APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

18 Jul 2005

Volume 87, Issue 3, Articles (03xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 87, 033501 (2005); http://dx.doi.org/10.1063/1.1992665 (3 pages)

Yoshihito Miyoshi, Fumito Nakajima, Junichi Motohisa, and Takashi Fukui
Enlarge Image | Read More
Page 1 of 3 Pages Next Page | Jump to Page
back to top
RSS Feeds

Variable holographic femtosecond laser processing by use of a spatial light modulator

Yoshio Hayasaki, Takashi Sugimoto, Akihiro Takita, and Nobuo Nishida

Appl. Phys. Lett. 87, 031101 (2005); http://dx.doi.org/10.1063/1.1992668 (3 pages) | Cited 7 times

Online Publication Date: 11 July 2005

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We propose a holographic femtosecond laser processing system capable of parallel, arbitrary, and variable patterning. These features are achieved by introducing a spatial light modulator displaying a hologram into the femtosecond laser processing system. We demonstrate the variable parallel processing of a glass sample.
Show PACS
42.40.Jv Computer-generated holograms
42.65.Re Ultrafast processes; optical pulse generation and pulse compression
42.86.+b Optical workshop techniques
42.62.-b Laser applications
42.79.Hp Optical processors, correlators, and modulators
42.79.Kr Display devices, liquid-crystal devices
85.60.Pg Display systems

Double interference fluorescence enhancement from reflective slides: Application to bicolor microarrays

H. Choumane, N. Ha, C. Nelep, A. Chardon, G. O. Reymond, C. Goutel, G. Cerovic, F. Vallet, C. Weisbuch, and H. Benisty

Appl. Phys. Lett. 87, 031102 (2005); http://dx.doi.org/10.1063/1.1999018 (3 pages) | Cited 17 times

Online Publication Date: 11 July 2005

Full Text: Read Online (HTML) | Download PDF

Show Abstract
A technique for enhancing fluorescence from species close to a substrate is described, based on a multilayer dielectric mirror coating. For proper design, interferences bring improvements to both fluorescence excitation and collection, each about four fold. The overall improvement reaches 10 to 15 fold as compared to a standard glass slide. We apply this to so-called deoxyribonucleic acid (DNA) chips, that is to DNA hybridization assays on microarray platforms, for which two fluorophores most commonly used are cyanine dyes (Cy3™ and Cy5™). Impact of the two-color scheme is discussed. A validation method based on spin-coated fluorescent ultrathin layers is shown to accurately determine the amplification factors of the different tagging dyes.
Show PACS
87.80.-y Biophysical techniques (research methods)
87.64.-t Spectroscopic and microscopic techniques in biophysics and medical physics
87.15.-v Biomolecules: structure and physical properties
87.14.G- Nucleic acids
42.79.Bh Lenses, prisms and mirrors
42.79.Wc Optical coatings

Polarization mode splitting in monolithic polymer microcavities

Luana Persano, Elisa Mele, Roberto Cingolani, and Dario Pisignano

Appl. Phys. Lett. 87, 031103 (2005); http://dx.doi.org/10.1063/1.1994956 (3 pages) | Cited 12 times

Online Publication Date: 11 July 2005

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We demonstrate the mode splitting of the resonant emission from a symmetric monolithic organic semiconductor microcavity. The device, realized by low-temperature reactive electron-beam evaporation and deposition of a conjugated polymer, exhibits a 100 meV polarization-induced splitting of the transmission and emission resonances for angles larger than 45°. This opens the way for the realization of novel polarized-emitting optoelectronic devices based on plastic materials.
Show PACS
85.40.-e Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology
85.60.-q Optoelectronic devices
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Polyfluorene distributed feedback lasers operating in the green-yellow spectral region

R. Xia, G. Heliotis, P. N. Stavrinou, and D. D. C. Bradley

Appl. Phys. Lett. 87, 031104 (2005); http://dx.doi.org/10.1063/1.1994928 (3 pages) | Cited 32 times

