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6 Mar 2006

Volume 88, Issue 10, Articles (10xxxx)

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Appl. Phys. Lett. 88, 103107 (2006); http://dx.doi.org/10.1063/1.2182096 (3 pages)

A. B. Djurišić, Y. H. Leung, K. H. Tam, L. Ding, W. K. Ge, H. Y. Chen, and S. Gwo
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Observation of difference-frequency generation by mixing of terahertz and near-infrared laser beams in a GaSe crystal

Wei Shi, Yujie J. Ding, Nils Fernelius, and F. Ken Hopkins

Appl. Phys. Lett. 88, 101101 (2006); http://dx.doi.org/10.1063/1.2177363 (3 pages) | Cited 9 times

Online Publication Date: 6 March 2006

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We have observed difference-frequency generation by mixing terahertz and near-infrared laser beams in a GaSe crystal (i.e., terahertz frequency upconversion). This process has a potential for detecting terahertz waves. Using an InGaAs photodiode operating at room temperature the minimum detectable energy per pulse was 9.75 nJ. When a fast photomultiplier tube was used instead, the lowest-energy per pulse was measured to be 245 pJ. In addition, the temporal profile of the terahertz pulses was measured with a ns resolution.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
42.65.Re Ultrafast processes; optical pulse generation and pulse compression

Low-switching-energy and high-repetition-frequency all-optical flip-flop operations of a polarization bistable vertical-cavity surface-emitting laser

Takashi Mori, Yasuhiro Yamayoshi, and Hitoshi Kawaguchi

Appl. Phys. Lett. 88, 101102 (2006); http://dx.doi.org/10.1063/1.2181192 (3 pages) | Cited 33 times

Online Publication Date: 6 March 2006

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Subfemtojoule polarization bistable switching in a vertical-cavity surface-emitting laser (VCSEL) is experimentally demonstrated. All-optical flip-flop operation of the VCSEL was performed using two orthogonally polarized injection light pulses. The optimum wavelengths of the two injection pulses for achieving minimum switching power were different and corresponded to the lasing wavelengths of the two polarization states of the laser. The pulse width/switching frequency dependence of the injection pulses showed that a minimum switching energy was obtained at 1 ns/500 MHz. A record low switching energy of 0.3 fJ has been achieved as well as a record high switching frequency of 10 GHz.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.65.Re Ultrafast processes; optical pulse generation and pulse compression
42.65.Pc Optical bistability, multistability, and switching, including local field effects

In situ monitoring of GaN epitaxial lateral overgrowth by spectroscopic reflectometry

C. Liu, S. Stepanov, P. A. Shields, A. Gott, W. N. Wang, E. Steimetz, and J.-T. Zettler

Appl. Phys. Lett. 88, 101103 (2006); http://dx.doi.org/10.1063/1.2182013 (3 pages) | Cited 1 time

Online Publication Date: 6 March 2006

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The application of spectroscopic reflectometry to the monitoring of epitaxial lateral overgrowth of GaN in low pressure metalorganic vapor phase epitaxy has been investigated. Real-time vertical and lateral growth rates and hence thickness and wing width of the growing GaN are extracted. A vertical growth enhancement was clearly observed at an early stage, followed by vertical growth suppression until full coalescence was achieved. The lateral to vertical growth ratio was obtained showing clear time dependent characteristics. The observations were explained by considering the mass transport between the growing (0001) facets and the {11math0} sidewall facets.
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81.05.Ea III-V semiconductors
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.15.Kk Vapor phase epitaxy; growth from vapor phase
68.55.A- Nucleation and growth
78.66.Fd III-V semiconductors

Highly efficient white-light-emitting diodes fabricated with short-wavelength yellow oxynitride phosphors

Rong-Jun Xie, Naoto Hirosaki, Mamoru Mitomo, Kosei Takahashi, and Ken Sakuma

Appl. Phys. Lett. 88, 101104 (2006); http://dx.doi.org/10.1063/1.2182067 (3 pages) | Cited 88 times

Online Publication Date: 6 March 2006

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We have already reported orangish yellow Ca–α-SiAlON:Eu2+ phosphors, and applied them to fabricate warm white light-emitting diodes (LEDs). In this letter, we report on greenish yellow Li–α-SiAlON:Eu2+ phosphors, and use them to create daylight when coupled to an InGaN blue LED chip (460 nm). The newly discovered Li–α-SiAlON:Eu2+ phosphors emit at shorter wavelengths of 573–577 nm under the 460 nm excitation, and exhibit a smaller Stokes shift than Ca–α-SiAlON:Eu2+ does. By using this short-wavelength yellow oxynitride phosphor, bright daylight emissions from white LEDs can be generated. Thus, highly efficient white LEDs with tunable white light can be fabricated with α-SiAlON:Eu2+ phosphors, enabling them for a wider range of applications.
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85.60.Jb Light-emitting devices
78.60.Fi Electroluminescence

Lasing in an intermediate twisted phase between cholesteric and smectic A phase

Andro Chanishvili, Guram Chilaya, Gia Petriashvili, Riccardo Barberi, Maria P. De Santo, Mario A. Matranga, and Federica Ciuchi

