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11 Jul 2005

Volume 87, Issue 2, Articles (02xxxx)

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Appl. Phys. Lett. 87, 024103 (2005); http://dx.doi.org/10.1063/1.1984098 (3 pages)

A. Dupuis, J. Léopoldès, D. G. Bucknall, and J. M. Yeomans
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Replicative generation of metal microstructures by template-directed electrometallization

I. Thom, G. Hähner, and M. Buck

Appl. Phys. Lett. 87, 024101 (2005); http://dx.doi.org/10.1063/1.1991992 (3 pages) | Cited 13 times

Online Publication Date: 5 July 2005

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Copper structures were produced by electrochemical deposition onto patterned self-assembled monolayers (SAMS) of thiols adsorbed on polycrystalline gold substrates and subsequent transfer to an insulating substrate. Selective metal deposition was achieved by use of thiols which differ in their electrochemical blocking properties, namely hexadecane thiol [CH3(CH2)15SH] and ω-(4′-methyl-biphenyl-4-yl)-methanethiol (CH3–C6H4–C6H4–CH2–SH). Besides control of the blocking properties, the SAM served to minimize adhesion between the metal deposit and the substrate, thus, allowing the transfer of the metal pattern. Since the process is replicative, it represents a very simple and fast route to generating metal patterns.
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81.05.Bx Metals, semimetals, and alloys
81.15.Pq Electrodeposition, electroplating
82.45.Qr Electrodeposition and electrodissolution

Highly sensitive detection technique of buried defects in extreme ultraviolet masks using at-wavelength scanning dark-field microscopy

V. Farys, P. Schiavone, F. Polack, M. Idir, M. Bertolo, A. Bianco, S. La Rosa, G. Cautero, C. Vannuffel, E. Quesnel, and V. Muffato

Appl. Phys. Lett. 87, 024102 (2005); http://dx.doi.org/10.1063/1.1984097 (3 pages) | Cited 1 time

Online Publication Date: 5 July 2005

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A technique to probe defects buried inside extreme ultraviolet (EUV) masks has been implemented using a dark-field microscopy detection setup. Specific samples have been fabricated to evaluate the sensitivity of this technique. They consist of silicon oxide gratings of a few nanometers height, coated with 40 layer pairs of molybdenum–silicon. We observed images with a good contrast on samples with defects as low as 3 nm. However, the imaging mechanism of scanning dark-field microscopy is not linear and can produce image distortions. Conditions of correct imaging have been analyzed, and simulations have been performed that show good agreement with the experimental data. This work opens the way for a better understanding of the capability of at-wavelength inspection technique for EUV mask.
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85.40.Hp Lithography, masks and pattern transfer
07.79.-v Scanning probe microscopes and components

Control of drop positioning using chemical patterning

A. Dupuis, J. Léopoldès, D. G. Bucknall, and J. M. Yeomans

Appl. Phys. Lett. 87, 024103 (2005); http://dx.doi.org/10.1063/1.1984098 (3 pages) | Cited 7 times

Online Publication Date: 6 July 2005

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We explore how chemical patterning on surfaces can be used to control drop wetting. Both numerical and experimental results are presented to show how the dynamic pathway and equilibrium shape of the drops are altered by a hydrophobic grid. The grid proves a successful way of confining drops and we show that it can be used to alleviate mottle, a degradation in image quality which results from uneven drop coalescence due to randomness in the positions of the drops within the jetted array.
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47.55.D- Drops and bubbles
47.55.Kf Particle-laden flows
47.54.-r Pattern selection; pattern formation
68.08.Bc Wetting

Fabrication of efficient microaxicon by direct electron-beam lithography for long nondiffracting distance of Bessel beams for optical manipulation

W. C. Cheong, B. P. S. Ahluwalia, X.-C. Yuan, L.-S. Zhang, H. Wang, H. B. Niu, and X. Peng

Appl. Phys. Lett. 87, 024104 (2005); http://dx.doi.org/10.1063/1.1953876 (3 pages) | Cited 10 times

Online Publication Date: 6 July 2005

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We demonstrate a fabrication technique in the realization of microaxicon by single-step processing via electron-beam lithography. Microaxicon is used for the generation of propagation-invariant Bessel beams which find tremendous applications in optical trapping. The proposed technique is a simple, reliable, and reproducible method for the production of high-quality Bessel beams with long propagation-invariant distances, in our configuration, in excess of 20 cm. Such Bessel beams with long nondiffracting distances are essential for optical tweezers systems in many cases.
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42.82.Cr Fabrication techniques; lithography, pattern transfer
42.79.Bh Lenses, prisms and mirrors

Highest conductivity oxide SrMoO3 grown by a floating-zone method under ultralow oxygen partial pressure

Ichiro Nagai, Naoki Shirakawa, Shin-ichi Ikeda, Ryusuke Iwasaki, Hiroshi Nishimura, and Masashi Kosaka

Appl. Phys. Lett. 87, 024105 (2005); http://dx.doi.org/10.1063/1.1992671 (3 pages) | Cited 14 times

Online Publication Date: 8 July 2005

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Single crystals of a highly conductive oxide SrMoO3 have been grown by a floating-zone method under argon atmosphere with ultralow oxygen partial pressure p(O2) ∼ 10−25 atm. The obtained single crystals of SrMoO3 reveal quite low resistivity at 300 K ρ(300 K) = 5.1 μΩ cm, which is the lowest to date in the values of ρ(300 K) of all the oxides. Resistivity and specific heat data suggest that electrons in SrMoO3 behave as the Fermi liquid (correlated electron), and that its low resistivity is due to the extremely small electron-phonon interaction in SrMoO3.
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72.80.-r Conductivity of specific materials
72.20.-i Conductivity phenomena in semiconductors and insulators
71.45.Gm Exchange, correlation, dielectric and magnetic response functions, plasmons
63.20.K- Phonon interactions
65.40.Ba Heat capacity
81.10.Fq Growth from melts; zone melting and refining
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