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Applied Physics Letters / Volume 88 / Issue 1 / DEVICE PHYSICS

Appl. Phys. Lett. 88, 013506 (2006); doi:10.1063/1.2158701 (3 pages)

Surface oxide relationships to band bending in GaN

Michael A. Garcia1, Scott D. Wolter1, Tong-Ho Kim1, Soojeong Choi1, Jamie Baier1, April Brown1, Maria Losurdo2, and Giovanni Bruno2

1Department of Electrical and Computer Engineering, Duke University, Durham, North Carolina 27709
2Institute of Inorganic Methodologies and of Plasmas, IMIP-CNR, and INSTM, via Orabona, 4-70126 Bari, Italy

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(Received 19 September 2005; accepted 30 November 2005; published online 4 January 2006)

A trend of increased near-surface valence band maximum band bending with increasing O/Ga relative fraction was observed, extrapolating to 2.7 eV±0.1 eV for pristine GaN surfaces (0% O 1s peak area). This trend of apparent oxide overlayer coverage affecting the band bending linearly could lead to better understanding and characterization of oxidized GaN surfaces to control band bending for sensors or other devices.

© 2006 American Institute of Physics

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KEYWORDS and PACS

Keywords

gallium compounds, wide band gap semiconductors, valence bands, surface states

PACS

  • 73.20.At

    Surface states, band structure, electron density of states

  • 71.20.Nr

    Semiconductor compounds

ARTICLE DATA

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http://link.aip.org/link/doi/10.1063/1.2158701

PUBLICATION DATA

ISSN:

0003-6951 (print)  
1077-3118 (online)

Publisher:

$abstract.society.value is a Member of CrossRef American Institute of Physics

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