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20 Mar 2006

Volume 88, Issue 12, Articles (12xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 88, 122510 (2006); http://dx.doi.org/10.1063/1.2186947 (3 pages)

P. Martín Pimentel, S. J. Hermsdoerfer, H. T. Nembach, B. Leven, B. Hillebrands, S. Trellenkamp, and S. Wolff
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Photonic band-gap structures of core-shell simple cubic crystals from holographic lithography

Jun Hyuk Moon, Shu Yang, and Seung-Man Yang

Appl. Phys. Lett. 88, 121101 (2006); http://dx.doi.org/10.1063/1.2187438 (3 pages) | Cited 12 times

Online Publication Date: 20 March 2006

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We report the investigation of photonic band-gap properties of a core-shell simple cubic structure (air core with a dielectric shell) using a two-parameter level-set approach. The proposed structure can be obtained by partially backfilling high refractive index materials into a polymeric template fabricated by multibeam interference lithography. We find that the shell formation in the inverted simple cubic structure increases the complete photonic band-gap width by 10%–20% in comparison to that of a completely filled structure. The band gap between the fifth and sixth bands begins to appear at a refractive index contrast of 2.7. This study suggests the importance to investigate the core-shell formation in three-dimensional photonic crystals through backfilling, which may offer an additional control over their photonic band-gap properties.
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42.70.Qs Photonic bandgap materials
42.40.Kw Holographic interferometry; other holographic techniques
42.86.+b Optical workshop techniques
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

High-detectivity quantum-dot infrared photodetectors grown by metalorganic chemical-vapor deposition

J. Szafraniec, S. Tsao, W. Zhang, H. Lim, M. Taguchi, A. A. Quivy, B. Movaghar, and M. Razeghi

Appl. Phys. Lett. 88, 121102 (2006); http://dx.doi.org/10.1063/1.2188056 (3 pages) | Cited 14 times

Online Publication Date: 20 March 2006

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A mid-wavelength infrared photodetector based on InGaAs quantum dots buried in an InGaP matrix and deposited on a GaAs substrate was demonstrated. Its photoresponse at T = 77 K was measured to be around 4.7 μm with a cutoff at 5.5 μm. Due to the high peak responsivity of 1.2 A/W and low dark-current noise of the device, a specific peak detectivity of 1.1×1012 cm Hz1/2 W−1 was achieved at −0.9 V bias.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
85.30.-z Semiconductor devices

Tunable stop-band hollow waveguide Bragg reflectors with tapered air core for adaptive dispersion-compensation

Yasuki Sakurai, Akihiro Matsutani, and Fumio Koyama

Appl. Phys. Lett. 88, 121103 (2006); http://dx.doi.org/10.1063/1.2188592 (3 pages) | Cited 6 times

Online Publication Date: 20 March 2006

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We propose a tunable stop-band hollow waveguide Bragg reflector with a variable tapered air core for an adjustable dispersion-compensation device. The tapered air-core structure gives us chirped Bragg reflection. The precise control of tapered air-core thickness and angle enables us to achieve the dynamic tuning of both stop-band width and center wavelength of Bragg reflection. We demonstrate center-wavelength tuning of 20.1 nm corresponding to 1.3% of propagation constant change and stop-band expansion up to 5 nm. Also, we demonstrate dispersion tuning operation either in negative or positive dispersion ranges with delay-time difference of about 10 ps.
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42.79.Sz Optical communication systems, multiplexers, and demultiplexers
42.79.Gn Optical waveguides and couplers
42.79.Bh Lenses, prisms and mirrors
42.81.Dp Propagation, scattering, and losses; solitons
42.79.Dj Gratings

Coherent 5.35 μm surface emission from a GaAs-based distributed feedback quantum-cascade laser

M. Austerer, C. Pflügl, S. Golka, W. Schrenk, A. M. Andrews, T. Roch, and G. Strasser

Appl. Phys. Lett. 88, 121104 (2006); http://dx.doi.org/10.1063/1.2186985 (3 pages) | Cited 10 times

