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22 Aug 2005

Volume 87, Issue 8, Articles (08xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 87, 083501 (2005); http://dx.doi.org/10.1063/1.2032609 (3 pages)

Yugang Sun, Seiyon Kim, Ilesanmi Adesida, and John A. Rogers
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Ultrafast traveling-wave electro-optic deflector using domain-engineered LiTaO3 crystal

Shintaro Hisatake, Kyoji Shibuya, and Tetsuro Kobayashi

Appl. Phys. Lett. 87, 081101 (2005); http://dx.doi.org/10.1063/1.2033133 (3 pages) | Cited 10 times

Online Publication Date: 15 August 2005

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We report a traveling-wave electro-optic sinusoidal deflector which operates in a picosecond time scale. The deflector is fabricated by use of simple domain-engineering processes in a LiTaO3 electro-optic crystal. The shape of the domain inverted region in a traveling-wave electro-optic phase modulator is theoretically designed in consideration of velocity mismatch between an optical group velocity and a microwave phase velocity in a crystal for spatial linear distribution of the modulation index within an optical beam cross section. At a deflection period of 61.5 ps, the maximum resolvable spot number of 13.0±0.6 is demonstrated. Our EOD can be applicable to time-space optical information processing systems with the minimum temporal resolution of 1.5 ps.
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42.79.Fm Reflectors, beam splitters, and deflectors
42.15.Eq Optical system design
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials

Direct comparison of threshold and gain characteristics of 1300 nm GaInNAs lasers with GaNAs and GaAs barriers

Y. Q. Wei, Y. Fu, X. D. Wang, P. Modh, P. O. Hedekvist, Q. F. Gu, M. Sadeghi, S. M. Wang, and A. Larsson

Appl. Phys. Lett. 87, 081102 (2005); http://dx.doi.org/10.1063/1.2034093 (3 pages) | Cited 11 times

Online Publication Date: 15 August 2005

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The threshold and gain characteristics of GaInNAs single quantum well (QW) lasers with GaNAs and GaAs barriers, both emitting at 1300 nm, have been compared. The threshold current density for the laser with GaAs barriers is twice as high, presumably because of a higher monomolecular recombination rate caused by the higher N concentration in the QW. A significant difference in the spectral gain characteristics was also observed. Calculations show that this is due to a modification of the confinement potential for the conduction band electrons when incorporating N in the barriers and reducing the N concentration in the QW. An additional inhomogeneous broadening also had to be included in the calculations to obtain quantitative agreement between measured and calculated gain spectra.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems

Near-field imaging of mid-infrared surface phonon polariton propagation

A. Huber, N. Ocelic, D. Kazantsev, and R. Hillenbrand

Appl. Phys. Lett. 87, 081103 (2005); http://dx.doi.org/10.1063/1.2032595 (3 pages) | Cited 23 times

Online Publication Date: 16 August 2005

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We demonstrate that mid-infrared surface phonon polariton propagation on a SiC crystal can be imaged by scattering-type near-field optical microscopy. From the infrared images, we measure the wave vector and the propagation length of locally excited surface phonon polaritons. Our method can be also applied to surface plasmon polaritons and allows to study surface polaritons in subwavelength-scale structures.
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68.37.Uv Near-field scanning microscopy and spectroscopy
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
71.36.+c Polaritons (including photon-phonon and photon-magnon interactions)
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
42.70.-a Optical materials

Normal incidence intersubband photoresponse from phosphorus δ-doped Ge dots

S. Tong, Hyung-Jun Kim, and Kang L. Wang

Appl. Phys. Lett. 87, 081104 (2005); http://dx.doi.org/10.1063/1.1929068 (3 pages)

