• Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

8 Aug 2005

Volume 87, Issue 6, Articles (06xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 87, 061103 (2005); http://dx.doi.org/10.1063/1.2008357 (3 pages)

Y. C. Zhong, S. A. Zhu, H. M. Su, H. Z. Wang, J. M. Chen, Z. H. Zeng, and Y. L. Chen
back to top
RSS Feeds

Read-out of micromechanical cantilever sensors by phase shifting interferometry

M. Helm, J. J. Servant, F. Saurenbach, and R. Berger

Appl. Phys. Lett. 87, 064101 (2005); http://dx.doi.org/10.1063/1.2008358 (3 pages) | Cited 17 times

Online Publication Date: 2 August 2005

Full Text: Read Online (HTML) | Download PDF

Show Abstract
White light interferometry was applied to determine the bending of micromechanical cantilever sensors (MCS) with an error typically less than 1 per mille. Deflections smaller than 2 nm could be resolved at a lateral resolution of 2 μm. Absolute values for curvatures can be determined and suitable reference points can be chosen on the MCS support. This was demonstrated in experiments using plasma polymerized polyallylamine films, which cross link upon ultraviolet light irradiation. The results suggest that 100 μm long segments are sufficient to estimate reliable curvature radii of 450 μm long microcantilever sensors.
Show PACS
81.70.Fy Nondestructive testing: optical methods
42.87.Bg Phase shifting interferometry
07.60.Ly Interferometers
06.30.Bp Spatial dimensions (e.g., position, lengths, volume, angles, and displacements)

Current-controlled lithography on conducting SrTiO3−δ thin films by atomic force microscopy

L. Pellegrino, E. Bellingeri, A. S. Siri, and D. Marré

Appl. Phys. Lett. 87, 064102 (2005); http://dx.doi.org/10.1063/1.2009054 (3 pages) | Cited 20 times

Online Publication Date: 2 August 2005

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The application of local anodic oxidation to conducting perovskite oxides such as SrTiO3−δ thin films causes a local decomposition of the films shown by the formation of mounds at the surface. The size of the patterns is limited by the dimension of the water meniscus which forms under the biased tip of the atomic force microscope (AFM). Due to the instabilities of the water meniscus, biasing with a constant voltage in contact mode does not guarantee a good uniformity of the patterns. In this work, we show and discuss how, by controlling the electrical current through the AFM tip, it is possible to realize lines with uniform widths down to 150 nm over a total length of hundreds of micrometers.
Show PACS
81.16.Nd Micro- and nanolithography
81.16.Ta Atom manipulation
81.65.Mq Oxidation
73.61.-r Electrical properties of specific thin films

Methods for the accurate analysis of channeling Rutherford backscattering spectrometry

Lin Shao and Michael Nastasi

Appl. Phys. Lett. 87, 064103 (2005); http://dx.doi.org/10.1063/1.2007861 (3 pages) | Cited 1 time

Online Publication Date: 4 August 2005

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The accuracy of quantitative analysis of disorder profiles in monocrystalline solids by using Rutherford backscattering spectrometry has been limited by the issues that: (1) the stopping power of channeled and nonchanneled particles differ substantially; (2) the backscattering of channeled particles from displaced atoms is hard to separate from the backscattering of dechanneled particles. In this study, we have developed a systematic approach to solve these problems by using (1) channeling stopping power to describe energy loss of incident beams for an accurate energy-depth conversion; and (2) an improved iteration process to separate the yield contribution from dechanneled ions. The unique iterative process developed in this study is able to accurately calculate the dechanneling fraction, the direct backscattering fraction and the dechanneling cross section.
Show PACS
82.80.Yc Rutherford backscattering (RBS), and other methods of chemical analysis
61.85.+p Channeling phenomena (blocking, energy loss, etc.)
68.49.Sf Ion scattering from surfaces (charge transfer, sputtering, SIMS)
Close
Google Calendar
ADVERTISEMENT

close