APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

6 Mar 2006

Volume 88, Issue 10, Articles (10xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 88, 103107 (2006); http://dx.doi.org/10.1063/1.2182096 (3 pages)

A. B. Djurišić, Y. H. Leung, K. H. Tam, L. Ding, W. K. Ge, H. Y. Chen, and S. Gwo
Enlarge Image | Read More
Return to All Sections
back to top
RSS Feeds

Charge transport across pressure-laminated thin films of molecularly doped polymers

Richard A. Klenkler, Gu Xu, John F. Graham, and Zoran D. Popovic

Appl. Phys. Lett. 88, 102101 (2006); http://dx.doi.org/10.1063/1.2172142 (3 pages) | Cited 3 times

Online Publication Date: 6 March 2006

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Discrete interfaces between successive layers in an organic semiconducting device simplify any examination of interface barriers for charge transport. To form discrete interfaces between organic layers we propose lamination as an alternate approach to physical vapor deposition. Transient photocurrent measurements as a function of pressure, thickness, and electric field were performed on cells of 1,1-bis[(di-4-tolylamino)phenyl]-cyclohexane (TAPC), N,N-bis(3,4-dimethylphenyl)-4-aminobiphenyl (DMPAB), and N,N’-diphenyl-N,N’-bis(3-methylphenyl)-[1,1’-biphenyl]-4,4’-diamine (TPD). It was found that, in the range 0.8–3.0 MPa, a pressure-laminated interface between two identical materials causes no measurable perturbation to charge transport. This justifies the use of pressure lamination to study interfaces between nonidentical layers.
Show PACS
85.30.-z Semiconductor devices
73.61.Ph Polymers; organic compounds
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.50.Pz Photoconduction and photovoltaic effects
62.50.-p High-pressure effects in solids and liquids

Conductivity of single-stranded and double-stranded deoxyribose nucleic acid under ambient conditions: The dominance of water

T. Kleine-Ostmann, C. Jördens, K. Baaske, T. Weimann, M. Hrabe de Angelis, and M. Koch

Appl. Phys. Lett. 88, 102102 (2006); http://dx.doi.org/10.1063/1.2182027 (3 pages) | Cited 27 times

Online Publication Date: 6 March 2006

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We investigate the conductivity of single-stranded and double-stranded herring deoxyribose nucleic acid (DNA) in buffer solution spotted and dried on Au nanocontacts. We find an exponential increase of the conductivity with increasing humidity that is identical for single- and double-stranded DNA within the measurement accuracy. While the small conductivity of dry DNA is comparable to that of a large band-gap semiconductor, we attribute the increase at high humidity levels to water molecules accumulated at the phosphate backbone. For high humidities we observe s-shaped current-voltage characteristics that can be well explained by the dissociation of water attached to the DNA molecules.
Show PACS
87.14.G- Nucleic acids
87.15.R- Reactions and kinetics

Metal–polymer composite with nanostructured filler particles and amplified physical properties

D. Bloor, A. Graham, E. J. Williams, P. J. Laughlin, and D. Lussey

Appl. Phys. Lett. 88, 102103 (2006); http://dx.doi.org/10.1063/1.2183359 (3 pages) | Cited 15 times

Online Publication Date: 7 March 2006

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The limits of conductivity of a novel elastomeric matrix–nanostructured nickel powder composite are reported. The conductivity falls by a factor of ≥ 2×1014 for compression and by a similar amount in extension. Uncompressed and highly compressed composite displays ohmic behavior but between these limits the current-voltage characteristics are highly nonlinear. The matrix intimately coats the filler so that even above the expected percolation threshold the composite has a very low conductivity. The conductivity of the composite is increased under all mechanical deformations. These and other unusual properties are amplified versions of smaller effects seen in composites containing less highly structured fillers.
Show PACS
81.40.Rs Electrical and magnetic properties related to treatment conditions
72.80.Tm Composite materials
81.40.Lm Deformation, plasticity, and creep
62.20.F- Deformation and plasticity

Reactive metal contact at indium–tin–oxide/self-assembled monolayer interfaces

Jeong Ho Cho, Yeong Don Park, Do Hwan Kim, Woong-Kwon Kim, Ho Won Jang, Jong-Lam Lee, and Kilwon Cho

Appl. Phys. Lett. 88, 102104 (2006); http://dx.doi.org/10.1063/1.2183371 (3 pages) | Cited 6 times

