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20 Mar 2006

Volume 88, Issue 12, Articles (12xxxx)

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Appl. Phys. Lett. 88, 122510 (2006); http://dx.doi.org/10.1063/1.2186947 (3 pages)

P. Martín Pimentel, S. J. Hermsdoerfer, H. T. Nembach, B. Leven, B. Hillebrands, S. Trellenkamp, and S. Wolff
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In situ electrical probing and bias-mediated manipulation of dielectric nanotubes in a high-resolution transmission electron microscope

D. Golberg, M. Mitome, K. Kurashima, C. Y. Zhi, C. C. Tang, Y. Bando, and O. Lourie

Appl. Phys. Lett. 88, 123101 (2006); http://dx.doi.org/10.1063/1.2186987 (3 pages) | Cited 17 times

Online Publication Date: 21 March 2006

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Boron nitride nanotubes filled with magnesium oxides [MgO, MgO2] and/or hydroxide [Mg(OH)2] are electrically probed and delicately manipulated inside a 300 kV JEOL-3000F high-resolution transmission analytical electron microscope equipped with a side-entry “Nanofactory Instruments” piezoholder. At a low bias the nanotubes demonstrate truly insulating behavior. At a high bias of ±30 V they show reversible breakdown current of several dozens of nA. Under 300 kV electron beam irradiation the nanotubes are positively charged that allows us to perform on-demand manipulation with them through tuning of polarity and/or value of a bias voltage on a gold counterelectrode from −140 to +140 V, owing to the prominent electrostatic nanotube-electrode interactions.
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07.78.+s Electron, positron, and ion microscopes; electron diffractometers
84.37.+q Measurements in electric variables (including voltage, current, resistance, capacitance, inductance, impedance, and admittance, etc.)
77.22.Jp Dielectric breakdown and space-charge effects
06.30.Ka Basic electromagnetic quantities

Quantum confinement effect in crystalline silicon quantum dots in silicon nitride grown using SiH4 and NH3

Tae-Wook Kim, Chang-Hee Cho, Baek-Hyun Kim, and Seong-Ju Park

Appl. Phys. Lett. 88, 123102 (2006); http://dx.doi.org/10.1063/1.2187434 (3 pages) | Cited 81 times

Online Publication Date: 22 March 2006

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Crystalline silicon quantum dots (Si QDs) were spontaneously grown in the silicon nitride films by plasma-enhanced chemical vapor deposition using SiH4 and NH3 as precursors. When the size of the Si QDs was reduced from 4.9 to 2.9 nm, the photoluminescence peak energy was shifted from 1.73 to 2.77 eV. The photoluminescence peak energy was fitted to the relationship, E(eV) = 1.13+13.9/d2, where d is the diameter of the Si QD in nanometers. The measured band-gap energies of the Si QDs were in good agreement with the quantum confinement model for crystalline Si QDs. These results suggest that the hydrogen dissociated from NH3 plays an important role in improving the crystallinity and surface passivation of Si QDs.
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78.67.Hc Quantum dots
81.07.Ta Quantum dots
78.55.Hx Other solid inorganic materials
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
52.77.Dq Plasma-based ion implantation and deposition
68.65.Hb Quantum dots (patterned in quantum wells)
81.65.Rv Passivation

Self-organization of ultrahigh-density Fe–Ni–Co nanocolumns in Teflon® AF

Henry Greve, Abhijit Biswas, Ulrich Schürmann, Vladimir Zaporojtchenko, and Franz Faupel

Appl. Phys. Lett. 88, 123103 (2006); http://dx.doi.org/10.1063/1.2187436 (2 pages) | Cited 8 times

Online Publication Date: 22 March 2006

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We demonstrate a single-step and powerful method based on vapor-phase codeposition to fabricate self-organized, ultrahigh-density Fe–Ni–Co nanocolumnar structures in a Teflon® AF matrix. It is shown that at certain deposition parameters the structure of the metal-polymer nanocomposite changes from a cluster to a nanocolumnar morphology. These mostly monodisperse nanocolumns have an average diameter of around 6 nm separated by ∼ 4 nm Teflon® AF and were fabricated so far with aspect ratios of up to 30.
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81.16.Dn Self-assembly
61.46.-w Structure of nanoscale materials
81.07.-b Nanoscale materials and structures: fabrication and characterization
61.41.+e Polymers, elastomers, and plastics

