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8 May 2006

Volume 88, Issue 19, Articles (19xxxx)

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Appl. Phys. Lett. 88, 193113 (2006); http://dx.doi.org/10.1063/1.2202003 (3 pages)

Fa-Quan He and Ya-Pu Zhao
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Impedance study near the ferroelastic transition in TlH2PO4

S. H. Kim, K. W. Lee, I.-M. Kim, Cheol Eui Lee, and Kwang-Sei Lee

Appl. Phys. Lett. 88, 192901 (2006); http://dx.doi.org/10.1063/1.2201624 (3 pages) | Cited 4 times

Online Publication Date: 8 May 2006

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The high temperature phase in TlH2PO4, a hydrogen-bonded antiferroelectric/ferroelastic material, was investigated by ac impedance measurements. A Warburg diffusion was manifested in the low-frequency region in the Cole-Cole plots near the ferroelastic transition temperature Tc′ = 357 K, indicating a surface instability. The temperature dependent impedance, analyzed by a simple equivalent circuit model, was discussed in view of hydrogen delocalization on the surface.
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77.84.-s Dielectric, piezoelectric, ferroelectric, and antiferroelectric materials
64.70.K- Solid-solid transitions
81.40.Jj Elasticity and anelasticity, stress-strain relations
77.80.-e Ferroelectricity and antiferroelectricity
62.20.F- Deformation and plasticity
62.20.D- Elasticity

Bismuth-zinc-niobate embedded capacitors grown at room temperature for printed circuit board applications

Jong-Hyun Park, Woo-Sung Lee, Nak-Jin Seong, Soon-Gil Yoon, Seung-Hyun Son, Hyung-Mi Chung, Jin-Suck Moon, Hyun-Joo Jin, Seung-Eun Lee, Jeong-Won Lee, Hyung-Dong Kang, Yeoul-Kyo Chung, and Yong-Soo Oh

Appl. Phys. Lett. 88, 192902 (2006); http://dx.doi.org/10.1063/1.2202129 (3 pages) | Cited 32 times

Online Publication Date: 9 May 2006

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We fabricated metal-insulator-metal (MIM) thin film capacitors with Bi1.5Zn1.0Nb1.5O7 (BZN) dielectric films. The BZN films were deposited at room temperatures by pulsed laser deposition and annealed below 200 °C which is compatible with the used polymer-based substrates. The dielectric constant of BZN films increases from 2 to 70, when they are annealed at 150 °C, but still in amorphous phase. We found that a considerable portion of Bi metallic phase still remains in the as-deposited film. They turn into oxides upon annealing at >120 °C, causing the dramatic change of the dielectric properties. Amorphous BZN thin films exhibit superior dielectric characteristics, capacitance density of 150 nF/cm2, and leakage current less than 1 μA/cm2 at 5 V. The MIM capacitors using amorphous BZN thin films will be a promising candidate for the PCB-embedded capacitors.
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85.40.-e Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology
84.32.Tt Capacitors

Relaxor ferroelectric behavior of poly(vinylidene fluoride-trifluorethylene) copolymer modified by low energy irradiation

Luiz O. Faria, Cezar Welter, and Roberto L. Moreira

Appl. Phys. Lett. 88, 192903 (2006); http://dx.doi.org/10.1063/1.2202144 (3 pages) | Cited 3 times

Online Publication Date: 9 May 2006

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We report a relaxorlike modification in the ferroelectric poly(vinylidene fluoride-trifluorethylene) copolymer using ultraviolet (UV) irradiation. This behavior is clearly demonstrated by dielectric measurements. Besides the relaxor feature, the ferroelectric character of the material is retained, also exhibiting Curie transition at barely diminished temperatures. UV-Vis absorption measurements suggests that the UV radiation induces conjugated CC bonds in the copolymer chains. The coexistence of both relaxor and ferroelectric behavior, the lack of chain cross-linking, and a weak reducing in the crystallinity suggest that the UV-induced defects are not sufficient to completely break up the polarization domains.
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77.84.Jd Polymers; organic compounds
77.80.B- Phase transitions and Curie point
77.80.Dj Domain structure; hysteresis
61.41.+e Polymers, elastomers, and plastics
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
61.82.Pv Polymers, organic compounds

Effect of post deposition annealing on the optical properties of HfOxNy films

M. Liu, Q. Fang, G. He, L. Li, L. Q. Zhu, G. H. Li, and L. D. Zhang

Appl. Phys. Lett. 88, 192904 (2006); http://dx.doi.org/10.1063/1.2202689 (3 pages) | Cited 16 times

Online Publication Date: 9 May 2006

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We report in this letter that Hafnium oxynitride (HfOxNy) gate dielectrics were prepared by radio frequency (RF) reactive magnetron sputtering and optical properties of the HfOxNy thin films were investigated by spectroscopic ellipsometry with photon energy of 0.75–6.5 eV at room temperature. The investigations showed that the annealing temperatures have a strong effect on the optical properties of HfOxNy thin films. With increased annealing temperature, the refractive index n is observed to increase, while the extinction coefficient k decreases, respectively. The changes of the complex dielectric functions and the optical band gap Eg with the annealing temperature are also discussed.
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81.40.Tv Optical and dielectric properties related to treatment conditions
77.55.-g Dielectric thin films
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
77.22.Ch Permittivity (dielectric function)
81.40.Gh Other heat and thermomechanical treatments

Processing and on-wafer test of ferroelectric film microwave varactors

J.-Y. Kim and A. M. Grishin

Appl. Phys. Lett. 88, 192905 (2006); http://dx.doi.org/10.1063/1.2202748 (3 pages) | Cited 5 times

