specifically, the H atom diffuses rapidly through a floating-bond-mediated migration process; this floating bond accompanies the H atom as it hops from one Si atom to another. The Si atoms between which the H hops during its diffusion are typically either very weakly bonded or not bonded to each other. The calculated activation barrier for H diffusion is only 0.10 eV.
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81.05.Cy Elemental semiconductors
81.05.Gc Amorphous semiconductors
66.30.J- Diffusion of impurities
68.55.-a Thin film structure and morphology
68.55.A- Nucleation and growth
61.43.Dq Amorphous semiconductors, metals, and alloys

Acoustic channel drop tunneling in a phononic crystal

Y. Pennec, B. Djafari-Rouhani, J. O. Vasseur, H. Larabi, A. Khelif, A. Choujaa, S. Benchabane, and V. Laude

Appl. Phys. Lett. 87, 261912 (2005); http://dx.doi.org/10.1063/1.2158019 (3 pages) | Cited 24 times

Online Publication Date: 22 December 2005

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We study both theoretically and experimentally the possibility of resonant tunneling of acoustic waves between two parallel guides created in a phononic crystal composed of steel cylinders in water. In the absolute band gap of the phononic crystal, ranging from 250 to 325 kHz, a full transmission band exists for propagation inside a straight waveguide. We show that the transfer of a particular wavelength can occur between two parallel waveguides coupled together through an appropriate coupling structure. The latter is composed of isolated cavities interacting with stubs located at the sides of the waveguides.
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63.20.-e Phonons in crystal lattices
62.65.+k Acoustical properties of solids

Etching silicon wafer without hydrofluoric acid

Hong Liu and Zhong Lin Wang

Appl. Phys. Lett. 87, 261913 (2005); http://dx.doi.org/10.1063/1.2158021 (3 pages) | Cited 5 times

Online Publication Date: 22 December 2005

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A one-step hydrofluoric-acid-free hydrothermal-etching technique is demonstrated for the preparation of porous silicon with vertical holes. This method demonstrates a “green” chemical approach for etching a silicon wafer or the preparation of bismuth-silicon nanostructures without toxic acid or applying an external voltage. By controlling the heating temperature (<180 °C) and time, nanoscale vertically holed porous silicon has been created. A formation mechanism has been proposed on the basis of experimental observations.
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81.65.Cf Surface cleaning, etching, patterning
81.07.Bc Nanocrystalline materials

Structural and optical properties of InAs quantum dots regrown on atomic hydrogen-cleaned GaAs surface

Jong Su Kim, Mitsuo Kawabe, Nobuyki Koguchi, Dong-Yul Lee, Jin Soo Kim, and In-Ho Bae

Appl. Phys. Lett. 87, 261914 (2005); http://dx.doi.org/10.1063/1.2150582 (3 pages) | Cited 2 times

Online Publication Date: 23 December 2005

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We report the structural and optical properties of InAs quantum dots (QDs) directly regrown on air-exposed and subsequent atomic hydrogen-cleaned (AHC) GaAs (001) surface. The average size of InAs QDs on the AHC GaAs surface is 29 nm, which is larger than 22 nm for the conventionally grown InAs QDs on GaAs. The integrated photoluminescence intensity of the InAs QDs on the AHC GaAs measured at room temperature is larger than that of the reference sample by two orders, even though the cleaned GaAs surface directly faced the base of the InAs QDs. The decrease in the interface states between the wetting layer and AHC GaAs was confirmed by Franz–Keldysh oscillations of the photoreflectance spectra.
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81.07.Ta Quantum dots
81.05.Ea III-V semiconductors
68.65.Hb Quantum dots (patterned in quantum wells)
78.67.Hc Quantum dots
78.55.Cr III-V semiconductors

Optical characterization of GaN by N+ implantation into GaAs at elevated temperature

S. Dhara, P. Magudapathy, R. Kesavamoorthy, S. Kalavathi, K. G. M. Nair, G. M. Hsu, L. C. Chen, K. H. Chen, K. Santhakumar, and T. Soga