Online Publication Date: 11 July 2005

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We report solid-state, optically pumped poly(9,9-dioctylfluorene-co-benzothiadiazole) (F8BT), distributed feedback lasers that operate in the green-yellow spectral region, previously unaddressed with conjugated polymer gain media. The lasers were fabricated by spin coating F8BT (the gain medium) onto one-dimensional gratings patterned in silica substrates. The emission wavelength could be selected to lie within the range from 558 to 591 nm by controlling the F8BT film thickness and grating periodicity. The minimum lasing threshold of 6.5 nJ per pump pulse (10 ns, 10 Hz, 450 nm) was achieved for a 350 nm spatial period grating with a 180 nm thickness F8BT film. The corresponding emission wavelength was 573 nm and the laser slope efficiency was a relatively high 3%.
Show PACS
42.60.Fc Modulation, tuning, and mode locking
42.65.Re Ultrafast processes; optical pulse generation and pulse compression
42.79.Dj Gratings
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

High-quality factor optical microcavities using oxide apertured micropillars

N. G. Stoltz, M. Rakher, S. Strauf, A. Badolato, D. D. Lofgreen, P. M. Petroff, L. A. Coldren, and D. Bouwmeester

Appl. Phys. Lett. 87, 031105 (2005); http://dx.doi.org/10.1063/1.1999843 (3 pages) | Cited 13 times

Online Publication Date: 12 July 2005

Full Text: Read Online (HTML) | Download PDF

Show Abstract
An oxide aperture is used to confine optical modes in a micropillar structure. This method overcomes the limitations due to sidewall scattering loss typical in semiconductor etched micropillars. High cavity quality factors (Q) up to 48 000 are determined by external Fabry–Perot cavity scanning measurements, a significantly higher value than prior work in III-V etched micropillars. Measured Q values and estimated mode volumes correspond to a maximum Purcell factor figure of merit value of 72.
Show PACS
85.30.-z Semiconductor devices

Efficient continuous-wave holey fiber Raman laser

J. C. Travers, S. V. Popov, and J. R. Taylor

Appl. Phys. Lett. 87, 031106 (2005); http://dx.doi.org/10.1063/1.2000328 (3 pages) | Cited 9 times

Online Publication Date: 13 July 2005

Full Text: Read Online (HTML) | Download PDF

Show Abstract
A continuous wave Raman laser, with only 100 m of holey fiber as the Raman gain medium, is reported in a linear cavity all-fiber configuration. Slope efficiencies of 29% with a threshold of 2.7 W and 77% with a threshold of 3.7 W were achieved with a maximum output power of 3.6 W at 1.12 μm. The estimated holey fiber Raman gain coefficient of ∼ 17 W−1 km−1 is over 40 times larger than that of a standard telecommunication fiber.
Show PACS
42.55.Wd Fiber lasers
42.60.By Design of specific laser systems
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering

Highly efficient and stable luminescence of nanocrystalline porous silicon treated by high-pressure water vapor annealing

B. Gelloz, A. Kojima, and N. Koshida

Appl. Phys. Lett. 87, 031107 (2005); http://dx.doi.org/10.1063/1.2001136 (3 pages) | Cited 55 times

Online Publication Date: 14 July 2005

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The effects of a treatment based on high-pressure water vapor annealing (HWA) on nanocrystalline porous silicon have been investigated in terms of the photoluminescence (PL) efficiency and stability. For originally nonluminescent samples with a relatively low porosity, the treatment produces highly efficient and stable luminescent nanocrystalline-Si (nc-Si) layers without affecting the emission wavelength. Under appropriate conditions of pressure (2.6 MPa) and temperature (260 °C), the PL external quantum efficiency reaches 23% at room temperature. Electron-spin-resonance and infrared absorption analyses show that the HWA treatment promotes surface oxidation of nc-Si under a minimized mechanical stress and consequently generates sufficiently passivated nc-Si/SiO2 interfaces with an extremely low nonradiative defect density. This causes a drastic enhancement in the PL efficiency associated with a strong localization of excitons in nc-Si. As a practical approach, the HWA technique is very useful for fabrication of efficient and stable optoelectronic nc-Si devices.
Show PACS
81.05.Cy Elemental semiconductors
81.07.Bc Nanocrystalline materials
81.05.Rm Porous materials; granular materials
78.55.Ap Elemental semiconductors
61.72.Cc Kinetics of defect formation and annealing
78.67.Bf Nanocrystals, nanoparticles, and nanoclusters
78.30.Am Elemental semiconductors and insulators
71.35.-y Excitons and related phenomena
73.22.Lp Collective excitations
62.50.-p High-pressure effects in solids and liquids
81.40.Vw Pressure treatment
61.46.-w Structure of nanoscale materials
81.65.Mq Oxidation
81.16.Pr Micro- and nano-oxidation
76.30.Da Ions and impurities: general
61.43.Gt Powders, porous materials
78.55.Mb Porous materials

