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27 Mar 2006

Volume 88, Issue 13, Articles (13xxxx)

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Appl. Phys. Lett. 88, 133105 (2006); http://dx.doi.org/10.1063/1.2189203 (3 pages)

Premila Mohan, Junichi Motohisa, and Takashi Fukui
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Enhancement and suppression of spontaneous emission by temperature tuning InAs quantum dots to photonic crystal cavities

D. G. Gevaux, A. J. Bennett, R. M. Stevenson, A. J. Shields, P. Atkinson, J. Griffiths, D. Anderson, G. A. C. Jones, and D. A. Ritchie

Appl. Phys. Lett. 88, 131101 (2006); http://dx.doi.org/10.1063/1.2189747 (3 pages) | Cited 21 times

Online Publication Date: 27 March 2006

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We report on the control of the spontaneous emission rates in InAs self-assembled quantum dots weakly coupled to the mode of a modified H1 defect cavity in a two-dimensional photonic crystal slab. Changes in sample temperature are used to spectrally tune the exciton emission from a single quantum dot to the monopole mode of the microcavity. A Purcell enhancement of the spontaneous emission rate of up to a factor of 11.4 is seen on-resonance, while suppression by up to a factor of 4.4 is seen off-resonance. Also, a two orders of magnitude increase in the intensity of light detected from the exciton is measured when compared to a quantum dot in bulk GaAs.
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78.67.Hc Quantum dots
78.55.Cr III-V semiconductors
42.82.Gw Other integrated-optical elements and systems
42.70.Qs Photonic bandgap materials
71.35.-y Excitons and related phenomena

Time-resolved and antibunching experiments on single quantum dots at 1300 nm

C. Zinoni, B. Alloing, C. Monat, V. Zwiller, L. H. Li, A. Fiore, L. Lunghi, A. Gerardino, H. de Riedmatten, H. Zbinden, and N. Gisin

Appl. Phys. Lett. 88, 131102 (2006); http://dx.doi.org/10.1063/1.2190466 (3 pages) | Cited 45 times

Online Publication Date: 27 March 2006

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We present time integrated and time-resolved photoluminescence (PL) measurements on a single InAs/GaAs quantum dot (QD), embedded in a planar microcavity, emitting in the 1300 nm telecom band. The results of both measurements clearly identify the exciton and biexciton transitions from a single QD. By optimizing the extraction efficiency of the QD PL into the single mode fibers and carefully tuning two InGaAs avalanche photodiodes, we were able to measure the second order correlation function with integration times comparable to those made with silicon based technology. These measurements demonstrate that our single QDs are efficient sources of triggered single photons for quantum key distribution in the O band.
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78.67.Hc Quantum dots
78.47.-p Spectroscopy of solid state dynamics
78.55.Cr III-V semiconductors
42.82.Gw Other integrated-optical elements and systems
71.35.-y Excitons and related phenomena

A precise method for rotating single cells

Hiroaki Kobayashi, Ichirou Ishimaru, Ryoji Hyodo, Toshiki Yasokawa, Katsumi Ishizaki, Shigeki Kuriyama, Tsutomu Masaki, Seiji Nakai, Kaoru Takegawa, and Naotaka Tanaka

Appl. Phys. Lett. 88, 131103 (2006); http://dx.doi.org/10.1063/1.2190268 (2 pages) | Cited 10 times

Online Publication Date: 28 March 2006

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A precise method to rotate single cells is reported. In this method, the light pressure in the optical axis direction is harnessed as a rotating torque. Two proximal points in each cell are illuminated from different directions using two beams, and a light pressure is created that acts as a rotating torque. Using this proposed method, we could control the rotational direction of a microsphere regardless of the refractive index distribution in a noncontact operation. The microsphere could be rotated using proximal two-beam optical tweezers, and the rotational velocity could be controlled by changing the light intensity.
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87.63.L- Visual imaging
87.80.Cc Optical trapping
87.17.-d Cell processes
37.10.Vz Mechanical effects of light on atoms, molecules, and ions
42.62.Be Biological and medical applications

Dopant profile engineering by near-infrared femtosecond laser activation

Yi-Chao Wang, Ci-Ling Pan, Jia-Min Shieh, and Bau-Tong Dai

Appl. Phys. Lett. 88, 131104 (2006); http://dx.doi.org/10.1063/1.2191095 (3 pages) | Cited 4 times

