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15 Aug 2005

Volume 87, Issue 7, Articles (07xxxx)

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Appl. Phys. Lett. 87, 073101 (2005); http://dx.doi.org/10.1063/1.2010598 (3 pages)

Ji Ung Lee
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On the dynamics of the damage growth in 5 MeV oxygen-implanted lithium niobate

M. Bianconi, N. Argiolas, M. Bazzan, G. G. Bentini, M. Chiarini, A. Cerutti, P. Mazzoldi, G. Pennestrì, and C. Sada

Appl. Phys. Lett. 87, 072901 (2005); http://dx.doi.org/10.1063/1.2007855 (3 pages) | Cited 13 times

Online Publication Date: 8 August 2005

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The damage induced by 5 MeV oxygen ion implantation in x-cut congruent LiNbO3 has been investigated by Rutherford backscattering spectrometry channeling technique. The dynamics of the damage growth has been described by an analytical formula considering the separate contributions of nuclear and electronic energy deposition. It has been hypothesized that the nuclear damage provides the localization of the energy released to the electronic subsystem necessary for the conversion into atomic displacements. The strong influence of the preexisting defects on the damage pileup, foreseen by the analytical formula, has been experimentally verified by pre-implanting the samples with 500 keV oxygen ions. It has been shown that a subsequent 5 MeV oxygen implantation step gives rise to an impressive damage accumulation, eventually leading to the total amorphization of the surface, even at moderate fluences.
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61.72.up Other materials
61.80.Jh Ion radiation effects
61.82.Ms Insulators

Oxygen defects and Fermi level location in metal-hafnium oxide-silicon structures

Daeyoung Lim, Richard Haight, Matthew Copel, and Eduard Cartier

Appl. Phys. Lett. 87, 072902 (2005); http://dx.doi.org/10.1063/1.2011791 (3 pages) | Cited 27 times

Online Publication Date: 8 August 2005

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We describe an in situ method for measuring the band bending of Si substrates in complex metal-oxide-semiconductor systems using femtosecond pump-probe photoelectron spectroscopy. Following deposition of metal layers (Pt, Re, or Re oxide) on the high-k dielectric HfO2, measurement of the band bending in the underlying Si provides a direct determination of the location of the Fermi level within the Si band gap at the Si-dielectric interface. Changes in the Fermi level with post-deposition anneals and oxygen exposure were correlated with valence and core photoelectron spectroscopy as well as capacitance-voltage measurements. These studies illuminate the roles that gate metal work function, modified by metal induced gap states and defects within the oxide, such as oxygen vacancies, play in defining the location of the Fermi level in metal-oxide-semiconductor structures.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
78.47.-p Spectroscopy of solid state dynamics
79.60.Bm Clean metal, semiconductor, and insulator surfaces
61.72.J- Point defects and defect clusters
73.30.+y Surface double layers, Schottky barriers, and work functions
81.40.Gh Other heat and thermomechanical treatments

Electrical and optical properties of Pb(Mg1/3Nb2/3)O3–PbTiO3 thin films prepared by chemical solution deposition

A. Y. Liu, X. J. Meng, J. Q. Xue, J. L. Sun, J. Chen, and J. H. Chu

Appl. Phys. Lett. 87, 072903 (2005); http://dx.doi.org/10.1063/1.1999859 (3 pages) | Cited 12 times

Online Publication Date: 9 August 2005

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92%Pb(Mg1/3Nb2/3)O3–8%PbTiO3 (PMNT) thin films have been prepared on Pt∕Ti∕SiO2∕Si substrate with a LaNiO3 (LNO) buffer layer and on sapphire substrate by a chemical solution deposition method, respectively. X-ray diffraction analysis shows that the PMNT thin films on Pt∕Ti∕SiO2∕Si substrate are polycrystalline with (110)-preferential orientation. Pt∕PMNT∕Pt capacitors have been fabricated and show a ferroelectric character with a spontaneous polarization (Ps) of 25.2 μC/cm2 and a remanent polarization (Pr) of 6.56 μC/cm2. The dielectric constant (εr) and the dissipation factor (tan δ) at 1 kHz are 680 and 0.014, respectively. The band-gap energy of the PMNT thin films on the sapphire substrate was found to be about 4.03 eV by the optical transmission spectra measurement. The optical constants (n, k) of the PMNT thin films in the wavelength range of 2.5–12.6 μm were obtained by infrared spectroscopic ellipsometry measurement.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.55.-g Dielectric thin films
77.22.Ej Polarization and depolarization
78.66.Nk Insulators
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
78.30.Hv Other nonmetallic inorganics
85.50.-n Dielectric, ferroelectric, and piezoelectric devices
77.80.-e Ferroelectricity and antiferroelectricity
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
73.61.Ng Insulators
77.22.Ch Permittivity (dielectric function)
68.55.-a Thin film structure and morphology

