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18 Jul 2005

Volume 87, Issue 3, Articles (03xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 87, 033501 (2005); http://dx.doi.org/10.1063/1.1992665 (3 pages)

Yoshihito Miyoshi, Fumito Nakajima, Junichi Motohisa, and Takashi Fukui
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Nanoscopic friction as a probe of local phase transitions

Robert Szoszkiewicz and Elisa Riedo

Appl. Phys. Lett. 87, 033105 (2005); http://dx.doi.org/10.1063/1.1995954 (3 pages) | Cited 9 times

Online Publication Date: 11 July 2005

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We study nanoscopic friction forces between an atomic force microscope tip and a glass sample. We show how and why it is possible to tune friction forces in a predictable way by changing either the sample temperature, or the humidity in the experimental chamber. We relate the friction behavior to confined water phase transitions. We find that the water gas-liquid phase diagram is the same at the macroscopic scale as at the nanoscopic tip-sample contact.
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68.35.Af Atomic scale friction
62.20.Qp Friction, tribology, and hardness
64.70.F- Liquid-vapor transitions

Reversible blue light emission from self-assembled silica nanocords

Yufeng Hao, Guowen Meng, Changhui Ye, and Lide Zhang

Appl. Phys. Lett. 87, 033106 (2005); http://dx.doi.org/10.1063/1.1996846 (3 pages) | Cited 13 times

Online Publication Date: 12 July 2005

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Self-assembled silica nanocords were synthesized through a vapor-solid process without the assistance of catalyst. The rope-like nanostructures were formed by splitting and connecting of lots of amorphous silica nanowires. Appropriate water vapor partial pressure and reaction temperature play critical roles in determining the morphologies. Blue light emission of these nanocords can dramatically be strengthened and weakened in the process of alternative dry and humid treatments. We propose that hydroxyl groups and adsorbed–desorbed ambient water on the nanocords surface are responsible for the reversible blue light emission behavior through analyzing photoluminescence and infrared spectra. Silica nanocords with such blue light emission may be used as effective optoelectronic devices and optical signal humid sensors.
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81.07.Bc Nanocrystalline materials
78.67.Bf Nanocrystals, nanoparticles, and nanoclusters
78.55.Hx Other solid inorganic materials
78.30.Hv Other nonmetallic inorganics
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
81.16.Dn Self-assembly
61.46.-w Structure of nanoscale materials

Strong polarization-dependent photoluminescence from silicon nanowire fibers

D. D. D. Ma, S. T. Lee, and J. Shinar

Appl. Phys. Lett. 87, 033107 (2005); http://dx.doi.org/10.1063/1.1996838 (3 pages) | Cited 19 times

Online Publication Date: 13 July 2005

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Fibers of highly oriented Si nanowires (SiNWs) were formed by drawing from a condensed SiNW suspension. The SiNW fiber, excited at 514.5 nm, produces a strong photoluminescence (PL) at room temperature. The PL spectrum shows three bands at 565–580, 605–640, and 680–690 nm, respectively, which are consistent with the PL of porous silicon. The relative intensity of these bands and the integrated intensity of the PL vary with the angle θ between the electric field of the polarized laser excitation and the fiber axis. The dependence on θ is attributed to the combined effects of the one-dimensional shape of the SiNW and the large dielectric contrast between the SiNW and the ambient.
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78.55.Ap Elemental semiconductors
78.67.Lt Quantum wires
81.05.Cy Elemental semiconductors
81.07.Vb Quantum wires
68.65.La Quantum wires (patterned in quantum wells)
77.22.Ch Permittivity (dielectric function)

ZnxCd1−xSe alloy nanowires covering the entire compositional range grown by metalorganic chemical vapor deposition

C. X. Shan, Z. Liu, C. M. Ng, and S. K. Hark

Appl. Phys. Lett. 87, 033108 (2005); http://dx.doi.org/10.1063/1.1997271 (3 pages) | Cited 9 times