Online Publication Date: 28 March 2006

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Femtosecond laser annealing (FLA) was employed for activation of phosphorus (P)- and boron (B)-implanted silicons with negligible dopant diffusion. Preamorphizing implantation is not required. We found that the dopant profiles in FLA-activated samples essentially duplicate those of as-implanted ones even for junctions as deep as 100 nm below the surface. The measured sheet resistances and activation efficiencies of P- and B-implanted samples were in the range of 100–400 Ω/◻ and 28%–35%, respectively. Moreover, thermal-energy-assisted dopant diffusion by heating was observed for substrate temperature as low as 100 °C. The shallow activated-depth feature associated with FLA reduces the separation between end-of-range defects and high-concentration portion of dopants. This generates a steep interstitial gradient responsible for observed B and P uphill diffusions at a depth of about 60 nm below the surface.
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61.72.S- Impurities in crystals
61.72.Cc Kinetics of defect formation and annealing
61.72.uf Ge and Si
66.30.J- Diffusion of impurities

Intersubband spectroscopy of quantum cascade lasers under operating conditions

D. G. Revin, L. R. Wilson, J. W. Cockburn, A. B. Krysa, J. S. Roberts, and R. J. Airey

Appl. Phys. Lett. 88, 131105 (2006); http://dx.doi.org/10.1063/1.2189911 (3 pages) | Cited 9 times

Online Publication Date: 28 March 2006

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A technique is described that enables the mid infrared spectroscopic study of the intersubband electron distribution in quantum cascade lasers under operating conditions. By measuring the transmission of a broadband thermal source through the waveguide of a λ ∼ 7.4 μm InGaAs/AlInAs/InP quantum cascade laser, the redistribution of the electrons in the active region confined levels has been investigated for a wide range of operating currents and temperatures. This technique also allows direct determination of key parameters such as the temperature of the core region under operating conditions, the modal gain coefficient, and the waveguide loss.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems

Ultralow noise optical pulse generation in an actively mode-locked quantum-dot semiconductor laser

Myoung-Taek Choi, Ji-Myung Kim, Wangkuen Lee, and Peter J. Delfyett

Appl. Phys. Lett. 88, 131106 (2006); http://dx.doi.org/10.1063/1.2190443 (3 pages) | Cited 6 times

Online Publication Date: 28 March 2006

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We report excellent noise performance of an external-cavity actively mode-locked laser based on quantum-dot gain medium. Optical pulse trains with less than 7.5 fs residual timing jitter (1 Hz to 10 MHz) for a 12.8 GHz harmonically mode-locked ring laser were obtained. This result represents, to our knowledge, the lowest residual jitter reported from actively mode-locked semiconductor lasers, and shows that quantum-dot mode-locked lasers are promising as sources of ultralow noise optical pulse trains.
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42.60.Fc Modulation, tuning, and mode locking
42.65.Re Ultrafast processes; optical pulse generation and pulse compression
42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Photoinduced currents in carbon nanotube/metal heterojunctions

Jia-Lin Sun, Jinquan Wei, Jia-Lin Zhu, Dong Xu, Xiaomeng Liu, Hongsan Sun, De-Hai Wu, and Nian-Le Wu

Appl. Phys. Lett. 88, 131107 (2006); http://dx.doi.org/10.1063/1.2189454 (3 pages) | Cited 18 times

Online Publication Date: 29 March 2006

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Significant photoinduced currents have been explored in carbon nanotube/metal heterojunctions, i.e., heterodimension junctions containing macrolong carbon nanotubes (CNTs). The experimental measurements clearly show that the net transport direction of the photoexcited electrons is from the lower dimensional CNTs to higher dimensional CNTs or metal electrodes and the photoinduced currents dramatically depend on the laser spot position relative to the junction interface. The currents increase linearly with the increase of the laser intensity as the intensity is not very large. A prototype sensor has been constructed to illustrate applications of the heterodimension junctions in photoelectronics.
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73.40.Ns Metal-nonmetal contacts
73.50.Pz Photoconduction and photovoltaic effects
73.63.Fg Nanotubes