Investigation of strontium silicate yellow phosphors for white light emitting diodes from a combinatorial chemistry

Joung Kyu Park, Kyoung Jae Choi, Kyoung Nam Kim, and Chang Hae Kim

Appl. Phys. Lett. 87, 031108 (2005); http://dx.doi.org/10.1063/1.1984103 (3 pages) | Cited 23 times

Online Publication Date: 14 July 2005

Full Text: Read Online (HTML) | Download PDF

Show Abstract
In order to develop yellow phosphors that emit efficiently under the 450–470 nm excitation range, combinatorial chemistry was used based on silicate materials and investigated in an attempt to develop white light-emitting diodes (LEDs) by combining it with an InGaN blue LED chip (460 nm). Quaternary and ternary combinatorial libraries were developed to synthesize, process, and screen for silicate materials. Our combinatorial chemistry system consists of solution-based combinatorial synthesis and characterization, enabling the swift scanning of luminance. As a consequence of the combinatorial approach, several candidates were found to show high luminance under the 450–470 nm excitation range.
Show PACS
85.60.Jb Light-emitting devices

Single-mode vertical-cavity surface-emitting laser with ring-shaped light-emitting aperture

Jin-Wei Shi, C.-H. Jiang, K.-M. Chen, J.-L. Yen, and Ying-Jay Yang

Appl. Phys. Lett. 87, 031109 (2005); http://dx.doi.org/10.1063/1.1997282 (3 pages) | Cited 6 times

Online Publication Date: 14 July 2005

Full Text: Read Online (HTML) | Download PDF

Show Abstract
In this letter, we demonstrate a single-mode vertical-cavity surface-emitting laser (VCSEL) with a ring-shaped light-emitting aperture, which is realized by the Zn diffusion technique, at a wavelength of 850 nm. Relative to the control VCSEL with an ordinary circular aperture and the same geometry and size, the demonstrated device can suppress the higher-order transverse mode more effectively without affecting the threshold current and output power. Compared with typical reported single-mode VCSELs, a larger light-emitting aperture and current-confined area with a smaller divergence angle of the output beam, and lower differential resistance are achieved with the present structure.
Show PACS
42.55.Px Semiconductor lasers; laser diodes

High-definition vertically aligned liquid crystal microdisplays using a circularly polarized light

Kuan-Hsu Fan-Chiang, Shu-Hsia Chen, and Shin-Tson Wu

Appl. Phys. Lett. 87, 031110 (2005); http://dx.doi.org/10.1063/1.1999837 (3 pages) | Cited 2 times

Online Publication Date: 14 July 2005

Full Text: Read Online (HTML) | Download PDF

Show Abstract
A high-definition vertically aligned liquid crystal (LC) microdisplay exhibits a excellent contrast ratio, but its fringing field effect splits the bright state unevenly and leads to a very slow response time. By utilizing a circularly polarized light instead of conventional linearly polarized light, we have overcome the long-standing problems of poor sharpness, low brightness, and slow response time. Confirming computer simulations agree with the experimental results well. This approach can be applied to both reflective and transmissive LC microdisplays.
Show PACS
42.79.Kr Display devices, liquid-crystal devices
85.60.Pg Display systems

Internal high-reflectivity omni-directional reflectors

J.-Q. Xi, Manas Ojha, J. L. Plawsky, W. N. Gill, Jong Kyu Kim, and E. F. Schubert

Appl. Phys. Lett. 87, 031111 (2005); http://dx.doi.org/10.1063/1.1997270 (3 pages) | Cited 21 times

