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8 Aug 2005

Volume 87, Issue 6, Articles (06xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 87, 061103 (2005); http://dx.doi.org/10.1063/1.2008357 (3 pages)

Y. C. Zhong, S. A. Zhu, H. M. Su, H. Z. Wang, J. M. Chen, Z. H. Zeng, and Y. L. Chen
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Quantum dot strain engineering for light emission at 1.3, 1.4 and 1.5 μm

L. Seravalli, P. Frigeri, M. Minelli, P. Allegri, V. Avanzini, and S. Franchi

Appl. Phys. Lett. 87, 063101 (2005); http://dx.doi.org/10.1063/1.2007860 (3 pages) | Cited 24 times

Online Publication Date: 1 August 2005

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We designed and prepared by molecular beam epitaxy strain-engineered InAs/InGaAs/GaAs quantum dot (QD) nanostructures where we separately controlled: (i) the mismatch f between QDs and confining layers (CLs), and, then, the QD strain, by changing the thickness of a partially relaxed InGaAs lower CL and (ii) the CL composition x. The appropriate values of f and x to tune the emission energies at wavelengths in the 1.3–1.55 μm range were calculated by means of a simple model. Comparing model calculations and activation energies of photoluminescence quenching, we also concluded that quenching is due to both intrinsic and extrinsic processes; we show that the structures can be designed so as to maximize the activation energy of the intrinsic process, while keeping the emission energy at the intended value in the 1.3–1.55 μm range.
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68.65.Hb Quantum dots (patterned in quantum wells)
78.67.Hc Quantum dots
78.55.Cr III-V semiconductors
81.07.Ta Quantum dots
61.46.-w Structure of nanoscale materials

Characterizing energy dissipation in single-walled carbon nanotube polycarbonate composites

Nikhil A. Koratkar, Jonghwan Suhr, Amit Joshi, Ravi S. Kane, Linda S. Schadler, Pulickel M. Ajayan, and Steve Bartolucci

Appl. Phys. Lett. 87, 063102 (2005); http://dx.doi.org/10.1063/1.2007867 (3 pages) | Cited 33 times

Online Publication Date: 1 August 2005

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In this study, single-walled carbon nanotube and bisphenol-A-polycarbonate composite beams were fabricated by a solution mixing process and dynamic (cyclic) load tests were performed to characterize energy dissipation. We report up to an order of magnitude (>1000%) increase in loss modulus of the polycarbonate system with the addition of 2% weight fraction of oxidized single-walled nanotube fillers. We show that the increase in damping is derived from frictional sliding at the nanotube-polymer interfaces. The nanoscale dimensions of the tubes not only result in large interfacial contact area, thereby generating high damping efficiency, but also enable seamless integration of the filler materials into the composite structure.
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81.05.Qk Reinforced polymers and polymer-based composites
81.07.De Nanotubes
81.05.U- Carbon/carbon-based materials
81.40.Jj Elasticity and anelasticity, stress-strain relations
81.40.Pq Friction, lubrication, and wear
62.40.+i Anelasticity, internal friction, stress relaxation, and mechanical resonances
62.20.Qp Friction, tribology, and hardness
81.16.-c Methods of micro- and nanofabrication and processing
64.75.-g Phase equilibria
61.72.Hh Indirect evidence of dislocations and other defects (resistivity, slip, creep, strains, internal friction, EPR, NMR, etc.)

Nucleation of diamond by pure carbon ion bombardment—a transmission electron microscopy study

Y. Yao, M. Y. Liao, Z. G. Wang, Y. Lifshitz, and S. T. Lee

Appl. Phys. Lett. 87, 063103 (2005); http://dx.doi.org/10.1063/1.2007869 (3 pages) | Cited 1 time

Online Publication Date: 1 August 2005

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A cross-sectional high-resolution transmission electron microscopy (HRTEM) study of a film deposited by a 1 keV mass-selected carbon ion beam onto silicon held at 800 °C is presented. Initially, a graphitic film with its basal planes perpendicular to the substrate is evolving. The precipitation of nanodiamond crystallites in upper layers is confirmed by HRTEM, selected area electron diffraction, and electron energy loss spectroscopy. The nucleation of diamond on graphitic edges as predicted by Lambrecht et al. [ W. R. L. Lambrecht, C. H. Lee, B. Segall, J. C. Angus, Z. Li, and M. Sunkara, Nature, 364 607 (1993) ] is experimentally confirmed. The results are discussed in terms of our recent subplantation-based diamond nucleation model.
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81.05.U- Carbon/carbon-based materials
81.15.Jj Ion and electron beam-assisted deposition; ion plating
68.55.A- Nucleation and growth
68.55.-a Thin film structure and morphology
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
61.46.-w Structure of nanoscale materials
81.30.Mh Solid-phase precipitation
79.20.Uv Electron energy loss spectroscopy
68.37.Lp Transmission electron microscopy (TEM)

Fast and reversible excited state absorption in II-VI-based nanocomposite thin films