Online Publication Date: 13 July 2005

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We show that preferentially oriented, single-crystalline ZnxCd1−xSe alloy nanowires can be grown on GaAs (100) surface using Au as a catalyst over the entire compositional range in a metalorganic chemical vapor deposition system. The composition of the alloy nanowires can be simply adjusted through the ratio of the flow rates of group-II precursors. Electron microscopy shows that the nanowires are smooth and uniform in shape; their diameters range from 20 to 80 nm and lengths exceed a few micrometers. Nanowires containing more than 13% Zn are zinc blende structured and grow along the ⟨110⟩ direction. Those containing less Zn are wurtzite structured and grow along the ⟨210⟩ direction. Compared with the bulk alloy, the change from zinc blende to wurtzite structure in nanowires occurs at far smaller x. The preferred orientation and the persistence of the zinc blende structure both reflect the influence of the substrate on the growth of the nanowires. Photoluminescence measurements identify a strong near-band-edge emission for all samples and show that its peak energy tracks the band gap of ZnxCd1−xSe epilayer for x>0.13. The growth of alloy nanowires at many compositions opens up the possibility of realizing quasi-one-dimensional heterojunctions.
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68.65.La Quantum wires (patterned in quantum wells)
78.67.Lt Quantum wires
78.55.Et II-VI semiconductors
81.05.Dz II-VI semiconductors
61.46.-w Structure of nanoscale materials
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
81.07.Vb Quantum wires

Thermal processes in metal-coated fiber probes for near-field experiments

A. Ambrosio, M. Allegrini, G. Latini, and F. Cacialli

Appl. Phys. Lett. 87, 033109 (2005); http://dx.doi.org/10.1063/1.1999019 (3 pages) | Cited 5 times

Online Publication Date: 13 July 2005

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We have used a ray optics model to calculate the optical power absorbed in the metal coating of apertured probes for scanning near-field optical microscopy. We have then introduced the absorbed power profile into the heat balance equation to calculate the temperature of the probe as a function of the distance from the apex. By comparing our results with available experimental data, we demonstrate accurate prediction of both the temperature profile along the probe, and the temperature increase per mW of power launched into the fiber (60.7 versus 60 K/mW at 25 μm from the apex).
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07.79.Fc Near-field scanning optical microscopes

Nucleation of pentacene on silicon dioxide at hyperthermal energies

Aravind S. Killampalli, Todd W. Schroeder, and James R. Engstrom

Appl. Phys. Lett. 87, 033110 (2005); http://dx.doi.org/10.1063/1.1990254 (3 pages) | Cited 12 times

Online Publication Date: 13 July 2005

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The nucleation of pentacene on silicon dioxide, incident at hyperthermal energies, has been investigated with atomic force microscopy. The incident kinetic energy of the pentacene molecules strongly influences the process of adsorption—the adsorption probability decreases with increasing incident energy, indicative of trapping-mediated adsorption. In addition, the trapping probability of pentacene decreases with more glancing angles of incidence, a result inconsistent with so-called normal energy scaling. Analysis of the dependence of the island density on the growth rate in the submonolayer regime indicates that growth at all energies is consistent with a critical cluster containing four molecules.
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81.05.Hd Other semiconductors
68.55.A- Nucleation and growth
68.55.-a Thin film structure and morphology
68.43.Mn Adsorption kinetics
68.37.Ps Atomic force microscopy (AFM)

Enhanced carrier confinement in quantum dots by raising wetting layer state energy

Sebastian Moehl, Laurent Maingault, Kuntheak Kheng, and Henri Mariette

Appl. Phys. Lett. 87, 033111 (2005); http://dx.doi.org/10.1063/1.2000335 (3 pages) | Cited 3 times

Online Publication Date: 13 July 2005

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A quantum dot design is proposed where the wetting layer states are shifted to higher energies. It is realized by including CdTe quantum dots between two thin MgTe layers. As both materials have nearly the same lattice parameter, the first MgTe layer forms a wetting layer with high carrier state energy. Consequently, the radiative regime of the dots is significantly extended to higher temperatures. The unusual temperature-dependence of the decay time is discussed using a model for localized and delocalized states.
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73.21.La Quantum dots
73.20.Jc Delocalization processes

