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8 Aug 2005

Volume 87, Issue 6, Articles (06xxxx)

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Appl. Phys. Lett. 87, 061103 (2005); http://dx.doi.org/10.1063/1.2008357 (3 pages)

Y. C. Zhong, S. A. Zhu, H. M. Su, H. Z. Wang, J. M. Chen, Z. H. Zeng, and Y. L. Chen
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Friction transfer deposition of ordered conjugated polymer nanowires and transistor fabrication

S. P. Li, C. J. Newsome, D. M. Russell, T. Kugler, M. Ishida, and T. Shimoda

Appl. Phys. Lett. 87, 062101 (2005); http://dx.doi.org/10.1063/1.2009063 (3 pages) | Cited 15 times

Online Publication Date: 1 August 2005

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Monodisperse, ordered conjugated polymer nanowires were deposited by friction-transfer technique. Films that comprise such ordered polymer nanowires show a strong optical and electronic anisotropy due to the high compaction of molecule chains in the individual nanowires. Field-effect transistors that were fabricated using poly[9,9-dioctylfluorene-co-bithiophene(F8T2)] nanowires exhibit a field-effect mobility of 3.5×10−2 cm2 V−1 s−1 along the wire direction, which is much higher than the mobility value (5×10−3 cm2 V−1 s−1) obtained in transistors with spin-coated F8T2.
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81.05.Hd Other semiconductors
81.05.Lg Polymers and plastics; rubber; synthetic and natural fibers; organometallic and organic materials
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
85.30.Tv Field effect devices
81.07.Vb Quantum wires
68.55.A- Nucleation and growth
73.63.Nm Quantum wires
78.67.Lt Quantum wires
78.66.Qn Polymers; organic compounds

Observation of hysteretic magnetoresistance in Mn-doped GaN nanowires with the mesoscopic Co and Ti/Au contacts

Seong-Eok Han, Hwangyou Oh, Ju-Jin Kim, Han-Kyu Seong, and Heon-Jin Choi

Appl. Phys. Lett. 87, 062102 (2005); http://dx.doi.org/10.1063/1.2009832 (3 pages) | Cited 9 times

Online Publication Date: 2 August 2005

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We have studied the spin dependent tunneling properties of Mn-doped GaN nanowires with ferromagnetic Co contacts. The magnetoresistances were measured between two ferromagnetic Co electrodes, or Co and Ti/Au electrodes through Mn-doped GaN nanowires. The magnetoresistances of nanowire with the Co electrode indicate hysteretic behaviors, which are commonly observed in tunnel magnetoresistance devices. The magnetoresistance ratio increases from −0.6% at 20 K to −9.4% at 1.74 K. It is believed that the hysteretic magnetoresistances originate from the tunnel magnetoresistance effect between the ferromagnetic phases of nanowire and Co electrode.
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73.63.Bd Nanocrystalline materials
75.50.Pp Magnetic semiconductors
72.25.Mk Spin transport through interfaces
75.47.−m

Two-dimensional electrons at a cleaved semiconductor surface: Observation of the quantum Hall effect

Yukihide Tsuji, Toshimitsu Mochizuki, and Tohru Okamoto

Appl. Phys. Lett. 87, 062103 (2005); http://dx.doi.org/10.1063/1.2009811 (3 pages) | Cited 9 times

Online Publication Date: 2 August 2005

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Low-temperature in-plane magnetotransport measurements have been performed on adsorbate-induced electron systems formed at in situ cleaved surfaces of p-type InAs. The Ag-coverage dependence of the surface electron density strongly supports a simple model based on a surface donor level lying above the conduction-band minimum. The observations of the quantized Hall resistance and zero longitudinal resistivity demonstrate the perfect two dimensionality of the surface electron system. We also observed the Rashba effect due to the strong asymmetry of the confining potential well.
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68.47.Fg Semiconductor surfaces
73.43.-f Quantum Hall effects
72.20.My Galvanomagnetic and other magnetotransport effects
73.63.-b Electronic transport in nanoscale materials and structures
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.20.Hb Impurity and defect levels; energy states of adsorbed species
73.20.At Surface states, band structure, electron density of states

Assemblies of silicon nanoparticles roll up into flexible nanotubes

Sahraoui Chaieb, Munir H. Nayfeh, and Adam D. Smith

Appl. Phys. Lett. 87, 062104 (2005); http://dx.doi.org/10.1063/1.2009051 (3 pages) | Cited 2 times

Online Publication Date: 3 August 2005

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When a colloidal dispersion of fluorescent 1 nm silicon nanoparticles in alcohol is subjected to an electric field, the nanoparticles are driven to the surface of the anode substrate, where they form a thin film. Upon drying, the film delaminates from the surface of the anode and rolls up into ∼ 100 μm long nanotube. Nanotube diameters ranging from 0.2 to 5 μm with wall thicknesses in the range of 20–40 nm have been achieved. By applying a force on the tubes using atomic force microscopy, we estimate Young’s modulus of the film and find it to be close to that of rubber. We also study the crystalline structure of the film using electron diffraction and find it to be quartzlike.
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61.46.-w Structure of nanoscale materials
62.25.-g Mechanical properties of nanoscale systems
68.37.−d
81.07.−b
81.16.−c

Negative-U property of oxygen vacancy in cubic HfO2

Y. P. Feng, A. T. L. Lim, and M. F. Li

Appl. Phys. Lett. 87, 062105 (2005); http://dx.doi.org/10.1063/1.2009826 (3 pages) | Cited 25 times

Online Publication Date: 3 August 2005

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Oxygen vacancy in cubic HfO2 was investigated using first-principles calculation based on density functional theory and generalized gradient approximation. Five different charge states (V++, V+, V0, V−, and V−−) were investigated. It was found that the oxygen vacancy in HfO2 has negative-U behavior and it is energetically favorable for the vacancy to trap two electrons or two holes when the respective charges are injected into the oxide, due to large electron-lattice interaction. Therefore, oxygen vacancy is a main source of charge traps in both n- and p-type metal-oxide-semiconductor field-effect transistors based on HfO2, and reducing such defects will be useful in limiting charge trapping and in improving the quality of the high-k dielectric in modern complementary metal-oxide semiconductor technology.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
61.72.J- Point defects and defect clusters
85.30.Tv Field effect devices

Submicron periodic poling and chemical patterning of GaN

S. Pezzagna, P. Vennéguès, N. Grandjean, A. D. Wieck, and J. Massies

Appl. Phys. Lett. 87, 062106 (2005); http://dx.doi.org/10.1063/1.2009839 (3 pages) | Cited 12 times

Online Publication Date: 5 August 2005

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Periodic polarity (PePo) GaN films are grown by molecular-beam epitaxy. A high Mg doping is used to reverse the film polarity from Ga to N. An etching step is then performed to define the PePo pattern. Ultrasharp inversion domain boundaries between Ga- and N-polar domains are shown by transmission electron microscopy. Moreover, it is demonstrated that three-dimensional (3D) patterned Ga-polarity GaN films can be obtained from these PePo samples by a simple wet chemical etching procedure. When combined with a focused ion beam (FIB) to define the initial PePo template, periodic poling as well as chemical 3D patterning is demonstrated down to the nanometer scale.
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81.05.Ea III-V semiconductors
68.55.A- Nucleation and growth
68.55.-a Thin film structure and morphology
81.16.Rf Micro- and nanoscale pattern formation
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
81.65.Cf Surface cleaning, etching, patterning
61.72.uj III-V and II-VI semiconductors
68.37.Lp Transmission electron microscopy (TEM)
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