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18 Jul 2005

Volume 87, Issue 3, Articles (03xxxx)

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Appl. Phys. Lett. 87, 033501 (2005); http://dx.doi.org/10.1063/1.1992665 (3 pages)

Yoshihito Miyoshi, Fumito Nakajima, Junichi Motohisa, and Takashi Fukui
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A 1 bit binary-decision-diagram adder circuit using single-electron transistors made by selective-area metalorganic vapor-phase epitaxy

Yoshihito Miyoshi, Fumito Nakajima, Junichi Motohisa, and Takashi Fukui

Appl. Phys. Lett. 87, 033501 (2005); http://dx.doi.org/10.1063/1.1992665 (3 pages) | Cited 3 times

Online Publication Date: 12 July 2005

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We demonstrate single-electron operation of a 1 bit adder circuit using GaAs single-electron tunneling transistors (SETs). GaAs dot and wire coupled structures for the fabrication of SETs were grown by a selective-area metalorganic vapor-phase epitaxy technique. The logic circuit was realized based on a binary decision diagram architecture using Coulomb blockade (CB) in GaAs dots and switching operations were achieved in a single-electron mode because of the CB effects. Through this architecture, a 1 bit adder circuit was realized with three SETs, two of which were for AND logic and one with two input gates for exclusive OR (XOR). Both AND and XOR operations were demonstrated at 1.9 K, which indicated successful fabrication of the 1 bit adder.
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84.30.Sk Pulse and digital circuits
85.35.Ds Quantum interference devices
85.35.Gv Single electron devices
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
85.40.Sz Deposition technology

Free-standing epitaxial La1−x(Sr,Ca)xMnO3 membrane on Si for uncooled infrared microbolometer

J.-H. Kim and A. M. Grishin

Appl. Phys. Lett. 87, 033502 (2005); http://dx.doi.org/10.1063/1.1996845 (3 pages) | Cited 9 times

Online Publication Date: 13 July 2005

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Ar ion beam etching and inductively coupled SF6 and C4F8 plasma-etching processes have been employed to fabricate free standing membrane from the heteroepitaxial La1−x(Sr,Ca)xMnO3(50 nm)/Bi4Ti3O12(100 nm)/CeO2(40 nm)/YSZ(30 nm) film structure pulsed laser deposited on Si(001) wafer. We demonstrate feasibility to use epitaxial colossal magnetoresistive manganite film as thermally isolated self-supporting membrane for uncooled infrared microbolometer applications.
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81.65.Cf Surface cleaning, etching, patterning
81.15.Fg Pulsed laser ablation deposition
68.55.A- Nucleation and growth
75.47.Gk Colossal magnetoresistance
75.47.Lx Magnetic oxides
75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)
52.77.Bn Etching and cleaning

Investigation of the electrical activity of partial dislocations in SiC p-i-n diodes

Serguei I. Maximenko, Pirouz Pirouz, and Tangali S. Sudarshan

Appl. Phys. Lett. 87, 033503 (2005); http://dx.doi.org/10.1063/1.1999297 (3 pages) | Cited 6 times

Online Publication Date: 14 July 2005

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The electron-beam-induced current (EBIC) mode of scanning electron microscopy was employed to investigate the nucleation and development of stacking faults (SFs) during forward high current stress operation of 4H–SiC p-i-n diodes. The EBIC technique is shown to be a valuable tool for the visualization and analysis of mobile and immobile partial dislocations bounding the SFs and their recombination activity. Both Si and C core partial dislocations exhibit similar EBIC contrast. It is shown that threading edge dislocations can be one source of SF generation leading to the degradation of p-i-n diodes.
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85.30.Kk Junction diodes

Gigahertz-range electro-acoustic devices based on pseudo-surface-acoustic waves in AlN/diamond/Si structures

M. Benetti, D. Cannatà, F. Di Pietrantonio, V. I. Fedosov, and E. Verona

Appl. Phys. Lett. 87, 033504 (2005); http://dx.doi.org/10.1063/1.1999841 (3 pages) | Cited 5 times

Online Publication Date: 14 July 2005

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Diamond and AlN are, respectively, the nonpiezoelectric and the piezoelectric materials showing the highest acoustic velocities. Consequently, pseudo-surface-acoustic waves (PSAWs) in AlN/diamond structures exhibit the highest surface wave velocities among all known layered structures. Phase velocity dispersion curves and attenuation for PSAW propagating along this structure have been calculated for different electrical boundary conditions. An experimental delay line, designed to operate at low PSAW attenuation conditions, as predicted by theoretical results, has been implemented and tested. A good accordance between experimental results and theoretical predictions was found. It is expected that devices based on PSAW propagation in AlN/diamond structures are suitable to operate at frequencies several times higher than those of available devices, at a given linewidth resolution limit in the transducers technology.
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62.65.+k Acoustical properties of solids
85.50.-n Dielectric, ferroelectric, and piezoelectric devices
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
77.65.Dq Acoustoelectric effects and surface acoustic waves (SAW) in piezoelectrics
68.35.Iv Acoustical properties
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