Memory effect of Al-rich AlN films synthesized with rf magnetron sputtering

Y. Liu, T. P. Chen, P. Zhao, S. Zhang, S. Fung, and Y. Q. Fu

Appl. Phys. Lett. 87, 033112 (2005); http://dx.doi.org/10.1063/1.2000337 (3 pages) | Cited 11 times

Online Publication Date: 13 July 2005

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Al-rich AlN thin film, which is deposited onto n-type Si substrate by radio frequency sputtering of Al target in an argon and N2 gas mixture, can exhibit a large memory effect as a result of charge trapping in the Al nanoparticles/nanoclusters embedded in the AlN matrix. For the metal-insulator-semiconductor structure with a 60 nm Al-rich AlN thin film, a voltage of −15 V applied to the metal electrode for 10−6 s causes a flatband voltage shift of ∼ 1.5 V. Both electron trapping and hole trapping are possible, depending on the polarity of the applied voltage. In addition, whether the electron trapping or the hole trapping is the dominant process also depends on the charging time and the magnitude of the voltage. The Al-rich AlN thin films provide the possibility of memory applications with low cost.
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81.05.Ea III-V semiconductors
73.61.Ey III-V semiconductors
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
68.55.A- Nucleation and growth
81.15.Cd Deposition by sputtering

Highly ordered self-organized dot patterns on Si surfaces by low-energy ion-beam erosion

B. Ziberi, F. Frost, B. Rauschenbach, and Th. Höche

Appl. Phys. Lett. 87, 033113 (2005); http://dx.doi.org/10.1063/1.2000342 (3 pages) | Cited 10 times

Online Publication Date: 13 July 2005

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Scanning force microscopy (AFM) and high-resolution transmission electron microscopy (HRTEM) have been used to investigate the complex topography evolution of Si surfaces during low-energy ion beam erosion. Depending on ion-beam parameters, a variety of different topographies can develop on the surface. At oblique ion-incidence angles, nanodots are formed for ion energies ≥ 300 eV upon sample rotation. Properly chosen parameters of the broad-beam ion source result in dots possessing a very high degree of lateral ordering with a mean dot size λ ∼ 30 nm. Both, degree of ordering and size homogeneity of these nanostructures increases with erosion time leading to the most ordered self-organized patterns on Si surfaces reported thus far.
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81.07.Ta Quantum dots
81.16.Dn Self-assembly
81.65.Cf Surface cleaning, etching, patterning
61.82.Fk Semiconductors

Anomalous electrorheological behavior of ZnO nanowires

P. Feng, Q. Wan, X. Q. Fu, T. H. Wang, and Y. Tian

Appl. Phys. Lett. 87, 033114 (2005); http://dx.doi.org/10.1063/1.1999848 (3 pages) | Cited 10 times

Online Publication Date: 14 July 2005

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We observe an anomalous electrorheological (ER) behavior of suspensions composed of ZnO nanowires and silicone oil. In contrast to the usual ER behavior, a decrease in viscosity of the suspensions is observed. Such an anomalous behavior results from the migration of ZnO nanowires to the electrodes under a dc electric field. The migration leads to a relatively pure silicone oil zone between the electrodes, as confirmed by optical microscope observations. The occurrence of the electrophoresis is proposed as the origin of the decrease in shear stress.
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83.80.Gv Electro- and magnetorheological fluids
82.70.Kj Emulsions and suspensions
83.80.Hj Suspensions, dispersions, pastes, slurries, colloids
82.45.-h Electrochemistry and electrophoresis

Self-alignment of Fe nanoparticles on a tunnel barrier

F. Ernult, S. Mitani, K. Takanashi, Y. K. Takahashi, K. Hono, Y. Takahashi, and E. Matsubara

Appl. Phys. Lett. 87, 033115 (2005); http://dx.doi.org/10.1063/1.2000339 (3 pages) | Cited 5 times

