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1 Aug 2005

Volume 87, Issue 5, Articles (05xxxx)

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Appl. Phys. Lett. 87, 054101 (2005); http://dx.doi.org/10.1063/1.2006209 (3 pages)

Xiuqin Chen, S. Yang, M Hasegawa, K. Kawabe, and S. Motojima
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Atomic-layer-deposited Al2O3–HfO2–Al2O3 dielectrics for metal-insulator-metal capacitor applications

Shi-Jin Ding, Chunxiang Zhu, Ming-Fu Li, and David Wei Zhang

Appl. Phys. Lett. 87, 053501 (2005); http://dx.doi.org/10.1063/1.2005397 (3 pages) | Cited 10 times

Online Publication Date: 25 July 2005

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Atomic-layer-deposited Al2O3–HfO2–Al2O3 dielectrics have been investigated to replace conventional silicon oxide and nitride for radio frequency and analog metal-insulator-metal capacitors applications. In the case of 1‐nm‐Al2O3, sufficiently good electrical performances are achieved, including a high dielectric constant of ∼ 17, a small dissipation factor of 0.018 at 100 kHz, an extremely low leakage current of 7.8×10−9 A/cm2 at 1 MV/cm and 125 ° C, perfect voltage coefficients of capacitance (74 ppm/V2 and 10 ppm/V). The quadratic voltage coefficient of capacitance decreases with the applied frequency due to the change of relaxation time with different carrier mobility in insulator, and correlates with the dielectric composition and thickness, which is of intrinsic property owing to electric field polarization. Furthermore, the conduction mechanism of the AHA dielectrics is also discussed, indicating the Schottky emission dominated at room temperature.
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77.55.-g Dielectric thin films
84.32.Tt Capacitors
73.40.Rw Metal-insulator-metal structures
77.22.Ch Permittivity (dielectric function)

Magnetotransport and rectifying properties in La0.67Ca0.33MnO3/yttrium-stabilized zirconia/Si heterojunction

P. L. Lang, Y. G. Zhao, B. Yang, X. L. Zhang, J. Li, P. Wang, and D. N. Zheng

Appl. Phys. Lett. 87, 053502 (2005); http://dx.doi.org/10.1063/1.2006980 (3 pages) | Cited 25 times

Online Publication Date: 25 July 2005

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A heterojunction has been fabricated by growing a La0.67Ca0.33MnO3 film on silicon with a buffer layer of yttrium-stabilized zirconia (YSZ). The current-voltage measurement shows that it is a diode with a good rectifying property. At low positive bias voltage, temperature dependence of the junction resistance shows a peak at a certain temperature, which shifts to low temperatures when the voltage is increased from 0.3 V to 0.7 V. This behavior is quite different from the previous reports on p-n junctions composed of manganites and Nb-doped SrTiO3. The heterojunction shows remarkable magnetoresistance for both positive and negative biases. The results were discussed by considering the depletion layers in both La0.67Ca0.33MnO3 and Si, and the tunneling through YSZ. This work shows the potential application of integrating manganite-based devices and semiconductor circuits.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.40.Ei Rectification
75.47.Lx Magnetic oxides
75.47.Gk Colossal magnetoresistance
73.40.Gk Tunneling

Growth and characterization of GaN PiN rectifiers on free-standing GaN

X. A. Cao, H. Lu, S. F. LeBoeuf, C. Cowen, S. D. Arthur, and W. Wang

Appl. Phys. Lett. 87, 053503 (2005); http://dx.doi.org/10.1063/1.2001738 (3 pages) | Cited 12 times

Online Publication Date: 26 July 2005

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GaN PiN rectifiers with high structural quality were grown on free-standing GaN substrates using metalorganic chemical vapor deposition. The lattice mismatch between the substrate and the epitaxial GaN was found to be ∼ 1×10−4. The full width at half maximum of the (0002) rocking curve was 79 arcs compared to 230 arcs for similar materials grown on sapphire. The incorporation of C, H, and O impurities in the homoepitaxial drift layer was reduced by a factor of 2–4. The rectifiers on GaN demonstrated rectification to −265 V, which represents a 1.6× improvement over the rectifiers on sapphire and corresponds to a critical electric field ∼ 2.7 MV/cm. The homoepitaxial rectifiers also showed two orders of magnitude lower reverse leakage and a smaller negative temperature coefficient for breakdown voltage, consistent with a reduced defect density in the drift region.
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84.30.Jc Power electronics; power supply circuits
81.05.Ea III-V semiconductors
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.15.Kk Vapor phase epitaxy; growth from vapor phase
61.72.uj III-V and II-VI semiconductors