Appl. Phys. Lett. 88, 101105 (2006); http://dx.doi.org/10.1063/1.2183822 (3 pages) | Cited 7 times

Online Publication Date: 7 March 2006

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This work describes the observation of lasing in an intermediate chiral phase of a dye-doped cholesteric liquid crystal mixture. This intermediate phase exists between cholesteric and smectic A phase and it presents anomalous selective reflection properties. The lasing was observed at the long-wavelength edge of the photonic band gap.
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42.55.-f Lasers
42.70.Hj Laser materials
42.70.Df Liquid crystals
61.30.-v Liquid crystals
42.70.Qs Photonic bandgap materials

Nonlinear dynamics accompanying polarization switching in vertical-cavity surface-emitting lasers with orthogonal optical injection

I. Gatare, M. Sciamanna, J. Buesa, H. Thienpont, and K. Panajotov

Appl. Phys. Lett. 88, 101106 (2006); http://dx.doi.org/10.1063/1.2181649 (3 pages) | Cited 25 times

Online Publication Date: 8 March 2006

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We present an experimental investigation of a vertical-cavity surface-emitting laser (VCSEL) submitted to orthogonal optical injection, i.e., the injected light is linearly polarized and orthogonal to that emitted by the solitary VCSEL. Bifurcation boundaries of qualitatively different dynamics are mapped out in the frequency detuning-injection strength plane. We unveil rich and complex dynamics including injection locking, limit cycle, wave mixing, and period doubling route to chaos.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Fc Modulation, tuning, and mode locking
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.65.Sf Dynamics of nonlinear optical systems; optical instabilities, optical chaos and complexity, and optical spatio-temporal dynamics

Liquid-crystal-based terahertz tunable Lyot filter

Chao-Yuan Chen, Ci-Ling Pan, Cho-Fan Hsieh, Yea-Feng Lin, and Ru-Pin Pan

Appl. Phys. Lett. 88, 101107 (2006); http://dx.doi.org/10.1063/1.2181271 (3 pages) | Cited 31 times

Online Publication Date: 8 March 2006

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A two-element tunable Lyot filter operating in the terahertz (THz) frequency range is demonstrated. The central bandpass frequency of the filter can be continuously tuned from 0.388 to 0.564 THz (a fractional tuning range of 40%) using magnetically controlled birefringence in nematic liquid crystals. The transmission bandwidth is 0.1 THz and the insertion loss of the present device is 8 dB due to the scattering of LC molecules in the thick LC cells. This filter can be operated at room temperature.
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42.79.Kr Display devices, liquid-crystal devices
84.40.-x Radiowave and microwave (including millimeter wave) technology
42.79.Ci Filters, zone plates, and polarizers

Negative feedback optical amplification effect based on cross-gain modulation in semiconductor optical amplifiers

Yoshinobu Maeda

Appl. Phys. Lett. 88, 101108 (2006); http://dx.doi.org/10.1063/1.2183748 (3 pages) | Cited 2 times

Online Publication Date: 8 March 2006

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A negative feedback optical amplification effect was confirmed using negative feedback based on cross-gain modulation in an InGaAsP/InP semiconductor optical amplifier. The optical amplifier with negative feedback was capable of providing an output signal whose gain, wave form and baseline, were stabilized optically. The distortion of the wave form was extremely small in a wide frequency band of 0.1–10 GHz. In addition, the gain can be adjusted by controlling the amount of negative feedback power using a variable optical attenuator. In physics, the optical amplifier is considered as the optical equivalent of a noninverting operational amplifier in electronics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.60.Fc Modulation, tuning, and mode locking

Fabricating subwavelength array structures using a near-field photolithographic method

Wei-Lun Chang, Yu-Jen Chang, Pei-Kuen Wei, and Pei Hsi Tsao

Appl. Phys. Lett. 88, 101109 (2006); http://dx.doi.org/10.1063/1.2185249 (3 pages) | Cited 1 time

Online Publication Date: 9 March 2006

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This work presents a photolithographic approach for producing high aspect ratio arrays in photoresist. The photomask is composed of hexagonal/square rod arrays with a thickness of 0.2 μm and a period of 600 nm. Illuminating the photomask with a blue laser generates periodically focused beams up to 1 μm long and less than 300 nm wide. A hexagonal rod array provides a better focused beam than a square array due to its higher symmetry. Finite-difference time-domain calculations elucidate the existence of long focused beams above the photomask. Optical near-field measurements verified those subwavelength beams originating from the rod regions.
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42.82.Cr Fabrication techniques; lithography, pattern transfer
42.82.Et Waveguides, couplers, and arrays
02.70.Bf Finite-difference methods

Mode locking of lateral modes in broad-area semiconductor lasers by subharmonic optical pulse injection

Joachim Kaiser, Ingo Fischer, and Wolfgang Elsässer

Appl. Phys. Lett. 88, 101110 (2006); http://dx.doi.org/10.1063/1.2185252 (3 pages)

