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Applied Physics Letters / Volume 88 / Issue 12 / DEVICE PHYSICS

Appl. Phys. Lett. 88, 123509 (2006); http://dx.doi.org/10.1063/1.2188379 (3 pages)

High-performance ZnO thin-film transistors on gate dielectrics grown by atomic layer deposition

P. F. Carcia, R. S. McLean, and M. H. Reilly

Experimental Station, DuPont Research and Development, Wilmington, Delaware 19880-0356

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(Received 2 November 2005; accepted 22 February 2006; published online 21 March 2006)

We fabricated high-performance ZnO thin-film transistors on gate dielectrics of HfO2, HfSiOx, and Al2O3, grown by atomic layer deposition (ALD). Devices on HfO2 had a mobility of 12.2 cm2/V s with a threshold voltage of 2.6 V and subthreshold slope of 0.5 V/decade. Device performance on Al2O3 depended on synthesis temperature. For 100 nm thick Al2O3, synthesized at 200 °C, ZnO devices had a mobility of 17.6 cm2/V s with a threshold voltage of 6 V and less than ∼ 0.1 nA gate leakage at 20 V. The overall trends were that devices on Hf oxides had a lower threshold voltage, while the gate leakage current density was lower on Al2O3. Device characteristics for all ALD dielectrics exhibited negligibly small hysteresis, suggesting a low defect density at the interface of ZnO with the gate dielectric.

© 2006 American Institute of Physics

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KEYWORDS and PACS

Keywords

zinc compounds, II-VI semiconductors, wide band gap semiconductors, thin film transistors, atomic layer deposition, hafnium compounds, alumina, dielectric materials, semiconductor-insulator boundaries, carrier mobility, semiconductor growth, leakage currents, dielectric hysteresis

PACS

  • 85.30.Tv

    Field effect devices

  • 81.15.-z

    Methods of deposition of films and coatings; film growth and epitaxy

  • 81.15.Gh

    Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.2188379

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
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    P. F. Carcia, R. S. McLean, M. H. Reilly, and G. Nunes, Jr., Appl. Phys. Lett. 82, 1117 (2003)APPLAB000082000007001117000001.

    J. Kim, S. Kim, H. Jeon, M.-H. Cho, K.-B. Chung, and C. Bae, Appl. Phys. Lett. 87, 053108 (2005)APPLAB000087000005053108000001.

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