Online Publication Date: 14 July 2005

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Nanometric metallic particles were prepared on top of a thin epitaxial oxide layer. Samples with the following structure: Fe electrode/MgO/Fe particles were fabricated and the arrangement of the Fe particles could be tuned from random to self-aligned by simply varying the thickness of the Fe electrode. Under appropriate deposition conditions, the particles were found to be self-aligned along the ⟨110⟩ directions of the underlying Fe electrode. Scanning tunneling microscope (STM) showed that their mean diameter and size distribution were then significantly reduced compared to randomly organized particles. Transmission electron microscope (TEM) images indicated that the self-alignment process originates from the strain relaxation of the Fe electrode which favors faceting of its surface and the formation of pyramidal structures. These self-aligned particles may be straightly used for applications based on a thin oxide tunnel barrier such as single-electron tunneling devices.
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81.07.Bc Nanocrystalline materials
81.16.Dn Self-assembly
68.35.B- Structure of clean surfaces (and surface reconstruction)
61.46.-w Structure of nanoscale materials
81.40.Jj Elasticity and anelasticity, stress-strain relations
62.40.+i Anelasticity, internal friction, stress relaxation, and mechanical resonances
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.37.Lp Transmission electron microscopy (TEM)
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A 1 bit binary-decision-diagram adder circuit using single-electron transistors made by selective-area metalorganic vapor-phase epitaxy

Yoshihito Miyoshi, Fumito Nakajima, Junichi Motohisa, and Takashi Fukui

Appl. Phys. Lett. 87, 033501 (2005); http://dx.doi.org/10.1063/1.1992665 (3 pages) | Cited 3 times

Online Publication Date: 12 July 2005

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We demonstrate single-electron operation of a 1 bit adder circuit using GaAs single-electron tunneling transistors (SETs). GaAs dot and wire coupled structures for the fabrication of SETs were grown by a selective-area metalorganic vapor-phase epitaxy technique. The logic circuit was realized based on a binary decision diagram architecture using Coulomb blockade (CB) in GaAs dots and switching operations were achieved in a single-electron mode because of the CB effects. Through this architecture, a 1 bit adder circuit was realized with three SETs, two of which were for AND logic and one with two input gates for exclusive OR (XOR). Both AND and XOR operations were demonstrated at 1.9 K, which indicated successful fabrication of the 1 bit adder.
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84.30.Sk Pulse and digital circuits
85.35.Ds Quantum interference devices
85.35.Gv Single electron devices
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
85.40.Sz Deposition technology

Free-standing epitaxial La1−x(Sr,Ca)xMnO3 membrane on Si for uncooled infrared microbolometer

J.-H. Kim and A. M. Grishin

Appl. Phys. Lett. 87, 033502 (2005); http://dx.doi.org/10.1063/1.1996845 (3 pages) | Cited 9 times

Online Publication Date: 13 July 2005

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Ar ion beam etching and inductively coupled SF6 and C4F8 plasma-etching processes have been employed to fabricate free standing membrane from the heteroepitaxial La1−x(Sr,Ca)xMnO3(50 nm)/Bi4Ti3O12(100 nm)/CeO2(40 nm)/YSZ(30 nm) film structure pulsed laser deposited on Si(001) wafer. We demonstrate feasibility to use epitaxial colossal magnetoresistive manganite film as thermally isolated self-supporting membrane for uncooled infrared microbolometer applications.
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81.65.Cf Surface cleaning, etching, patterning
81.15.Fg Pulsed laser ablation deposition
68.55.A- Nucleation and growth
75.47.Gk Colossal magnetoresistance
75.47.Lx Magnetic oxides
75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)
52.77.Bn Etching and cleaning

Investigation of the electrical activity of partial dislocations in SiC p-i-n diodes

Serguei I. Maximenko, Pirouz Pirouz, and Tangali S. Sudarshan

Appl. Phys. Lett. 87, 033503 (2005); http://dx.doi.org/10.1063/1.1999297 (3 pages) | Cited 6 times

Online Publication Date: 14 July 2005

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The electron-beam-induced current (EBIC) mode of scanning electron microscopy was employed to investigate the nucleation and development of stacking faults (SFs) during forward high current stress operation of 4H–SiC p-i-n diodes. The EBIC technique is shown to be a valuable tool for the visualization and analysis of mobile and immobile partial dislocations bounding the SFs and their recombination activity. Both Si and C core partial dislocations exhibit similar EBIC contrast. It is shown that threading edge dislocations can be one source of SF generation leading to the degradation of p-i-n diodes.
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85.30.Kk Junction diodes