Appl. Phys. Lett. 87, 261915 (2005); http://dx.doi.org/10.1063/1.2099542 (3 pages) | Cited 6 times

Online Publication Date: 23 December 2005

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Both hexagonal wurtzite and cubic zinc blend GaN phases were synthesized in GaAs by 50 keV N+ implantation at 400 °C and subsequent annealing at 900 °C for 15 min in N2 ambient. The crystallographic structural and Raman scattering studies revealed that GaN phases were grown for fluence above 2×1017 cm−2. Temperature-dependent photoluminescence study showed a sharp direct band-to-band transition peak ∼ 3.32 eV at temperature ⩽ 200 K. The intermediate band-gap value, with respect to ∼ 3.4 eV for hexagonal and ∼ 3.27 eV for cubic phases of GaN, is indicative of the formation of mixed hexagonal and cubic phases.
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78.55.Cr III-V semiconductors
78.30.Fs III-V and II-VI semiconductors
61.72.uj III-V and II-VI semiconductors
61.66.Fn Inorganic compounds
61.72.Cc Kinetics of defect formation and annealing

Structural transitions in NaBH4 under pressure

Ravhi S. Kumar and Andrew L. Cornelius

Appl. Phys. Lett. 87, 261916 (2005); http://dx.doi.org/10.1063/1.2158505 (3 pages) | Cited 26 times

Online Publication Date: 27 December 2005

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The structure of the technologically important hydrogen storage compound NaBH4 has been investigated under pressures up to 30 GPa by in situ angle dispersive high pressure x-ray diffraction using synchrotron x rays and a diamond anvil cell. Our experimental results show pressure-induced structural transitions of α‐NaBH4 (cubic - Fm3m) to β‐NaBH4 (tetragonal - P421c) at 6.3 GPa and further to an orthorhombic phase (Pnma) at 8.9 GPa. The high pressure orthorhombic phase is found to be stable up to 30 GPa. The cubic phase is completely recovered on releasing the pressure back to ambient.
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64.70.K- Solid-solid transitions
62.50.-p High-pressure effects in solids and liquids

Low-threshold amplified spontaneous emission in thin films of poly(tetraarylindenofluorene)

Frédéric Laquai, Panagiotis E. Keivanidis, Stanislav Baluschev, Josemon Jacob, Klaus Müllen, and Gerhard Wegner

Appl. Phys. Lett. 87, 261917 (2005); http://dx.doi.org/10.1063/1.2158508 (3 pages) | Cited 9 times

Online Publication Date: 27 December 2005

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We report on amplification of blue light (469 nm) via amplified spontaneous emission in asymmetric planar waveguides of a fully arylated polyindenofluorene derivative. A very low threshold value of about 3 μJ/cm2 ( ∼ 375 W/cm2) for amplification of light has been demonstrated by pumping the waveguides at 3.0 eV (410 nm) with a stripe shape excitation beam. Moderate gain coefficients up to 21 cm−1 and loss coefficients around 6 cm−1 have been measured. All measurements were performed under ambient conditions. No sample degradation could be observed which testifies to the excellent stability of the material against photodegradation.
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78.45.+h Stimulated emission
42.70.Jk Polymers and organics
42.70.Hj Laser materials

Mechanical properties of a bulk Cu0.5NiAlCoCrFeSi glassy alloy in 288 °C high-purity water

Y. Y. Chen, U. T. Hong, J. W. Yeh, and H. C. Shih

Appl. Phys. Lett. 87, 261918 (2005); http://dx.doi.org/10.1063/1.2159090 (3 pages) | Cited 26 times

