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8 May 2006

Volume 88, Issue 19, Articles (19xxxx)

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Appl. Phys. Lett. 88, 193113 (2006); http://dx.doi.org/10.1063/1.2202003 (3 pages)

Fa-Quan He and Ya-Pu Zhao
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Efficient, color-stable fluorescent white organic light-emitting diodes with single emission layer by vapor deposition from solvent premixed deposition source

Jwo-Huei Jou, Yung-Sheng Chiu, Chung-Pei Wang, Ren-Yang Wang, and Huei-Ching Hu

Appl. Phys. Lett. 88, 193501 (2006); http://dx.doi.org/10.1063/1.2200007 (3 pages) | Cited 37 times

Online Publication Date: 8 May 2006

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Efficient, color-stable fluorescent white organic light-emitting diodes (OLEDs) with single emission layer were fabricated by vapor deposition from solvent premixed mixtures of 1,4-bis(2,2-diphenylvinyl)biphenyl doped with 4-(dicyanomethylene)-2-methyl-6-(julolidin-4-yl-vinyl)-4H-pyran and/or 10-(2-benzothiazolyl)-2,3,6,7-tetrahydro-1,1,7,7-tetramethyl-1H,5H,11H-(1)benzopy-rano(6,7,8-l, j)quinolizine-11-one. The power efficiencies at 100 cd/m2 were 4.6 lm/W for the two-spectrum pure white OLEDs and 7.2 lm/W m2 for the three-spectrum ones with white emission. By using a different host of 10,10′-bis(biphenyl-4-yl)-9,9′-bianthryl and a greenish-blue dye of di(triphenylamine)-1,4-divinylnaphthalene, the three-spectrum OLEDs with a power efficiency of 6.8 lm/W at 100 cd/m2 were obtained.
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85.60.Jb Light-emitting devices
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Role of oxygen vacancy in HfO2/SiO2/Si(100) interfaces

Deok-Yong Cho, S.-J. Oh, Y. J. Chang, T. W. Noh, Ranju Jung, and Jae-Cheol Lee

Appl. Phys. Lett. 88, 193502 (2006); http://dx.doi.org/10.1063/1.2201050 (3 pages) | Cited 21 times

Online Publication Date: 8 May 2006

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We have investigated the interface states in HfO2/SiO2/Si(100) systems that were prepared by using the in situ pulsed laser deposition technique. X-ray photoelectron spectroscopy data revealed that when the HfO2 film thickness exceeds 11 Å, the film composition undergoes a systematic change from Hf silicate to oxygen-deficient HfOx<2. Furthermore, we determined that the evolution of the interface states clearly depends on the oxygen condition applied during the film growth and that the oxygen vacancy is an important parameter for Hf silicate formation.
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73.20.At Surface states, band structure, electron density of states
79.60.Bm Clean metal, semiconductor, and insulator surfaces
82.80.Pv Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)
77.55.-g Dielectric thin films
61.72.J- Point defects and defect clusters
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.

GaN full-vertical p-i-n rectifiers employing AlGaN:Si conducting buffer layers on n-SiC substrates

D. Yoo, J. Limb, J.-H. Ryou, W. Lee, and R. D. Dupuis

Appl. Phys. Lett. 88, 193503 (2006); http://dx.doi.org/10.1063/1.2201554 (3 pages) | Cited 5 times

Online Publication Date: 8 May 2006

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The development of a full-vertical GaN p-i-n rectifier on a 6H n-type SiC substrate by employing a conducting AlxGa1−xN:Si (x = ∼ 0.1) buffer layer scheme is reported. In this vertical configuration, the n contact is made on the backside of the SiC substrate using a Ni/Au metallization scheme. Epitaxial layers are grown by low-pressure metal organic chemical vapor deposition. The AlxGa1−xN:Si nucleation layer is proven to provide excellent electrical properties while also acting as a good buffer layer for subsequent GaN growth. The reverse breakdown voltage for a relatively thin 2.5 μm thick i region was found to be over −330 V. The devices also show a low on resistance of Ron of 7.5×10−3 Ω cm2. This full-vertical configuration provides the advantage of the reduction of sidewall damage from plasma etching and lower forward resistance due to the reduction of current crowding in the bottom n-type layer.
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85.30.Kk Junction diodes
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
85.40.Ls Metallization, contacts, interconnects; device isolation
81.65.Cf Surface cleaning, etching, patterning
52.77.Bn Etching and cleaning

Energetics at Au top and bottom contacts on conjugated polymers

W. Osikowicz, M. P. de Jong, S. Braun, C. Tengstedt, M. Fahlman, and W. R. Salaneck

Appl. Phys. Lett. 88, 193504 (2006); http://dx.doi.org/10.1063/1.2201627 (3 pages) | Cited 33 times

Online Publication Date: 8 May 2006

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Photoelectron spectroscopy was employed to examine the energetics, and therefore charge injection barriers, at top and bottom contact configurations of gold and conjugated polymers, i.e., polymer spin coated on gold and vapor-deposited gold on polymer interfaces. Very similar results are obtained for both ex situ (contaminated) and in situ (clean) prepared interfaces: a 0.7–0.8 eV decrease in the vacuum energy levels is consistently observed as compared to bare polycrystalline gold. These observations are explained by changes of the metal work function upon contacting either polymers or contaminants, associated with the reduction of the electron density tail that extends outside the metal surface.
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73.40.Ns Metal-nonmetal contacts
79.60.-i Photoemission and photoelectron spectra
73.30.+y Surface double layers, Schottky barriers, and work functions