High uniformity of self-organized InAs quantum wires on InAlAs buffers grown on misoriented InP(001)

Yuan-li Wang, P. Jin, X. L. Ye, C. L. Zhang, G. X. Shi, R. Y. Li, Y. H. Chen, and Z. G. Wang

Appl. Phys. Lett. 88, 123104 (2006); http://dx.doi.org/10.1063/1.2188040 (3 pages) | Cited 1 time

Online Publication Date: 22 March 2006

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Highly uniform InAs quantum wires (QWRs) have been obtained on the In0.5Al0.5As buffer layer grown on the InP substrate 8∘ off (001) towards (111) by molecular-beam epitaxy. The quasi-periodic composition modulation was spontaneously formed in the In0.5Al0.5As buffer layer on this misoriented InP (001). The width and period of the In-rich bands are about 10 and 40 nm, respectively. The periodic In-rich bands play a major role in the sequent InAs QWRs growth and the InAs QWRs are well positioned atop In-rich bands. The photoluminescence (PL) measurements showed a significant reduction in full width at half maximum and enhanced PL efficiency for InAs QWRs on misoriented InP(001) as compared to that on normal InP(001).
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81.07.Vb Quantum wires
81.05.Ea III-V semiconductors
81.16.Dn Self-assembly
78.67.Lt Quantum wires
78.55.Cr III-V semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Water-based compound Taylor cones held in vacuum: Feasibility and application to colloidal propulsion

S. Castro and R. Bocanegra

Appl. Phys. Lett. 88, 123105 (2006); http://dx.doi.org/10.1063/1.2188594 (3 pages) | Cited 3 times

Online Publication Date: 22 March 2006

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We prove here, the feasibility of water-based compound Taylor cones held in a vacuum. Unlike other solvents used in colloidal propulsion, water presents excellent qualities in terms of ion evaporation delay or attainable conductivity, enabling higher specific impulses and propulsion efficiency. However, its high volatility is limiting its use. This technique opens the path for water to be used as propellant in colloidal propulsion.
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47.57.jd Electrokinetic effects
64.70.F- Liquid-vapor transitions
68.03.Fg Evaporation and condensation of liquids
81.15.Rs Spray coating techniques
47.85.mb Coating flows

Formation of copper clusters on a thiophene mediated Si(111)-(7×7) surface via molecular anchors

Y. P. Zhang, K. S. Yong, H. S. O. Chan, G. Q. Xu, and X. S. Wang

Appl. Phys. Lett. 88, 123106 (2006); http://dx.doi.org/10.1063/1.2189013 (3 pages) | Cited 2 times

Online Publication Date: 22 March 2006

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Thiophene selectively binds to the pair of adjacent Si adatom and Si rest atom on the Si(111)-(7×7) surface, leading to the covalent attachment of C–S–C linkages onto the surface. Cu atoms are found to preferentially adsorb onto the S atoms of the functional C–S–C groups in the formation of copper nanoclusters on the thiophene-mediated Si(111)-(7×7) surface.
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61.46.Bc Structure of clusters (e.g., metcars; not fragments of crystals; free or loosely aggregated or loosely attached to a substrate)
68.43.Hn Structure of assemblies of adsorbates (two- and three-dimensional clustering)
68.43.Mn Adsorption kinetics

Self-assembled three-dimensional structures of single-crystalline ZnS submicrotubes formed by coalescence of ZnS nanowires

Guozhen Shen, Yoshio Bando, and Dmitri Golberg

Appl. Phys. Lett. 88, 123107 (2006); http://dx.doi.org/10.1063/1.2186980 (3 pages) | Cited 29 times

Online Publication Date: 22 March 2006

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Self-assembled three-dimensional (3D) dandelionlike ZnS structures have been successfully synthesized by a simple thermochemical process using ZnS and Ge powders as the source material. The as-synthesized dandelionlike structures consist of radially aligned ZnS submicrotubes with well-faceted hexagonal cross sections, which are formed by the coalescence of neighboring ZnS nanowires. A two-step self-assembly process was proposed to explain the formation mechanism. The as-synthesized 3D dandelionlike ZnS structures show strong green emission centered at about 550 nm as well as a weak emission at 720 nm.
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81.16.Dn Self-assembly
68.65.La Quantum wires (patterned in quantum wells)
78.67.Lt Quantum wires
78.55.Et II-VI semiconductors

