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11 Jul 2005

Volume 87, Issue 2, Articles (02xxxx)

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Appl. Phys. Lett. 87, 024103 (2005); http://dx.doi.org/10.1063/1.1984098 (3 pages)

A. Dupuis, J. Léopoldès, D. G. Bucknall, and J. M. Yeomans
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Electron transport in ZnO thin films

T. Makino, Y. Segawa, A. Tsukazaki, A. Ohtomo, and M. Kawasaki

Appl. Phys. Lett. 87, 022101 (2005); http://dx.doi.org/10.1063/1.1991994 (3 pages) | Cited 35 times

Online Publication Date: 5 July 2005

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Epitaxial n-type ZnO films grown by a laser molecular-beam epitaxy method were investigated by the temperature-dependent Hall-effect technique. The 300 K carrier concentration and mobility were about ns ∼ 1016 cm−3 and 440 cm2/V s, respectively. Transport characteristics are calculated by solving the Boltzmann transport equation using a variational method. Mobility limit of 430 cm2/V s was calculated at 300 K. The temperature dependence of the mobility for an undoped film is calculated and agrees favorably well with experimental data if physical parameters are chosen so as to approach those. In the experimental “mobility versus concentration” curve, unusual phenomenon was observed, i.e., mobilities at ns ∼ 5×1018 cm−3 are significantly smaller than those at higher densities above ∼ 1020 cm−3. It is qualitatively explained in terms of electron-plasmon interaction.
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73.61.Ga II-VI semiconductors
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)
81.05.Dz II-VI semiconductors
73.50.Dn Low-field transport and mobility; piezoresistance
73.50.Mx High-frequency effects; plasma effects
73.43.Lp Collective excitations

Plasma wave resonant detection of femtosecond pulsed terahertz radiation by a nanometer field-effect transistor

F. Teppe, D. Veksler, V. Yu. Kachorovski, A. P. Dmitriev, X. Xie, X.-C. Zhang, S. Rumyantsev, W. Knap, and M. S. Shur

Appl. Phys. Lett. 87, 022102 (2005); http://dx.doi.org/10.1063/1.1952578 (3 pages) | Cited 28 times

Online Publication Date: 7 July 2005

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We report on the room-temperature, resonant detection of femtosecond pulsed terahertz radiation obtained by optical rectification in a ZnTe crystal. The detection was realized using a 250 nm gate length GaAs/AlGaAs heterostructure field-effect transistor. We show that physical mechanism of the detection is related to the plasma waves excited in the transistor channel. The detection is strongly enhanced by increasing the drain current and driving the transistor into the plasma wave instability region. Our results clearly show that plasma wave nanometer transistors can be efficient and fast detectors for terahertz spectroscopic imaging based on the femtosecond pulsed THz sources.
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84.40.-x Radiowave and microwave (including millimeter wave) technology
85.30.Tv Field effect devices

Room-temperature semiconductor heterostructure refrigeration

K. A. Chao, Magnus Larsson, and A. G. Mal’shukov

Appl. Phys. Lett. 87, 022103 (2005); http://dx.doi.org/10.1063/1.1992651 (3 pages) | Cited 6 times

Online Publication Date: 8 July 2005

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With the proper design of semiconductor tunneling barrier structures, we can inject low-energy electrons via resonant tunneling, and take out high-energy electrons via a thermionic process. This is the operation principle of our semiconductor heterostructure refrigerator (SHR) without the need of applying a temperature gradient across the device. Even for the bad thermoelectric material AlGaAs, our calculation shows that at room temperature, the SHR can easily lower the temperature by 5–7 K. Such devices can be fabricated with the present semiconductor technology. Besides its use as a kitchen refrigerator, the SHR can efficiently cool microelectronic devices.
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07.20.Mc Cryogenics; refrigerators, low-temperature detectors, and other low-temperature equipment

Controlled band offset in (Gd2O3)1−x(SiO2)x(0 ⩽ x ⩽ 1)/n–GaAs (001) structure

Jun-Kyu Yang and Hyung-Ho Park

Appl. Phys. Lett. 87, 022104 (2005); http://dx.doi.org/10.1063/1.1992652 (3 pages) | Cited 9 times

Online Publication Date: 8 July 2005

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This letter investigates the chemistry and energy band structure of (Gd2O3)1−x(SiO2)x(0 ⩽ x ⩽ 1) films grown on n-GaAs (001). Dielectric band gap and interfacial band alignment of Gd2O3 films were modified by compounding with SiO2. Binding energy shift of core level was observed from different electronegativity of second nearest-neighbor element. Controlled parameters of energy band structure were systematically characterized by valence band, absorption, and energy loss spectra. Assuming no Fermi level pinning in the midgap of n-GaAs, band offset values represent almost linear dependency on the concentration of SiO2. The correlation of band offset with the electrical properties, as probed by capacitance and leakage current measurements, was also discussed.
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73.20.At Surface states, band structure, electron density of states
77.55.-g Dielectric thin films
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.

Thermally stable visible-blind diamond photodiode using tungsten carbide Schottky contact

Meiyong Liao, Yasuo Koide, and Jose Alvarez

Appl. Phys. Lett. 87, 022105 (2005); http://dx.doi.org/10.1063/1.1992660 (3 pages) | Cited 32 times

Online Publication Date: 8 July 2005

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We have developed a thermally stable, deep-ultraviolet (DUV) photodiode using tungsten carbide (WC) Schottky and Ti/WC ohmic contacts for a boron-doped homoepitaxial p-diamond epilayer. Effects of thermal annealing in an argon ambient on the electrical and photoresponse properties were investigated. Annealing at temperatures up to 550 °C improves the rectifying current-voltage characteristics, resulting in a dramatic enhancement of DUV responsivity at 220 nm by a factor of 4×103. A blind ratio as large as 105 between DUV and visible light has been achieved at a reverse bias as small as 1 V. Development of the thermally stable WC-based Schottky and ohmic contacts provides a route for stable operation of a diamond photodetector at high temperatures.
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85.60.Dw Photodiodes; phototransistors; photoresistors
85.30.Kk Junction diodes
85.60.Gz Photodetectors (including infrared and CCD detectors)
61.72.Cc Kinetics of defect formation and annealing
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