Online Publication Date: 16 August 2005

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Normal incidence mid- and far-infrared photodetectors based on phosphorus δ-doped Ge dots were achieved on Si (100) substrates. Ge dots embedded in Si spacer layers were grown by molecular-beam epitaxy in the Stranski–Krastanov mode. The heavily doped (5×1019 cm−3) Ge dot in the intrinsic Si matrix forms self-consistent potential wells in the conduction band for the ionized electrons. Photoresponse was demonstrated for an n‐i‐n structure in both the mid- and far-infrared wavelength ranges. The nonvanishing normal incidence response was due to the presence of nonzero off-diagonal terms for the electron mass tensor in Ge.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
78.30.Am Elemental semiconductors and insulators
73.21.La Quantum dots
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Fabrication and performance of blue GaN-based vertical-cavity surface emitting laser employing AlN/GaN and Ta2O5/SiO2 distributed Bragg reflector

Chih-Chiang Kao, Y. C. Peng, H. H. Yao, J. Y. Tsai, Y. H. Chang, J. T. Chu, H. W. Huang, T. T. Kao, T. C. Lu, H. C. Kuo, S. C. Wang, and C. F. Lin

Appl. Phys. Lett. 87, 081105 (2005); http://dx.doi.org/10.1063/1.2032598 (3 pages) | Cited 27 times

Online Publication Date: 16 August 2005

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GaN-based vertical-cavity surface emitting laser with 3 λ cavity and hybrid mirrors, consisting of the 25 pairs AlN/GaN dielectric Bragg reflector and the 8 pairs Ta2O5/SiO2, was fabricated. The laser action was achieved under the optical pumping at room temperature with a threshold pumping energy density of about 53 mJ/cm2. The laser emits 448 nm blue wavelength with a linewidth of 0.25 nm and the laser beam has a degree of polarization of about 84%.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.82.Cr Fabrication techniques; lithography, pattern transfer
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
42.79.Bh Lenses, prisms and mirrors

Improving charge-injection balance and cathode transmittance of top-emitting organic light-emitting device with p-type silicon anode

G. L. Ma, G. Z. Ran, A. G. Xu, Y. H. Xu, Y. P. Qiao, W. X. Chen, L. Dai, and G. G. Qin

Appl. Phys. Lett. 87, 081106 (2005); http://dx.doi.org/10.1063/1.2032606 (3 pages) | Cited 14 times

Online Publication Date: 16 August 2005

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Both charge-injection balance and high transmittance for the cathode are important to achieve high electroluminescence (EL) efficiency for a top-emitting organic light-emitting device (TEOLED) fabricated on silicon substrate. In this letter, by optimizing the electrical resistivity of the p-type silicon chip used as the anode and applying a Yb∕Au double layer cathode with high electron-injection property and high transmittance, the TEOLED with a configuration of p-type silicon∕thermal grown SiO2∕NPB∕Alq3∕Yb∕Au exhibits a higher EL efficiency than those of the TEOLEDs each with a Si chip as the anode reported previously. Its current efficiency is almost equal to that of a TEOLED with the same configuration except for an indium tin oxide anode.
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85.60.Jb Light-emitting devices
85.60.Bt Optoelectronic device characterization, design, and modeling

High-power picosecond and femtosecond pulse generation from a two-section mode-locked quantum-dot laser

E. U. Rafailov, M. A. Cataluna, W. Sibbett, N. D. Il’inskaya, Yu. M. Zadiranov, A. E. Zhukov, V. M. Ustinov, D. A. Livshits, A. R. Kovsh, and N. N. Ledentsov

Appl. Phys. Lett. 87, 081107 (2005); http://dx.doi.org/10.1063/1.2032608 (3 pages) | Cited 47 times

Online Publication Date: 16 August 2005

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We demonstrate mode locking in a two-section quantum-dot laser that produces output powers up to 45 mW at 1260 nm. The pulse duration could be varied from 2 ps to as short as 400 fs at the 21 GHz pulse repetition rate.
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42.60.Fc Modulation, tuning, and mode locking
42.65.Re Ultrafast processes; optical pulse generation and pulse compression
42.55.Px Semiconductor lasers; laser diodes

Long-range third-harmonic generation in air using ultrashort intense laser pulses

F. Théberge, Q. Luo, W. Liu, S. A. Hosseini, M. Sharifi, and S. L. Chin

Appl. Phys. Lett. 87, 081108 (2005); http://dx.doi.org/10.1063/1.2033148 (3 pages) | Cited 11 times