Parinda Vasa, Pushan Ayyub, and B. P. Singh

Appl. Phys. Lett. 87, 063104 (2005); http://dx.doi.org/10.1063/1.2007871 (3 pages) | Cited 4 times

Online Publication Date: 1 August 2005

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Nanocomposite CdS-ZnO thin films deposited directly on quartz substrates by high-pressure magnetron sputtering show a completely reversible photodarkening at a very low threshold intensity ( ∼ 1 kWcm−2), and a moderately fast recovery time (<1 ms). This makes them ideal in optical limiting applications for both continuous wave as well as high rep-rate pulsed lasers. The same system also shows an intensity-dependent quenching of the photoluminescence. Using a pump-probe experiment, we show that photodarkening in such a quantum-dot thin film originates from excited state absorption.
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78.67.Hc Quantum dots
78.55.Et II-VI semiconductors
78.40.Fy Semiconductors

Ultraviolet emission from layered nanocomposites of Zn(OH)2 and sodium dodecyl sulfate prepared by laser ablation in liquid

Hiroyuki Usui, Takeshi Sasaki, and Naoto Koshizaki

Appl. Phys. Lett. 87, 063105 (2005); http://dx.doi.org/10.1063/1.2008373 (3 pages) | Cited 18 times

Online Publication Date: 1 August 2005

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We investigated the optical properties of Zn nanocomposites with the lamellar structure of sodium dodecyl sulfate (SDS) molecules prepared by laser ablation in an SDS aqueous solution. The absorption band of the nanocomposites was found at the same wavelength as that of ZnO (370 nm). The peak positions of the nanocomposites in the photoluminescence and excitation spectra were almost the same as those of ZnO. This coincidence implies that the ZnO electronic structure was partially formed in the nanocomposites. Two structural possibilities were discussed for the nanocomposites.
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78.40.Ha Other nonmetallic inorganics
78.55.Hx Other solid inorganic materials
78.67.-n Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures
42.62.-b Laser applications
81.07.Bc Nanocrystalline materials
81.16.-c Methods of micro- and nanofabrication and processing

Fe nanocrystal growth on SrTiO3(001)

Fabien Silly and Martin R. Castell

Appl. Phys. Lett. 87, 063106 (2005); http://dx.doi.org/10.1063/1.2008375 (3 pages) | Cited 10 times

Online Publication Date: 1 August 2005

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We have investigated the structure and morphology of self-assembled iron nanocrystals supported on a SrTiO3(001)-c(4×2) substrate using scanning tunneling microscopy. Nanocrystals with a truncated pyramid shape were imaged, which result from the epitaxial growth of bcc Fe on SrTiO3(001). By using the dimensions of the nanocrystal facets at equilibrium and an energy minimization calculation, we obtain the adhesion energy γadh = (3.05±0.15) J/m2 for bcc Fe on SrTiO3(001)-c(4×2).
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81.07.Bc Nanocrystalline materials
81.16.Dn Self-assembly
61.46.-w Structure of nanoscale materials
61.66.Bi Elemental solids
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)

Large-scale fabrication of boron nitride nanohorn

Chunyi Zhi, Yoshio Bando, Chengchun Tang, Dmitri Golberg, Rongguo Xie, and Takashi Sekiguchi

Appl. Phys. Lett. 87, 063107 (2005); http://dx.doi.org/10.1063/1.2009056 (3 pages) | Cited 17 times

Online Publication Date: 1 August 2005

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Boron nitride nanohorns (BNNHs) are synthesized in large scale. Their morphology and structure were investigated by scanning electron microscopy and transmission electron microscopy. The hollow conical structure and particular aggregation behavior are revealed. Cathodoluminescence measurement is performed and ultraviolet light emission is observed, which indicates the potential applications of BNNHs in optical devices.
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81.07.-b Nanoscale materials and structures: fabrication and characterization
81.16.-c Methods of micro- and nanofabrication and processing
61.46.-w Structure of nanoscale materials
78.67.-n Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures
78.60.Hk Cathodoluminescence, ionoluminescence
78.55.Hx Other solid inorganic materials

Mechanism of field-aided lateral crystallization of amorphous silicon

Duck-Kyun Choi, Hyun-Chul Kim, and Young-Bae Kim

Appl. Phys. Lett. 87, 063108 (2005); http://dx.doi.org/10.1063/1.2009066 (3 pages) | Cited 6 times

Online Publication Date: 2 August 2005

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The crystallization mechanism of the amorphous silicon using the field-aided lateral crystallization process was studied. The crystallization initiates at the negatively biased side and progresses towards the positively biased side with an enhanced velocity. In addition, the crystallization velocity increases monotonically as the applied voltage increases to a point, and then decreases beyond the critical voltage point. The current level measurement during the heat treatment of simple test patterns showed that the resistivity of the Ni-free amorphous silicon was reduced by 4 orders of magnitude at 510 °C. The current density under the bias of 100 V is in the range of 100 A/cm2, which is enough to cause the electromigration at that temperature. Using the Nernst-Einstein equation, we prove that the process is governed by competition between the field-assisted diffusion and electromigration.
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81.10.Jt Growth from solid phases (including multiphase diffusion and recrystallization)
81.10.−h
66.30.Qa Electromigration

