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11 Jul 2005

Volume 87, Issue 2, Articles (02xxxx)

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Appl. Phys. Lett. 87, 024103 (2005); http://dx.doi.org/10.1063/1.1984098 (3 pages)

A. Dupuis, J. Léopoldès, D. G. Bucknall, and J. M. Yeomans
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Fabrication of field-effect transistor device with higher fullerene, C88

Takayuki Nagano, Hiroyuki Sugiyama, Eiji Kuwahara, Rie Watanabe, Haruka Kusai, Yoko Kashino, and Yoshihiro Kubozono

Appl. Phys. Lett. 87, 023501 (2005); http://dx.doi.org/10.1063/1.1994957 (3 pages) | Cited 6 times

Online Publication Date: 6 July 2005

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A fullerene field-effect transistor (FET) device has been fabricated with thin films of C88, and n-channel normally on depletion-type FET properties have been found in this FET device. The C88 FET exhibited a high mobility, μ, of 2.5×10−3 cm2 V−1 s−1 at 300 K, in fullerene FETs. The carrier transport showed a thermally activated hopping transport. The n-channel normally on FET properties and the hopping transport reflect the small mobility gap and low carrier concentration in the channel region of C88 thin films.
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85.65.+h Molecular electronic devices
85.30.Tv Field effect devices
73.61.Wp Fullerenes and related materials
72.20.Ee Mobility edges; hopping transport

Threshold voltage instability of amorphous silicon thin-film transistors under constant current stress

Shah M. Jahinuzzaman, Afrin Sultana, Kapil Sakariya, Peyman Servati, and Arokia Nathan

Appl. Phys. Lett. 87, 023502 (2005); http://dx.doi.org/10.1063/1.1993766 (3 pages) | Cited 27 times

Online Publication Date: 7 July 2005

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We investigate the time-dependent shift in the threshold voltage of amorphous silicon thin-film transistor stressed with constant drain current. We observe a nonsaturating power-law time dependence, which is in contrast to the conventional stretched exponential that saturates at prolonged stress time. The result is consistent with the carrier-induced defect creation model and corroborates the nonlinear dependence of the rate of defect creation on the band-tail carrier density.
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85.30.Tv Field effect devices

Improvement of current gain of C-doped GaAsSb-base heterojunction bipolar transistors by using an InAlP emitter

Yasuhiro Oda, Haruki Yokoyama, Kenji Kurishima, Takashi Kobayashi, Noriyuki Watanabe, and Masahiro Uchida

Appl. Phys. Lett. 87, 023503 (2005); http://dx.doi.org/10.1063/1.1995948 (2 pages) | Cited 10 times

Online Publication Date: 7 July 2005

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Large conduction band edge discontinuity (ΔEc) at the emitter/base interface in InP/GaAs0.51Sb0.49/InP heterojunction bipolar transistor (HBT) is one of the possible reasons that the recombination process in the emitter/base depletion region dominates the characteristics of this HBT. We fabricate an InAlP emitter/GaAs0.51Sb0.49base/InP collector HBT for reducing the ΔEc at the emitter/base interface. It is demonstrated that a HBT with an InAlP emitter shows a relatively lower recombination current than one with an InP emitter, resulting in the higher current gain. It is also found that the decrease of recombination current depends on the Al content of InAlP emitter. Additionally, the ideality factor of the emitter-base current is smallest at the Al content of 0.15 in the InAlP emitter. These results indicate that using an InAlP emitter is effective for improving the current gain of GaAsSb-base HBTs.
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85.30.Pq Bipolar transistors

Flexible semitransparent pentacene thin-film transistors with polymer dielectric layers and NiOx electrodes

Jiyoul Lee, D. K. Hwang, Jeong-M. Choi, Kimoon Lee, Jae Hoon Kim, Seongil Im, Ji Hoon Park, and Eugene Kim

Appl. Phys. Lett. 87, 023504 (2005); http://dx.doi.org/10.1063/1.1996839 (3 pages) | Cited 29 times

Online Publication Date: 8 July 2005

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We have fabricated the flexible semitransparent pentacene-based thin-film transistors (TFTs) with poly-4-vinylphenol (PVP) dielectric layers which were deposited by spin coating on a thermostable plastic substrate with a conductive film. For the source∕drain (S∕D) electrodes of our flexible pentacene TFTs both Au and semitransparent NiOx have been tested. It was found that NiOx was better matched to the pentacene channel for the S∕D contacts than Au. Our flexible pentacene TFTs with semitransparent NiOx contacts exhibited mobility of ∼ 0.24 cm2/V s higher than that achieved with Au contacts ( ∼ 0.14 cm2/V s) and also demonstrated a higher initial drain current.
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85.30.Tv Field effect devices
77.84.Jd Polymers; organic compounds

Single-layer organic memory devices based on N,N′-di(naphthalene-l-yl)-N,N′-diphenyl-benzidine

Jiangshan Chen and Dongge Ma

Appl. Phys. Lett. 87, 023505 (2005); http://dx.doi.org/10.1063/1.1992653 (3 pages) | Cited 44 times

