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8 May 2006

Volume 88, Issue 19, Articles (19xxxx)

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Appl. Phys. Lett. 88, 193113 (2006); http://dx.doi.org/10.1063/1.2202003 (3 pages)

Fa-Quan He and Ya-Pu Zhao
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Controlled single electron transfer between Si:P dots

T. M. Buehler, V. Chan, A. J. Ferguson, A. S. Dzurak, F. E. Hudson, D. J. Reilly, A. R. Hamilton, R. G. Clark, D. N. Jamieson, C. Yang, C. I. Pakes, and S. Prawer

Appl. Phys. Lett. 88, 192101 (2006); http://dx.doi.org/10.1063/1.2203740 (3 pages) | Cited 17 times

Online Publication Date: 8 May 2006

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We demonstrate electrical control of Si:P double dots in which the potential is defined by nanoscale phosphorus-doped regions. Each dot contains approximately 600 phosphorus atoms and has a diameter close to 30 nm. On application of a differential bias across the dots, electron transfer is observed, using single electron transistors in both dc and rf modes as charge detectors. With the possibility to scale the dots down to a few and even single atoms these results open the way to a new class of precision-doped quantum dots in silicon.
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73.63.Kv Quantum dots

Observation of one-electron charge in an enhancement-mode InAs single-electron transistor at 4.2 K

G. M. Jones, B. H. Hu, C. H. Yang, M. J. Yang, and Y. B. Lyanda-Geller

Appl. Phys. Lett. 88, 192102 (2006); http://dx.doi.org/10.1063/1.2202100 (3 pages) | Cited 1 time

Online Publication Date: 8 May 2006

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We demonstrate experimentally single-electron quantum dots using a single-top-gate transistor configuration on a composite quantum well. The data indicate a 15 meV Coulomb charging energy and a 20 meV orbital energy spacing, which imply a quantum dot of 20 nm in diameter. Combining with the inherent advantage of a large electron g* factor in InAs, our demonstration is significant for a solid state implementation of a scalable quantum computing.
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85.35.Gv Single electron devices
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)

Effect of nitrogen incorporation on the electronic structure and thermal stability of HfO2 gate dielectric

S. J. Wang, J. W. Chai, Y. F. Dong, Y. P. Feng, N. Sutanto, J. S. Pan, and A. C. H. Huan

Appl. Phys. Lett. 88, 192103 (2006); http://dx.doi.org/10.1063/1.2202752 (3 pages) | Cited 35 times

Online Publication Date: 8 May 2006

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The effect of nitrogen incorporation on the electronic structure and thermal stability of HfO2 gate dielectric was investigated by using photoemission study and first-principles calculation. Hafnium oxynitride (HfON) dielectric shows higher thermal stability in comparison to pure HfO2 on Si. Atomic N can passivate O vacancies in the dielectrics during nitridation process, but the N atoms incorporated into interstitial sites cause band gap reduction. Postnitridation annealing is required to activate interstitial N atoms to form stable N–Hf bonds, which will increase the band gap and band offset of as-nitrided dielectric film.
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77.55.-g Dielectric thin films
71.20.Ps Other inorganic compounds
79.60.Bm Clean metal, semiconductor, and insulator surfaces
71.15.-m Methods of electronic structure calculations
61.72.J- Point defects and defect clusters
81.40.Gh Other heat and thermomechanical treatments

Electron trap level in a GaN nanorod p-n junction grown by molecular-beam epitaxy

Y. S. Park, C. M. Park, C. J. Park, H. Y. Cho, Seung Joo Lee, T. W. Kang, S. H. Lee, Jae-Eung Oh, Kyung-Hwa Yoo, and Min-Soo Son

Appl. Phys. Lett. 88, 192104 (2006); http://dx.doi.org/10.1063/1.2203735 (3 pages) | Cited 6 times

Online Publication Date: 9 May 2006

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We have studied the electrical properties of a GaN nanorod p-n junction diode by deep level transient spectroscopy measurements. The p-n junction nanorods were patterned on a SiO2 substrate by using e-beam lithography. In order to confirm the formation of p-n junction, cathodoluminescence and current-voltage measurements, as a function of temperature, were made. The current-voltage curve exhibits strong temperature dependence, suggesting that thermionic emission over a barrier dominates. This barrier most likely corresponds to emission from a deep level in the band. The deep level appears to be an electron trap at Ec-0.40 eV below the conduction band with a capture cross section of 2.22×10 cm2 near the depletion region of the p-n junction.
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85.30.Kk Junction diodes
81.16.Nd Micro- and nanolithography
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
81.05.Ea III-V semiconductors

