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Applied Physics Letters / Volume 88 / Issue 1 / DEVICE PHYSICS

Appl. Phys. Lett. 88, 013507 (2006); http://dx.doi.org/10.1063/1.2158706 (3 pages)

Strain dependence of Si–Ge interdiffusion in epitaxial Si/Si1−yGey/Si heterostructures on relaxed Si1−xGex substrates

Guangrui Xia1, Oluwamuyiwa O. Olubuyide1, Judy L. Hoyt1, and Michael Canonico2

1Microsystems Technology Laboratories, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139
2Physical Analysis Laboratory Arizona (PALAZ), Freescale Semiconductor, Inc., Tempe, Arizona 85284

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(Received 7 October 2005; accepted 30 November 2005; published online 4 January 2006)

The strain dependence of Si–Ge interdiffusion in epitaxial Si/Si1−yGey/Si heterostructures on relaxed Si1−xGex substrates has been studied using secondary ion mass spectrometry, Raman spectroscopy, and simulations. At 800 and 880 °C, significantly enhanced Si–Ge interdiffusion is observed in Si/Si1−yGey/Si heterostructures (y = 0.56, 0.45, and 0.3) with Si1−yGey layers under compressive strain of −1%, compared to those under no strain. In contrast, tensile strain of 1% in Si0.70Ge0.30 layer has no observable effect on interdiffusion in Si/Si0.70Ge0.30/Si heterostructures. These results are relevant to the device and process design of high mobility dual channel and heterostructure-on-insulator metal oxide semiconductor field effect transistors.

© 2006 American Institute of Physics

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KEYWORDS and PACS

Keywords

Ge-Si alloys, silicon, elemental semiconductors, semiconductor heterojunctions, chemical interdiffusion, internal stresses, secondary ion mass spectra, Raman spectra

PACS

  • 68.35.Fx

    Diffusion; interface formation

  • 78.66.Db

    Elemental semiconductors and insulators

  • 68.60.Bs

    Mechanical and acoustical properties

  • 82.80.Ms

    Mass spectrometry (including SIMS, multiphoton ionization and resonance ionization mass spectrometry, MALDI)

  • 78.30.Hv

    Other nonmetallic inorganics

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.2158706

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
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