APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

11 Jul 2005

Volume 87, Issue 2, Articles (02xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 87, 024103 (2005); http://dx.doi.org/10.1063/1.1984098 (3 pages)

A. Dupuis, J. Léopoldès, D. G. Bucknall, and J. M. Yeomans
Enlarge Image | Read More
Return to All Sections
back to top
RSS Feeds

Effects of post-deposition annealing in O2 on the electrical characteristics of LaAlO3 films on Si

L. Miotti, K. P. Bastos, C. Driemeier, V. Edon, M. C. Hugon, B. Agius, and I. J. R. Baumvol

Appl. Phys. Lett. 87, 022901 (2005); http://dx.doi.org/10.1063/1.1989447 (3 pages) | Cited 14 times

Online Publication Date: 5 July 2005

Full Text: Read Online (HTML) | Download PDF

Show Abstract
LaAlO3 films were deposited on p-type Si(100) by sputtering from a LaAlO3 target. C×V characteristics were determined in nonannealed and O2-annealed capacitors having LaAlO3 films as dielectric and RuO2 as top electrode. Thermal annealing in O2 atmosphere reduced flat band voltage to acceptable values for advanced Si-based devices. math–math isotopic substitution was characterized by Rutherford backscattering spectrometry and nuclear resonant reaction profiling. Chemical analysis of the films was accomplished by x-ray photoelectron spectroscopy. The electrical improvements observed after thermal annealing in O2 were attributed to the incorporation of oxygen from the gas phase, possibly healing oxygen vacancies in the films and providing mobile oxygen to the interface.
Show PACS
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
84.32.Tt Capacitors
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
68.55.A- Nucleation and growth
81.15.Cd Deposition by sputtering
81.40.Gh Other heat and thermomechanical treatments
82.80.Yc Rutherford backscattering (RBS), and other methods of chemical analysis
82.30.Hk Chemical exchanges (substitution, atom transfer, abstraction, disproportionation, and group exchange)
61.72.J- Point defects and defect clusters

Titanium-added praseodymium silicate high-k layers on Si(001)

T. Schroeder, G. Lupina, J. Dabrowski, A. Mane, Ch. Wenger, G. Lippert, and H.-J. Müssig

Appl. Phys. Lett. 87, 022902 (2005); http://dx.doi.org/10.1063/1.1978978 (3 pages) | Cited 33 times

Online Publication Date: 6 July 2005

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Titanium-added praseodymium silicate layers on Si(001) are promising high-k insulators for silicon-based nanoelectronic devices. Synchrotron radiation x-ray photoelectron spectroscopy was applied to study the effect of titanium additives on the praseodymium silicate/Si system. Nondestructive depth profiling by variation of the photon energy shows that thermal annealing activates the diffusion of deposited titanium into the praseodymium silicate. A homogeneous praseodymium titanium silicate layer is formed that shows high-quality electrical properties.
Show PACS
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.55.-g Dielectric thin films
79.60.Bm Clean metal, semiconductor, and insulator surfaces
73.61.Ng Insulators
66.30.J- Diffusion of impurities

Electron spin resonance investigation of oxygen-vacancy-related defects in BaTiO3 thin films

V. V. Laguta, A. M. Slipenyuk, I. P. Bykov, M. D. Glinchuk, M. Maglione, D. Michau, J. Rosa, and L. Jastrabik

Appl. Phys. Lett. 87, 022903 (2005); http://dx.doi.org/10.1063/1.1954900 (3 pages) | Cited 11 times

Online Publication Date: 7 July 2005

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The Ti3+ center, based on a regular Ti site perturbed by an oxygen vacancy (VO), is identified by electron spin resonance (ESR) in textured BaTiO3 films. The center shows tetragonal symmetry along cubic ⟨100⟩ axes with g-factors: g‖ = 1.997, g⊥ = 1.904. The spectrum of this defect disappeared after the film annealing at 700 °C in an O2 atmosphere. We describe the observed spectrum as Ti3+–VO couple defects or F+ center, which have never been observed in bulk BaTiO3. ESR is thus a unique tool to identify oxygen-vacancy-related defects, which have a large effect on the performance of ferroelectric films.
Show PACS
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
77.55.-g Dielectric thin films
76.30.Fc Iron group (3d) ions and impurities (Ti-Cu)
77.80.-e Ferroelectricity and antiferroelectricity
81.40.Gh Other heat and thermomechanical treatments
61.72.Yx Interaction between different crystal defects; gettering effect
61.72.J- Point defects and defect clusters

A giant pyroelectric effect of a rigid rod-like polymer, poly[(s)-(-)-2-propionic acid methyl isocyanate]