Investigation of Pd/Ti/Al and Ti/Al Ohmic contact materials on Ga-face and N-face surfaces of n-type GaN

T. Jang, S. N. Lee, O. H. Nam, and Y. Park

Appl. Phys. Lett. 88, 193505 (2006); http://dx.doi.org/10.1063/1.2201881 (3 pages) | Cited 19 times

Online Publication Date: 8 May 2006

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Pd/Ti/Al and Ti/Al Ohmic contact materials on Ga-face and N-face surfaces of n-type GaN were investigated by measuring the contact resistivities with respect to annealing temperatures. Pd/Ti/Al contact showed good Ohmic property in contrast to Ti/Al contact on N-face surface of n-type GaN. Cross-sectional transmission electron microscopy results on samples of as-deposited and annealed at 450 °C for 30 s indicated that Pd played an important role in changing the surface state of N-face surface of n-type GaN and less than 50 Å of Pd was required to obtain the best Ohmic contact property.
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73.40.Ns Metal-nonmetal contacts
73.40.Cg Contact resistance, contact potential
73.20.At Surface states, band structure, electron density of states
61.72.Cc Kinetics of defect formation and annealing

Si/SiGe-based edge-coupled photodiode with partially p-doped photoabsorption layer for high responsivity and high-power performance

J.-W. Shi, P.-H. Chiu, F.-H. Huang, Y.-S. Wu, Ja-Yu Lu, C.-K. Sun, C.-W. Liu, and P.-S. Chen

Appl. Phys. Lett. 88, 193506 (2006); http://dx.doi.org/10.1063/1.2202101 (3 pages) | Cited 1 time

Online Publication Date: 9 May 2006

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We demonstrate a Si/SiG-based edge-coupled photodiode that can achieve high-speed, high output power, and high responsivity performance at a wavelength of 830 nm for application to short-reach fiber communication. We incorporate a p-type-doped Si/Si0.5Ge0.5-based superlattice with a Si-based depletion layer to enhance the photoabsorption process and minimize the hole-trapping problem of the Si/SiGe multiple quantum well. An extremely high bandwidth-efficiency product performance (10 GHz, 276%, 27.6 GHz) and high peak output voltage (1.5 V) have been achieved simultaneously by operating this device in the avalanche regime.
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85.60.Dw Photodiodes; phototransistors; photoresistors
85.30.Kk Junction diodes
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
85.40.Ry Impurity doping, diffusion and ion implantation technology

Unusual colossal positive magnetoresistance of the n-n heterojunction composed of La0.33Ca0.67MnO3 and Nb-doped SrTiO3

C. M. Xiong, Y. G. Zhao, B. T. Xie, P. L. Lang, and K. J. Jin

Appl. Phys. Lett. 88, 193507 (2006); http://dx.doi.org/10.1063/1.2203204 (3 pages) | Cited 34 times

Online Publication Date: 10 May 2006

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An n-n heterojunction composed of La0.33Ca0.67MnO3 and Nb-doped SrTiO3 was fabricated, and it shows good rectifying property. The temperature variation of junction resistance for high reverse voltage exhibits a metal-insulator-like transition that shifts to high temperatures with further increasing voltage. The heterojunction presents a remarkable positive magnetoresistance under the reverse bias voltage at low temperatures, and the maximum of magnetoresistance can even reach ∼ 400% under a field of 1 T. A qualitative explanation is given based on the analysis of the electron filling near the interface and its tunable feature under the bias voltage and magnetic field. This result can be helpful for both the understanding of the manganites and the future applications of the manganite-based devices.
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75.47.Gk Colossal magnetoresistance
75.47.Lx Magnetic oxides
73.40.Ei Rectification

Aging effects in pentacene thin-film transistors: Analysis of the density of states modification

F. De Angelis, S. Cipolloni, L. Mariucci, and G. Fortunato

Appl. Phys. Lett. 88, 193508 (2006); http://dx.doi.org/10.1063/1.2203742 (3 pages) | Cited 26 times

Online Publication Date: 11 May 2006

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Field effect analysis has been employed in order to calculate the density of states of high quality pentacene thin-film transistors. The degradation of the electrical characteristics caused by the exposure to air has been studied and discussed in term of density of states modification. The calculated density of the states has been approximated by two exponential terms, as in amorphous silicon, and it has been used in a two-dimensional numerical simulation in order to reproduce the electrical characteristic variation with respect of the temperature and aging time.
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85.30.Tv Field effect devices
71.20.Rv Polymers and organic compounds

Reduction of crystal resonator second-order normal acceleration sensitivity by overhang plates

Jiashi Yang and Shaohua Guo

Appl. Phys. Lett. 88, 193509 (2006); http://dx.doi.org/10.1063/1.2202726 (2 pages) | Cited 2 times

Online Publication Date: 11 May 2006

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We propose to use overhang plates for reducing the second-order normal acceleration sensitivity of crystal resonators. A theoretical analysis is performed. Results show that the second-order normal acceleration sensitivity of a thickness-shear resonator can be reduced by two orders of magnitude.
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85.50.-n Dielectric, ferroelectric, and piezoelectric devices
43.58.-e
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