Dieletric anomalies in Pb0.7(1−x)Ca0.7xLa0.2TiO3

Hwee Ping Soon, John Wang, Desheng Fu, and Mitsuru Itoh

Appl. Phys. Lett. 87, 072904 (2005); http://dx.doi.org/10.1063/1.2011767 (3 pages)

Online Publication Date: 9 August 2005

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Transitions from ferroelectric to relaxorlike and then to quantum paraelectriclike behavior occur in Pb0.7(1−x)Ca0.7xLa0.2TiO3 (PCLT) with increasing x from 0.05 to 0.60. The relaxorlike behavior, which can be well fitted to the Vogel-Fulcher relation, is clearly demonstrated by the frequency dispersions of permittivity. More interestingly, a thermal hysteresis of ∼ 5 K was observed in the temperature dependences of real and imaginary permittivity (ε′ and ε″) for PCLT with x = 0.40 under both zero-field cooling and zero-field heating conditions. The compositional dependence of transition temperature Tmax vanished with a finite slope, contrary to that of the quantum ferroelectric relation Tmax∝(x−xc)0.5.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.80.B- Phase transitions and Curie point
77.80.Dj Domain structure; hysteresis
77.22.Ch Permittivity (dielectric function)
81.40.Gh Other heat and thermomechanical treatments

Dielectric properties of epitaxial Ba0.5Sr0.5TiO3 films on amorphous SiO2 on sapphire

H. Li, J. Finder, Y. Liang, R. Gregory, and W. Qin

Appl. Phys. Lett. 87, 072905 (2005); http://dx.doi.org/10.1063/1.2011774 (3 pages) | Cited 11 times

Online Publication Date: 9 August 2005

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The strain-relieved crystalline Ba0.5Sr0.5TiO3 (BST) film on SiO2/Al2O3 was achieved by combining a molecular-beam epitaxy of BST on Si/Al2O3 and a post-growth anneal in oxygen at elevated temperatures. The oxidation anneal not only converted the thin Si interlayer into amorphous SiO2 and eliminated the dielectric loss from the Si, but also relieved local strain in the film. The resulting BST film showed promising dielectric properties with 66% tunability and 0.016 dielectric loss, respectively. Additionally, temperature-dependent permittivity of the BST film resembled that of the bulk BST ceramics.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.22.Gm Dielectric loss and relaxation
77.55.-g Dielectric thin films
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
81.40.Gh Other heat and thermomechanical treatments
68.60.Bs Mechanical and acoustical properties
81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
81.65.Mq Oxidation

Pseudo-epitaxial lead zirconate titanate thin film on silicon substrate with enhanced ferroelectric polarization

Wei Chuan Goh, Kui Yao, and C. K. Ong

Appl. Phys. Lett. 87, 072906 (2005); http://dx.doi.org/10.1063/1.2010606 (3 pages) | Cited 11 times

Online Publication Date: 10 August 2005

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A pseudo-epitaxial Pb(Zr0.52Ti0.48)O3 (PZT) thin film was fabricated on a silicon substrate using a La0.7Sr0.3MnO3/YBa2Cu3O7−δ/yttria-stabilized zirconia heterostructure template by a pulsed-laser deposition process. The pseudo-epitaxial PZT thin film was characterized with broad x-ray diffraction peaks and granular morphology with nanometer-sized pores distributed across the film. Despite the imperfect epitaxial quality, the pseudo-epitaxial PZT thin film exhibited a substantially larger ferroelectric polarization than those “ideal” epitaxial films deposited on silicon substrates. The possible mechanisms underlying this phenomenon were analyzed, and the results indicated that only improving the epitaxial quality without considering the tensile stress relief is not sufficient in achieving the optimal ferroelectric polarization for a ferroelectric film on silicon substrate.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.55.-g Dielectric thin films
77.22.Ej Polarization and depolarization
77.80.-e Ferroelectricity and antiferroelectricity
68.55.-a Thin film structure and morphology
81.05.Rm Porous materials; granular materials
61.43.Gt Powders, porous materials
61.46.-w Structure of nanoscale materials
81.07.Bc Nanocrystalline materials
81.15.Fg Pulsed laser ablation deposition
81.16.Mk Laser-assisted deposition
68.47.Gh Oxide surfaces

Effect of 90° domain movement on the piezoelectric response of patterned PbZr0.2Ti0.8O3/SrTiO3/Si heterostructures

Zhengkun Ma, F. Zavaliche, L. Chen, J. Ouyang, J. Melngailis, A. L. Roytburd, V. Vaithyanathan, D. G. Schlom, T. Zhao, and R. Ramesh

Appl. Phys. Lett. 87, 072907 (2005); http://dx.doi.org/10.1063/1.2012527 (3 pages) | Cited 10 times