Gigahertz-range electro-acoustic devices based on pseudo-surface-acoustic waves in AlN/diamond/Si structures

M. Benetti, D. Cannatà, F. Di Pietrantonio, V. I. Fedosov, and E. Verona

Appl. Phys. Lett. 87, 033504 (2005); http://dx.doi.org/10.1063/1.1999841 (3 pages) | Cited 5 times

Online Publication Date: 14 July 2005

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Diamond and AlN are, respectively, the nonpiezoelectric and the piezoelectric materials showing the highest acoustic velocities. Consequently, pseudo-surface-acoustic waves (PSAWs) in AlN/diamond structures exhibit the highest surface wave velocities among all known layered structures. Phase velocity dispersion curves and attenuation for PSAW propagating along this structure have been calculated for different electrical boundary conditions. An experimental delay line, designed to operate at low PSAW attenuation conditions, as predicted by theoretical results, has been implemented and tested. A good accordance between experimental results and theoretical predictions was found. It is expected that devices based on PSAW propagation in AlN/diamond structures are suitable to operate at frequencies several times higher than those of available devices, at a given linewidth resolution limit in the transducers technology.
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62.65.+k Acoustical properties of solids
85.50.-n Dielectric, ferroelectric, and piezoelectric devices
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
77.65.Dq Acoustoelectric effects and surface acoustic waves (SAW) in piezoelectrics
68.35.Iv Acoustical properties
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Single-molecule DNA flexibility in the presence of base-pair mismatch

Kathryn A. Schallhorn, Katherine O. Freedman, Jessica M. Moore, Jun Lin, and Pu Chun Ke

Appl. Phys. Lett. 87, 033901 (2005); http://dx.doi.org/10.1063/1.1997279 (3 pages) | Cited 8 times

Online Publication Date: 14 July 2005

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The conformational changes of a 22 base-pair double-stranded DNA, anchored via one end to a quartz substrate, have been characterized using a single-pair fluorescence resonance energy transfer technique. Base-pair mismatch, a major form of DNA damage, has been found to decrease the energy transfer between a fluorescence donor and an acceptor attached to the two ends of DNA molecules with 3 and 7 mismatches, by 4.4% and 10.4%, respectively, as compared to that for perfectly matched DNA. This result suggests that the disruption of the hydrogen bonds in damaged DNA leads to increased contour length and improved flexibility.
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87.15.H- Dynamics of biomolecules
87.15.B- Structure of biomolecules
87.15.M- Spectra of biomolecules
87.14.G- Nucleic acids
33.50.Dq Fluorescence and phosphorescence spectra
36.20.Hb Configuration (bonds, dimensions)
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True atomic resolution in liquid by frequency-modulation atomic force microscopy

Takeshi Fukuma, Kei Kobayashi, Kazumi Matsushige, and Hirofumi Yamada

Appl. Phys. Lett. 87, 034101 (2005); http://dx.doi.org/10.1063/1.1999856 (3 pages) | Cited 83 times

Online Publication Date: 12 July 2005

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True atomic resolution of frequency-modulation atomic force microscopy in liquid is demonstrated. Hexagonal lattice of a cleaved (001) surface of muscovite mica is resolved in water. Nonperiodic structures such as defects and adsorbates are simultaneously imaged with the atomic-scale features of mica surface. The use of small oscillation amplitude (0.16–0.33 nm) of a force sensing cantilever allows us to obtain vertical and lateral resolutions of 2–6 and 300 pm, respectively, even with a low Q factor in water (Q = 20–30).
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91.30.Bi Seismic sources (mechanisms, magnitude, moment frequency spectrum)
07.79.Lh Atomic force microscopes

Superconducting metamaterials

Michael Ricci, Nathan Orloff, and Steven M. Anlage

Appl. Phys. Lett. 87, 034102 (2005); http://dx.doi.org/10.1063/1.1996844 (3 pages) | Cited 42 times