Online Publication Date: 8 July 2005

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We report a single-layer organic electrically bistable device made of N,N′-di(naphthalene-l-yl)-N,N′-diphenyl-benzidine sandwiched between two electrodes. The measured current-voltage characteristics show two states of different conductivities at the same applied voltage—high-conductance state (ON state) and low-conductance state (OFF state)—and the two states are reproducible by applying a negative writing voltage. It was found that the ratio of the ON∕OFF current depends strongly on the writing voltage, and the bistable characteristics were yet retained for up to hours and days before reading the device after applying a writing voltage. Furthermore, more than 106 write-read-erase-reread cycles have been performed in ambient conditions without degradation. These properties show the devices promising for high-density, low-cost memory application.
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84.30.Sk Pulse and digital circuits

Spin-cast thin semiconducting polymer interlayer for improving device efficiency of polymer light-emitting diodes

Ji-Seon Kim, Richard H. Friend, Ilaria Grizzi, and Jeremy H. Burroughes

Appl. Phys. Lett. 87, 023506 (2005); http://dx.doi.org/10.1063/1.1992658 (3 pages) | Cited 128 times

Online Publication Date: 8 July 2005

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We report that adding a thin ( ∼ 10 nm) semiconducting polymer interlayer between apoly(styrenesulphonate)-doped poly(3,4-ethylenedioxythiophene) (PEDT:PSS) hole transporter and an emissive semiconductor significantly improves the device efficiency of polymer light-emitting diodes (LEDs). With the interlayer, the external quantum efficiency (EQE) increases from 0.7%(0.4 cd/A at 3.7 V) to 1.9% (1.0 cd/A at 3.3 V) at 100 cd/m2 for red LEDs and from 1.9%(6.2 cd/A at 3.4 V) to 3.0% (10.1 cd/A at 3.0 V) at 1000 cd/m2 for green LEDs. An EQE of 4.0% is also observed in blue LEDs (35% increase). The interlayer is spin-coated directly on top of the PEDT:PSS layer from a poly(2,7-(9,9-di-n-octylfluorene)-alt-(1,4-phenylene-((4-sec-butylphenyl)imino)-1,4-phenylene)) (TFB) solution. This interlayer prevents significant quenching of radiative excitons at the PEDT:PSS interface by acting as an efficient exciton blocking layer.
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85.60.Jb Light-emitting devices
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Titania bicontinuous network structures for solar cell applications

H. Wang, C. C. Oey, A. B. Djurišić, M. H. Xie, Y. H. Leung, K. K. Y. Man, W. K. Chan, A. Pandey, J.-M. Nunzi, and P. C. Chui

Appl. Phys. Lett. 87, 023507 (2005); http://dx.doi.org/10.1063/1.1992659 (3 pages) | Cited 42 times

Online Publication Date: 8 July 2005

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We report fabrication of a TiO2 interconnected network structure for photovoltaic applications, which was obtained using polystyrene-block-polyethylene oxide diblock copolymer as the templating agent. The synthetic method is simple and highly reproducible. The pore size of the structure is controlled by the amount of Ti precursor provided. The heterojunction solar cells consisting of a TiO2 porous network structure and poly (2-methoxy-5-(2′-ethyl-hexyloxy)-p-phenylene vinylene) (MEH-PPV) showed improved performance with a short circuit current of 3.25 mA/cm2 under AM 1.5 solar illumination. The achieved maximum external quantum efficiency for optimum MEH-PPV thickness was 34%.
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84.60.Jt Photoelectric conversion
68.55.-a Thin film structure and morphology

Electrical detection of immobilized proteins with ungated AlGaN/GaN high-electron-mobility Transistors

B. S. Kang, F. Ren, L. Wang, C. Lofton, Weihong W. Tan, S. J. Pearton, A. Dabiran, A. Osinsky, and P. P. Chow

Appl. Phys. Lett. 87, 023508 (2005); http://dx.doi.org/10.1063/1.1994951 (3 pages) | Cited 44 times

Online Publication Date: 8 July 2005

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Ungated AlGaN/GaN high-electron-mobility transistor (HEMT) structures were functionalized in the gate region with aminopropyl silane. This serves as a binding layer to the AlGaN surface for attachment of fluorescent biological probes. Fluorescence microscopy shows that the chemical treatment creates sites for specific absorption of probes. Biotin was then added to the functionalized surface to bind with high affinity to streptavidin proteins. The HEMT drain-source current showed a clear decrease of 4 μA as this protein was introduced to the surface, showing the promise of this all-electronic detection approach for biological sensing.
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85.30.Tv Field effect devices

Control of threshold voltage of organic field-effect transistors with double-gate structures

Shingo Iba, Tsuyoshi Sekitani, Yusaku Kato, Takao Someya, Hiroshi Kawaguchi, Makoto Takamiya, Takayasu Sakurai, and Shinichi Takagi

Appl. Phys. Lett. 87, 023509 (2005); http://dx.doi.org/10.1063/1.1995958 (3 pages) | Cited 39 times

Online Publication Date: 8 July 2005

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We fabricated pentacene field-effect transistors with planar-type double-gate structures, where the top- and bottom-gate electrodes can independently apply voltage biases to channel layers. The threshold voltage of organic transistors is changed systematically in a wide range from −16 to −43 V when the voltage bias of the top-gate electrode is changed from 0 to +60 V. The mobility in the linear regime is almost constant (0.2 cm2/V s) at various voltage biases of the top-gate electrode and the on/off ratio is 106.
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85.30.Tv Field effect devices
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