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11 Jul 2005

Volume 87, Issue 2, Articles (02xxxx)

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Appl. Phys. Lett. 87, 024103 (2005); http://dx.doi.org/10.1063/1.1984098 (3 pages)

A. Dupuis, J. Léopoldès, D. G. Bucknall, and J. M. Yeomans
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Tunable magnetic fluid grating by applying a magnetic field

Shengli Pu, Xianfeng Chen, Lijun Chen, Weijun Liao, Yuping Chen, and Yuxing Xia

Appl. Phys. Lett. 87, 021901 (2005); http://dx.doi.org/10.1063/1.1991984 (3 pages) | Cited 18 times

Online Publication Date: 5 July 2005

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A kind of tunable magnetic fluid grating is developed in this letter. The operating principle of the tunable magnetic fluid grating is analyzed theoretically. When the absorption coefficient modulation of the grating is not too large, the energy of the zeroth-order diffracted light can be transferred to that of the higher-order completely and vice versa. Experiments are done to investigate the tunable diffraction properties of the magnetic fluid grating, and the transfer of the energy of the zeroth-order diffracted light to that of the higher-order is apparent.
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42.79.Dj Gratings
42.25.Fx Diffraction and scattering
42.25.Bs Wave propagation, transmission and absorption

Diffusion of nitrogen in silicon

N. Fujita, R. Jones, J. P. Goss, P. R. Briddon, T. Frauenheim, and S. Öberg

Appl. Phys. Lett. 87, 021902 (2005); http://dx.doi.org/10.1063/1.1991996 (3 pages) | Cited 11 times

Online Publication Date: 7 July 2005

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We use local density functional theory to investigate the diffusion of nitrogen dimers in silicon. We investigate several trajectories for the diffusing dimer finding an alternative one whose barrier is 2.69 eV and in close agreement with experimental diffusion data carried out at high temperature. We suggest that recent reports of a low barrier of 1.45 eV found from studies of dislocation unlocking are to be understood from the interaction of nitrogen dimers with interstitials or vacancies released by the dislocation.
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66.30.J- Diffusion of impurities
61.72.J- Point defects and defect clusters
61.72.Hh Indirect evidence of dislocations and other defects (resistivity, slip, creep, strains, internal friction, EPR, NMR, etc.)

Effect of multilayer barriers on the optical properties of GaInNAs single quantum-well structures grown by metalorganic vapor phase epitaxy

H. D. Sun, A. H. Clark, S. Calvez, M. D. Dawson, K. S. Kim, T. Kim, and Y. J. Park

Appl. Phys. Lett. 87, 021903 (2005); http://dx.doi.org/10.1063/1.1993758 (3 pages) | Cited 6 times

Online Publication Date: 7 July 2005

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We report on the effects of combined strain-compensating and strain-mediating layers of various widths on the optical properties of 1.3 μm GaInNAs∕GaAs single quantum well structures grown by metalorganic vapor phase epitaxy (MOVPE). While the emission wavelength of GaInNAs∕GaAs quantum wells can be redshifted by the adoption of strain-compensated GaNAs layers, the material quality is degraded by the increased stress at the well∕barrier interface. This detrimental effect can be cured by inserting a strain-mediating InGaAs layer between them. Contrary to what is expected, however, the emission wavelength is blueshifted by the insertion of the InGaAs layer, which is attributed to the reduced N incorporation due to the improved interface quality. Our results indicate that the optical properties of MOVPE-grown GaInNAs∕GaAs quantum wells can be optimized in quantum efficiency and emission wavelength by combination of strain-compensating and strain-mediating layers with suitable characteristics.
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81.07.St Quantum wells
81.05.Ea III-V semiconductors
78.67.De Quantum wells
78.55.Cr III-V semiconductors
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.15.Kk Vapor phase epitaxy; growth from vapor phase
68.65.Fg Quantum wells

Microscale application of column theory for high resolution force and displacement sensing

B. A. Samuel, A. V. Desai, and M. A. Haque

Appl. Phys. Lett. 87, 021904 (2005); http://dx.doi.org/10.1063/1.1989440 (3 pages) | Cited 4 times

Online Publication Date: 7 July 2005

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We present the design, fabrication, and experimental validation of a device which exploits the amplification of displacement and attenuation of structural stiffness in the post-buckling deformation of slender columns to obtain pico-Newton force and nanometer displacement resolution, even under an optical microscope. The extremely small size, purely mechanical sensing scheme and vacuum compatibility of the instrument makes it compatible with existing visualization tools of nanotechnology. The instrument has a wide variety of potential applications ranging from electro-mechanical characterization of one dimensional solids to single biological cells.
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07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices
07.10.Pz Instruments for strain, force, and torque
46.32.+x Static buckling and instability

Suppressing the thermal lens effect by magnetic-field-induced mass transfer and phase separation in a magnetic fluid

Shengli Pu, Xianfeng Chen, Lijun Chen, Weijun Liao, Yuping Chen, and Yuxing Xia

Appl. Phys. Lett. 87, 021905 (2005); http://dx.doi.org/10.1063/1.1996841 (3 pages) | Cited 5 times

