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11 Jul 2005

Volume 87, Issue 2, Articles (02xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 87, 024103 (2005); http://dx.doi.org/10.1063/1.1984098 (3 pages)

A. Dupuis, J. Léopoldès, D. G. Bucknall, and J. M. Yeomans
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Silver-assisted growth of NdBa2Cu3O7−δ thin films: An approach for the growth of superior quality ceramic oxide films

J. Kurian, H. Sato, T. Makimoto, and M. Naito

Appl. Phys. Lett. 87, 022501 (2005); http://dx.doi.org/10.1063/1.1991986 (3 pages)

Online Publication Date: 5 July 2005

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We have grown NdBa2Cu3O7−δ films under silver atomic flux by molecular-beam epitaxy, which show a drastic improvement in microstructure and also crystallinity leading to a 30% enhancement in critical current density. The most remarkable point is that the final film is free from silver. The key to our process in achieving a silver-free film was the use of rf-activated oxygen that oxidizes silver, nonvolatile, to silver oxide, volatile at the deposition temperature. This process enables one to utilize the beneficial effects of silver in the growth of oxide films and at the same time ensures that the final film be free from silver, which is important for high-frequency applications. This method can be used in the growth of thin films of other complex oxide materials.
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74.78.-w Superconducting films and low-dimensional structures
74.72.-h Cuprate superconductors
81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
74.25.Sv Critical currents
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.A- Nucleation and growth
68.55.-a Thin film structure and morphology
61.72.-y Defects and impurities in crystals; microstructure

Demonstration of chip-to-chip transmission of single-flux-quantum pulses at throughputs beyond 100 Gbps

Yoshihito Hashimoto, Shinichi Yorozu, Tetsuro Satoh, and Toshiyuki Miyazaki

Appl. Phys. Lett. 87, 022502 (2005); http://dx.doi.org/10.1063/1.1993767 (3 pages) | Cited 13 times

Online Publication Date: 6 July 2005

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We report a demonstration of single-flux-quantum (SFQ) pulse transmission between superconductor chips at throughputs beyond 100 Gbps. A fabrication process with a high junction critical current density of 10 kA/cm2 was used to increase the operation speed of a pulse driver and receiver. The chips were flip-chip bonded on a passive microstrip carrier using small solder bumps with diameters of 30 μm. With experiments based on a ring-shaped circuit, chip-to-chip SFQ pulse transmission has been demonstrated up to 117 Gbps with an error rate of less than 10−15. The power dissipated by the driver and receiver was only 0.24 μW at 117 Gbps.
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84.30.Sk Pulse and digital circuits
85.25.Hv Superconducting logic elements and memory devices; microelectronic circuits

Electrical initialization and manipulation of electron spins in an L-shaped strained n-InGaAs channel

Y. K. Kato, R. C. Myers, A. C. Gossard, and D. D. Awschalom

Appl. Phys. Lett. 87, 022503 (2005); http://dx.doi.org/10.1063/1.1994930 (3 pages) | Cited 28 times

Online Publication Date: 6 July 2005

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An L-shaped strained n-InGaAs channel is used to polarize and subsequently rotate electron spins solely by means of electric fields. Precession of electrically excited spins in the absence of applied magnetic fields is directly observed by Kerr rotation microscopy. In addition, in-plane and out-of-plane components of the spin polarization in the channel are simultaneously imaged.
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78.20.Jq Electro-optical effects
72.25.Dc Spin polarized transport in semiconductors

Magnetoresistance sensor with an out-of-plane magnetized sensing layer

Sebastiaan van Dijken and J. M. D. Coey

Appl. Phys. Lett. 87, 022504 (2005); http://dx.doi.org/10.1063/1.1957111 (3 pages) | Cited 20 times