Temperature dependence of point contact friction on silicon

André Schirmeisen, Lars Jansen, Hendrik Hölscher, and Harald Fuchs

Appl. Phys. Lett. 88, 123108 (2006); http://dx.doi.org/10.1063/1.2187575 (3 pages) | Cited 37 times

Online Publication Date: 22 March 2006

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Point contact friction and adhesion between a silicon tip and an untreated silicon(111) wafer are measured as a function of sample temperature in ultrahigh vacuum by friction force microscopy. While the friction coefficient changes drastically in the temperature range from 50 K to room temperature, and shows a reproducible maximum near 100 K, the simultaneously recorded adhesion shows much less temperature dependence. Interestingly, the velocity dependence of friction shows a logarithmic increase below 150 K although it is nearly constant above 150 K. This peculiar behavior has profound consequences for tribological properties of devices manufactured from silicon.
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81.05.Cy Elemental semiconductors
81.40.Pq Friction, lubrication, and wear
62.20.Qp Friction, tribology, and hardness

A method of printing carbon nanotube thin films

Yangxin Zhou, Liangbing Hu, and George Grüner

Appl. Phys. Lett. 88, 123109 (2006); http://dx.doi.org/10.1063/1.2187945 (3 pages) | Cited 142 times

Online Publication Date: 22 March 2006

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This paper describes a fabrication method for carbon nanotube thin films on various substrates including PET (polyethylene terephthalate), glass, polymethyl-methacrylate (PMMA), and silicon. The method combines a polydimethysiloxane (PDMS) based transfer-printing technique with vacuum filtration, and allows controlled deposition—and patterning if needed—of large area highly conducting carbon nanotube films with high homogeneity. In the visible and infrared range, the performance characteristics of fabricated films are comparable to that of indium tin oxide (ITO) on flexible substrates.
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81.07.De Nanotubes
61.46.Fg Nanotubes
73.63.Fg Nanotubes
78.67.Ch Nanotubes
68.55.-a Thin film structure and morphology
68.55.A- Nucleation and growth

Exploration of thermolithography for micro- and nanomanufacturing

Ming-Tsung Hung, Jichul Kim, and Y. Sungtaek Ju

Appl. Phys. Lett. 88, 123110 (2006); http://dx.doi.org/10.1063/1.2187948 (3 pages) | Cited 6 times

Online Publication Date: 22 March 2006

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Lithography is a critical enabling technology for manufacturing micro- and nanoscale devices and structures. The present work explores alternative lithography techniques that pattern photoresist layers through selective thermochemical cross-linking. Microfabricated thin-film heaters are used as precisely defined heat sources to determine the thermal transport properties of photoresist layers and study the kinetics of cross-linking reactions. The present work identifies heating temperature, heating duration, and UV exposure dose as independent control parameters in thermolithography and demonstrates its potential for three-dimensional micro- and nanomanufacturing.
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81.16.Nd Micro- and nanolithography
66.70.-f Nonelectronic thermal conduction and heat-pulse propagation in solids; thermal waves

Structural and optical properties of ZnO nanotower bundles

Y. H. Tong, Y. C. Liu, C. L. Shao, and R. X. Mu

Appl. Phys. Lett. 88, 123111 (2006); http://dx.doi.org/10.1063/1.2188386 (3 pages) | Cited 31 times

Online Publication Date: 22 March 2006

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ZnO nanotower bundles have been grown on the electrochemically deposited ZnO thin film by a simple hydrothermal process. The influence of surface/interface defects on the structural and optical properties is studied by x-ray diffraction, selected area electron diffraction, and photoluminescence techniques. The formation of ZnO nanotowers and defects may be attributed to kinetic confinement and thermodynamic processes. A wide visible emission band covering nearly the entire visible region is related with the surface/interface defects. By controlling the surface area-to-volume ratio and the width change of the single ZnO nanotower, the emission properties of ZnO nanotowers can be well modified.
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78.67.Bf Nanocrystals, nanoparticles, and nanoclusters
78.66.Hf II-VI semiconductors
78.55.Et II-VI semiconductors
61.46.-w Structure of nanoscale materials
68.55.-a Thin film structure and morphology