Online Publication Date: 15 July 2005

Full Text: Read Online (HTML) | Download PDF

Show Abstract
An internal high-reflectivity omni-directional reflector (ODR) for the visible spectrum is realized by the combination of total internal reflection using a low-refractive-index (low-n) material and reflection from a one-dimensional photonic crystal (1D PC). The low-n layer limits the range of angles in the 1D PC to values below the Brewster angle, thereby enabling high reflectivity and omni-directionality. This ODR is demonstrated using GaP as ambient, nanoporous SiO2 with a very low refractive index (n = 1.10), and a four-pair TiO2/SiO2 multilayer stack. The results indicate a two orders of magnitude lower angle-integrated transverse-electric-transverse-magnetic polarization averaged mirror loss of the ODR compared with conventional distributed Bragg reflectors and metal reflectors. This indicates the high potential of the internal ODRs for optoelectronic semiconductor devices, e.g., light-emitting diodes.
Show PACS
42.79.Bh Lenses, prisms and mirrors
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
42.70.Qs Photonic bandgap materials
78.67.Pt Multilayers; superlattices; photonic structures; metamaterials

Optical-feedback-induced stability and instability in broad-area semiconductor lasers

Yasuhiro Fujita and Junji Ohtsubo

Appl. Phys. Lett. 87, 031112 (2005); http://dx.doi.org/10.1063/1.1999850 (3 pages) | Cited 4 times

Online Publication Date: 15 July 2005

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Stable and unstable oscillations of broad-area semiconductor laser with optical feedback are experimentally examined. We observe stable oscillations and also coexistent states between stable oscillations and low-frequency fluctuations depending on the feedback positions of the laser beam in the active layer. The laser shows single mode operations both for the oscillation frequency and the spatial mode when it is stabilized.
Show PACS
42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
back to top
RSS Feeds

Low-dimensional phonon specific heat of titanium dioxide nanotubes

C. Dames, B. Poudel, W. Z. Wang, J. Y. Huang, Z. F. Ren, Y. Sun, J. I. Oh, C. Opeil, M. J. Naughton, and G. Chen

Appl. Phys. Lett. 87, 031901 (2005); http://dx.doi.org/10.1063/1.1990269 (3 pages) | Cited 17 times

Online Publication Date: 11 July 2005

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The specific heat of multiwalled titanium dioxide (anatase phase) nanotubes has been measured between 1.5 and 95 K. Bulk anatase and rutile were also measured. The nanotube specific heat approaches that of bulk anatase at high temperatures. Below about 50 K the nanotube specific heat begins to show large enhancements compared to bulk. Using an isotropic elastic continuum model, this can be understood qualitatively as a transition to low-dimensional behavior. Below about 3 K there is a second transition and the nanotube specific heat becomes nearly constant, exceeding bulk anatase by an order of magnitude or more at 1.5 K.
Show PACS
65.80.-g Thermal properties of small particles, nanocrystals, nanotubes, and other related systems
63.22.-m Phonons or vibrational states in low-dimensional structures and nanoscale materials

Structural characterization of zincblende Ga1−xMnxN epilayers grown by molecular beam epitaxy on (001) GaAs substrates

M. W. Fay, Y. Han, P. D. Brown, S. V. Novikov, K. W. Edmonds, R. P. Campion, B. L. Gallagher, and C. T. Foxon

Appl. Phys. Lett. 87, 031902 (2005); http://dx.doi.org/10.1063/1.1995945 (3 pages) | Cited 1 time

Online Publication Date: 11 July 2005

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Zincblende p-type Ga1−xMnxN epilayers, grown with and without AlN/GaN buffer layers using plasma-assisted molecular beam epitaxy on (001) oriented GaAs substrates, have been investigated using a variety of complementary transmission electron microscopy techniques. The epilayers were found to contain a high anisotropic density of stacking faults and microtwins. MnAs inclusions were identified at the Ga1−xMnxN/(001)GaAs interface extending into the substrate. The use of AlN/GaN buffer layers was found to inhibit the formation of these inclusions.
Show PACS
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.-a Thin film structure and morphology
61.72.Qq Microscopic defects (voids, inclusions, etc.)
61.72.Nn Stacking faults and other planar or extended defects
61.72.Mm Grain and twin boundaries

Atomically straight steps on vicinal Si(111) surfaces prepared by step-parallel current in the kink-up direction

S. Yoshida, T. Sekiguchi, and K. M. Itoh

Appl. Phys. Lett. 87, 031903 (2005); http://dx.doi.org/10.1063/1.1995946 (3 pages) | Cited 14 times

