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18 Jul 2005

Volume 87, Issue 3, Articles (03xxxx)

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Appl. Phys. Lett. 87, 033501 (2005); http://dx.doi.org/10.1063/1.1992665 (3 pages)

Yoshihito Miyoshi, Fumito Nakajima, Junichi Motohisa, and Takashi Fukui
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Low-temperature phase of SrTiO3

A. Levstik, C. Filipič, R. Pirc, V. Bobnar, R. Blinc, and M. Itoh

Appl. Phys. Lett. 87, 032901 (2005); http://dx.doi.org/10.1063/1.1999017 (3 pages) | Cited 2 times

Online Publication Date: 13 July 2005

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The linear and nonlinear dielectric properties of SrTiO3 (STO16) and SrTimath (STO18) are described by an order-disorder component represented by the spherical random-bond-random-field model, up until now applied only to relaxor ferroelectrics. It is shown that, due to the contribution of domain walls, the dielectric response of STO18 below Tc increases with increasing the measuring field. As similar behavior is observed in STO16 also and, furthermore, the field-cooled-zero-field-heated polarization is different from zero below 55 K, the high values of the linear dielectric constant in the low-temperature phase of STO16 are ascribed to the dynamic response of the polar clusters.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.22.Ch Permittivity (dielectric function)
77.22.Ej Polarization and depolarization
77.80.Dj Domain structure; hysteresis

CaCu3Ti4O12/CaTiO3 composite dielectrics: Ba/Pb-free dielectric ceramics with high dielectric constants

W. Kobayashi and I. Terasaki

Appl. Phys. Lett. 87, 032902 (2005); http://dx.doi.org/10.1063/1.1997278 (3 pages) | Cited 31 times

Online Publication Date: 15 July 2005

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We have measured dielectric properties of Ca1+xCu3−xTi4O12 (x = 0, 0.1, 0.5, 1, 1.5, 2, 2.9 and 3), and have found that Ca2Cu2Ti4O12 (a composite of CaCu3Ti4O12 and CaTiO3) exhibits a high dielectric constant of 1800 with a low dissipation factor of 0.02 below 100 kHz from 220 to 300 K. These are comparable to (or even better than) those of the Pb/Ba-based ceramics, which could be attributed to a barrier layer of CaTiO3 on the surface of the CaCu3Ti4O12 grains. The composite dielectric ceramics reported here are environmentally benign as they do not contain Ba/Pb.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
84.32.Tt Capacitors
77.22.Ch Permittivity (dielectric function)

Effect of annealing on leakage current in Ba0.5Sr0.5TiO3 and Ba0.96Ca0.04Ti0.84Zr0.16O3 thin films with Pt electrodes

N. Cramer, Ali Mahmud, and T. S. Kalkur

Appl. Phys. Lett. 87, 032903 (2005); http://dx.doi.org/10.1063/1.1990250 (3 pages) | Cited 9 times

Online Publication Date: 15 July 2005

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Ba0.96Ca0.04Ti0.84Zr0.16O3 (BCTZ) and Ba0.5Sr0.5TiO3 (BST) thin films were deposited at a substrate temperature of 450 °C via rf magnetron sputtering to form Pt/BCTZ/Pt and Pt/BST/Pt capacitors. BCTZ thin films hold promise as an alternative to BST in capacitor applications due to the resistance of BCTZ to reducing atmospheres. In order to produce BST films with low dc leakage current, oxygen is routinely used during film growth and often afterwards during anneals. The effect of postannealing the capacitors in either forming gas or oxygen at temperatures up to 700 °C (BST) and 800 °C (BCTZ) were studied. The leakage mechanism is shown to be dominated by Schottky emission and the Schottky barrier height is reported as a function of anneal gas composition and anneal temperature.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.55.-g Dielectric thin films
84.32.Tt Capacitors
73.30.+y Surface double layers, Schottky barriers, and work functions
61.72.Cc Kinetics of defect formation and annealing
81.15.Cd Deposition by sputtering
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