APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter UniPHY Group iResearch App Facebook

Applied Physics Letters / Volume 88 / Issue 19 / ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Appl. Phys. Lett. 88, 192112 (2006); doi:10.1063/1.2201891 (3 pages)

Interfacial reactions in a HfO2/TiN/poly-Si gate stack

M. MacKenzie1, A. J. Craven1, D. W. McComb2, and S. De Gendt3

1Department of Physics & Astronomy, University of Glasgow, Glasgow G12 8QQ, United Kingdom
2Department of Materials, Imperial College London, London SW7 2AZ, United Kingdom
3IMEC, Kapeldreef 75, B-3001 Leuven, Belgium and Department of Chemistry, Katholieke Universiteit Leuven, B-3001 Leuven, Belgium

View MapView Map

(Received 5 January 2006; accepted 21 March 2006; published online 12 May 2006)

Interface reactions are investigated in a Si(100)/SiO2/HfO2/TiN/poly-Si gate stack using electron-energy-loss spectroscopy. The electron-energy-loss near-edge fine structure on the core edges shows evidence of interface reactions having occurred between the TiN metal gate and surrounding layers. A Si(O,N) phase is observed at the TiN/poly-Si interface.

© 2006 American Institute of Physics

RELATED DATABASES

To view database links for this article, you need to log in.

KEYWORDS and PACS

Keywords

hafnium compounds, titanium compounds, silicon, elemental semiconductors, semiconductor-insulator boundaries, high-k dielectric thin films, silicon compounds, electron energy loss spectra, interface structure

PACS

ARTICLE DATA

Permalink
http://link.aip.org/link/doi/10.1063/1.2201891

PUBLICATION DATA

ISSN:

0003-6951 (print)  
1077-3118 (online)

Publisher:

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
    P. S. Lysaght, B. Foran, G. Bersuker, J. J. Peterson, C. D. Young, P. Majhi, B.-H. Lee, and H. R. Huff, Appl. Phys. Lett. 87, 082903 (2005)APPLAB000087000008082903000001.


For access to citing articles, you need to log in.


Figures (4)

Access to article objects (figures, tables, multimedia) requires a subscription; log in to view available files.
(Access to supplementary files, where available, is free for this journal.)



Close

Google Calendar

ADVERTISEMENT

Your Recent History Recent History Help

Recently Viewed

  1. Interfacial reactions in a HfO2/TiN/poly-Si gate stack
  2. Spectral effects of gain saturation in the β-phase of poly(9,9-dioctylfluorene)
  3. The role of the β-phase content on the stimulated emission of poly(9,9-dioctylfluorene) thin films
  4. Ca test of Al2O3 gas diffusion barriers grown by atomic layer deposition on polymers
  5. Atomic layer deposition of gadolinium scandate films with high dielectric constant and low leakage current
Go to AIP Home
Copyright © American Institute of Physics
close