Online Publication Date: 13 July 2005

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Evanescent wave amplification has been predicted under the ideal condition that the index of refraction, n = −1+i0 precisely, but is difficult to observe in practice because current metamaterials suffer from high losses. We present experimental results on a metamaterial that employs superconducting Nb metals and low-loss dielectric materials. Results include transmission data on a wire, split-ring resonator, and a combination medium at temperatures between 4.2 and 297 K. Evidence of negative effective permittivity, permeability, and a negative effective index passband are seen in the superconducting state between 50 MHz and 18 GHz. We find a dielectric loss of εeff,2 = 2.6×10−3 in a superconducting wire array at 10.75 GHz.
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42.70.-a Optical materials
42.25.Gy Edge and boundary effects; reflection and refraction
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
74.70.Ad Metals; alloys and binary compounds (including A15, MgB2, etc.)
77.22.Ch Permittivity (dielectric function)
77.22.Gm Dielectric loss and relaxation

Controllable generation of highly stripped ions with different charges by nanosecond laser ionization of clusters at different wavelengths

Dongmei Niu, Haiyang Li, Feng Liang, Xiaolin Luo, and Lihua Wen

Appl. Phys. Lett. 87, 034103 (2005); http://dx.doi.org/10.1063/1.1997281 (3 pages) | Cited 5 times

Online Publication Date: 13 July 2005

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We report an effective method to selectively produce highly charged ions by photoionization of cluster beams using commercial nanosecond Nd:yttrium–aluminum–garnet lasers at different wavelengths. He-like ions of C4+, N5+, O6+, S6+ and highly charged Xeq+ (q ∼ 19) ions are produced when cluster beams of benzene, ammonia, acetone, hydrogen sulfide, and xenon are irradiated, respectively, by 1064 nm laser with intensity of ∼ 1011 W/cm2. While the cluster beams are irradiated by 532 nm laser of similar intensity, the ions of the highest charge state switch to C3+, N3+, O3+, S4+ and Xe11+, respectively.
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32.80.Fb Photoionization of atoms and ions
36.40.-c Atomic and molecular clusters
42.65.Re Ultrafast processes; optical pulse generation and pulse compression

Three-dimensional imaging of individual hafnium atoms inside a semiconductor device

Klaus van Benthem, Andrew R. Lupini, Miyoung Kim, Hion Suck Baik, SeokJoo Doh, Jong-Ho Lee, Mark P. Oxley, Scott D. Findlay, Leslie J. Allen, Julia T. Luck, and Stephen J. Pennycook

Appl. Phys. Lett. 87, 034104 (2005); http://dx.doi.org/10.1063/1.1991989 (3 pages) | Cited 86 times

Online Publication Date: 14 July 2005

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The aberration-corrected scanning transmission electron microscope allows probes to be formed with less than 1-Å diameter, providing sufficient sensitivity to observe individual Hf atoms within the SiO2 passivating layer of a HfO2/SiO2/Si alternative gate dielectric stack. Furthermore, the depth resolution is sufficient to localize the atom positions to half-nanometer precision in the third dimension. From a through-focal series of images, we demonstrate a three-dimensional reconstruction of the Hf atom sites, representing a three-dimensional map of potential breakdown sites within the gate dielectric.
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68.37.Lp Transmission electron microscopy (TEM)
85.30.De Semiconductor-device characterization, design, and modeling
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
77.22.Jp Dielectric breakdown and space-charge effects
61.46.-w Structure of nanoscale materials
81.07.Bc Nanocrystalline materials
68.35.Ct Interface structure and roughness

Investigation of inflammable liquids by terahertz spectroscopy

Takeshi Ikeda, Akira Matsushita, Michiaki Tatsuno, Yukio Minami, Mariko Yamaguchi, Kohji Yamamoto, Masahiko Tani, and Masanori Hangyo

Appl. Phys. Lett. 87, 034105 (2005); http://dx.doi.org/10.1063/1.1999847 (3 pages) | Cited 23 times