Online Publication Date: 16 August 2005

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The generation of a powerful third-harmonic pulse in atmospheric air has been controlled over long-distance propagation using divergent and negatively chirped fundamental pulses. The cofilamentation of the high-intensity fundamental and third-harmonic pulses was observed over long propagation distance using the Lidar technique. The high peak intensity and the extremely broad spectral content generated by both fundamental and third-harmonic pulses imply promising applications for atmospheric remote sensing of pollutants and bioaerosols.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.65.Re Ultrafast processes; optical pulse generation and pulse compression
42.60.Fc Modulation, tuning, and mode locking
52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)
42.68.Kh Effects of air pollution

Resonant double grating waveguide structures as enhancement platforms for two-photon fluorescence excitation

S. Soria, A. Thayil K. N., G. Badenes, M. A. Bader, A. Selle, and G. Marowsky

Appl. Phys. Lett. 87, 081109 (2005); http://dx.doi.org/10.1063/1.2033130 (3 pages) | Cited 6 times

Online Publication Date: 16 August 2005

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We report a strong enhancement of two-photon fluorescence (TPF) excitation in the evanescent field of a double grating waveguide structure (DGWS). For a suitable combination of wavelength, polarization, and angular orientation of the incident laser light DGWSs show resonant behavior resulting in a large field enhancement at the waveguide surface. We demonstrate that at resonance, TPF spectroscopy reveals a 330-fold enhancement of the fluorescence signal of a tetramethylrhodamine thin film prepared from a picomolar aqueous solution. This shows the large potential of DGWSs as TPF-based high-sensitivity sensor platforms for biotechnological and biophysical application.
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42.79.Gn Optical waveguides and couplers
42.79.Dj Gratings
42.82.Et Waveguides, couplers, and arrays
78.66.Qn Polymers; organic compounds
78.55.Kz Solid organic materials

Extruded single-mode high-index-core one-dimensional microstructured optical fiber with high index-contrast for highly nonlinear optical devices

Xian Feng, Tanya M. Monro, Periklis Petropoulos, Vittoria Finazzi, and David J. Richardson

Appl. Phys. Lett. 87, 081110 (2005); http://dx.doi.org/10.1063/1.2034094 (3 pages) | Cited 10 times

Online Publication Date: 16 August 2005

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We report the fabrication of a high-index-core one-dimensional microstructured optical fiber incorporating with high index-contrast layers, using extrusion technique for preform fabrication. Single mode guidance and a high effective nonlinearity of 260±30 W−1 km−1 were observed in the fiber at 1.55 μm, highlighting the potential of such fibers for use in nonlinear optical devices.
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42.81.Bm Fabrication, cladding, and splicing
42.70.Qs Photonic bandgap materials
42.65.-k Nonlinear optics

An improved band-anticrossing model – including the positional dependence of nitrogen – for InGaNAs∕GaAs quantum well lasers

Y. N. Qiu and J. M. Rorison

Appl. Phys. Lett. 87, 081111 (2005); http://dx.doi.org/10.1063/1.2034103 (3 pages) | Cited 10 times

Online Publication Date: 16 August 2005

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The positional dependence of the localized nitrogen (N) within the quantum well is included with the band-anti-crossing model that describes the interaction of the GaInAs conduction band with the localized N defect. It is found that N located at the center of the well interacts more strongly with the InGaAs conduction band than N localized near the edge of the quantum well. Different distributions of N are investigated by studying the conduction band edge shift, energy level splitting, dipole moments, and gain. These quantities are found to be highly dependent upon the position of the N.
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42.55.Px Semiconductor lasers; laser diodes
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
73.20.At Surface states, band structure, electron density of states
71.55.Eq III-V semiconductors
73.21.Fg Quantum wells

Evidence of vectorial photoelectric effect on Copper

E. Pedersoli, F. Banfi, B. Ressel, S. Pagliara, C. Giannetti, G. Galimberti, S. Lidia, J. Corlett, G. Ferrini, and F. Parmigiani