Online Publication Date: 20 March 2006

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We present second-harmonic surface emission from distributed feedback GaAs/AlGaAs quantum-cascade lasers with integrated intersubband nonlinearities. The devices show single mode fundamental and second-harmonic emission at wavelengths of 10.7 and 5.35 μm, respectively. Only 5.35 μm light is emitted from the surface, as the fundamental light is not coupling to radiating modes for the grating of our choice. The second-harmonic peak optical power via the surface at 78 K is 150 μW for a fundamental peak power of 1.1 W.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation

Efficient generation of green and UV light in a single PP-KTP waveguide pumped by a compact all-fiber system

M. Rusu, E. U. Rafailov, R. Herda, O. G. Okhotnikov, S. M. Saltiel, P. Battle, S. McNeil, A. B. Grudinin, and W. Sibbett

Appl. Phys. Lett. 88, 121105 (2006); http://dx.doi.org/10.1063/1.2187396 (3 pages) | Cited 4 times

Online Publication Date: 20 March 2006

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We present simultaneous efficient second- (SHG) and third-harmonic generation (THG) in a single periodically-poled KTP waveguided crystal pumped by a compact femtosecond Yb-based laser in a condition of exactly phase-matched frequency doubling and nonphase-matched sum-frequency mixing processes. Internal conversion efficiency as high as 33% for SHG (532 nm) and ∼ 2% for the cascaded THG (355 nm) is reported. We believe this to be a clear experimental demonstration that strong third-harmonic can be generated in frequency doubling crystals through a nonphase-matched sum-frequency mixing process.
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42.55.Rz Doped-insulator lasers and other solid state lasers
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation

Optical power degradation mechanisms in AlGaN-based 280 nm deep ultraviolet light-emitting diodes on sapphire

Z. Gong, M. Gaevski, V. Adivarahan, W. Sun, M. Shatalov, and M. Asif Khan

Appl. Phys. Lett. 88, 121106 (2006); http://dx.doi.org/10.1063/1.2187429 (3 pages) | Cited 14 times

Online Publication Date: 21 March 2006

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We present a study of reliability of AlGaN-based 280 nm deep ultraviolet light-emitting diodes on sapphire substrate grown by migration-enhanced metal-organic chemical vapor deposition. Two modes of optical power degradation were observed: catastrophic and gradual. The catastrophic degradation is believed to be due to metal alloying at macroscopic defects in the top p layers of the light-emitting diode structure. For the gradual power degradation, two time constants were determined, which were temperature and bias dependent. For the temperature-dependent part, the values of the activation energies and room-temperature degradation rates at dc currents of 10 and 20 mA were determined to be 0.23 and 0.27 eV and 1.31×10−3 and 5.93×10−3 h−1, respectively.
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85.60.Jb Light-emitting devices
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Low-temperature-sensitivity heterostructure photonic-crystal wavelength-selective filter based on ultralow-refractive-index metamaterials

Nikolaos Ioannou Florous, Kunimasa Saitoh, Masanori Koshiba, and Maksim Skorobogatiy

Appl. Phys. Lett. 88, 121107 (2006); http://dx.doi.org/10.1063/1.2188055 (3 pages) | Cited 3 times

Online Publication Date: 21 March 2006

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We propose and numerically investigate the thermal-insensitive properties of a wavelength-selective filter based on heterostructure photonic crystals with ultralow-refractive-index metallic nanowires. The operational principle of the proposed device is based on the photon trapping by total external reflections between the ultralow refractive index metamaterial claddings and the guiding air cores. The low propagation losses, the ultracompact size as well as the temperature-insensitive operation are the main advantages of the proposed metamaterial technology, making the proposed de-multiplexer an excellent candidate for applications in nanophotonic-integrated systems operating in the visible frequency spectrum.
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42.82.Gw Other integrated-optical elements and systems
42.79.Ci Filters, zone plates, and polarizers
42.70.Qs Photonic bandgap materials