Ultrafast spectral hole burning spectroscopy of exciton spin flip processes in InAs/GaAs quantum dots

T. Müller, G. Strasser, and K. Unterrainer

Appl. Phys. Lett. 88, 192105 (2006); http://dx.doi.org/10.1063/1.2202721 (3 pages) | Cited 3 times

Online Publication Date: 9 May 2006

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The exciton spin relaxation within the radiative doublet of the exciton ground state in InAs/GaAs self-assembled quantum dots is studied via an ultrafast spectral hole burning technique. In the case of cross-polarized pump and probe pulses a spectral “antihole” emerges due to relaxation of the exciton spin. The measured relaxation time decreases rapidly from 1.15 ns at T = 5 K to 90 ps at 90 K, suggesting exciton-acoustic phonon interaction as the underlying spin relaxation mechanism.
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71.35.-y Excitons and related phenomena
63.22.-m Phonons or vibrational states in low-dimensional structures and nanoscale materials
42.50.Hz Strong-field excitation of optical transitions in quantum systems; multiphoton processes; dynamic Stark shift
42.50.Md Optical transient phenomena: quantum beats, photon echo, free-induction decay, dephasings and revivals, optical nutation, and self-induced transparency
73.21.La Quantum dots
78.47.-p Spectroscopy of solid state dynamics

Temperature dependence of electron-spin coherence in intrinsic bulk GaAs

Tianshu Lai, Xiaodong Liu, Haihong Xu, Zhongxing Jiao, Jinhui Wen, and Weizhu Lin

Appl. Phys. Lett. 88, 192106 (2006); http://dx.doi.org/10.1063/1.2202754 (3 pages) | Cited 9 times

Online Publication Date: 9 May 2006

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Temperature dependence of electron-spin coherence dynamics is investigated for an intrinsic bulk GaAs in the Voigt geometry using the elliptically polarized absorption quantum-beat spectroscopy. Temperature dependences of spin coherence and recombination lifetimes as well as g factor of electrons are reported over a temperature range from 8.1 to 260 K. The temperature dependence of spin coherence lifetime (T2*) agrees well with a reported theoretical calculation and can be fitted well by a relationship T2* ∼ T−1/2, which provides an evidence to support electron-spin decoherence dominated by the Bir-Aronov-Pikus mechanism. The temperature dependence of g factor also agrees well with reported results.
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72.25.Dc Spin polarized transport in semiconductors
72.80.Ey III-V and II-VI semiconductors
78.20.Ls Magneto-optical effects

Mesoscopic terahertz photoelectric switch

Zhenhong Dai and Jun Ni

Appl. Phys. Lett. 88, 192107 (2006); http://dx.doi.org/10.1063/1.2203217 (3 pages) | Cited 1 time

Online Publication Date: 10 May 2006

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We study the effect of a high-frequency radiation field on the time-dependent dynamical behavior of electron transport in a symmetrical AlGaAs/GaAs double-barrier structure. The results show that the external radiation field leads to the switching in advance between different current states in current hysteresis region, whose switching time is shorter than 1 ps. This property provides the potential to use double-barrier structure as a terahertz high-speed photoelectric switch.
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85.60.Bt Optoelectronic device characterization, design, and modeling
84.32.Dd Connectors, relays, and switches
85.30.De Semiconductor-device characterization, design, and modeling
84.40.-x Radiowave and microwave (including millimeter wave) technology

Temperature-dependent built-in potential in organic semiconductor devices

M. Kemerink, J. M. Kramer, H. H. P. Gommans, and R. A. J. Janssen

Appl. Phys. Lett. 88, 192108 (2006); http://dx.doi.org/10.1063/1.2205007 (3 pages) | Cited 21 times

Online Publication Date: 12 May 2006

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The temperature dependence of the built-in voltage of organic semiconductor devices is studied. The results are interpreted using a simple analytical model for the band bending at the electrodes. It is based on the notion that, even at zero current, diffusion may cause a significant charge density in the entire device, and hence a temperature dependent band bending. Both magnitude and temperature dependence of the built-in potential of various devices are consistently described by the model, as the effects of a thin LiF layer between cathode and active layer.
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85.30.De Semiconductor-device characterization, design, and modeling
85.60.Jb Light-emitting devices