Online Publication Date: 7 July 2005

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A concept for a linear and reversible magnetoresistance sensor is demonstrated using a magnetic spin valve. The sensor is based on coherent rotation of an out-of-plane magnetized sensing layer in parallel-to-plane applied magnetic fields. For Pt/CoFe sensing layers, the sensor response depends critically on the perpendicular magnetic anisotropy of the CoFe film and, therefore, on its thickness tCoFe. Sensors with small tCoFe exhibit a high linearity up to applied fields of about 50 mT, but their magnetic field sensitivity is rather small. The sensitivity, however, increases with tCoFe and it reaches its maximum value just below the spin reorientation transition in the CoFe sensing layer.
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75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)
75.47.Np Metals and alloys
07.55.-w Magnetic instruments and components
07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
75.30.Gw Magnetic anisotropy
75.40.Gb Dynamic properties (dynamic susceptibility, spin waves, spin diffusion, dynamic scaling, etc.)

Magnetocapacitance effect in perovskite-superlattice based multiferroics

M. P. Singh, W. Prellier, Ch. Simon, and B. Raveau

Appl. Phys. Lett. 87, 022505 (2005); http://dx.doi.org/10.1063/1.1988979 (3 pages) | Cited 40 times

Online Publication Date: 7 July 2005

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We report the structural and magnetoelectrical properties of La0.7Ca0.3MnO3/BaTiO3 perovskite superlattices grown on (001)-oriented SrTiO3 by the pulsed laser deposition technique. Magnetic hysteresis loops, together with temperature dependent magnetic properties, exhibit well-defined coercivity and magnetic transition temperature (TC) ∼ 140 K. dc electrical studies of films show that the magnetoresistance (MR) is dependent on the BaTiO3 thickness, and negative MR as high as 30% at 100 K are observed. The ac electrical studies reveal that the impedance and capacitance in these films vary with the applied magnetic field due to the magnetoelectrical coupling in these structures—a key feature of multiferroics. A negative magnetocapacitance value in the film as high as 3% per tesla at 1 kHz and 100 K is demonstrated, opening the route for designing novel functional materials.
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75.50.Dd Nonmetallic ferromagnetic materials
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)
75.70.Ak Magnetic properties of monolayers and thin films
75.47.Lx Magnetic oxides
75.80.+q Magnetomechanical effects, magnetostriction
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
75.30.Kz Magnetic phase boundaries (including classical and quantum magnetic transitions, metamagnetism, etc.)
81.15.Fg Pulsed laser ablation deposition
77.80.-e Ferroelectricity and antiferroelectricity

Ferromagnetism and metal-like transport in antiferromagnetic insulator heterostructures

P. Padhan, P. Murugavel, and W. Prellier

Appl. Phys. Lett. 87, 022506 (2005); http://dx.doi.org/10.1063/1.1992657 (3 pages) | Cited 2 times

Online Publication Date: 8 July 2005

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Strained Pr0.5Ca0.5MnO3/La0.5Ca0.5MnO3/Pr0.5Ca0.5MnO3 trilayers were grown on (001)‐SrTiO3 substrates using the pulsed-laser deposition technique. The coupling at the interfaces of several trilayers has been investigated from magnetization and electronic transport experiments. An increase of La0.5Ca0.5MnO3 layer thickness induces a magnetic ordering in the strain layers and at the interfaces, leading to ferromagnetic behavior and enhanced coercivity, while resistivity shows metal-like behaviors. These effects are not observed in the parent compounds, which are antiferromagnetic insulators, opening a path to induce artificially some novel properties.
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75.50.Dd Nonmetallic ferromagnetic materials
75.50.Ee Antiferromagnetics
75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
75.47.Gk Colossal magnetoresistance
75.47.Lx Magnetic oxides
75.30.Kz Magnetic phase boundaries (including classical and quantum magnetic transitions, metamagnetism, etc.)
81.15.Fg Pulsed laser ablation deposition