Three-dimensional integration of metal-oxide-semiconductor transistor with subterranean photonics in silicon

Tejaswi Indukuri, Prakash Koonath, and Bahram Jalali

Appl. Phys. Lett. 88, 121108 (2006); http://dx.doi.org/10.1063/1.2184754 (3 pages) | Cited 5 times

Online Publication Date: 21 March 2006

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Monolithic integration of photonics and electronics has been achieved in silicon by three-dimensionally integrating metal-oxide-semiconductor field-effect transistors and waveguide-coupled microdisk resonators. Implantation of oxygen ions into a silicon-on-insulator substrate with a patterned thermal oxide mask followed by a high temperature anneal was utilized to realize the buried photonic structures. This results in the formation of vertically stacked silicon layers separated from each other by an intervening oxide layer. Transistors are fabricated on the surface silicon by conventional processing techniques. Optical and electronic functionalities are thus separated into two different layers of silicon, paving the way toward dense three-dimensional optoelectronic integration.
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85.60.-q Optoelectronic devices
85.30.Tv Field effect devices
85.40.Ry Impurity doping, diffusion and ion implantation technology
42.82.Et Waveguides, couplers, and arrays

Broadband 6 μm<λ<8 μm superluminescent quantum cascade light-emitting diodes

E. A. Zibik, W. H. Ng, D. G. Revin, L. R. Wilson, J. W. Cockburn, K. M. Groom, and M. Hopkinson

Appl. Phys. Lett. 88, 121109 (2006); http://dx.doi.org/10.1063/1.2188371 (3 pages) | Cited 6 times

Online Publication Date: 21 March 2006

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Midinfrared emission from intersubband superluminescent light-emitting diodes is reported. We have obtained broadband emission spectra at around 7 μm with a full width at half maximum of ∼ 2 μm, using quantum-cascade-laser active regions designed to emit at 11 different wavelengths simultaneously. By introducing additional mirror loss in the Fabry–Perot resonator using just a single cleaved facet, with the other mirror formed by wet etching, the laser threshold current is significantly increased and superlinear light-current characteristics are observed. Optical peak powers of several tens of μW are measured at low temperatures.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
85.60.Jb Light-emitting devices
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Monolithic polymer microcavity lasers with on-top evaporated dielectric mirrors

Luana Persano, Pompilio Del Carro, Elisa Mele, Roberto Cingolani, Dario Pisignano, Margherita Zavelani-Rossi, Stefano Longhi, and Guglielmo Lanzani

Appl. Phys. Lett. 88, 121110 (2006); http://dx.doi.org/10.1063/1.2179611 (3 pages) | Cited 12 times

Online Publication Date: 22 March 2006

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We report on a monolithic polymeric microcavity laser with all dielectric mirrors realized by low-temperature electron-beam evaporation. The vertical heterostructure was realized by 9.5 TiOx/SiOx pairs evaporated onto an active conjugated polymer, that was previously spincast onto the bottom distributed Bragg reflector (DBR). The cavity supports single-mode lasing at 509 nm, with a linewidth of 1.8 nm, and a lasing threshold of 84 μJ/cm2. We also report on the emission properties of the polymer we used, investigated by a pump-probe technique. These results show that low-temperature electron-beam evaporation is a powerful and straightforward fabrication technique for molecular-based fully integrable microcavity resonators.
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42.55.Sa Microcavity and microdisk lasers
42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
85.60.-q Optoelectronic devices
42.82.Bq Design and performance testing of integrated-optical systems
42.82.Cr Fabrication techniques; lithography, pattern transfer

Near-field scanning optical microscopy with an active probe

Qiaoqiang Gan, Guofeng Song, Guohua Yang, Yun Xu, Jianxia Gao, Yuzhang Li, Qing Cao, Lianghui Chen, Haiwei Lu, Zhonghao Chen, Wei Zeng, and Rongjin Yan

Appl. Phys. Lett. 88, 121111 (2006); http://dx.doi.org/10.1063/1.2189015 (3 pages) | Cited 9 times