Nonlinear magneto-optical rotation with amplitude modulated light

W. Gawlik, L. Krzemień, S. Pustelny, D. Sangla, J. Zachorowski, M. Graf, A. O. Sushkov, and D. Budker

Appl. Phys. Lett. 88, 131108 (2006); http://dx.doi.org/10.1063/1.2190457 (3 pages) | Cited 13 times

Online Publication Date: 29 March 2006

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The technique of nonlinear magneto-optical rotation with amplitude modulated light is developed. The technique is an alternative to its counterpart with frequency modulated light and can be applied to sensitive measurements of magnetic fields ranging from microgauss to the Earth-field level. The rotation signals exhibit nontrivial features such as narrowed non-Lorentzian line shapes and multicomponent resonances.
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32.60.+i Zeeman and Stark effects
42.65.-k Nonlinear optics
32.70.Jz Line shapes, widths, and shifts
07.77.-n Atomic, molecular, and charged-particle sources and detectors
31.50.Df Potential energy surfaces for excited electronic states

Spectral tuning of plasmon-enhanced silicon quantum dot luminescence

Julie S. Biteen, Nathan S. Lewis, Harry A. Atwater, Hans Mertens, and Albert Polman

Appl. Phys. Lett. 88, 131109 (2006); http://dx.doi.org/10.1063/1.2191411 (3 pages) | Cited 74 times

Online Publication Date: 31 March 2006

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In the presence of nanoscale silver island arrays, silicon quantum dots exhibit up to sevenfold luminescence enhancements at emission frequencies that correspond to the collective dipole plasmon resonance frequency of the Ag island array. Using electron-beam lithography to alter the pitch and particle diameter, this wavelength-selective enhancement can be varied as the metal array resonance wavelength is tuned from 600 to 900 nm. The luminescence intensity enhancement upon coupling is attributed to an increase in the radiative decay rate of the silicon quantum dots.
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78.55.Ap Elemental semiconductors
78.66.Db Elemental semiconductors and insulators
78.67.Hc Quantum dots
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
78.68.+m Optical properties of surfaces

Absolute calibration of optical tweezers

N. B. Viana, A. Mazolli, P. A. Maia Neto, H. M. Nussenzveig, M. S. Rocha, and O. N. Mesquita

Appl. Phys. Lett. 88, 131110 (2006); http://dx.doi.org/10.1063/1.2189148 (3 pages) | Cited 24 times

Online Publication Date: 31 March 2006

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As a step toward absolute calibration of optical tweezers, a first-principles theory of trapping forces with no adjustable parameters, corrected for spherical aberration, is experimentally tested. Employing two very different setups, we find generally very good agreement for the transverse trap stiffness as a function of microsphere radius for a broad range of radii, including the values employed in practice, and at different sample chamber depths. The domain of validity of the WKB (“geometrical optics”) approximation to the theory is verified. Theoretical predictions for the trapping threshold, peak position, depth variation, multiple equilibria, and “jump” effects are also confirmed.
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06.20.fb Standards and calibration
37.10.Vz Mechanical effects of light on atoms, molecules, and ions
31.15.A- Ab initio calculations
42.15.Fr Aberrations

Optical control of recovery speed of photoinduced third-harmonic generation in azo-copolymer thin films

Jian Hung Lin, Ngoc Diep Lai, and Chia Chen Hsu

Appl. Phys. Lett. 88, 131111 (2006); http://dx.doi.org/10.1063/1.2185078 (3 pages) | Cited 1 time

Online Publication Date: 31 March 2006

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Recovery speed of photoinduced third-harmonic (TH) generation in azo-copolymer thin films can be controlled by a nanosecond laser excitation. When the excitation is tuned on, the TH signal decreases because of angular hole burning and angular redistribution effects. After turning off the excitation, the TH signal can recover to its original level either within 1 min (high intensity excitation) or longer than several days (low intensity excitation). The fast recovery of the TH signal is attributed to the increase of temperature in the sample that causes molecules to more easily reorient and return to the original trans form.
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42.70.Jk Polymers and organics
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
78.66.Qn Polymers; organic compounds
42.65.Re Ultrafast processes; optical pulse generation and pulse compression

Low-temperature lasing action in a metal-backed monosubstituted polyacetylene

Yuan Ming Huang, Fufang Zhou, and Kaitian Xu

Appl. Phys. Lett. 88, 131112 (2006); http://dx.doi.org/10.1063/1.2191429 (3 pages) | Cited 1 time