Mechanism of NO2 detection in carbon nanotube field effect transistor chemical sensors

Jian Zhang, Anthony Boyd, Alexander Tselev, Makarand Paranjape, and Paola Barbara

Appl. Phys. Lett. 88, 123112 (2006); http://dx.doi.org/10.1063/1.2187510 (3 pages) | Cited 43 times

Online Publication Date: 23 March 2006

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We report an experimental method that clearly determines the sensing mechanism of carbon-nanotube field effect transistors. The nanotube/electrode contacts are covered with a thick and long passivation layer that hinders their exposure to chemicals in a controlled fashion, leaving only the midsection of the nanotube exposed. In the case of nitrogen dioxide, a considerably delayed response is fully consistent with the diffusion of the gas through the passivation layer. The results clearly indicate that nitrogen dioxide detection is due to changes at the interfaces between the nanotube and the electrodes and not to molecules adsorbed on the nanotube surface.
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07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
85.30.Tv Field effect devices
85.35.Kt Nanotube devices
81.65.Rv Passivation

Field enhancement by surface plasmon polariton in self-assembling nanopatterned media

Tsuyoshi Matsuyama and Yoshimasa Kawata

Appl. Phys. Lett. 88, 123113 (2006); http://dx.doi.org/10.1063/1.2190708 (3 pages) | Cited 6 times

Online Publication Date: 24 March 2006

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We present the fabrication of nanodot arrays on metal films by self-assembly of diblock copolymer. The nanodots are uniform and aligned regularly with hexagonal close-packed structure on both gold film and glass. Gold is specifically a good candidate as the metal film excites surface plasmon polariton in the near-field optical media. Surface plasmon polariton is excited with the Kretschmann configuration at the gold-nanodot interface. We found that the intensity at the interface was enhanced 53.8 times to that of the incident light. It is expected to improve the carrier-to-noise ratio of the readout signal in the case of nanopatterned near-field optical data storage under collection mode.
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73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
73.22.Lp Collective excitations
73.21.La Quantum dots
71.36.+c Polaritons (including photon-phonon and photon-magnon interactions)
81.16.Rf Micro- and nanoscale pattern formation
42.79.Vb Optical storage systems, optical disks

Field-effect control of protein transport in a nanofluidic transistor circuit

Rohit Karnik, Kenneth Castelino, and Arun Majumdar

Appl. Phys. Lett. 88, 123114 (2006); http://dx.doi.org/10.1063/1.2186967 (3 pages) | Cited 53 times

Online Publication Date: 24 March 2006

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Electrostatic interactions play an important role in nanofluidic channels when the channel size is comparable to the Debye screening length. Electrostatic fields have been used to control concentration and transport of ions in nanofluidic transistors. Here, we report a transistor-reservoir-transistor circuit that can be used to turn “on” or “off” protein transport using electrostatic fields with gate voltages of ±1 V. Our results suggest that global electrostatic interactions of the protein were dominant over other interactions in the nanofluidic transistor. The fabrication technique also demonstrates the feasibility of nanofluidic integrated circuits for the manipulation of biomolecules in picoliter volumes.
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87.85.Qr Nanotechnologies-design
87.85.Rs Nanotechnologies-applications
87.14.E- Proteins
85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices
85.30.Tv Field effect devices

Formation of nanoscale liquid menisci in electric fields

Antonio Garcia-Martin and Ricardo Garcia

Appl. Phys. Lett. 88, 123115 (2006); http://dx.doi.org/10.1063/1.2189162 (3 pages) | Cited 12 times

Online Publication Date: 24 March 2006

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Nanometer-sized menisci of polar and nonpolar liquids are used to confine chemical reactions. Electric fields applied between two surfaces a few nanometers apart allow the formation and manipulation of three-dimensional nanoscale liquid bridges. At low fields, two stable shapes coexist: one represents a small liquid protrusion underneath the strongest field lines while the other is a nanoscale liquid contact bridging both surfaces. The formation of a nanoscale liquid meniscus requires the application of a threshold voltage to overcome the energy barrier between stable configurations. The bridge formation is accompanied by a drastic reduction of the electrical field at the solid-liquid interface.
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68.03.Cd Surface tension and related phenomena
68.15.+e Liquid thin films
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