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3 Apr 2006

Volume 88, Issue 14, Articles (14xxxx)

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Appl. Phys. Lett. 88, 143508 (2006); http://dx.doi.org/10.1063/1.2191448 (3 pages)

R. Chan, M. Feng, N. Holonyak, A. James, and G. Walter
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Magnesium oxide as a candidate high-κ gate dielectric

L. Yan, C. M. Lopez, R. P. Shrestha, E. A. Irene, A. A. Suvorova, and M. Saunders

Appl. Phys. Lett. 88, 142901 (2006); http://dx.doi.org/10.1063/1.2191419 (3 pages) | Cited 22 times

Online Publication Date: 3 April 2006

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Magnesium oxide (MgO) thin films with sharp interfaces were deposited by sputtering of a Mg target on Si. The film stack was characterized using spectroscopic ellipsometry and transmission electron microscopy and the film static dielectric constant (κ) and interface traps were determined. An amorphous SiO2 layer was found at the MgO/Si interface as a result of subcutaneous Si oxidation. κ for the MgO films was found to be about twice that of SiO2, and the interface trap densities of MgO/Si were found to be comparable with SiO2/Si, rendering MgO competitive with all presently considered high-κ dielectrics.
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77.55.-g Dielectric thin films
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
81.15.Cd Deposition by sputtering
68.55.A- Nucleation and growth
73.20.At Surface states, band structure, electron density of states
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

Study on vacancy formation in ferroelectric PbTiO3 from ab initio

Zhen Zhang, Ping Wu, Li Lu, and Chang Shu

Appl. Phys. Lett. 88, 142902 (2006); http://dx.doi.org/10.1063/1.2192623 (3 pages) | Cited 21 times

Online Publication Date: 3 April 2006

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Formation energies of possible vacancies under different oxygen partial pressures were studied using an ab initio density functional theory and supercell approach. Under oxygen-rich conditions, lead vacancies are the stable ones throughout the band gap, and their ionization level locates at 0.56 eV from the top of valence band, which may contribute to p-type conduction. Under oxygen-poor conditions, oxygen vacancies are the stable ones at the top of the valence band. It is a deep donor that may not only dilute the acceptor carriers to weaken the p-type conduction but hardly contribute to n-type conduction.
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61.72.J- Point defects and defect clusters
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.80.-e Ferroelectricity and antiferroelectricity
71.15.Mb Density functional theory, local density approximation, gradient and other corrections
71.20.Ps Other inorganic compounds
71.55.Ht Other nonmetals

Substrate-induced strain effects on the transport properties of pulsed laser-deposited Nb-doped SrTiO3 films

W. Ramadan, S. B. Ogale, S. Dhar, S. X. Zhang, D. C. Kundaliya, I. Satoh, and T. Venkatesan

Appl. Phys. Lett. 88, 142903 (2006); http://dx.doi.org/10.1063/1.2187439 (3 pages) | Cited 7 times

Online Publication Date: 4 April 2006

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Thin films of Nb-doped SrTiO3 (NSTO) are grown via pulsed laser deposition (PLD) on LaAlO3 (LAO,001), MgAl2O4 (MAO,001), SrTiO3 (STO,001), and Y-stabilized ZrO2 (YSZ,001) substrates. The effects of the film-substrate lattice mismatch, film thickness, and substrate temperature during growth on the film properties are investigated. The electrical transport in NSTO films is shown to exhibit a strong sensitivity to strain, which is suggested to arise from the dependence of carrier mobility on bond distortions/stretching and related changes in phonon modes.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.55.-g Dielectric thin films
68.60.Bs Mechanical and acoustical properties
73.61.Ng Insulators
73.50.Dn Low-field transport and mobility; piezoresistance
81.15.Fg Pulsed laser ablation deposition

Thickness dependence of structural and piezoelectric properties of epitaxial Pb(Zr0.52Ti0.48)O3 films on Si and SrTiO3 substrates

D. M. Kim, C. B. Eom, V. Nagarajan, J. Ouyang, R. Ramesh, V. Vaithyanathan, and D. G. Schlom

Appl. Phys. Lett. 88, 142904 (2006); http://dx.doi.org/10.1063/1.2185614 (3 pages) | Cited 24 times

Online Publication Date: 7 April 2006

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We report the structural and longitudinal piezoelectric responses (d33) of epitaxial Pb(Zr0.52Ti0.48)O3 (PZT) films on (001) SrTiO3 and Si substrates in the thickness range of 40 nm–4 μm. With increasing film thickness the tetragonality of PZT was reduced. The increase in d33 value with increasing film thicknesses was attributed to the reduction of substrate constraints and softening of PZT due to reduced tetragonality. The d33 values of PZT films on Si substrates ( ∼ 330 pm/V) are higher than those on SrTiO3 substrates ( ∼ 200 pm/V). The epitaxial PZT films on silicon will lead to the fabrication of high performance piezoelectric microelectromechanical devices.
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77.55.-g Dielectric thin films
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.65.Bn Piezoelectric and electrostrictive constants
68.55.-a Thin film structure and morphology

Fabrication and characterizations of proton-exchanged LiNbO3 waveguides fabricated by inductively coupled plasma technique

Z. Ren, P. J. Heard, K. R. Hallam, Alex Wotherspoon, Q. Jiang, R. Varrazza, and S. Yu

Appl. Phys. Lett. 88, 142905 (2006); http://dx.doi.org/10.1063/1.2191704 (3 pages) | Cited 3 times

Online Publication Date: 7 April 2006

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This Letter reports the use of an inductively coupled plasma technique for fabrication of proton-exchanged (PE) LiNbO3 (LN) waveguides. Planar and stripe waveguides have been formed in Y-cut LN which are difficult to obtain with the conventional molten acid method due to the occurrence of surface damage. Secondary ion mass spectrometry, scanning electron microscopy, and infrared absorption spectrum characterization results revealed that a uniform vertical PE profile with a single low order crystal phase has been directly obtained as a result of this unique process. X-ray photoelectron spectroscopy characterization of the treated surface revealed the existence of NbO as the cause for a sometimes darkened surface and confirms the ability to completely restore the surface to LN by oxygen plasma treatment. Atomic force microscopy measurement confirms that good surface quality has been maintained after regeneration of the surface to LN.
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42.79.Gn Optical waveguides and couplers
42.82.Et Waveguides, couplers, and arrays
84.40.Az Waveguides, transmission lines, striplines
52.77.-j Plasma applications
68.37.Ps Atomic force microscopy (AFM)
68.37.Hk Scanning electron microscopy (SEM) (including EBIC)
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