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11 Jul 2005

Volume 87, Issue 2, Articles (02xxxx)

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Appl. Phys. Lett. 87, 024103 (2005); http://dx.doi.org/10.1063/1.1984098 (3 pages)

A. Dupuis, J. Léopoldès, D. G. Bucknall, and J. M. Yeomans
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Examining microcavity organic light-emitting devices having two metal mirrors

Chun-Liang Lin, Hao-Wu Lin, and Chung-Chih Wu

Appl. Phys. Lett. 87, 021101 (2005); http://dx.doi.org/10.1063/1.1988985 (3 pages) | Cited 65 times

Online Publication Date: 5 July 2005

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Optical characteristics of microcavity organic light-emitting devices (OLEDs) having two metal mirrors are examined. Analyses show that a high-reflection back mirror and a low-loss high-reflection exit mirror are essential for such microcavity devices to obtain luminance enhancement relative to conventional noncavity devices. An enhancement of 2 in cd/A efficiencies has been experimentally achieved for microcavity top-emitting OLEDs using an exit mirror composing thin metal and dielectric capping. The capping layer in the composite mirror plays the role of enhancing reflection and reducing absorption loss, rather than enhancing transmission.
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85.60.Jb Light-emitting devices
42.79.Bh Lenses, prisms and mirrors

Strong light-matter coupling at room temperature in simple geometry GaN microcavities grown on silicon

F. Semond, I. R. Sellers, F. Natali, D. Byrne, M. Leroux, J. Massies, N. Ollier, J. Leymarie, P. Disseix, and A. Vasson

Appl. Phys. Lett. 87, 021102 (2005); http://dx.doi.org/10.1063/1.1994954 (3 pages) | Cited 33 times

Online Publication Date: 5 July 2005

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The reflectance spectra of simple design GaN-based microcavities have been studied in the 5 K–300 K range. The epitaxial structure consists of the silicon substrate and the stack of buffer layers as the back mirror, a GaN active layer, and a 100 Å thick aluminium layer as the top mirror. Active layer thicknesses of λ/2, λ, or 3λ/2 were investigated. The samples with GaN thicknesses λ/2 and λ display an anticrossing behavior between the cavity and exciton modes, with measured Rabi splittings of 47 and 60 meV, respectively, both at 5 K and room temperature.
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81.05.Ea III-V semiconductors
78.66.Fd III-V semiconductors
68.55.A- Nucleation and growth
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
71.35.-y Excitons and related phenomena

Thermally widely tunable laser diodes with distributed feedback

R. Todt, T. Jacke, R. Meyer, and M.-C. Amann

Appl. Phys. Lett. 87, 021103 (2005); http://dx.doi.org/10.1063/1.1993760 (3 pages) | Cited 5 times

Online Publication Date: 6 July 2005

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A thermally widely tunable buried heterostructure laser diode with distributed feedback (DFB) is demonstrated. This device requires only two tuning currents for wide quasicontinuous wavelength tuning, thereby facilitating easy and fast device calibration and control. Furthermore, being based on regular DFB laser fabrication technology, it is readily manufacturable. By using window structures instead of cleaved facets plus antireflection coatings, a regular tuning behavior has been achieved for a DFB-like widely tunable laser diode with only two tuning currents. The laser diode covers the wavelength range between 1552 and 1602 nm. Requiring side-mode suppression ratio and output power above 30 dB and 10 mW, respectively, a wavelength range of 43 nm is accessible.
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42.60.Fc Modulation, tuning, and mode locking
42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
06.20.F- Units and standards

Time-resolved chirp in an InAs/InP quantum-dash optical amplifier operating with 10 Gbit/s data

D. Hadass, V. Mikhelashvili, G. Eisenstein, A. Somers, S. Deubert, W. Kaiser, J. P. Reithmaier, A. Forchel, D. Finzi, and Y. Maimon

Appl. Phys. Lett. 87, 021104 (2005); http://dx.doi.org/10.1063/1.1994947 (3 pages) | Cited 9 times

Online Publication Date: 6 July 2005

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We describe time-resolved chirp measurements in InAs/InP quantum-dash optical amplifiers operating at 1550 nm. We highlight the roles of gain saturation and of the saturating pulse duration relative to the gain recovery time. Using 10 Gbit/s data, we demonstrate a low transient α parameter of less than one which causes negative chirp at the leading edge and positive chirp during the trailing edge of the input pulse.
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42.60.Fc Modulation, tuning, and mode locking
42.55.Px Semiconductor lasers; laser diodes
42.65.Re Ultrafast processes; optical pulse generation and pulse compression
42.65.-k Nonlinear optics

Achieving epitaxy and intense luminescence in Ge/Rb-implanted α-quartz

P. K. Sahoo, S. Gąsiorek, K. P. Lieb, K. Arstila, and J. Keinonen

Appl. Phys. Lett. 87, 021105 (2005); http://dx.doi.org/10.1063/1.1994953 (3 pages) | Cited 5 times

Online Publication Date: 6 July 2005

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The luminescence properties of ion-beam doped silica and quartz depend sensitively on the ion species and fluence and the thermal processing during and after ion implantation. In an attempt to achieve high luminescence intensity and full planar recrystallization of α-quartz, we studied double Ge/Rb-ion implantation, where the Rb ions serve as a catalyst only. Synthetic α-quartz samples were irradiated with 175 keV Rb ions and subsequently with 120 keV Ge ions with fluences of 1×1014–1×1016 ions/cm2 and postannealed at 1170 K in air. A comparative analysis of the epitaxy, migration of the implanted ions, and cathodoluminescence (CL) were carried out. The CL spectra exhibit three strong emission bands in the blue/violet range at 2.95, 3.25, and 3.53 eV, which were assigned to Rb- and/or Ge-related defect centers. For up to 1015 implanted Ge ions/cm2, large fraction (75%) of the Ge atoms reach substitutional Si sites after the epitaxy.
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42.70.Ce Glasses, quartz
78.60.Hk Cathodoluminescence, ionoluminescence
61.80.Jh Ion radiation effects
61.72.up Other materials
81.40.Gh Other heat and thermomechanical treatments
78.40.Ha Other nonmetallic inorganics