Nanopatterning of a thin ferromagnetic CoFe film by focused-ion-beam irradiation

D. McGrouther and J. N. Chapman

Appl. Phys. Lett. 87, 022507 (2005); http://dx.doi.org/10.1063/1.1992661 (3 pages) | Cited 19 times

Online Publication Date: 8 July 2005

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High-resolution magnetic patterning of a thin CoFe layer has been performed by irradiation using a focused-ion-beam system. Features <50 nm wide were formed reproducibly. The irradiated pattern comprised sets of alternating 3.0- and 1.0-μm-long magnetic wires, 100 nm wide. During magnetization reversal, the longer wires reversed at a lower field resulting in the formation of an ordered array of domains with density 10 μm−1 supporting antiparallel magnetization. The ability to create domains at predefined locations is important both for fundamental studies and technological applications.
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81.16.Rf Micro- and nanoscale pattern formation
81.07.Vb Quantum wires
75.60.Jk Magnetization reversal mechanisms
75.50.Bb Fe and its alloys
61.80.Jh Ion radiation effects
61.82.Bg Metals and alloys
61.46.-w Structure of nanoscale materials
75.60.Ch Domain walls and domain structure
75.70.Kw Domain structure (including magnetic bubbles and vortices)
68.65.La Quantum wires (patterned in quantum wells)

Size dependence, nucleation, and phase transformation of FePt nanoparticles

Yi Ding and Sara A. Majetich

Appl. Phys. Lett. 87, 022508 (2005); http://dx.doi.org/10.1063/1.1993773 (3 pages) | Cited 19 times

Online Publication Date: 8 July 2005

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Monolayers of chemically prepared FePt nanoparticles were deposited on silicon nitride membrane windows, and annealed under different conditions. Hysteresis loops showed a bimodal distribution of switching fields. The size dependence determined from transmission electron microscopy was correlated with the magnetic switching field distribution, assuming that all particles above a threshold size d* had high anisotropy. This simplified model yielded a common value of d*, independent of the annealing conditions. The dependence of d* on the initial particle size indicated the importance of grain boundaries as nucleation sites, and supports the hypothesis that the fcc-to-fct phase transformation is kinetically limited.
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75.50.Tt Fine-particle systems; nanocrystalline materials
75.50.Bb Fe and its alloys
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
75.30.Gw Magnetic anisotropy
75.70.Ak Magnetic properties of monolayers and thin films
61.46.-w Structure of nanoscale materials
61.72.Mm Grain and twin boundaries
64.70.K- Solid-solid transitions
64.60.Q- Nucleation
68.37.Lp Transmission electron microscopy (TEM)
81.40.Gh Other heat and thermomechanical treatments

Perovskite manganite magnetic tunnel junctions with enhanced coercivity contrast

Y. Ishii, H. Yamada, H. Sato, H. Akoh, M. Kawasaki, and Y. Tokura

Appl. Phys. Lett. 87, 022509 (2005); http://dx.doi.org/10.1063/1.1995955 (3 pages) | Cited 17 times

Online Publication Date: 8 July 2005

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We have fabricated (La,Sr)MnO3 (LSMO)-based magnetic tunnel junctions with Ru-doped LSMO (LSMRO) film used as one of the electrodes. The Ru doping enhances the coercivity of LSMO, resulting in a sharp steplike tunnel magnetoresistance (TMR) response with a high contrast in the coercive field (Hc) for magnetization reversal. Although the difference of the Hc between the top LSMRO and the bottom LSMO electrodes decreases with increasing the temperature, it is large enough to give a clear TMR response even at a relatively higher temperature region of around 200 K. By changing the dimensions of the top LSMRO electrode, the Hc is found to have no dependence on the geometric aspect variations of the top electrode but slightly on the junction area.
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75.50.Dd Nonmetallic ferromagnetic materials
72.20.My Galvanomagnetic and other magnetotransport effects
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
75.60.Jk Magnetization reversal mechanisms
61.72.up Other materials
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