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8 Aug 2005

Volume 87, Issue 6, Articles (06xxxx)

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Appl. Phys. Lett. 87, 061103 (2005); http://dx.doi.org/10.1063/1.2008357 (3 pages)

Y. C. Zhong, S. A. Zhu, H. M. Su, H. Z. Wang, J. M. Chen, Z. H. Zeng, and Y. L. Chen
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Direct observation of a fully strained dead layer at Ba0.7Sr0.3TiO3/SrRuO3 interface

J. Q. He, E. Vasco, C. L. Jia, and R. H. Wang

Appl. Phys. Lett. 87, 062901 (2005); http://dx.doi.org/10.1063/1.2008372 (3 pages) | Cited 19 times

Online Publication Date: 3 August 2005

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Epitaxial SrRuO3/Ba0.7Sr0.3TiO3 (BST)/SrRuO3 thin film capacitors were prepared on SrTiO3 substrates by pulsed laser deposition. The structures of stacked BST films with different thicknesses were investigated by transmission electron microscopy. A distinctive layer of about 3 nm of thickness was identified within BST films thicker than 9 nm at the interface with the SrRuO3 bottom electrode. The distinctive layer is misfit dislocation-free showing pseudoconstant lattice parameters. Misfit dislocations are formed at the interface between the distinctive layer and the BST film bulk layer relaxing the latter as the film thickness increases. The effect of the distinctive layer on the system dielectric response is discussed within the framework of an interfacial dead-layer model.
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77.55.-g Dielectric thin films

Nanoscale imaging of grain orientations and ferroelectric domains in (Bi1−xLax)4Ti3O12 films for ferroelectric memories

B. Yang, N. J. Park, B. I. Seo, Y. H. Oh, S. J. Kim, S. K. Hong, S. S. Lee, and Y. J. Park

Appl. Phys. Lett. 87, 062902 (2005); http://dx.doi.org/10.1063/1.2009835 (3 pages) | Cited 4 times

Online Publication Date: 4 August 2005

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We report results of nanoscopic investigation of grain crystallographic orientations and ferroelectric domains by electron backscatter diffraction (EBSD) technique and piezoresponse force microscope (PFM), respectively, in (Bi1−xLax)4Ti3O12 (BLT) films for ferroelectric semiconductor memories. It is demonstrated that the EBSD technique is useful in characterizing nanoscale grain crystallographic orientations of BLT films. Comparison studies of grain orientations by EBSD technique and switching properties of ferroelectric domains by PFM show that c-axis parallel to normal oriented grains with almost linear dielectric properties have platelike morphology. However, a- or b-axis oriented grains with superior ferroelectric properties have ellipsoidal morphology with a size of less than 0.2 μm in long axis. Consequently, the suppression of the platelike structures through process controls is important for the realization of high-density BLT-based memories.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.55.-g Dielectric thin films
68.55.-a Thin film structure and morphology
77.80.Dj Domain structure; hysteresis
77.80.Fm Switching phenomena
61.46.-w Structure of nanoscale materials
73.61.Ng Insulators
79.20.Kz Other electron-impact emission phenomena
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