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Applied Physics Letters / Volume 88 / Issue 12 / STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

Appl. Phys. Lett. 88, 121925 (2006); doi:10.1063/1.2189670 (3 pages)

Atomic structure and electronic properties of c-Si/a-Si:H heterointerfaces

Yanfa Yan, M. Page, T. H. Wang, M. M. Al-Jassim, Howard M. Branz, and Qi Wang

National Renewable Energy Laboratory, Golden, Colorado 80401

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(Received 13 October 2005; accepted 10 February 2006; published online 24 March 2006)

The atomic structure and electronic properties of crystalline-amorphous interfaces in silicon heterojunction solar cells are investigated by high-resolution transmission electron microscopy, atomic-resolution Z-contrast imaging, and electron energy-loss spectroscopy. With these combined techniques, we directly observe abrupt and flat transition from crystalline Si to hydrogenated amorphous Si at the interface of Si heterojunction solar cells. We find that high-quality hydrogenated amorphous Si layers can be grown abruptly by hot-wire chemical vapor deposition on 200 °C (100) Si substrates after a two-step pretreatment of the substrate, comprised of exposure to hot-wire decomposed H2-diluted NH3 followed by atomic H etching.

© 2006 American Institute of Physics

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KEYWORDS and PACS

Keywords

silicon, hydrogen, elemental semiconductors, amorphous semiconductors, semiconductor heterojunctions, solar cells, transmission electron microscopy, electron energy loss spectra, chemical vapour deposition, semiconductor growth, interface structure, crystallisation

PACS

  • 81.05.Cy

    Elemental semiconductors

  • 81.05.Gc

    Amorphous semiconductors

  • 73.40.Lq

    Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

  • 68.35.Ct

    Interface structure and roughness

  • 84.60.Jt

    Photoelectric conversion

  • 81.15.Gh

    Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

ARTICLE DATA

Permalink
http://link.aip.org/link/doi/10.1063/1.2189670

PUBLICATION DATA

ISSN:

0003-6951 (print)  
1077-3118 (online)

Publisher:

$abstract.society.value is a Member of CrossRef American Institute of Physics

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    Z. Chen, S. K. Pang, K. Yasutake, and A. Rohatgi, J. Appl. Phys. 74, 2856 (1993)JAPIAU000074000004002856000001.

    I. Martin, M. Vetter, A. Orpella, J. Puigdollers, A. Cuevas, and R. Alcubilla, Appl. Phys. Lett. 79, 2199 (2001)APPLAB000079000014002199000001.

    F. Himpsel, F. R. McFeely, A. Taleb-Ibrahimi, J. A. Yarmoff, and G. Hollinger, Phys. Rev. B 38, 6084 (1988).

    S. J. Pennycook and D. E. Jesson, Phys. Rev. Lett. 64, 938 (1990).

    T. Tanaka, T. Mizoguchi, T. Sekine, H. He, K. Kimoto, T. Kibayashi, S.-D. Mo, and W. Y. Ching, Appl. Phys. Lett. 78, 2134 (2001)APPLAB000078000015002134000001.


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