Online Publication Date: 9 March 2006

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We generate stable mode-locking of different lateral modes in broad-area semiconductor lasers (BALs) by local injection of short optical pulses repeated at subharmonics of the lateral mode separation. The locking results in a persistent, periodic spatiotemporal dynamics consisting of a laterally alternating intensity modulation with a repetition rate of 3.4 GHz, which can be regarded as an enhancement and stabilization of the spontaneous dynamic filamentation that is frequently observed in free running BALs.
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42.60.Fc Modulation, tuning, and mode locking
42.55.Px Semiconductor lasers; laser diodes
42.65.Re Ultrafast processes; optical pulse generation and pulse compression
42.65.Sf Dynamics of nonlinear optical systems; optical instabilities, optical chaos and complexity, and optical spatio-temporal dynamics

Ge on Si p-i-n photodiodes operating at 10 Gbit/s

Lorenzo Colace, Michele Balbi, Gianlorenzo Masini, Gaetano Assanto, Hsin-Chiao Luan, and Lionel C. Kimerling

Appl. Phys. Lett. 88, 101111 (2006); http://dx.doi.org/10.1063/1.2182110 (3 pages) | Cited 32 times

Online Publication Date: 9 March 2006

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We report on fast p-i-n photodetectors operating in the near infrared and realized in pure germanium on silicon. The diodes were fabricated by chemical vapor deposition at 600 °C without affecting the crystal quality and allowing the integration with standard silicon processes. We demonstrate responsivities of 0.4 and 0.2 A/W at 1.3 and 1.55 μm, respectively, as well as operation at 10 Gbit/s.
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85.60.Dw Photodiodes; phototransistors; photoresistors
85.60.Gz Photodetectors (including infrared and CCD detectors)

Systematic study of the size and spacing dependence of Ag nanoparticle enhanced fluorescence using electron-beam lithography

T. D. Corrigan, S.-H. Guo, H. Szmacinski, and R. J. Phaneuf

Appl. Phys. Lett. 88, 101112 (2006); http://dx.doi.org/10.1063/1.2176862 (3 pages) | Cited 13 times

Online Publication Date: 10 March 2006

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We study the enhancement of fluorescence by Ag nanopillars on a semiconducting substrate in which the pillar size, shape, and spacing is varied systematically using electron-beam lithography. Local maxima in the enhancement versus lateral size, as large as a factor of ∼ 20 are observed, and vary both with the shape of the pillars and the wavelength of the excitation. We find that the size, shape, and spacing dependence is in qualitative agreement with a model based upon resonant coupling with particle plasmon polaritons. We also find increased enhancement for particle shapes producing high local electric fields.
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78.55.Hx Other solid inorganic materials
61.46.-w Structure of nanoscale materials
81.16.Nd Micro- and nanolithography
71.45.Gm Exchange, correlation, dielectric and magnetic response functions, plasmons
71.36.+c Polaritons (including photon-phonon and photon-magnon interactions)

Corner-pumped Yb: yttrium aluminum garnet slab laser emitted up to 1 kW

Qiang Liu, Mali Gong, Fuyuan Lu, Wupeng Gong, Chen Li, and Dongdong Ma

Appl. Phys. Lett. 88, 101113 (2006); http://dx.doi.org/10.1063/1.2186740 (3 pages) | Cited 12 times

Online Publication Date: 10 March 2006

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We have developed a slab laser design based on conduction cooling and a novel pumping geometry called corner pumping. The design uses a slab crystal configuration with the pump light incident from the slab corners. A maximum output power of over 1 kW was achieved from a 1 mm thick Yb:YAG/YAG (YAG = yttrium aluminum garnet) structure with a 0.5 at. %-doped Yb:YAG. The slope efficiency and optical-to-optical efficiency with respect to the total pump power were 42.8% and 33.6%, respectively. At this pump power the electrical-to-optical conversion efficiency of the system was 16.8%.
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42.60.By Design of specific laser systems
42.55.Rz Doped-insulator lasers and other solid state lasers

Translational velocity measurement for single floating cell based on optical Fourier transform theory

Katsumi Ishizaki, Ichirou Ishimaru, Makoto Yoshida, Yusuke Inoue, Toshiki Yasokawa, Shigeki Kuriyama, Tsutomu Masaki, Seiji Nakai, Kaoru Takegawa, and Naotaka Tanaka

Appl. Phys. Lett. 88, 101114 (2006); http://dx.doi.org/10.1063/1.2183747 (2 pages) | Cited 7 times

Online Publication Date: 10 March 2006

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This letter reports on translational velocity measurement, which is needed for tracking a low contrast cell. We propose a new optical spatial filtering method that is based on the optical Fourier transform theory. In this method, a pinhole is installed as a spatial filter on the optical Fourier transform plane. By means of this spatial filter, the arbitrary component of the spatial frequency is derived from the random refractive index distribution as the periodic light intensity distribution. By observing the changes of this light intensity, we can obtain the translational velocity of a low-contrast cell by means of a high-response photodiode.
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87.80.-y Biophysical techniques (research methods)
87.64.-t Spectroscopic and microscopic techniques in biophysics and medical physics
87.17.Jj Cell locomotion, chemotaxis
42.30.Kq Fourier optics
42.79.Ci Filters, zone plates, and polarizers
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