Online Publication Date: 22 March 2006

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A near-field scanning optical microscopy (NSOM) system employing a very-small-aperture laser (VSAL) as an active probe is reported in this Letter. The VSAL in our experiment has an aperture size of 300 nm×300 nm and a near-field spot size of about 600 nm. The resolution of the NSOM system with the VSAL can reach about 600 nm, and even 400 nm. Considering the high output power of the VSAL, such a NSOM system is a potentially useful tool for nanodetection, data storage, nanolithography, and nanobiology.
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07.79.Fc Near-field scanning optical microscopes
42.62.Eh Metrological applications; optical frequency synthesizers for precision spectroscopy
07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing

High-quality AlN/GaN-superlattice structures for the fabrication of narrow-band 1.4 μm photovoltaic intersubband detectors

Daniel Hofstetter, Esther Baumann, Fabrizio R. Giorgetta, Marcel Graf, Manfred Maier, Fabien Guillot, Edith Bellet-Amalric, and Eva Monroy

Appl. Phys. Lett. 88, 121112 (2006); http://dx.doi.org/10.1063/1.2185613 (3 pages) | Cited 37 times

Online Publication Date: 22 March 2006

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We report on high-quality short-period superlattices in the AlN/GaN material system. Thanks to significant advances in the epitaxial growth, up to 40 superlattice periods with a total layer thickness of 120 nm could be grown without cracking problems. Given an intersubband transition energy on the order of 910 meV, these superlattices could be used as room temperature, narrow-band, photovoltaic detectors for wavelengths around 1.4 μm. In photovoltaic operation, the full width at half maximum is as narrow as 90 meV, underlining the high quality of the interfaces and the single layers in our structures.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
85.30.-z Semiconductor devices

Temperature dependence of exciton localization dynamics in InxGa1−xN epitaxial films

Yoshihiko Kanemitsu, Koichi Tomita, Daisuke Hirano, and Hideyuki Inouye

Appl. Phys. Lett. 88, 121113 (2006); http://dx.doi.org/10.1063/1.2187954 (3 pages) | Cited 8 times

Online Publication Date: 22 March 2006

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We have studied the temperature dependence of exciton localization dynamics in InxGa1−xN epitaxial films (x = 0.09) by means of optical Kerr-gate time-resolved photoluminescence (PL) spectral measurements. During 30 ps after 150 fs laser excitation, the PL dynamics is sensitive to the measurement temperature. In the temperature range of 6–50 K, the PL rise time decreases and the PL peak energy shifts to higher energy with an increase of temperature. At high temperatures above 80 K, the thermal quenching of the PL at shallow localized states occurs. The energy relaxation processes of excitons in localized states of InxGa1−xN films are discussed.
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78.66.Fd III-V semiconductors
71.35.-y Excitons and related phenomena
78.47.-p Spectroscopy of solid state dynamics
78.55.Cr III-V semiconductors
78.20.N- Thermo-optic effects
78.20.nb Photothermal effects
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation

Metalorganic vapor phase epitaxy grown InGaN/GaN light-emitting diodes on Si(001) substrate

F. Schulze, A. Dadgar, J. Bläsing, A. Diez, and A. Krost

Appl. Phys. Lett. 88, 121114 (2006); http://dx.doi.org/10.1063/1.2188383 (3 pages) | Cited 19 times

Online Publication Date: 22 March 2006

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We present GaN-based light emitting diode structures on a Si(001) substrate. The 2.3 μm thick, crack-free layers were grown by metalorganic vapor phase epitaxy using a high-temperature AlN seed layer and 4° off-oriented substrates. This allows us to grow a flat, fully coalesced, and single crystalline GaN layer on Si(001). For preventing crack formation, four AlN interlayers were inserted in the buffer structure. The optically active layers consist of five-fold InGaN/GaN multiple quantum wells showing a bright electroluminescence at 490 nm at room temperature. The crystallographic structure was analyzed by x-ray diffraction measurements and the optical properties were determined by photo- and electroluminescence.
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85.60.Jb Light-emitting devices
81.05.Ea III-V semiconductors
81.07.St Quantum wells
81.15.Kk Vapor phase epitaxy; growth from vapor phase
78.67.De Quantum wells
78.60.Fi Electroluminescence