Rapid switching in a dual-frequency hybrid aligned nematic liquid crystal cell

S. A. Jewell, T. S. Taphouse, and J. R. Sambles

Appl. Phys. Lett. 87, 021106 (2005); http://dx.doi.org/10.1063/1.1992672 (3 pages) | Cited 13 times

Online Publication Date: 8 July 2005

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We report the optical characterization of a dual-frequency hybrid aligned nematic (HAN) liquid crystal cell driven between two states using a multiple-frequency sinusoidal pulse. The complex dynamic director structure formed during the fast switching process is resolved in unprecedented detail on a submillisecond time scale. The results reveal backflow effects and a total switching time that is substantially faster than that achievable with conventional HAN cells.
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42.65.Pc Optical bistability, multistability, and switching, including local field effects
42.70.Df Liquid crystals
61.30.Gd Orientational order of liquid crystals; electric and magnetic field effects on order
42.65.Re Ultrafast processes; optical pulse generation and pulse compression
42.79.Kr Display devices, liquid-crystal devices

Tunable 30-femtosecond pulses across the deep ultraviolet

Askat E. Jailaubekov and Stephen E. Bradforth

Appl. Phys. Lett. 87, 021107 (2005); http://dx.doi.org/10.1063/1.1992655 (3 pages) | Cited 29 times

Online Publication Date: 8 July 2005

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Intense femtosecond pulses in the deep ultraviolet are generated by phase-matched four-wave mixing in an argon-filled hollow waveguide using 100-fs pulses from a commercial Ti:sapphire regenerative amplifier. Despite the long duration driving pulses, pulses as short as 25 fs with energies of >5 μJ at 266 nm are produced after a simple double-pass prism compressor. In combination with an infrared optical parametric amplifier, tunable pulses are obtained over the 224–240 nm range with energies exceeding 1 μJ, bandwidths of 5 nm and typical compressed pulsewidths of 31 fs. Excellent mode and stability make this a promising source for deep ultraviolet pump-probe experiments.
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42.60.Fc Modulation, tuning, and mode locking
42.65.Re Ultrafast processes; optical pulse generation and pulse compression
42.55.Rz Doped-insulator lasers and other solid state lasers
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
42.65.Lm Parametric down conversion and production of entangled photons

Tuning photonic crystal nanocavity modes by wet chemical digital etching

K. Hennessy, A. Badolato, A. Tamboli, P. M. Petroff, E. Hu, M. Atatüre, J. Dreiser, and A. Imamoğlu

Appl. Phys. Lett. 87, 021108 (2005); http://dx.doi.org/10.1063/1.1992656 (3 pages) | Cited 63 times

Online Publication Date: 8 July 2005

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We have developed a wet chemical digital etching technique for tuning the resonant wavelengths of photonic crystal (PC) nanocavities over a wide range of 80 nm in precise 2–3 nm steps while preserving high cavity quality factors. In one tuning step, a few monolayers of material are removed from the cavity surface by etching a self-formed native oxide in 1 mol citric acid. Due to the self-limiting oxide thickness, total tuning range is based only on the number of etch steps, resulting in a highly controlled, digital tuning ability. We have characterized the tuning behavior of GaAs PC defect cavities of both square and triangular lattice symmetry and proven the effectiveness of this method by tuning a mode into resonance with the charged exciton, and then later the biexciton, transition of a single InAs/GaAs self-assembled quantum dot.
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42.70.Qs Photonic bandgap materials
42.65.-k Nonlinear optics
81.65.Cf Surface cleaning, etching, patterning
81.05.Ea III-V semiconductors
71.35.Pq Charged excitons (trions)

Mechanisms of refractive index modification during femtosecond laser writing of waveguides in alkaline lead-oxide silicate glass

F. Vega, J. Armengol, V. Diez-Blanco, J. Siegel, J. Solis, B. Barcones, A. Pérez-Rodríguez, and P. Loza-Alvarez

Appl. Phys. Lett. 87, 021109 (2005); http://dx.doi.org/10.1063/1.1994927 (3 pages) | Cited 12 times

Online Publication Date: 8 July 2005

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We report on the mechanisms responsible for the formation of optical waveguides upon femtosecond laser irradiation of an alkaline lead-oxide silicate glass. MicroRaman spectroscopy and nonlinear fluorescence were employed to probe the local glass network structure and the formation of optically active defects respectively. At low laser pulse energies, the laser modified region is formed by a single light guiding region, whereas for pulses above 14 μJ the modified region is formed by a central dark zone, which does not guide light, accompanied by light guiding zones located in the surrounding of the dark one. This behavior is different from that observed in common silica glass systems but agrees with recent results obtained in phosphate and heavy metal oxide glasses. However, our results show that, unlike the latter glass, local densification of the glass occurs in the whole laser modified region, i.e., in the dark and the guiding zones. The suppression of light guiding in the dark region is explained by a high density of absorbing color centers.
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42.79.Gn Optical waveguides and couplers
42.65.Re Ultrafast processes; optical pulse generation and pulse compression
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
42.70.Ce Glasses, quartz
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
78.35.+c Brillouin and Rayleigh scattering; other light scattering
78.55.Hx Other solid inorganic materials
61.72.J- Point defects and defect clusters
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