Online Publication Date: 8 July 2005

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A method for suppressing the thermal lens effect in a magnetic fluid is proposed in this letter. When an external parallel magnetic field is applied, the thermal lens effect is weakened, and the degree of the divergence of the laser beam after passing through the magnetic fluid decreases. By experimental measurement and theoretical analysis, we assign this phenomenon to two physical mechanisms: the magnetic-field-induced mass transfer and phase separation in the magnetic fluid. With this method, the quality of the magnetic-fluid-based potential photonic devices can be improved.
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78.20.N- Thermo-optic effects
78.20.nb Photothermal effects
75.50.Mm Magnetic liquids
64.75.-g Phase equilibria

Eu locations in Eu-doped InGaN/GaN quantum dots

Thomas Andreev, Eva Monroy, Bruno Gayral, Bruno Daudin, Nguyen Quang Liem, Yuji Hori, Mitsuhiro Tanaka, Osamu Oda, and Daniel Le Si Dang

Appl. Phys. Lett. 87, 021906 (2005); http://dx.doi.org/10.1063/1.1992667 (3 pages) | Cited 9 times

Online Publication Date: 8 July 2005

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We report on the photoluminescence and photoluminescence excitation studies of Eu-doped wurtzite InGaN quantum dots (QDs) embedded in a GaN matrix grown by plasma-assisted molecular-beam epitaxy. The location of Eu3+ ions either in InGaN QDs or in the GaN spacing layer is assigned by comparing the different behaviors of the math→math emission around 620 nm under various photoexcitation energies and temperatures to those observed in Eu-doped GaN/AlN QDs and a Eu-doped GaN thick layer.
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78.67.Hc Quantum dots
78.55.Cr III-V semiconductors
81.05.Ea III-V semiconductors
81.07.Ta Quantum dots
61.72.uj III-V and II-VI semiconductors

Low-temperature metalorganic chemical vapor deposition of luminescent manganese-doped aluminum nitride films

A. Sato, K. Azumada, T. Atsumori, and K. Hara

Appl. Phys. Lett. 87, 021907 (2005); http://dx.doi.org/10.1063/1.1992669 (3 pages) | Cited 6 times

Online Publication Date: 8 July 2005

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Mn-doped AlN films have been prepared at a substrate temperature of 400 °C by metalorganic chemical vapor deposition using bismethylcyclopentadienyl manganese as a Mn source. The Mn concentration in the films (CMn) was controlled extensively in the region from 2×1018 to 1×1021 cm−3. The samples showed red-orange photoluminescence (PL) and cathodoluminescence (CL) originated from the transition of 3d-electrons in Mn ions incorporated in AlN. The maximum emission intensities were observed at different CMn for PL and CL, which was discussed in terms of the excitation mechanism of the Mn center. The electroluminescence (EL) property was also investigated by fabricating thin-film EL devices with the AlN:Mn active layer on glass substrates.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.15.Kk Vapor phase epitaxy; growth from vapor phase
78.66.Fd III-V semiconductors
78.55.Cr III-V semiconductors
81.05.Ea III-V semiconductors
78.60.Hk Cathodoluminescence, ionoluminescence
78.60.Fi Electroluminescence

Effects of growth temperature on the structural and optical properties of 1.55 μm GaInNAsSb quantum wells grown on GaAs

Seth R. Bank, Homan B. Yuen, Mark A. Wistey, Vincenzo Lordi, Hopil P. Bae, and James S. Harris

Appl. Phys. Lett. 87, 021908 (2005); http://dx.doi.org/10.1063/1.1993772 (3 pages) | Cited 8 times

Online Publication Date: 8 July 2005

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We investigate the effects of growth temperature on the structural and optical properties of GaInNAsSb single quantum wells grown by molecular beam epitaxy. Peak room-temperature photoluminescence occurred at 1.65 μm as-grown and at 1.55 μm under optimal annealing conditions. Excellent room-temperature optical efficiency was observed from samples grown between 420 and 460 °C, with a maximum at 440 °C. However, luminescence was degraded approximately two orders of magnitude for a sample grown at 470 °C. High-resolution x-ray diffraction showed substantial structural degradation and a reduction in strain for the 470 °C sample. Low temperature photoluminescence measurements were also employed to study localization and quenching effects; both became more severe with increasing growth temperature.
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81.05.Ea III-V semiconductors
81.07.St Quantum wells
61.72.Cc Kinetics of defect formation and annealing
68.65.Fg Quantum wells
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
78.67.De Quantum wells
78.55.Cr III-V semiconductors
81.40.Gh Other heat and thermomechanical treatments

Bulk cohesive energy and surface tension from the size-dependent evaporation study of nanoparticles

K. K. Nanda

Appl. Phys. Lett. 87, 021909 (2005); http://dx.doi.org/10.1063/1.1994958 (3 pages) | Cited 24 times

Online Publication Date: 8 July 2005

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In this letter, it is shown that the bulk cohesive energy (EB) and bulk surface tension (γ) can be deduced from the size-dependent evaporation (SDE) study of free nanoparticles. The surface tension of nanoparticles (γn) is obtained by analyzing SDE data on the basis of the Kelvin equation, while EB is obtained by reanalyzing the SDE data. By comparing the size-dependent melting and the SDE of nanoparticles, γ is evaluated.
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68.03.Cd Surface tension and related phenomena
64.70.F- Liquid-vapor transitions
61.46.-w Structure of nanoscale materials
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