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Applied Physics Letters / Volume 88 / Issue 2 / ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Appl. Phys. Lett. 88, 022103 (2006); doi:10.1063/1.2163709 (3 pages)

Optical study of hot electron transport in GaN: Signatures of the hot-phonon effect

Kejia Wang, John Simon, Niti Goel, and Debdeep Jena

Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556

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(Received 21 September 2005; accepted 13 December 2005; published online 9 January 2006)

The hot-phonon lifetime in GaN is measured by temperature- and electric field-dependent photoluminescence studies of a n-type channel. The rate of increase of electron temperature with the external electric field provides a signature of nonquilibrium hot-phonon accumulation. Hot-electron temperatures are measured directly as a function of applied electric fields, and by comparing theoretical models for electron energy-loss into acoustic and optical phonons, a hot-phonon lifetime of τph = 3 to 4 ps is extracted.

© 2006 American Institute of Physics

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KEYWORDS and PACS

Keywords

gallium compounds, III-V semiconductors, wide band gap semiconductors, hot carriers, phonons, photoluminescence, energy loss of particles

PACS

  • 72.20.Ht

    High-field and nonlinear effects

  • 78.55.Cr

    III-V semiconductors

  • 63.20.-e

    Phonons in crystal lattices

  • 61.85.+p

    Channeling phenomena (blocking, energy loss, etc.)

ARTICLE DATA

Permalink
http://link.aip.org/link/doi/10.1063/1.2163709

PUBLICATION DATA

ISSN:

0003-6951 (print)  
1077-3118 (online)

Publisher:

$abstract.society.value is a Member of CrossRef American Institute of Physics

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