Fabrication of genuine single-quantum-dot light-emitting diodes

R. Schmidt, U. Scholz, M. Vitzethum, R. Fix, C. Metzner, P. Kailuweit, D. Reuter, A. Wieck, M. C. Hübner, S. Stufler, A. Zrenner, S. Malzer, and G. H. Döhler

Appl. Phys. Lett. 88, 121115 (2006); http://dx.doi.org/10.1063/1.2188057 (3 pages) | Cited 24 times

Online Publication Date: 23 March 2006

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We present a simple approach for the fabrication of genuine single quantum-dot light-emitting diodes. A submicron wide bottom contact stripe is formed by focused ion beam implantation doping into a GaAs buffer layer. Successive overgrowth with a thin intrinsic layer incorporating self-assembled InAs quantum dots, followed by a top contact layer of complementary doping type and standard photolithographic processing, allows for electrical cross sections in the sub-μm2 range. In devices with sufficiently low dot densities, only one single dot is expected to be electrically addressed. Both the observed current versus voltage characteristics and the evolution of the electroluminescence spectra as a function of applied voltage clearly demonstrate that this goal has been achieved.
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85.60.Jb Light-emitting devices
61.72.uj III-V and II-VI semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Modulated optical sieve for sorting of polydisperse microparticles

I. Ricárdez-Vargas, P. Rodríguez-Montero, R. Ramos-García, and K. Volke-Sepúlveda

Appl. Phys. Lett. 88, 121116 (2006); http://dx.doi.org/10.1063/1.2183357 (3 pages) | Cited 22 times

Online Publication Date: 23 March 2006

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We present an all-optical technique that permits sorting within a polydisperse sample of microparticles in the absence of any microfluidic flow. We can sort colloidal samples based on their size and their refractive index. We show experimental and theoretical data for this method. It is based on the specific response of different microparticles to an interference pattern of fringes vibrating with an asymmetric time modulation. The size selectivity arises from the spatial fringe periodicity whereas selection based on refractive index is controlled by the beam power.
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07.60.-j Optical instruments and equipment
82.70.Dd Colloids

Spatiotemporal quantum manipulation of traveling light: Quantum transport

B. S. Ham

Appl. Phys. Lett. 88, 121117 (2006); http://dx.doi.org/10.1063/1.2188599 (3 pages) | Cited 4 times

Online Publication Date: 23 March 2006

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A method of quantum transport between quantum nodes using stationary lights is presented. The quantum transport of a single photon or a quantum state from one node to another is performed by a slow light phenomenon, where the transport time and path between nodes are classically determined. With both no-mirror-cavity characteristics of the stationary light and propagation velocity control of the slow light, the quantum transport has potential applications in quantum information sciences such as type-II quantum computing and quantum communications.
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42.50.-p Quantum optics
03.67.Mn Entanglement measures, witnesses, and other characterizations
42.65.Sf Dynamics of nonlinear optical systems; optical instabilities, optical chaos and complexity, and optical spatio-temporal dynamics
03.65.-w Quantum mechanics
03.67.Lx Quantum computation architectures and implementations
03.67.Hk Quantum communication

Photovoltaic effect in a periodically poled lithium niobate Solc-type wavelength filter

Lijun Chen, Jianhong Shi, Xianfeng Chen, and Yuxing Xia

Appl. Phys. Lett. 88, 121118 (2006); http://dx.doi.org/10.1063/1.2187944 (3 pages) | Cited 10 times

Online Publication Date: 23 March 2006

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We report a non-field-applied Solc-type filter constructed by a periodically poled lithium niobate (PPLN). By comparing two types of PPLN Solc filter setup, both theoretically and experimentally, we have proved that without external field applied, it is the photovoltaic effect that introduces pass peak in the PPLN band filter.
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42.79.Ci Filters, zone plates, and polarizers
72.40.+w Photoconduction and photovoltaic effects