Online Publication Date: 11 July 2005

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We demonstrate that annealing of a vicinal Si(111) surface at about 800 °C with a direct current in the direction that ascends the kinks enhances the formation of atomically straight step edges over micrometer lengths, while annealing with a current in the opposite direction does not. Every straight step edge has the same atomic configuration U(2, 0), which is useful as a template for the formation of a variety of nanostructures. A phenomenological model based on electromigration of charged mobile atoms explains the observed current-polarity dependent behavior.
Show PACS
68.47.Fg Semiconductor surfaces
68.35.B- Structure of clean surfaces (and surface reconstruction)
68.35.Fx Diffusion; interface formation
61.72.Cc Kinetics of defect formation and annealing
66.30.Qa Electromigration

Quality factors of qubit rotations in single semiconductor quantum dots

Q. Q. Wang, A. Muller, P. Bianucci, C. K. Shih, and Q. K. Xue

Appl. Phys. Lett. 87, 031904 (2005); http://dx.doi.org/10.1063/1.1995950 (3 pages) | Cited 6 times

Online Publication Date: 11 July 2005

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The quality factors of quantum bit (qubit) rotations in single self-assembled quantum dots were investigated using photoluminescence spectroscopy. Rotations with azimuthal angle ϕ along the equator of the qubit sphere were implemented by varying the time delay between two π/2 pulses, resulting in a “free rotation” quality factor Q0 = 9.8×104. Qubit rotations with polar angle θ as large as 10π along the meridian of the qubit sphere (Rabi oscillations with zero detuning) were realized with a quality factor QR ∼ 18, in experiments probing an excited excitonic state.
Show PACS
73.21.La Quantum dots
78.55.-m Photoluminescence, properties and materials
71.35.-y Excitons and related phenomena
03.67.Lx Quantum computation architectures and implementations

Depletion regions in the aluminum-induced layer exchange process crystallizing amorphous Si

Jens Schneider, Juliane Klein, Martin Muske, Stefan Gall, and Walther Fuhs

Appl. Phys. Lett. 87, 031905 (2005); http://dx.doi.org/10.1063/1.1996849 (3 pages) | Cited 7 times

Online Publication Date: 12 July 2005

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Annealing of aluminum/amorphous silicon bilayers below the eutectic temperature of the aluminum/silicon system leads to an exchange of the layer positions and a concurrent crystallization of silicon (aluminum-induced layer exchange). This letter discusses a model for the self-limited suppression of nucleation during the process. This characteristic feature is the reason why large grain sizes can be obtained. In our experiments, we combine nucleation caused by supersaturation and undercooling. Si depletion regions around existing grains are made visible. These experiments give direct proof of the idea that the suppression of nucleation occurs by Si depletion in the aluminum-induced layer exchange process.
Show PACS
81.05.Cy Elemental semiconductors
81.05.Gc Amorphous semiconductors
64.70.K- Solid-solid transitions
81.40.Gh Other heat and thermomechanical treatments

Micro-Raman and photoluminescence studies of neutron-irradiated gallium nitride epilayers

R. X. Wang, S. J. Xu, S. Fung, C. D. Beling, K. Wang, S. Li, Z. F. Wei, T. J. Zhou, J. D. Zhang, Ying Huang, and M. Gong

Appl. Phys. Lett. 87, 031906 (2005); http://dx.doi.org/10.1063/1.1999011 (3 pages) | Cited 11 times

Online Publication Date: 12 July 2005

Full Text: Read Online (HTML) | Download PDF

Show Abstract
GaN epilayers grown on sapphire substrate were irradiated with various dosages of neutrons and were characterized using Micro-Raman and photoluminescence. It was found that the A1(LO) peak in the Raman spectra clearly shifted with neutron irradiation dosage. Careful curve fitting of the Raman data was carried out to obtain the carrier concentration which was found to vary with the neutron irradiation dosage. The variation of the full width at half maximum height of the photoluminescence was consistent with the Raman results. The neutron irradiation-induced structural defects (likely to be GeGa) give rise to carrier trap centers which are responsible for the observed reduction in carrier concentration of the irradiated GaN.
Show PACS
81.05.Ea III-V semiconductors
61.82.Fk Semiconductors
61.80.Hg Neutron radiation effects
61.72.-y Defects and impurities in crystals; microstructure
78.66.Fd III-V semiconductors
78.55.Cr III-V semiconductors
78.30.Fs III-V and II-VI semiconductors
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths

Ion-beam texturing of uniaxially textured Ni films

S. J. Park, D. P. Norton, and Venkat Selvamanickam

Appl. Phys. Lett. 87, 031907 (2005); http://dx.doi.org/10.1063/1.1957121 (3 pages) | Cited 6 times

Online Publication Date: 12 July 2005

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The formation of biaxial texture in uniaxially textured Ni thin films via Ar-ion irradiation is reported. The ion-beam irradiation was not simultaneous with deposition. Instead, the ion beam irradiates the uniaxially textured film surface with no impinging deposition flux, which differs from conventional ion-beam-assisted deposition. The uniaxial texture is established via a nonion beam process, with the in-plane texture imposed on the uniaxial film via ion beam bombardment. Within this sequential ion beam texturing method, grain alignment is driven by selective etching and grain overgrowth.
Show PACS
81.05.Bx Metals, semimetals, and alloys
61.80.Jh Ion radiation effects
68.55.-a Thin film structure and morphology
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
81.65.Cf Surface cleaning, etching, patterning

Aligned silver nanorod arrays produce high sensitivity surface-enhanced Raman spectroscopy substrates

Stephen B. Chaney, Saratchandra Shanmukh, Richard A. Dluhy, and Y.-P. Zhao

Appl. Phys. Lett. 87, 031908 (2005); http://dx.doi.org/10.1063/1.1988980 (3 pages) | Cited 136 times

Online Publication Date: 13 July 2005

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Substrates consisting of silver nanorod arrays with an irregular surface lattice (i.e., random nucleation sites) and with varying rod lengths were fabricated by an oblique angle vapor deposition method. These arrays were evaluated as potential surface-enhanced Raman spectroscopy (SERS) substrates using trans-1,2-bis(4-pyridyl)ethene as a reported molecule. SERS activity was shown to depend upon the length of the nanorods. The Ag nanorods with average lengths of 508.29±44.86 nm, and having aspect ratios of 5.69±1.49 exhibited the maximum SERS enhancement factors of greater than 108. Theoretical calculations indicate that this large SERS enhancement may be partially explained by the shape, density, and lateral arrangement of the Ag nanorod arrays.
Show PACS
81.07.Bc Nanocrystalline materials
68.47.De Metallic surfaces
78.30.-j Infrared and Raman spectra
68.35.B- Structure of clean surfaces (and surface reconstruction)
61.46.-w Structure of nanoscale materials
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Process development and bonding quality investigations of silicon layer stacking based on copper wafer bonding

K. N. Chen, S. M. Chang, A. Fan, C. S. Tan, L. C. Shen, and R. Reif

Appl. Phys. Lett. 87, 031909 (2005); http://dx.doi.org/10.1063/1.1995943 (3 pages) | Cited 4 times

Online Publication Date: 13 July 2005

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Process development of silicon layer stacking based on copper wafer bonding, grind-back, and etch-back was applied to demonstrate a strong four-layer-stack structure. Bonded copper layers in this structure became homogeneous layers and did not show original bonding interfaces. This process can be used in three-dimensional integrated circuit applications. Voids and total bonded area after each layer stacking were investigated for the bonding quality after each layer stacking. Large wafer bows from high residual stresses result in the structure failure at the stacking of a high number of layers.
Show PACS
85.40.Ls Metallization, contacts, interconnects; device isolation
85.30.De Semiconductor-device characterization, design, and modeling
81.65.Cf Surface cleaning, etching, patterning
81.65.Ps Polishing, grinding, surface finishing

Effects of surface imperfections on deformation and failure of amorphous metals

Qi-Kai Li and Mo Li

Appl. Phys. Lett. 87, 031910 (2005); http://dx.doi.org/10.1063/1.1999013 (3 pages) | Cited 24 times

