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Applied Physics Letters / Volume 88 / Issue 14 / ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Appl. Phys. Lett. 88, 142102 (2006); http://dx.doi.org/10.1063/1.2191420 (3 pages)

Analysis of graphene nanoribbons as a channel material for field-effect transistors

B. Obradovic1, R. Kotlyar1, F. Heinz1, P. Matagne1, T. Rakshit1, M. D. Giles1, M. A. Stettler1, and D. E. Nikonov2

1Process Technology Modeling, Intel Corporation, Hillsboro, Oregon 97124
2External Programs, Intel Corporation, Hillsboro, Oregon 97124

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(Received 2 December 2005; accepted 6 March 2006; published online 3 April 2006)

Electronic properties of graphene (carbon) nanoribbons are studied and compared to those of carbon nanotubes. The nanoribbons are found to have qualitatively similar electron band structure which depends on chirality but with a significantly narrower band gap. The low- and high-field mobilities of the nanoribbons are evaluated and found to be higher than those of carbon nanotubes for the same unit cell but lower at matched band gap or carrier concentration. Due to the inverse relationship between mobility and band gap, it is concluded that graphene nanoribbons operated as field-effect transistors must have band gaps <0.5 eV to achieve mobilities significantly higher than those of silicon and thus may be better suited for low power applications.

© 2006 American Institute of Physics

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KEYWORDS and PACS

Keywords

graphite, elemental semiconductors, nanostructured materials, field effect transistors, energy gap, carrier mobility, carrier density

PACS

  • 85.30.Tv

    Field effect devices

  • 71.20.Tx

    Fullerenes and related materials; intercalation compounds

  • 73.22.-f

    Electronic structure of nanoscale materials and related systems

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.2191420

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
    K. Nakada, M. Fujita, G. Dresselhaus, and M. Dresselhaus, Phys. Rev. B 54, 17954 (1996).

    G. Pennington and N. Goldsman, Phys. Rev. B 68, 045426 (2003).

    R. Kotlyar, B. Obradovic, P. Matagne, and M. A. Stettler, Appl. Phys. Lett. 84, 5270 (2004)APPLAB000084000025005270000001.


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