Online Publication Date: 9 May 2006

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We present comparative characteristics of microwave variable capacitors (varactors) fabricated on Na0.5K0.5NbO3 (NKN), AgTa0.5Nb0.5O3 (ATN), and Ba0.5Sr0.5TiO3 (BST) ferroelectric films grown by rf-magnetron sputtering (NKN) and pulsed laser deposition (ATN and BST) techniques on the sapphire. Two port 2 μm finger gap coplanar waveguide interdigital capacitors (CPWIDCs) were defined on ferroelectric films surface by photolithographic lift-off technique. Deembedding method was employed to extract properties of CPWIDC from the S parameters measured in microwave range up to 40 GHz. BST films on sapphire substrates show superior tunability of 26% (20 GHz, 200 kV/cm), whereas ATN films possess the lowest tan δ = 0.06 at 20 GHz and extremely low dispersion of 4.3% in a whole frequency range of 45 MHz–40 GHz.
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84.32.Tt Capacitors
85.50.-n Dielectric, ferroelectric, and piezoelectric devices
84.40.Az Waveguides, transmission lines, striplines
85.40.Hp Lithography, masks and pattern transfer

Noncontact dielectric constant metrology of low-k interconnect films using a near-field scanned microwave probe

Vladimir V. Talanov, André Scherz, Robert L. Moreland, and Andrew R. Schwartz

Appl. Phys. Lett. 88, 192906 (2006); http://dx.doi.org/10.1063/1.2203238 (3 pages) | Cited 8 times

Online Publication Date: 9 May 2006

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We present a method for noncontact, noninvasive measurements of dielectric constant k of 100-nm- to 1.5-μm-thick blanket low-k interconnect films on up to 300 mm in diameter wafers. The method has about 10 μm sampling spot size, and provides <0.3% precision and ±2% accuracy for k value. It is based on a microfabricated near-field scanned microwave probe formed by a 4 GHz parallel strip transmission line resonator tapered down to a few micron tip size.
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77.22.Ch Permittivity (dielectric function)
77.55.-g Dielectric thin films
85.40.Ls Metallization, contacts, interconnects; device isolation
84.40.Az Waveguides, transmission lines, striplines

Relaxor ferroelectricity in strained epitaxial SrTiO3 thin films on DyScO3 substrates

M. D. Biegalski, Y. Jia, D. G. Schlom, S. Trolier-McKinstry, S. K. Streiffer, V. Sherman, R. Uecker, and P. Reiche

Appl. Phys. Lett. 88, 192907 (2006); http://dx.doi.org/10.1063/1.2198088 (3 pages) | Cited 8 times

Online Publication Date: 10 May 2006

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The ferroelectric properties of 500 Å thick strained, epitaxial SrTiO3 films grown on DyScO3 substrates by reactive molecular-beam epitaxy are reported. Despite the near 1% biaxial tensile strain, the x-ray rocking curve full widths at half maximum in ω are as narrow as 7 arc sec (0.002°). The films show a frequency-dependent permittivity maximum near 250 K that is well fit by the Vogel-Fulcher equation. A clear polarization hysteresis is observed below the permittivity maximum, with an in-plane remanent polarization of 10 μC/cm2 at 77 K. The high Tmax is consistent with the biaxial tensile strain state, while the superimposed relaxor behavior is likely due to defects.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.55.-g Dielectric thin films
77.22.Ch Permittivity (dielectric function)
77.22.Ej Polarization and depolarization
77.80.Dj Domain structure; hysteresis
68.60.Bs Mechanical and acoustical properties

Organic light-emitting device luminaire for illumination applications

Brian W. D’Andrade and Julie J. Brown

Appl. Phys. Lett. 88, 192908 (2006); http://dx.doi.org/10.1063/1.2202722 (3 pages) | Cited 19 times

Online Publication Date: 11 May 2006

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The total light output of an organic light-emitting device (OLED) with a truncated square-pyramid luminaire is shown to be 1.8–2.1 times greater than the forward emission of an OLED without a luminaire. Luminaires increase the amount of outcoupled light by reducing waveguiding in the glass substrate, and they are made from 1.2-cm-thick acrylic and attached to the OLED glass substrate using index matching fluid. Based on experimental results and ray tracing models, the ratio of the OLED total emission to the OLED forward emission is found to be independent of luminaire taper angles between 30° and 80°.
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85.60.Jb Light-emitting devices
85.30.De Semiconductor-device characterization, design, and modeling
42.72.-g Optical sources and standards

Subattoampere current induced by single ions in silicon oxide layers of nonvolatile memory cells

G. Cellere, A. Paccagnella, L. Larcher, A. Visconti, and M. Bonanomi

Appl. Phys. Lett. 88, 192909 (2006); http://dx.doi.org/10.1063/1.2194819 (3 pages) | Cited 2 times

Online Publication Date: 11 May 2006

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A single ion impinging on a thin silicon dioxide layer generates a number of electron/hole pairs proportional to its linear energy transfer coefficient. Defects generated by recombination can act as a conductive path for electrons that cross the oxide barrier, thanks to a multitrap-assisted mechanism. We present data on the dependence of this phenomenon on the oxide thickness by using floating gate memory arrays. The tiny number of excess electrons stored in these devices allows for extremely high sensitivity, impossible with any direct measurement of oxide leakage current. Results are of particular interest for next generation devices.
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61.82.-d Radiation effects on specific materials
84.30.Sk Pulse and digital circuits
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
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