Online Publication Date: 14 July 2005

Full Text: Read Online (HTML) | Download PDF

Show Abstract
A series of notch tests are conducted using molecular dynamics simulation to study the effects of surface imperfections on deformation and failure behaviors in amorphous metals. It is shown that the surface notches of radius as small as 1 nm could trigger rapid failure; and the notch depth is much more effective than the radius in causing brittleness. The intrinsic ductility and brittleness caused by surface imperfections in amorphous metals under external loading are discussed.
Show PACS
61.43.-j Disordered solids
81.05.Kf Glasses (including metallic glasses)
68.47.De Metallic surfaces
68.35.B- Structure of clean surfaces (and surface reconstruction)
81.40.Np Fatigue, corrosion fatigue, embrittlement, cracking, fracture, and failure
81.40.Lm Deformation, plasticity, and creep
62.20.M- Structural failure of materials
62.20.F- Deformation and plasticity
61.43.Bn Structural modeling: serial-addition models, computer simulation

Element-selective vertical height determination for an organic monolayer by a scanned-energy photoelectron-yield soft x-ray standing wave technique

H. Kondoh, R. Yokota, K. Amemiya, T. Shimada, I. Nakai, M. Nagasaka, T. Ohta, T. Nakamura, and H. Takenaka

Appl. Phys. Lett. 87, 031911 (2005); http://dx.doi.org/10.1063/1.1994952 (3 pages)

Online Publication Date: 14 July 2005

Full Text: Read Online (HTML) | Download PDF

Show Abstract
A photoelectron-yield soft x-ray standing wave (SW) technique with the scanned-energy mode has been applied to the vertical height determination of the atoms of specific elements involved in an organic monolayer prepared by the Langmuir–Blodgett method on a W/C superlattice substrate (d = 30.9 Å) that serves as a SW generator. The vertical positions of two different-element atoms were determined from the SW profiles. This kind of information is complementary to the molecular-orientation estimation by the polarized x-ray absorption spectroscopy and the combination of these techniques will be a powerful tool to understand the structures of organic monolayers.
Show PACS
68.47.Pe Langmuir-Blodgett films on solids; polymers on surfaces; biological molecules on surfaces
79.60.Fr Polymers; organic compounds
78.70.Dm X-ray absorption spectra

Diameter-depended thermal expansion properties of Bi nanowire arrays

L. Li, Y. Zhang, Y. W. Yang, X. H. Huang, G. H. Li, and L. D. Zhang

Appl. Phys. Lett. 87, 031912 (2005); http://dx.doi.org/10.1063/1.2000327 (3 pages) | Cited 20 times

Online Publication Date: 14 July 2005

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The lattice parameter of bismuth nanowires has been measured using the in situ high-temperature x-ray diffraction method. Single-crystalline Bi nanowire arrays with the diameters from 10 nm to 250 nm have been fabricated within the porous anodic alumina membranes by a pulsed electrodeposition technique. Different temperature dependencies of lattice parameter and thermal expansion coefficient were found for Bi nanowires with different diameters, and there is a transition from positive thermal expansion coefficient at low temperature to negative one at high temperature, and the transition temperature shifts to high temperature with the increase in the diameter of Bi nanowires.
Show PACS
65.80.-g Thermal properties of small particles, nanocrystals, nanotubes, and other related systems
68.65.La Quantum wires (patterned in quantum wells)
81.07.Vb Quantum wires

Intraband absorption in silicon nanocrystals: The combined effect of shape and crystal orientation

J. S. de Sousa, J.-P. Leburton, V. N. Freire, and E. F. da Silva

Appl. Phys. Lett. 87, 031913 (2005); http://dx.doi.org/10.1063/1.2000336 (3 pages) | Cited 7 times

Online Publication Date: 14 July 2005

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We investigate intraband transitions in Si/SiO2 quantum dots (QD’s) by using a tridimensional quantum mechanical model that takes into account the six-valley structure of silicon. The interplay between QD orientation and shape strongly affects the infrared absorption spectra of Si QD’s. In particular, we show the orientation of the Si valleys dramatically changes the optical properties of Si QD’s.
Show PACS
78.67.Bf Nanocrystals, nanoparticles, and nanoclusters
78.67.Hc Quantum dots
78.30.Am Elemental semiconductors and insulators
68.65.Hb Quantum dots (patterned in quantum wells)
Page 1 of 3 Pages Next Page | Jump to Page
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close