Physical mechanism of oxide interfacial traps, carrier mobility degradation and series resistance on contrast reversal in scanning-capacitance-microscopy dopant concentration extraction

K. M. Wong, W. K. Chim, and J. Yan

Appl. Phys. Lett. 87, 053504 (2005); http://dx.doi.org/10.1063/1.2006979 (3 pages) | Cited 2 times

Online Publication Date: 27 July 2005

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In this letter, the contrast reversal effect in scanning-capacitance-microscopy (SCM) dopant concentration extraction is investigated both theoretically and experimentally. The shift of the turning point in the nonmonotonic response of peak dC/dV signal versus dopant concentration to higher dopant concentrations is explained by the difference of the capture/emission time constant of the interface states and the series resistance of the semiconductor sample. This is verified by comparing the experimental SCM measurements with the simulated peak dC/dV profile on a p-type multiple dopant step sample. The contrast reversal effect, which affects the accuracy of dopant concentration extraction using the SCM peak dC/dV signal, can be minimized by using an overlying oxide with good interfacial quality and a semiconductor sample of low series resistance.
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81.05.Cy Elemental semiconductors
72.20.Fr Low-field transport and mobility; piezoresistance
61.72.uf Ge and Si
61.72.S- Impurities in crystals
73.20.-r Electron states at surfaces and interfaces
72.80.Cw Elemental semiconductors

Influence of surface stress on the resonance behavior of microcantilevers

Andrew W. McFarland, Mark A. Poggi, Margaret J. Doyle, Lawrence A. Bottomley, and Jonathan S. Colton

Appl. Phys. Lett. 87, 053505 (2005); http://dx.doi.org/10.1063/1.2006212 (3 pages) | Cited 40 times

Online Publication Date: 28 July 2005

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This work presents a model to predict the effect of surface stresses on the ith-mode bending resonant frequency of microcantilevers and its experimental validation. With this model, one can calculate the surface stress acting upon the microcantilever solely by measuring resonant frequencies whereas previously one needed to measure the deflection. Resonant frequency measurement has distinct advantages in terms of ease and accuracy of measurement.
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07.10.Cm Micromechanical devices and systems
46.70.De Beams, plates, and shells
07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
46.32.+x Static buckling and instability
46.35.+z Viscoelasticity, plasticity, viscoplasticity

math polarization via optical pumping in a birefringent cell

Y. Masuda, T. Ino, V. R. Skoy, and G. L. Jones

Appl. Phys. Lett. 87, 053506 (2005); http://dx.doi.org/10.1063/1.2008370 (3 pages) | Cited 3 times

Online Publication Date: 28 July 2005

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A sapphire cell was used to obtain a high math nuclear polarization by means of spin-exchange optical pumping. The phase-shift difference between ordinary and extraordinary rays is well controlled using the thickness of the birefringent sapphire window so that a high circular polarization is obtained in the cell. Neutron transmission through the polarized math gas was measured as a function of neutron energy. A large math polarization of 63±1% was obtained at a math pressure of 3.1 atm. Neutron polarizations of 97 and 90 % were obtained with transmission rates of 15 and 22 % at 10 and 20 meV, respectively.
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32.80.Xx Level crossing and optical pumping

Ballistic and pocket limitations of mobility in nanometer Si metal-oxide semiconductor field-effect transistors

J. Łusakowski, W. Knap, Y. Meziani, J.-P. Cesso, A. El Fatimy, R. Tauk, N. Dyakonova, G. Ghibaudo, F. Boeuf, and T. Skotnicki

Appl. Phys. Lett. 87, 053507 (2005); http://dx.doi.org/10.1063/1.1993747 (3 pages) | Cited 17 times

Online Publication Date: 29 July 2005

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Room-temperature magnetoresistance of nanometer bulk Si n-type metal-oxide semiconductor field-effect transistors was measured at magnetic fields up to 10 T. The electron magnetoresistance mobility was determined for transistors with the gate length in 30 to 740 nm range and was shown to decrease with decreasing the gate length. We show that the mobility reduction is caused both by the ballistic and the pocket effect and that for the strong inversion these two effects are of a comparable magnitude.
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85.30.Tv Field effect devices
73.23.Ad Ballistic transport
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