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8 Aug 2005

Volume 87, Issue 6, Articles (06xxxx)

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Appl. Phys. Lett. 87, 061103 (2005); http://dx.doi.org/10.1063/1.2008357 (3 pages)

Y. C. Zhong, S. A. Zhu, H. M. Su, H. Z. Wang, J. M. Chen, Z. H. Zeng, and Y. L. Chen
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Magnetic property investigations on Mn-doped ZnO Layers on sapphire

A. Che Mofor, A. El-Shaer, A. Bakin, A. Waag, H. Ahlers, U. Siegner, S. Sievers, M. Albrecht, W. Schoch, N. Izyumskaya, V. Avrutin, S. Sorokin, S. Ivanov, and J. Stoimenos

Appl. Phys. Lett. 87, 062501 (2005); http://dx.doi.org/10.1063/1.2007864 (3 pages) | Cited 54 times

Online Publication Date: 1 August 2005

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The need for diluted magnetic semiconductors has stimulated research on Mn-doped ZnO. However, the type of magnetic coupling (ferro/para) in ZnMnO remains an issue of debate. We have investigated the magnetic properties of Mn-doped ZnO layers grown by molecular beam epitaxy. Some samples showed a hysteresis with remnant magnetization on the order of 10−5 emu, thus eventually suggesting ferromagnetism. We observed that the critical influence of the substrate substantially affects magnetic property measurements. This has to be taken into account in order to clearly confirm ferromagnetism. In our case, after subtraction of the substrate effect, there is no evidence of a ferromagnetic behavior for the ZnMnO samples.
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75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)
75.50.Pp Magnetic semiconductors
75.50.Dd Nonmetallic ferromagnetic materials
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
75.20.Ck Nonmetals
81.05.Dz II-VI semiconductors

Push-pull mode magnetostrictive/piezoelectric laminate composite with an enhanced magnetoelectric voltage coefficient

Shuxiang Dong, Jungyi Zhai, Feiming Bai, Jie-Fang Li, and D. Viehland

Appl. Phys. Lett. 87, 062502 (2005); http://dx.doi.org/10.1063/1.2007868 (3 pages) | Cited 69 times

Online Publication Date: 1 August 2005

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A magnetoelectric (ME) laminate composite consisting of a symmetric longitudinally poled piezoelectric Pb(Mg1/3Nb2/3)O3–PbTiO3 crystal and two longitudinally magnetized magnetostrictive Tb1−xDyxFe2 layers has been developed that has a notably superior ME voltage coefficient, relative to previous laminate configurations. The symmetric nature of the longitudinally poled piezoelectric layer allows for operation in a push-pull mode that optimizes elastic coupling between layers. Our small laminate has a giant ME voltage coefficient of ∼ 1.6 V/Oe at low frequencies, a significant enhancement of this coefficient to ∼ 20 V/Oe under resonance drive, and an exceptional low-level magnetic field sensitivity of ∼ 10−12 T at f = f0.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
75.80.+q Magnetomechanical effects, magnetostriction
77.65.-j Piezoelectricity and electromechanical effects

Spatially resolved observation of domain-wall propagation in a submicron ferromagnetic NOT-gate

Xiaobin Zhu, Dan A. Allwood, Gang Xiong, Russell P. Cowburn, and Peter Grütter

Appl. Phys. Lett. 87, 062503 (2005); http://dx.doi.org/10.1063/1.2009050 (3 pages) | Cited 8 times

Online Publication Date: 1 August 2005

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Domain-wall propagation under an external magnetic field in a submicron ferromagnetic ring integrated with a NOT-junction is investigated by magnetic force microscopy and micromagnetic modeling. Within a certain magnetic field range, one head-to-head or tail-to-tail domain wall propagates in the structure. Magnetic fields above this range cause nucleation of additional domain walls in the ring structure while fields below this range are not able to switch the NOT-junction magnetization. This explicitly demonstrates the magnetization reversal, operation, and failure modes of a magnetic NOT-junction.
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75.60.Ch Domain walls and domain structure
75.50.Bb Fe and its alloys
68.37.Rt Magnetic force microscopy (MFM)
75.60.Jk Magnetization reversal mechanisms
84.30.Sk Pulse and digital circuits

Magnetic tuning of Fermi level for tunnel spintronics devices

Yu. G. Pogorelov, J. B. Sousa, and J. P. Araújo

Appl. Phys. Lett. 87, 062504 (2005); http://dx.doi.org/10.1063/1.2009049 (3 pages)