Appl. Phys. Lett. 87, 081112 (2005); http://dx.doi.org/10.1063/1.2031949 (3 pages) | Cited 4 times

Online Publication Date: 17 August 2005

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Quantum efficiency (QE) measurements of single photon photoemission from a Cu(111) single crystal and a Cu polycrystal photocathodes, irradiated by 150 fs–6.28 eV laser pulses, are reported over a broad range of incidence angle, both in s and p polarizations. The maximum QE ( ≃ 4×10−4) for polycrystalline Cu is obtained in p polarization at an angle of incidence θ = 65°. We observe a QE enhancement in p polarization which cannot be explained in terms of optical absorption, a phenomenon known as vectorial photoelectric effect. Issues concerning surface roughness and symmetry considerations are addressed. An explanation in terms of nonlocal conductivity tensor is proposed.
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79.60.Bm Clean metal, semiconductor, and insulator surfaces
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
85.60.Ha Photomultipliers; phototubes and photocathodes
68.35.B- Structure of clean surfaces (and surface reconstruction)

Optically controlled slow and fast light in optical fibers using stimulated Brillouin scattering

Miguel González-Herráez, Kwang-Yong Song, and Luc Thévenaz

Appl. Phys. Lett. 87, 081113 (2005); http://dx.doi.org/10.1063/1.2033147 (3 pages) | Cited 67 times

Online Publication Date: 18 August 2005

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We demonstrate a method to achieve an extremely wide and flexible external control of the group velocity of signals as they propagate along an optical fiber. This control is achieved by means of the gain and loss mechanisms of stimulated Brillouin scattering in the fiber itself. Our experiments show that group velocities below 71 000 km/s on one hand, well exceeding the speed of light in vacuum on the other hand and even negative group velocities can readily be obtained with a simple benchtop experimental setup. We believe that the fact that slow and fast light can be achieved in a standard single-mode fiber, in normal environmental conditions and using off-the-shelf instrumentation, is very promising for a future use in real applications.
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42.81.Dp Propagation, scattering, and losses; solitons
42.65.Es Stimulated Brillouin and Rayleigh scattering

Subterranean silicon photonics: Demonstration of buried waveguide-coupled microresonators

Tejaswi Indukuri, Prakash Koonath, and Bahram Jalali

Appl. Phys. Lett. 87, 081114 (2005); http://dx.doi.org/10.1063/1.2009062 (3 pages) | Cited 6 times

Online Publication Date: 18 August 2005

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Laterally-coupled silicon microresonators are fabricated beneath the surface of a silicon-on-insulator substrate using a modified separation by implantation of an oxygen technique. Implantation of oxygen ions into a substrate with patterned thermal oxide mask was utilized to realize buried waveguiding structures. Microdisk resonators in the buried silicon layer show loaded quality factors of 2000, with extinction ratios in excess of 20 dB. The process also results in the formation of a silicon layer on the surface of the wafer that is suitable for the fabrication of electronic devices, thereby paving the way for three-dimensional monolithic integration of electronics and photonics in silicon.
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42.82.Et Waveguides, couplers, and arrays
42.82.Cr Fabrication techniques; lithography, pattern transfer

Broadband and gap-free response of a terahertz system based on a poled polymer emitter-sensor pair

Xuemei Zheng, Alexander Sinyukov, and L. Michael Hayden

Appl. Phys. Lett. 87, 081115 (2005); http://dx.doi.org/10.1063/1.2034115 (3 pages) | Cited 14 times

Online Publication Date: 19 August 2005

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We present a terahertz (THz) system based on a poled electro-optic (EO) polymer emitter-sensor pair for the generation and detection of broadband electromagnetic pulses free of spectral gaps. The gap-free THz spectrum obtained from the system is attributed to the amorphous form of the EO polymer films. Using ∼ 50-fs laser pulses centered at ∼ 800 nm, a ∼ 100-μm thick emitter, and a ∼ 180-μm thick sensor, the observable bandwidth is ∼ 12 THz. We also present an experimental study, in a systematic manner, on the effect of phase mismatch in the polymer emitter-sensor pair.
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84.40.-x Radiowave and microwave (including millimeter wave) technology
07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
85.60.-q Optoelectronic devices
42.70.Jk Polymers and organics
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Magnetron priming by multiple cathodes