Online Publication Date: 31 March 2006

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Within a metal-backed feedback structure, low-temperature laser action has been observed in a highly luminescent monosubstituted polyacetylene, poly(n-[(4′-hexylcarbonyl-biphenyl-4-oxy)]-1-propyne}(PBP), at a low pump intensity of about 4 kW/cm2. Sandwiched between a finely polished copper plate and a quartz plate, solid films of the polymer PBP begin to give off sharp line emission at 570 nm when the temperature drops below 200 K. Both the temperature and the pump intensity dependences of the sharp line emission are investigated. Our results suggest that low-temperature lowered threshold makes lasing feasible in PBP at a considerably low pumping intensity.
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78.45.+h Stimulated emission
42.70.Jk Polymers and organics
42.70.Hj Laser materials
78.66.Qn Polymers; organic compounds
78.55.Kz Solid organic materials

Efficient single-active-layer organic light-emitting diodes with fluoropolymer buffer layers

H. F. Wang, L. D. Wang, Z. X. Wu, D. Q. Zhang, J. Qiao, Y. Qiu, and X. G. Wang

Appl. Phys. Lett. 88, 131113 (2006); http://dx.doi.org/10.1063/1.2191470 (3 pages) | Cited 7 times

Online Publication Date: 31 March 2006

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In the present Letter, efficient organic light-emitting diodes (OLEDs) with tris(8-hydroxyquinolino) aluminum (Alq3) as a single-active layer have been prepared by using a series of fluoropolymer buffer layers. The OLEDs with a 10-nm-thick poly(tetrafluroethylene-perfluoroalkylvinylethers) (PFA) buffer layer had a current efficiency of 4.46 cd/A at a current density of 2000 A/m2, whereas conventional double-layer OLEDs with N,N′-bis-(1-naphthyl)-N,N′-diphenyl-1,1′-biphenyl-4,4′-diamine (NPB) and Alq3 showed a current efficiency of only 3.81 cd/A at the same condition in our experiment. The effect of the insulating fluoropolymer buffer layers could be interpreted to enhance hole injection and improve carrier balance.
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85.60.Jb Light-emitting devices

Measuring the role of surface chemistry in silicon microphotonics

Matthew Borselli, Thomas J. Johnson, and Oskar Painter

Appl. Phys. Lett. 88, 131114 (2006); http://dx.doi.org/10.1063/1.2191475 (3 pages) | Cited 28 times

Online Publication Date: 31 March 2006

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Utilizing a high quality factor (Q ∼ 1.5×106) optical microresonator to provide sensitivity down to a fractional surface optical loss of αs′ ∼ 10−7, we show that the optical loss within Si microphotonic components can be dramatically altered by Si surface preparation, with αs′ ∼ 1×10−5 measured for chemical oxide surfaces as compared to αs′ ⩽ 1×10−6 for hydrogen-terminated Si surfaces. These results indicate that the optical properties of Si surfaces can be significantly and reversibly altered by standard microelectronic treatments, and that stable, high optical quality surface passivation layers will be critical in future Si micro- and nanophotonic systems.
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78.66.Db Elemental semiconductors and insulators
81.65.Rv Passivation
42.79.-e Optical elements, devices, and systems

Exciton fine structure splitting in dot-in-a-well structures

A. I. Tartakovskii, R. S. Kolodka, H. Y. Liu, M. A. Migliorato, M. Hopkinson, M. N. Makhonin, D. J. Mowbray, and M. S. Skolnick

Appl. Phys. Lett. 88, 131115 (2006); http://dx.doi.org/10.1063/1.2191476 (3 pages) | Cited 2 times

Online Publication Date: 31 March 2006

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A range of dot-in-a-well structures designed for long-wavelength (>1.3 μm) emission is studied in polarization- and time-resolved differential transmission measurements. Quantum beats observed in differential transmission are employed to measure the fine structure splitting (EFS) of the bright exciton states. A strong dependence of EFS on In content in the InGaAs well surrounding the dots is observed. Large magnitudes of EFS up to 87 μeV are found.
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78.67.De Quantum wells
71.35.-y Excitons and related phenomena
78.55.Cr III-V semiconductors
78.47.-p Spectroscopy of solid state dynamics
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