Atsushi Sugita, Yuhji Yamashira, and Shigeru Tasaka

Appl. Phys. Lett. 87, 022904 (2005); http://dx.doi.org/10.1063/1.1978981 (3 pages) | Cited 3 times

Online Publication Date: 7 July 2005

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Electric activity of a rigid rod-like polymer, poly[(s)-(-)-2-propionic acid methyl isocyanate] (Pc*IC), in a solid state is reported. A measurement of a displacement-field hysteresis loop reveals that Pc*IC chain systems possessed polarization for which the direction can be inversed by an external field. Remanent polarization and a coercive field were determined to be 16.4 mC/m2 and 15.7 MV/m, respectively, at 20 °C. The polymer also exhibited the excellent pyroelectricity. A pyroelectric coefficient of about 300 μmC/m2 K at 95 °C was one magnitude larger than those of other pyroelectric polymers and was almost comparable with those of some inorganic pyroelectric materials.
Show PACS
77.84.Jd Polymers; organic compounds
77.70.+a Pyroelectric and electrocaloric effects
77.22.Ej Polarization and depolarization
72.80.Le Polymers; organic compounds (including organic semiconductors)

Rearrangement of ferroelectric domain structure induced by chemical etching

V. Ya. Shur, A. I. Lobov, A. G. Shur, S. Kurimura, Y. Nomura, K. Terabe, X. Y. Liu, and K. Kitamura

Appl. Phys. Lett. 87, 022905 (2005); http://dx.doi.org/10.1063/1.1993769 (3 pages) | Cited 15 times

Online Publication Date: 7 July 2005

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The rearrangement of the domain structure induced by chemical etching has been observed in periodically poled MgO-doped stoichiometric lithium tantalate single crystals. Topographic and piezoresponse scanning probe microscopy have been used for measuring the etching relief height and domain wall position after etching. The considerable shift of the domain wall during etching by pure hydrofluoric acid has been revealed by analysis of the experimental data. We have found that the wall motion proceeded after the termination of the etching procedure. We have shown that the whole consequence of the domain wall positions during etching is recorded in the etching relief height and can be extracted with high spatial and temporal resolution.
Show PACS
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.80.Dj Domain structure; hysteresis
81.65.Cf Surface cleaning, etching, patterning
68.35.B- Structure of clean surfaces (and surface reconstruction)

Characterization of highly (110)- and (111)-oriented Pb(Zr,Ti)O3 films on BaPbO3 electrode using Ru conducting barrier

Chun-Sheng Liang and Jenn-Ming Wu

Appl. Phys. Lett. 87, 022906 (2005); http://dx.doi.org/10.1063/1.1996850 (3 pages) | Cited 11 times

Online Publication Date: 8 July 2005

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Highly non-(001)-oriented Pb(Zr,Ti)O3 (PZT) films have been fabricated by rf-magnetron sputtering. The preferential (110)-oriented BaPbO3 (BPO) deposited on Ru buffer layer induces the growth of (110)-oriented PZT film. With the aid of self-organized growth of PZT, the orientation of the film deposited on random-oriented BPO/Pt(111)/Ru(002) is (111)-preferred. The insertion of Pt layer between BPO and Ru changes the orientation of PZT from (110) to (111) and prevents the oxygen diffusion. These non-(001)-oriented PZT films possess more superior ferroelectric, fatigue, and retention properties than those of (001)-oriented PZT films.
Show PACS
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.55.-g Dielectric thin films
68.55.-a Thin film structure and morphology
68.55.A- Nucleation and growth
81.40.Np Fatigue, corrosion fatigue, embrittlement, cracking, fracture, and failure
62.20.M- Structural failure of materials
77.80.-e Ferroelectricity and antiferroelectricity
81.15.Cd Deposition by sputtering

Electrode and grain-boundary effects on the conductivity of CaCu3Ti4O12

Lei Zhang

Appl. Phys. Lett. 87, 022907 (2005); http://dx.doi.org/10.1063/1.1993748 (3 pages) | Cited 40 times

Online Publication Date: 8 July 2005

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The ac conductivity of CaCu3Ti4O12 (CCTO) ceramics was studied in the temperature range 173<T<443 K. The dc conductivities containing the components of electrodes (σe) and grain boundaries (σgb) were measured, from which a thermal activation energies of ∼ 0.54 eV was inferred. Different behaviors of dielectric relaxations are responsible for the two contributing components.
Show PACS
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
72.80.Sk Insulators
81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
77.22.Gm Dielectric loss and relaxation
61.72.Mm Grain and twin boundaries
Return to All Sections
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close