M. C. Jones, V. B. Neculaes, Y. Y. Lau, R. M. Gilgenbach, W. M. White, B. W. Hoff, and N. M. Jordan

Appl. Phys. Lett. 87, 081501 (2005); http://dx.doi.org/10.1063/1.2031928 (3 pages) | Cited 8 times

Online Publication Date: 15 August 2005

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A relativistic magnetron priming technique using multiple cathodes is simulated with a three-dimensional, fully electromagnetic, particle-in-cell code. This technique is based on electron emission from N/2 individual cathodes in an N-cavity magnetron to prime the π mode. In the case of the six-cavity relativistic magnetron, π-mode start-oscillation times are reduced up to a factor of 4, and mode competition is suppressed. Most significantly, the highest microwave field power is observed by utilizing three cathodes compared to other recently explored priming techniques.
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84.40.Fe Microwave tubes (e.g., klystrons, magnetrons, traveling-wave, backward-wave tubes, etc.)
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Boron distribution in silicon after multiple pulse excimer laser annealing

E. V. Monakhov, B. G. Svensson, M. K. Linnarsson, A. La Magna, M. Italia, V. Privitera, G. Fortunato, M. Cuscunà, and L. Mariucci

Appl. Phys. Lett. 87, 081901 (2005); http://dx.doi.org/10.1063/1.2032603 (3 pages) | Cited 3 times

Online Publication Date: 15 August 2005

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We have studied B redistribution in Si after excimer laser annealing (ELA) with multiple laser pulses. B was implanted with energies of 1 and 10 keV and doses of 1×1014 and 1×1015 cm−2. ELA with the number of pulses from 1 to 100 was performed at room temperature and 450 °C in vacuum. Irrespective of the implantation parameters and the ELA conditions used, a pile-up in the B concentration is observed near the maximum melting depth after ten pulses of ELA. Moreover, a detailed study has revealed that B accumulates at the maximum melt depth gradually with the number of ELA pulses. Besides, an increase in the carrier concentration is observed at the maximum melt depth, suggesting electrical activity of the accumulated B. Formation of Si-B complexes and vacancy accumulation during multiple ELA are discussed as possible mechanisms for the B build-up.
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61.72.S- Impurities in crystals
81.05.Cy Elemental semiconductors
61.72.uf Ge and Si
61.80.Jh Ion radiation effects
61.82.Fk Semiconductors
61.72.Cc Kinetics of defect formation and annealing
61.72.J- Point defects and defect clusters

High room-temperature figure of merit of thin layers prepared by laser ablation from Bi2Te3 target

J. Walachová, R. Zeipl, J. Zelinka, V. Malina, M. Pavelka, M. Jelínek, V. Studnička, and P. Lošt’ák

Appl. Phys. Lett. 87, 081902 (2005); http://dx.doi.org/10.1063/1.2001755 (3 pages) | Cited 7 times

Online Publication Date: 16 August 2005

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The figure of merit ZT is measured by a Harman method on simple devices prepared on single thermoelectric layers of different thicknesses. The thermoelectric layers are prepared at different conditions by laser ablation from Bi2Te3 target. The best measured figure of merit ZT is for our devices ZT = 2.65. This result is comparable with the results obtained on superlattices. ZT oscillated with the thickness of the layers. On some devices the Seebeck coefficient is measured and using conductivity measurements along the thermoelectric layers the thermal conductivity is estimated from ZT. The low thermal conductivity of samples is explained by the quantum size effect and by existence of few phases of type Bi2(m+n)Te3n in the thermoelectric layers.
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72.15.Jf Thermoelectric and thermomagnetic effects
42.62.-b Laser applications
72.15.Eb Electrical and thermal conduction in crystalline metals and alloys
72.30.+q High-frequency effects; plasma effects
61.82.Bg Metals and alloys
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)