Centrosymmetric PbTe/CdTe quantum dots coherently embedded by epitaxial precipitation

W. Heiss, H. Groiss, E. Kaufmann, G. Hesser, M. Böberl, G. Springholz, F. Schäffler, K. Koike, H. Harada, and M. Yano

Appl. Phys. Lett. 88, 192109 (2006); http://dx.doi.org/10.1063/1.2202107 (3 pages) | Cited 30 times

Online Publication Date: 12 May 2006

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A concept for the fabrication of highly symmetric quantum dots that are coherently embedded in a single crystalline matrix is demonstrated. In this approach, the formation of the quantum dots is induced by a transformation of an epitaxial two dimensional quantum well into an array of isolated precipitates with dimensions of about 25 nm. The formation process is driven by the immiscibility of the constituent materials resulting from their different lattice structures. The investigated PbTe/CdTe heterosystem combines two different cubic lattices with almost identical lattice constants. Therefore, the precipitated quantum dots are almost strain-free and near thermodynamic equilibrium they exhibit the shape of small-rhombo-cubo-octahedrons. The PbTe/CdTe quantum dots, grown on GaAs substrates, display intense room temperature luminescence at wavelength of around 3.2 μm, which makes them auspicious for applications in midinfrared photonic devices.
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78.55.Et II-VI semiconductors
68.65.Hb Quantum dots (patterned in quantum wells)
78.67.Hc Quantum dots
64.75.-g Phase equilibria
81.07.St Quantum wells

Anomalous Hall effect and origin of magnetism in Zn1−xCoxO thin films at low Co content

Y. Z. Peng, T. Liew, T. C. Chong, C. W. An, and W. D. Song

Appl. Phys. Lett. 88, 192110 (2006); http://dx.doi.org/10.1063/1.2202140 (3 pages) | Cited 9 times

Online Publication Date: 12 May 2006

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A small anomalous Hall effect signal of a Zn1−xCoxO (x = 0.05) thin film was observed, indicating that there presents sp-d interactions in the Zn1−xCoxO thin film. However, under a self-held setup, we did not obtain observable differences between the M-H curves when the near band electrons were changed. Integrated with our previous results, possible mechanisms for the magnetism of Zn1−xCoxO thin films were proposed based on a picture of spins in a carrier sea.
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73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)
75.70.Ak Magnetic properties of monolayers and thin films
75.50.Pp Magnetic semiconductors
75.50.Dd Nonmetallic ferromagnetic materials
72.20.My Galvanomagnetic and other magnetotransport effects
71.20.Nr Semiconductor compounds

Investigation of work function adjustments by electric dipole formation at the gate/oxide interface in preimplanted NiSi fully silicided metal gates

J. Liu and D. L. Kwong

Appl. Phys. Lett. 88, 192111 (2006); http://dx.doi.org/10.1063/1.2203210 (3 pages) | Cited 7 times

Online Publication Date: 12 May 2006

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The work function adjustments by implanted dopants (P, As, and Sb) in NiSi fully silicided metal gates were investigated. It was found that the work function adjustments only occurred when dopants were segregated at the silicide/dielectric interface after the fully silicided process. The dopant specie, size, and peak concentration at the interface were found to have impacts on work function tuning. The theoretical estimates of work function tuning were calculated using electric dipole domination assumption and confirmed by experimental measurements.
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73.30.+y Surface double layers, Schottky barriers, and work functions
73.40.Ns Metal-nonmetal contacts
61.72.up Other materials
64.75.-g Phase equilibria

Interfacial reactions in a HfO2/TiN/poly-Si gate stack

M. MacKenzie, A. J. Craven, D. W. McComb, and S. De Gendt

Appl. Phys. Lett. 88, 192112 (2006); http://dx.doi.org/10.1063/1.2201891 (3 pages) | Cited 11 times

Online Publication Date: 12 May 2006

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Interface reactions are investigated in a Si(100)/SiO2/HfO2/TiN/poly-Si gate stack using electron-energy-loss spectroscopy. The electron-energy-loss near-edge fine structure on the core edges shows evidence of interface reactions having occurred between the TiN metal gate and surrounding layers. A Si(O,N) phase is observed at the TiN/poly-Si interface.
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68.35.Ct Interface structure and roughness
77.55.-g Dielectric thin films
79.20.Uv Electron energy loss spectroscopy
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