Online Publication Date: 28 December 2005

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The tensile properties and fatigue lives of a bulk Cu0.5NiAlCoCrFeSi glassy alloy were measured in 288 °C water and compared with those obtained in air at ∼ 25 °C. The bulk glassy alloy retained good tensile properties in 288 °C water, i.e., tensile fracture strength and tensile fracture elongation were, respectively, 2660 MPa and 2.01% in air and a little lower, 2000 MPa and 1.49%, in 288 °C water. The results of fatigue tests confirmed the significant decrease in fatigue life in high-temperature water. A decrease in strain rate from 0.5 to 0.001% s−1 decreased fatigue life by a factor of ∼ 5.
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81.40.Np Fatigue, corrosion fatigue, embrittlement, cracking, fracture, and failure
62.20.M- Structural failure of materials
81.70.Bt Mechanical testing, impact tests, static and dynamic loads
61.43.Fs Glasses
81.40.Lm Deformation, plasticity, and creep
62.20.F- Deformation and plasticity

Strain-induced ordering of small Ge islands in clusters at the surface of multilayered Si–Ge nanostructures

R. Marchetti, F. Montalenti, Leo Miglio, G. Capellini, M. De Seta, and F. Evangelisti

Appl. Phys. Lett. 87, 261919 (2005); http://dx.doi.org/10.1063/1.2151250 (3 pages) | Cited 20 times

Online Publication Date: 29 December 2005

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Classical molecular-dynamics simulations based on the Tersoff potential are used to compute at the atomic level the strain-induced potential well generated at the surface of the capping layer by a buried, three-dimensional Ge island on Si(001). A simple model is outlined in order to predict the configurational arrangement for the nucleation of small Ge islands in such a potential well. The theoretical predictions are compared with atomic force microscope images of multilayered SiGe nanostructures grown by chemical vapor deposition. The cluster configuration is shown to be strongly dependent on the capping layer thickness, and to closely mimic the behavior predicted by the model.
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68.65.Ac Multilayers
61.46.-w Structure of nanoscale materials

Kinetics of irradiation-induced Cu precipitation in nuclear reactor pressure vessel steels

Y. Nagai, T. Toyama, Y. Nishiyama, M. Suzuki, Z. Tang, and M. Hasegawa

Appl. Phys. Lett. 87, 261920 (2005); http://dx.doi.org/10.1063/1.2159091 (3 pages) | Cited 10 times

Online Publication Date: 30 December 2005

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The followup of the embrittlement of nuclear power reactor pressure vessels (RPVs) is of critical importance for the safety assessment in the nuclear industry. The prediction of their future degradation is based on the extrapolation of the past testing of surveillance materials irradiated in the power reactor and in material testing reactors with accelerated dose rates. Using positron annihilation spectroscopy, however, we here reveal a kinetics of irradiation-induced precipitation, i.e., very low dose rate can significantly enhance Cu nanoprecipitation. The mechanism results in the embrittlement in practical RPVs, occurring at a much earlier stage than that found from accelerated tests, suggesting that accelerated tests are not enough for prediction of the embrittlement from Cu nanoprecipitation.
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28.41.Qb Structural and shielding materials
28.41.Te Protection systems, safety, radiation monitoring, accidents, and dismantling
61.80.Fe Electron and positron radiation effects
81.40.Np Fatigue, corrosion fatigue, embrittlement, cracking, fracture, and failure
62.20.M- Structural failure of materials
78.70.Bj Positron annihilation

Broadband omnidirectional reflection from negative index materials

Mark Bloemer, Giuseppe D’Aguanno, Michael Scalora, and Nadia Mattiucci

Appl. Phys. Lett. 87, 261921 (2005); http://dx.doi.org/10.1063/1.2151251 (3 pages) | Cited 12 times

Online Publication Date: 30 December 2005

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We show, by using a dispersion relation with parameters taken from experimental data, that a single layer of a negative index material has omnidirectional reflection properties. In the range between the electric plasma frequency and the magnetic plasma frequency, the refractive index is close to zero and the negative index materials reflect radiation for all angles of incidence and polarization with reflectivities of ∼ 99%. In addition, with increasing angles of incidence, the reflecting band does not shift in frequency but actually widens. The operational bandwidth can be 100% or greater by increasing the separation between the electric and magnetic plasma frequencies.
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42.70.-a Optical materials
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
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