External cavity InAs/InP quantum dot laser with a tuning range of 166 nm

G. Ortner, C. Ni. Allen, C. Dion, P. Barrios, D. Poitras, D. Dalacu, G. Pakulski, J. Lapointe, P. J. Poole, W. Render, and S. Raymond

Appl. Phys. Lett. 88, 121119 (2006); http://dx.doi.org/10.1063/1.2187431 (3 pages) | Cited 18 times

Online Publication Date: 24 March 2006

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We have studied the tuning behavior of an external cavity laser in Littrow configuration using antireflection/high-reflection coated InAs/InGaAsP/InP quantum dot laser diodes as the amplifying element. Adding the coatings improves the performance of the setup, and the tunability of the external cavity laser output has been increased up to 166 nm. Detailed investigations have revealed that laser diode length and width influence the magnitude of the tuning range. Furthermore, the external differential quantum efficiency is systematically increasing as the external cavity laser wavelength is decreasing. These characteristics are discussed in terms of energy levels available in the inhomogeneous broadening of the self-assembled quantum dots.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.Fc Modulation, tuning, and mode locking

Experimental evidence for the role of Xe2+ in pumping the Ar–Xe infrared laser

J. P. Apruzese, J. L. Giuliani, M. F. Wolford, J. D. Sethian, G. M. Petrov, D. D. Hinshelwood, M. C. Myers, D. M. Ponce, F. Hegeler, and Ts. Petrova

Appl. Phys. Lett. 88, 121120 (2006); http://dx.doi.org/10.1063/1.2188038 (3 pages) | Cited 4 times

Online Publication Date: 24 March 2006

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In a series of experiments on the Naval Research Laboratory's Electra generator, we have measured the dependence of the laser output in the principal (1.733 μm) transition of the Ar–Xe laser upon both initial gas temperature and Xe concentration. The data show that the laser output is less sensitive to gas temperature when the laser gas contains more Xe. The destruction rate of the molecular ion ArXe+ increases rapidly with gas temperature, but that of Xe2+ does not. Interpreted with a kinetics model, these data indicate that both Xe2+ and ArXe+ contribute to the pumping of the ArXe laser.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.By Design of specific laser systems

Erbium luminescence imaging of infrared surface plasmon polaritons

E. Verhagen, A. L. Tchebotareva, and A. Polman

Appl. Phys. Lett. 88, 121121 (2006); http://dx.doi.org/10.1063/1.2189188 (3 pages) | Cited 5 times

Online Publication Date: 24 March 2006

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We demonstrate a new technique to spatially map the propagation and damping of infrared surface plasmon polaritons (SPPs) on metal films using optically active erbium ions as a probe of the SPP field. The bound SPP mode propagating along the Ag/glass interface of a 96 nm thick Ag film on glass is excited by illuminating a subwavelength hole array in the metal with 1.49 μm light. By imaging the 1.53 μm photoluminescence of Er ions positioned in the glass at a distance of 60 nm from the Ag/glass interface in a confocal microscope, a SPP beam was observed to propagate along a broad stripe waveguide, with a characteristic propagation length of 76 μm. This technique provides a useful tool to study the characteristics of SPP modes at metal-dielectric interfaces in a wide range of geometries.
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78.55.Hx Other solid inorganic materials
78.68.+m Optical properties of surfaces
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
71.36.+c Polaritons (including photon-phonon and photon-magnon interactions)
78.66.Bz Metals and metallic alloys
42.82.Et Waveguides, couplers, and arrays

Photoluminescence decay characteristics of an oxide-confined vertical-cavity surface-emitting laser

Florencio D. Recoleto, Jennette N. Mateo, Mariel Grace S. Dimamay, Armando S. Somintac, Elmer S. Estacio, and Arnel A. Salvador

Appl. Phys. Lett. 88, 121122 (2006); http://dx.doi.org/10.1063/1.2189668 (3 pages)