Online Publication Date: 10 August 2005

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The converse longitudinal piezoelectric responses of PbZr0.2Ti0.8O3/SrTiO3/Si heterostructures have been studied for continuous films and for islands patterned by focused ion beam milling (typical dimension is 1×1×1 μm). The intrinsic piezoelectric response of the island with an immobile polydomain structure is modeled using finite element analysis. The difference between the results of experimental measurement and modeling is explained by an extrinsic contribution to the piezoresponse from 90° domain movement. The contribution of 90° domain movement to the total piezoresponse is shown to be greatly enhanced in the patterned islands, and leads to an effective piezoelectric coefficient ( ∼ 400 pm/V) which is five times larger than the theoretical bulk single domain value.
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77.55.-g Dielectric thin films
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.65.-j Piezoelectricity and electromechanical effects
77.80.Dj Domain structure; hysteresis
68.55.-a Thin film structure and morphology
68.35.B- Structure of clean surfaces (and surface reconstruction)

Microheterogeneity and field-cooling effects on Pb[(Zn1/3Nb2/3)0.955Ti0.045]O3 single crystals probed by micro-Brillouin scattering

Do Han Kim, Jae-Hyeon Ko, C. D. Feng, and Seiji Kojima

Appl. Phys. Lett. 87, 072908 (2005); http://dx.doi.org/10.1063/1.2012517 (3 pages) | Cited 7 times

Online Publication Date: 10 August 2005

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Microheterogeneity and field-cooling effects were investigated on Pb[(Zn1/3Nb2/3)0.955Ti0.045]O3 (PZN-4.5%PT) single crystals by using a high-resolution micro-Brillouin scattering. The temperature dependence of Brillouin shift showed a typical relaxor behavior with marked softening on approaching the diffuse phase transition, but also revealed a clear microareal variation in a rhombohedral phase below 150 °C which means a heterogeneity exists over a length scale of at least a few microns in PZN-4.5%PT. These two features seem to correlate with the coexistence of both micronsized domains and irregular nanosized domains, recently confirmed by high-resolution domain studies. This complex domain structure may make each microdomain represent different relaxor behaviors due to its own polar nanoregions and their dynamics. When the crystal was cooled under the electric field along the [001] direction from a cubic phase, two field-induced changes were observed in the Brillouin shift at around 143 °C and 106 °C. This observation is in good agreement with the dielectric measurements, meaning a medium-range ordered phase exists between short-range ordered and long-range order phases.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.80.Dj Domain structure; hysteresis
78.35.+c Brillouin and Rayleigh scattering; other light scattering
64.70.K- Solid-solid transitions

Self-assembled multiferroic nanostructures in the CoFe2O4-PbTiO3 system

Jianhua Li, Igor Levin, Julia Slutsker, Virgil Provenzano, Peter K. Schenck, R. Ramesh, Jun Ouyang, and Alexander L. Roytburd

Appl. Phys. Lett. 87, 072909 (2005); http://dx.doi.org/10.1063/1.2031939 (3 pages) | Cited 37 times

Online Publication Date: 10 August 2005

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The effect of substrate orientation on the morphologies of epitaxial self-assembled nanostructures was demonstrated using multiferroic 0.67PbTiO3-0.33CoFe2O4 thin films. The two-phase composite films were grown by pulsed laser deposition on single crystal SrTiO3 substrates having (001) and (110) orientations. The nanostructures of both orientations consisted of vertical rod- or platelet-like columns of CoFe2O4 dispersed in a PbTiO3 matrix. For the (001) orientation the platelet habits were parallel to the {110} planes, whereas for the (110) orientation the platelets were parallel to the {111} planes. The differences were explained using a thermodynamic theory of heterophase structures.
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77.84.Lf Composite materials
61.46.-w Structure of nanoscale materials
68.55.-a Thin film structure and morphology
77.55.-g Dielectric thin films
77.80.-e Ferroelectricity and antiferroelectricity
81.15.Fg Pulsed laser ablation deposition
81.16.Dn Self-assembly

Observation of piezoelectric resonance in time domain transient current of ferroelectric ceramics and crystals

Li Jin, Xi Yao, Xiaoyong Wei, and Zengzhe Xi

Appl. Phys. Lett. 87, 072910 (2005); http://dx.doi.org/10.1063/1.2031943 (3 pages) | Cited 4 times

Online Publication Date: 12 August 2005

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An abnormal resonance behavior was observed from the transient current in the time domain for both ferroelectric ceramics and single crystals excited with a stepwise electric field. The phenomenon can be accounted for as piezoelectric resonance. Corresponding resonant peaks in the frequency spectrum of impedance verified the piezoelectric origin of the abnormal resonance. Using a RLC series equivalent circuit of the piezoelectric resonance model, the resonance behavior of the transient current can be calculated and well fitted with experiments.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.80.Dj Domain structure; hysteresis
77.22.Gm Dielectric loss and relaxation
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