Online Publication Date: 2 August 2005

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Treating itinerant magnetism within the simplest two-subband Hubbard model, it is shown that the variation of the Fermi energy under applied magnetic field is inversely proportional to the spontaneous magnetization (when the latter is small). Hence, the variation is most pronounced at closeness to the critical Stoner condition, that is to the quantum critical point of ferromagnetic condition. The perspectives of this result for magnetic tuning of tunnel conductance in spintronics devices are discussed.
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75.10.Lp Band and itinerant models
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
72.25.-b Spin polarized transport

Alignment and analyses of MnBi/Bi nanostructures

K. Kang, L. H. Lewis, and A. R. Moodenbaugh

Appl. Phys. Lett. 87, 062505 (2005); http://dx.doi.org/10.1063/1.2008368 (3 pages) | Cited 8 times

Online Publication Date: 3 August 2005

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A Mn5Bi95 alloy was rapidly solidified into a mixture of nanocrystalline Bi and metastable Bi(Mn). Heating the ribbons to temperature T = 525 K in a dc magnetic field causes formation and c-axis alignment of low-temperature phase (LTP) MnBi nanorods along the applied field direction. Nanorod alignment increases with increased magnetic field, with a calculated alignment half-angle of 47° for a sample heated to 520 K at 50 kOe. In situ magnetization changes suggest that nanorod alignment is achieved by rotation of MnBi particles. Particle alignment enables the measurement of the MnBi nanorod spin reorientation temperature of 100 K, the same as its bulk counterpart.
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75.50.Tt Fine-particle systems; nanocrystalline materials
75.25.-j Spin arrangements in magnetically ordered materials (including neutron and spin-polarized electron studies, synchrotron-source x-ray scattering, etc.)
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
75.40.Gb Dynamic properties (dynamic susceptibility, spin waves, spin diffusion, dynamic scaling, etc.)
61.46.-w Structure of nanoscale materials
81.07.Bc Nanocrystalline materials
81.30.Fb Solidification

Ferromagnetic ordering in nanostructured Mn-doped InP

P. Poddar, Y. Sahoo, H. Srikanth, and P. N. Prasad

Appl. Phys. Lett. 87, 062506 (2005); http://dx.doi.org/10.1063/1.2009840 (3 pages) | Cited 17 times

Online Publication Date: 3 August 2005

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We report the observation of ferromagnetic ordering at 25 K in a diluted magnetic semiconductor (DMS) nanoparticle system: In0.9Mn0.1P, sized 3 nm. These particles were synthesized using a novel nanochemical technique without using any external surfactant. Structural and elemental characterizations established the occurrence of the zinc-blende phase of the DMS without any separate or induced impurity phase. A robust onset of ferromagnetic order is observed in magnetization measurements at around 25 K with blocked state behavior below 15 K characteristic of magnetic nanoparticles. The system shows strong frequency dependence of the susceptibility, similar to the behavior observed for spin glasses. Reversible transverse susceptibility experiments done using a resonant radio-frequency (rf) method reveal a strong temperature-dependent effective anisotropy.
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75.50.Pp Magnetic semiconductors
75.50.Dd Nonmetallic ferromagnetic materials
75.50.Tt Fine-particle systems; nanocrystalline materials
75.30.Cr Saturation moments and magnetic susceptibilities
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
75.30.Gw Magnetic anisotropy
75.30.Kz Magnetic phase boundaries (including classical and quantum magnetic transitions, metamagnetism, etc.)
61.46.-w Structure of nanoscale materials
81.07.Bc Nanocrystalline materials

Effect of bias on indirect exchange within magnetic nanostructures

V. I. Kozub and V. Vinokur

Appl. Phys. Lett. 87, 062507 (2005); http://dx.doi.org/10.1063/1.2009810 (3 pages) | Cited 2 times

Online Publication Date: 4 August 2005

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We formulate a theory of a reversible switching of the magnetic state of magnetic multilayers embedded in the metallic nanoconstriction by the external bias. The switching is related to the effect of strongly nonequilibrium electron distribution existing in the biased nanoconstriction on the indirect exchange coupling between the magnetic layers.
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85.75.-d Magnetoelectronics; spintronics: devices exploiting spin polarized transport or integrated magnetic fields
75.30.Et Exchange and superexchange interactions
71.70.Gm Exchange interactions
75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)
75.60.-d Domain effects, magnetization curves, and hysteresis
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