Template-free synthesis of helical hexagonal microtubes of indium nitride

Shudong Luo, Weiya Zhou, Wenxin Wang, Zengxing Zhang, Lifeng Liu, Xinyuan Dou, Jianxiong Wang, Xiaowei Zhao, Dongfang Liu, Yan Gao, Li Song, Yanjuan Xiang, Jianjun Zhou, and Sishen Xie

Appl. Phys. Lett. 87, 063109 (2005); http://dx.doi.org/10.1063/1.2009841 (3 pages) | Cited 14 times

Online Publication Date: 2 August 2005

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Single crystalline indium nitride (InN) helical microtubes with a hexagonal hollow cross section have been synthesized in bulk quantities by nitriding indium oxide powder in ammonia flux. As-prepared InN microtubes grow along the [0001] direction with typical outer diameters of 1–3 μm, wall thickness of 50–80 nm and lengths up to hundreds of microns. The InN microtubes exhibit both right-handed and left-handed helicities with helical angles ranging from zero to about 30°. Variation of helicity can be observed in a single tube. A number of observations demonstrate that the growth of the tubular structure occurs by the spiraling of the warped InN nanobelts. Photoluminescence spectrum of the microtubes presents a strong emission peak centered at 700 nm at room temperature.
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81.05.Ea III-V semiconductors
81.07.De Nanotubes
81.16.-c Methods of micro- and nanofabrication and processing
61.46.-w Structure of nanoscale materials
78.67.Ch Nanotubes
78.55.Cr III-V semiconductors

Growth of epitaxial InAs nanowires in a simple closed system

H. D. Park, S. M. Prokes, and R. C. Cammarata

Appl. Phys. Lett. 87, 063110 (2005); http://dx.doi.org/10.1063/1.1999846 (3 pages) | Cited 12 times

Online Publication Date: 3 August 2005

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The epitaxial growth of InAs nanowires on an InAs(111) substrate in a sealed quartz tube is described. The method is quite simple and fast, and uses only a bare InAs substrate and a gold colloid coated InAs(111) substrate. High quality InAs nanowires can be produced by this technique, with the nanowire diameter controllable by the variation of growth temperature. The composition of the seed particle at the tip of the nanowire indicates that the nanowires grew via the vapor-liquid-solid growth mechanism but with Au–In as the liquid alloy.
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81.07.Vb Quantum wires
81.05.Ea III-V semiconductors

Toward over unity proton sputtering yields from a hydrogen-terminated Si(111) 1×1 surface irradiated by slow highly charged Xe ions

Satoshi Takahashi, Masahide Tona, Kazuo Nagata, Nobuyuki Nakamura, Nobuo Yoshiyasu, Chikashi Yamada, Shunsuke Ohtani, and Makoto Sakurai

Appl. Phys. Lett. 87, 063111 (2005); http://dx.doi.org/10.1063/1.2009829 (3 pages) | Cited 4 times

Online Publication Date: 3 August 2005

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The emission of sputtered ions from a hydrogen-terminated Si(111) 1×1 surface has been measured for impact of slow (v<0.25vBohr) highly charged Xe ions. Proton sputtering yields increase strongly with projectile charge q (qγ;γ ∼ 4) and reach to the value greater than one for Xeq+ impact (q≧44). Yields of Si+ remain constant ( ∼ 0.1) for lower q (14≦q≦29) but increase with q for higher q region which shows that the apparent Coulomb explosion-like potential sputtering might set in and enhances the sputtering yield drastically over q = 29.
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79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces

Improvement of field emission characteristics of carbon nanotubes through metal layer intermediation

Taewon Jeong, Jungna Heo, Jeonghee Lee, Sanghyun Lee, Wonseok Kim, Hyunjung Lee, Sanghyun Park, J. M. Kim, Taesik Oh, Chongwyun Park, Ji-Beom Yoo, Byoungyun Gong, Naesung Lee, and SeGi Yu

Appl. Phys. Lett. 87, 063112 (2005); http://dx.doi.org/10.1063/1.2009055 (3 pages) | Cited 11 times

Online Publication Date: 4 August 2005

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A method of fabricating carbon nanotube (CNT)-based field emitters has been studied to improve field emission characteristics. From the supplementary substrate coated with CNTs, CNTs were transferred to the objective substrate through the metal intermediation (MI) layer where the heat and pressure were applied. CNTs were vertically aligned on the objective substrate after removing the supplementary substrate. The field enhancement effect of emitters can be increased by the formation of the sharp edges through CNT transfer process. This MI process allows one to lower the processing temperature below 300 °C and form the patterned CNT emitter arrays.
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81.07.De Nanotubes
85.45.Db Field emitters and arrays, cold electron emitters
81.16.Rf Micro- and nanoscale pattern formation
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