Nitrogen-induced suppression of an indium-gallium interdiffusion in InxGa1−xAs1−yNy/GaAs multiple-quantum wells

Gregor Mussler, Lutz Däweritz, and Klaus H. Ploog

Appl. Phys. Lett. 87, 081903 (2005); http://dx.doi.org/10.1063/1.2033135 (3 pages) | Cited 10 times

Online Publication Date: 16 August 2005

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In this letter, we present x-ray diffraction (XRD) measurements on as-grown and annealed (In,Ga)As/GaAs and (In,Ga)(As,N)/GaAs multiple-quantum wells grown on GaAs (001) substrates. Concerning the (In,Ga)As material system, we observe a shift of the envelope in the XRD curves of the annealed samples. This shift can be explained by an indium–gallium interdiffusion across the (In,Ga)As/GaAs interfaces. A diffusion model is employed to simulate the envelope shift which yields an activation energy of 0.8 eV. Regarding the XRD curves of the (In,Ga)(As,N) samples, no annealing-induced shift of the envelope is observed. Hence, we conclude that the incorporation of nitrogen suppresses the indium–gallium interdiffusion. Several models are discussed to explain this observation.
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68.35.Fx Diffusion; interface formation
66.30.Ny Chemical interdiffusion; diffusion barriers
68.65.Fg Quantum wells
61.72.Cc Kinetics of defect formation and annealing

Photoluminescence decay dynamics of transparent silica glass prepared from nanometer-sized silica particles

Tomoko Yamada and Takashi Uchino

Appl. Phys. Lett. 87, 081904 (2005); http://dx.doi.org/10.1063/1.2034095 (3 pages) | Cited 9 times

Online Publication Date: 16 August 2005

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The time-resolved photoluminescence (PL) decays are measured for transparent amorphous silica prepared from solid-phase sintering of nanometer-sized silica particles, which has recently been shown to exhibit a unique white PL emission under ultraviolet excitation [ T. Uchino and T. Yamada, Appl. Phys. Lett. 85, 1164 (2004) ]. Unlike usual PL processes observed in normal silica glass, it is shown that the present PL results from trapping-controlled migration of photoexcited carriers and their radiative recombination.
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81.07.Bc Nanocrystalline materials
81.05.Kf Glasses (including metallic glasses)
78.55.Qr Amorphous materials; glasses and other disordered solids
78.67.Bf Nanocrystals, nanoparticles, and nanoclusters
78.47.-p Spectroscopy of solid state dynamics
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
81.20.Ev Powder processing: powder metallurgy, compaction, sintering, mechanical alloying, and granulation

Microfluidic interfacial tensiometry

Steven D. Hudson, João T. Cabral, William J. Goodrum, Kathryn L. Beers, and Eric J. Amis

Appl. Phys. Lett. 87, 081905 (2005); http://dx.doi.org/10.1063/1.2034098 (3 pages) | Cited 18 times

Online Publication Date: 17 August 2005

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A microfluidic approach to measure interfacial tension σ of immiscible fluids rapidly is reported. This method rests upon quantitative real-time analysis of two-phase flow and drop-shape dynamics. Drops of prescribed dimension and spacing are produced, accelerated, and deformed under extensional flow. These measurements compare well with existing published data and demonstrate a wide range of accessible interfacial tension (e.g., from 2.5 to 60 mN/m).
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85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices
68.03.Cd Surface tension and related phenomena
47.55.D- Drops and bubbles
47.55.Kf Particle-laden flows
47.80.-v Instrumentation and measurement methods in fluid dynamics

High hydrogen permeability in the Nb–Zr–Ni eutectic alloy containing the primary body-centered-cubic (Nb, Zr) phase

K. Ishikawa, T. Takano, T. Matsuda, and K. Aoki

Appl. Phys. Lett. 87, 081906 (2005); http://dx.doi.org/10.1063/1.2006985 (3 pages) | Cited 12 times