Online Publication Date: 8 March 2006

Full Text: Read Online (HTML) | Download PDF

Show Abstract
With the aim of improving the electrical and adhesion properties of the indium–tin–oxide (ITO) electrode/organic interface, we tested Cl- and CF3-terminated self-assembled monolayers (SAMs), which react with the indium atoms of the electrode, and compared the results to those obtained using a CH3-terminated SAM. The contact resistance of the interface between the Cl-terminated surface and the ITO electrode (1.5 kΩ) was found to be much lower than that of the interface between the ITO and the CF3-terminated surface (21.3 kΩ), which can be attributed to the higher dipole moment of the In–Cl complex compared to the In–F complex. In the ITO films deposited on the CH3-terminated surface, the contact resistance (138.0 kΩ) was much higher than those of the reactive metal contacts because the ITO thin film deposited on the CH3-terminated surface does not react with the SAM.
Show PACS
73.40.Cg Contact resistance, contact potential

Random telegraph signal in nanoscale back-side charge trapping memories

H. Silva and S. Tiwari

Appl. Phys. Lett. 88, 102105 (2006); http://dx.doi.org/10.1063/1.2182070 (3 pages) | Cited 1 time

Online Publication Date: 9 March 2006

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Random telegraph signal (RTS) was observed in the front and back channel source-drain current of nanoscale double-gated back-side charge trapping memories. The front gate dielectric is silicon oxide and the back gate dielectric is a stack of silicon oxide–silicon nitride–silicon oxide (ONO). The structure provides a tool for traps characterization at multiple interfaces and combinations of materials. Bias dependence of RTS due to a trap in the back ONO was measured to determine the position of the trap in the dielectric. The results show that the individual trap is located within the tunneling oxide, 1.3 nm away from the silicon interface. RTS due to traps responsible for the memory properties, located in the silicon nitride or its interface, was not observed.
Show PACS
84.30.Sk Pulse and digital circuits
85.30.-z Semiconductor devices

Temperature-dependent strain relaxation of the AlGaN barrier in AlGaN/GaN heterostructures with and without Si3N4 surface passivation

D. J. Chen, K. X. Zhang, Y. Q. Tao, X. S. Wu, J. Xu, R. Zhang, Y. D. Zheng, and B. Shen

Appl. Phys. Lett. 88, 102106 (2006); http://dx.doi.org/10.1063/1.2186369 (3 pages) | Cited 4 times

Online Publication Date: 9 March 2006

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The temperature dependence of strain relaxation in Al0.22Ga0.78N layers, with and without a Si3N4 surface passivation layer, was investigated at temperatures from room temperature to 813 K using high-resolution x-ray diffraction. A small strain relaxation occurs in the unpassivated Al0.22Ga0.78N layers at high temperature. After passivating, an additional in-plane tensile strain and an initial increase of the residual tensile strain with increasing temperature were observed in Al0.22Ga0.78N layers, and at higher temperatures the residual tensile strain only decreases slightly in the 100-nm-thick Al0.22Ga0.78N layer, but a pronounced strain relaxation occurs in the 50-nm-thick one. The degree of strain relaxation of the passivated 50-nm-thick Al0.22Ga0.78N layer increases by about 33%, which results in the two-dimensional electron gas concentration reduction of about 16% at the whole temperature range in our measurements.
Show PACS
68.60.Bs Mechanical and acoustical properties
81.65.Rv Passivation
68.35.Gy Mechanical properties; surface strains

Band-edge electroluminescence from N+-implanted bulk ZnO

Hung-Ta Wang, B. S. Kang, Jau-Jiun Chen, T. Anderson, S. Jang, F. Ren, H. S. Kim, Y. J. Li, D. P. Norton, and S. J. Pearton

Appl. Phys. Lett. 88, 102107 (2006); http://dx.doi.org/10.1063/1.2186508 (3 pages) | Cited 20 times

Online Publication Date: 10 March 2006

Full Text: Read Online (HTML) | Download PDF

Show Abstract
N+ ion implantation at moderate doses (1013–1014 cm−2) into nominally undoped (n ∼ 1017 cm−3) bulk single-crystal ZnO substrates followed by annealing in the range 600–950 °C was used to fabricate diodes that show visible luminescence at 300 K and band-edge electroluminescence at 120 K ( ∼ 390 nm) under forward bias conditions. The current-voltage behavior of the diodes are characteristic of metal-insulator-semiconductor devices and suggest the implantation creates a more resistive region in the n‐ZnO in which holes are created by impact ionization during biasing, similar to the case of electroluminescence in ZnO varistors. The series resistance is only 25 Ω due to the use of the conducting ZnO substrate.
Show PACS
85.30.Kk Junction diodes
85.40.Ry Impurity doping, diffusion and ion implantation technology
85.30.Tv Field effect devices
78.60.Fi Electroluminescence
61.72.Cc Kinetics of defect formation and annealing
Return to All Sections
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close