Online Publication Date: 14 July 2005

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We have examined a nondestructive and contactless screening method for water and inflammable liquids stored in common beverage plastic bottles by the terahertz time-domain spectroscopy. No THz transmission has been observed between 10 and 60 cm−1 for 45-mm-thick water in plastic bottles. Part of the THz wave, on the other hand, has been transmitted through the commercially available inflammable liquids in the same bottles. The differences in the absorption intensities and the refractive indices in the THz region, which reflect the ingredients of organic compounds, allow us to distinguish these inflammable liquids. We confirm that the screening method based on the THz transmission can be applied to classifying the commercially available inflammable liquids stored in plastic bottles and to distinguishing these inflammable liquids from water as well.
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78.70.Gq Microwave and radio-frequency interactions
81.70.Fy Nondestructive testing: optical methods
82.33.Vx Reactions in flames, combustion, and explosions

Multi-channel homodyne detection of continuous-wave terahertz radiation

I. S. Gregory, W. R. Tribe, M. J. Evans, T. D. Drysdale, D. R. S. Cumming, and M. Missous

Appl. Phys. Lett. 87, 034106 (2005); http://dx.doi.org/10.1063/1.1990249 (3 pages) | Cited 4 times

Online Publication Date: 15 July 2005

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We demonstrate the principle of multichannel spectral data capture using an all-optoelectronic terahertz photomixing system. Two independent laser diodes, each emitting in multiple longitudinal modes, are used to generate and detect over ten terahertz frequencies simultaneously. The spectral composition can be altered by tuning the lasers, and filtering is achieved through the use of resonant antennas and tunable photonic crystal filters. Potential applications include gas phase spectroscopy and explosives detection.
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84.40.-x Radiowave and microwave (including millimeter wave) technology
85.60.-q Optoelectronic devices
42.55.Px Semiconductor lasers; laser diodes
42.60.Fc Modulation, tuning, and mode locking
42.79.Ci Filters, zone plates, and polarizers
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Addendum: “Looking 100 Å deep into spatially inhomogeneous dilute systems with hard X-ray photoemission” [ Appl. Phys. Lett. 85, 4532 (2004) ]

C. Dallera, L. Duò, L. Braicovich, G. Panaccione, G. Paolicelli, B. Cowie, and J. Zegenhagen

Appl. Phys. Lett. 87, 039901 (2005); http://dx.doi.org/10.1063/1.1996837 (1 page)

Online Publication Date: 12 July 2005

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01.30.-y Physics literature and publications
79.60.Bm Clean metal, semiconductor, and insulator surfaces
FREE

Erratum: “Aging effect and origin of deep-level emission in ZnO thin film deposited by pulsed laser deposition” [ Appl. Phys. Lett. 86, 221910 (2005) ]

F. K. Shan, G. X. Liu, W. J. Lee, G. H. Lee, I. S. Kim, and B. C. Shin

Appl. Phys. Lett. 87, 039902 (2005); http://dx.doi.org/10.1063/1.1978974 (1 page)

Online Publication Date: 13 July 2005

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99.10.Cd Errata
81.05.Dz II-VI semiconductors
78.66.Hf II-VI semiconductors
78.55.Et II-VI semiconductors
81.40.Cd Solid solution hardening, precipitation hardening, and dispersion hardening; aging
68.37.Ps Atomic force microscopy (AFM)
71.55.Gs II-VI semiconductors
61.72.Cc Kinetics of defect formation and annealing
68.35.B- Structure of clean surfaces (and surface reconstruction)
61.72.J- Point defects and defect clusters
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Erratum: “Preparation of highly conductive Mn-doped Fe3O4 thin films with spin polarization at room temperature using a pulsed-laser deposition technique” [ Appl. Phys. Lett. 86, 222504 (2005) ]

Mizue Ishikawa, Hidekazu Tanaka, and Tomoji Kawai

Appl. Phys. Lett. 87, 039903 (2005); http://dx.doi.org/10.1063/1.2000346 (1 page)

Online Publication Date: 13 July 2005

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99.10.Cd Errata
75.50.Dd Nonmetallic ferromagnetic materials
75.70.Ak Magnetic properties of monolayers and thin films
81.15.Fg Pulsed laser ablation deposition
68.55.A- Nucleation and growth
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