Online Publication Date: 24 March 2006

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Room temperature time-resolved photoluminescence (TRPL) decay measurements are performed on oxidized and unoxidized vertical-cavity surface-emitting lasers (VCSELs). The oxidized device shows faster photoluminescence (PL) decay time (370 ps) compared to the unoxidized device (1200 ps). The oxidation of the AlAs layers reduces the aperture area and causes a blueshift in the cavity resonance wavelength, relative to that of the unoxidized device. The faster decay time can be attributed to better optical field confinement inside the microcavity which results in an increase in the transition probability of electron-hole recombination.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Sa Microcavity and microdisk lasers
78.55.Cr III-V semiconductors
78.47.-p Spectroscopy of solid state dynamics

1.9 THz quantum-cascade lasers with one-well injector

Sushil Kumar, Benjamin S. Williams, Qing Hu, and John L. Reno

Appl. Phys. Lett. 88, 121123 (2006); http://dx.doi.org/10.1063/1.2189671 (3 pages) | Cited 41 times

Online Publication Date: 24 March 2006

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We report terahertz quantum-cascade lasers operating predominantly at 1.90 THz with side modes as low as 1.86 THz (λ ≈ 161 μm, ℏω ≈ 7.7 meV). This is the longest wavelength to date of any solid-state laser that operates without assistance of a magnetic field. Carriers are injected into the upper radiative state by using a single quantum-well injector, which resulted in a significant reduction of free-carrier losses. The laser operated up to a heat-sink temperature of 110 K in pulsed mode, 95 K in continuous wave (cw) mode, and the threshold current density at 5 K was ∼ 140 A/cm2.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems

Elimination of AlGaN epilayer cracking by spatially patterned AlN mask

Marcin Sarzyński, Marcin Kryśko, Grzegorz Targowski, Robert Czernecki, Agnieszka Sarzyńska, Adam Libura, Wiktor Krupczyński, Piotr Perlin, and Michał Leszczyński

Appl. Phys. Lett. 88, 121124 (2006); http://dx.doi.org/10.1063/1.2189788 (3 pages) | Cited 5 times

Online Publication Date: 24 March 2006

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The inherent problem in III-nitride technology is the cracking of AlGaN layers that results from lattice mismatch between AlGaN and GaN. In case of thin substrates (30–90 μm), such as, bulk GaN grown by the high-pressure/high-temperature method, the bowing of AlGaN/GaN strained structures becomes an additional problem. To eliminate cracking and bowing, AlGaN layers were grown on GaN substrates with an AlN mask patterned to form 3–15 μm wide windows. In the 3 μm window, the AlGaN layer was not cracked, although its thickness and Al composition exceeded critical values for growth on nonpatterned substrates. Dislocation density in the windows was of 5×106/cm2.
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81.05.Ea III-V semiconductors
68.60.Bs Mechanical and acoustical properties
62.20.M- Structural failure of materials
81.40.Np Fatigue, corrosion fatigue, embrittlement, cracking, fracture, and failure
62.20.F- Deformation and plasticity
81.40.Lm Deformation, plasticity, and creep

A formula on phase velocity of waves and application

Z. Chen, Y. K. Ho, P. X. Wang, Q. Kong, Y. J. Xie, W. Wang, and J. J. Xu

Appl. Phys. Lett. 88, 121125 (2006); http://dx.doi.org/10.1063/1.2189829 (3 pages) | Cited 5 times

Online Publication Date: 24 March 2006

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Phase velocity plays a key role in wave-matter interactions where phase matching is essential. Laser acceleration of electrons is a good example. We have derived an exact formula with two deductions of the phase velocity for a monochromatic wave field in homogeneous medium from the fundamental wave equation. The core of these formulae is that the phase velocity is sufficiently determined in terms of the wave amplitude with no explicit reference to the phase. We applied these formulae to make out the phase velocity distribution of a Gaussian laser beam and compared with the traditional method.
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41.20.Jb Electromagnetic wave propagation; radiowave propagation
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
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