Online Publication Date: 17 August 2005

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Hydrogen permeability (Φ), i.e., the product of hydrogen diffusion coefficient (D) and hydrogen solubility (K), of the as-cast Nb40Zr30Ni30 (mol %) alloy has been investigated. This alloy is composed of the primary body-centered-cubic (bcc)-(Nb, Zr) and eutectic {(Nb,Zr)+ZrNi} phase and the chemical composition and the volume fraction of the primary phase are Nb89Zr8Ni3 and 40%, respectively. Φ of this alloy increases with increasing temperature and is 4.64×10−8 [mol H2 m−1 s−1 Pa−0.5] at 673 K, which is 2.9 times larger than that of pure Pd. The present work indicates that Φ of the Nb–Zr–Ni alloys increases with increasing the volume fraction of the primary bcc-(Nb, Zr) phase.
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66.30.J- Diffusion of impurities
82.80.-d Chemical analysis and related physical methods of analysis
64.75.-g Phase equilibria

Generation of ultrahigh-frequency tunable acoustic waves

J. D. Choi, T. Feurer, M. Yamaguchi, B. Paxton, and K. A. Nelson

Appl. Phys. Lett. 87, 081907 (2005); http://dx.doi.org/10.1063/1.2032589 (3 pages) | Cited 9 times

Online Publication Date: 18 August 2005

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We demonstrate versatile generation of ultrahigh-frequency, tunable acoustic waves. A novel retroreflection-based pulse shaper is used to generate optical pulse sequences whose frequency is tunable in the 2–2000 GHz range through movement of a single delay line. Multiple-cycle acoustic waves are detected interferometrically at the back of a 15 nm aluminum transducing film and the back of a film-sample-film assembly configured for narrowband acoustic spectroscopy.
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43.58.-e
42.65.Re Ultrafast processes; optical pulse generation and pulse compression

Photoluminescence characterization of midinfrared InNxAs1−x/In0.53Ga0.47As/InP multiquantum wells with various N contents

H. D. Sun, A. H. Clark, S. Calvez, M. D. Dawson, D. K. Shih, and H. H. Lin

Appl. Phys. Lett. 87, 081908 (2005); http://dx.doi.org/10.1063/1.2034119 (3 pages)

Online Publication Date: 19 August 2005

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We report the temperature-dependent photoluminescence characterization of InNxAs1−x/In0.53Ga0.47As/InP multiple quantum wells with various N contents emitting in the midinfrared wavelength range. The emission wavelength in this material system can be tuned by the N content, but the bowing effect is much weaker than in GaNAs. The correlation between the optical properties and the interface quality is demonstrated by examining the barrier-related emission. The role played by N is elucidated by comparing quantum well samples having either zero, low (0.25%) or high (5%) N content.
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73.21.Fg Quantum wells
78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors
78.67.De Quantum wells

Direct evidence of electromigration failure mechanism in dual-damascene Cu interconnect tree structures

A. V. Vairagar, S. G. Mhaisalkar, M. A. Meyer, E. Zschech, Ahila Krishnamoorthy, K. N. Tu, and A. M. Gusak

Appl. Phys. Lett. 87, 081909 (2005); http://dx.doi.org/10.1063/1.2033136 (3 pages) | Cited 9 times

Online Publication Date: 19 August 2005

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In situ secondary electron microscope (SEM) characterizations were carried out to study electromigration failure mechanism in dual-damascene Cu interconnect tree structures, which are important for reliability assessment as well as design optimizations of on-chip interconnects. Direct evidence of electromigration-induced degradation in interconnect tree structure consisting of void nucleation and void movement in opposite direction to electron flow along the Cu/SiNx interface was unraveled. The peculiar electromigration behavior of Cu interconnect tree structures can be clearly understood based on this mechanism. Dependence of electromigration mechanism of a segment in a Cu interconnect tree on current configuration in neighboring interconnect segment is discussed in detail.
Show PACS
85.40.Ls Metallization, contacts, interconnects; device isolation
66.30.Qa Electromigration
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