APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

15 May 2006

Volume 88, Issue 20, Articles (20xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 88, 203101 (2006); http://dx.doi.org/10.1063/1.2203932 (3 pages)

Andrea Ponzoni, Elisabetta Comini, Giorgio Sberveglieri, Jun Zhou, Shao Zhi Deng, Ning Sheng Xu, Yong Ding, and Zhong Lin Wang
Enlarge Image | Read More
Return to All Sections
back to top
RSS Feeds

Piezoelectric nonlinearity due to motion of 180° domain walls in ferroelectric materials at subcoercive fields: A dynamic poling model

Susan Trolier-McKinstry, Nazanin Bassiri Gharb, and Dragan Damjanovic

Appl. Phys. Lett. 88, 202901 (2006); http://dx.doi.org/10.1063/1.2203750 (3 pages) | Cited 34 times

Online Publication Date: 16 May 2006

Full Text: Read Online (HTML) | Download PDF

Show Abstract
A mechanism is described whereby 180° domain wall motion can contribute to the electrically induced strain in a ferroelectric material at subcoercive ac electric fields. The field-dependent, largely reversible motion of ferroelectric, 180° domain walls due to an applied ac electric field is considered. The Rayleigh law is modified to describe the piezoelectric response of the system. This results in both a linear dependence of the piezoelectric coefficient on the amplitude of the applied electric field and the creation of a second order harmonic of strain which adds to the electrostrictive response. The model was experimentally confirmed in Pb(Zr1−xTix)O3 thin films.
Show PACS
77.65.Bn Piezoelectric and electrostrictive constants
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.22.Ej Polarization and depolarization
77.80.Dj Domain structure; hysteresis
77.55.-g Dielectric thin films

Nitridation for HfO2 high-k films on Si by an NH3 annealing treatment

M.-H. Cho, K. B. Chung, C. N. Whang, D.-H. Ko, J. H. Lee, and N. I. Lee

Appl. Phys. Lett. 88, 202902 (2006); http://dx.doi.org/10.1063/1.2202390 (3 pages) | Cited 17 times

Online Publication Date: 16 May 2006

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The characteristics of nitrided HfO2 films suggest that the diffusion of Si from the Si substrate to the film surface is induced by annealing in an NH3 ambient and that the incorporation of N is closely related to the diffusion of Si. Changes in the core-level energy state of the N 1s peaks of nitrided HfO2 films indicate that the quantity of N incorporated into the film drastically increases with increasing annealing temperature, especially at temperatures over 900 °C. The incorporated N is mostly bonded to Si that diffused from the Si substrate into the film, while some N is incorporated to HfO2 at high annealing temperature. Some molecular N2 is generated in the film, which is easily diffused out after additional annealing. Moreover, the chemisorbed N in the film is not completely stable, compared to that at the interfacial region: i.e., the N in the film predominantly out diffuses from the film after additional annealing in a N2 ambient.
Show PACS
77.55.-g Dielectric thin films
81.40.Gh Other heat and thermomechanical treatments
66.30.-h Diffusion in solids
73.20.-r Electron states at surfaces and interfaces

Band alignment at the La2Hf2O7/(001)Si interface

G. Seguini, S. Spiga, E. Bonera, M. Fanciulli, A. Reyes Huamantinco, C. J. Först, C. R. Ashman, P. E. Blöchl, A. Dimoulas, and G. Mavrou

Appl. Phys. Lett. 88, 202903 (2006); http://dx.doi.org/10.1063/1.2204572 (3 pages) | Cited 14 times

Online Publication Date: 16 May 2006

Full Text: Read Online (HTML) | Download PDF

Show Abstract
In the perspective of exploring alternative gate dielectrics for the future generation of microelectronic devices, we investigated experimentally and theoretically the interface energy barriers induced on (001) silicon by La2Hf2O7, whose growth has been recently attained by molecular-beam epitaxy. Experimental results show that the 5.6±0.1 eV band gap of La2Hf2O7 is aligned to the band gap of silicon with a valence band offset of 2.4±0.1 eV and a conduction band offset of 2.1±0.1 eV. Density functional theory calculations yield valence band offset values ranging between 1.8 and 2.4 eV.
Show PACS
77.55.-g Dielectric thin films
71.20.Ps Other inorganic compounds
68.35.Md Surface thermodynamics, surface energies
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
71.15.Mb Density functional theory, local density approximation, gradient and other corrections

Charge trapping and dielectric relaxation in connection with breakdown of high-k gate dielectric stacks

Wen Luo, Tao Yuan, Yue Kuo, Jiang Lu, Jiong Yan, and Way Kuo

Appl. Phys. Lett. 88, 202904 (2006); http://dx.doi.org/10.1063/1.2203942 (3 pages) | Cited 6 times

Online Publication Date: 17 May 2006

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Charge trapping/detrapping and dielectric polarization/relaxation of high-k dielectrics have been investigated. Relaxation behaviors of TiN/SiO2/p-Si and TiN/Zr-doped HfOx/SiO2/p-Si capacitors were studied with a ramp-relax method. The latter shows a relaxation current, which signifies the high-k dielectric integrity and disappears at breakdown, while the former does not. The breakdown sequences of TiN/Zr-doped HfOx/SiO2/p-Si and Al/Hf-doped TaOx/silicate/p-Si were identified with relaxation current. For the former, the breakdown initiated at the interfacial SiO2 layer; for the latter, the breakdown starts from the Hf-doped TaOx layer. The breakdown sequence is explained with the material properties and thicknesses of individual layers.
Show PACS
77.22.Gm Dielectric loss and relaxation
77.55.-g Dielectric thin films
77.22.Jp Dielectric breakdown and space-charge effects
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

Omnidirectional terahertz mirrors: A key element for future terahertz communication systems

N. Krumbholz, K. Gerlach, F. Rutz, M. Koch, R. Piesiewicz, T. Kürner, and D. Mittleman

Appl. Phys. Lett. 88, 202905 (2006); http://dx.doi.org/10.1063/1.2205727 (3 pages) | Cited 38 times

Online Publication Date: 17 May 2006

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We present an omnidirectional mirror for the terahertz range made from polypropylene and high-resistivity silicon. The structure is characterized by time-domain terahertz spectroscopy. The experimental data are in good agreement with transfer matrix calculations. In the frequency band between 319 and 375 GHz the mirror is highly reflecting for all incidence angles and s as well as p polarization.
Show PACS
42.79.Bh Lenses, prisms and mirrors
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
84.40.-x Radiowave and microwave (including millimeter wave) technology

Hydrogen-related dynamic dielectric behavior of barium titanate single crystals

W. P. Chen, Y. Wang, H. L. W. Chan, and H. S. Luo

Appl. Phys. Lett. 88, 202906 (2006); http://dx.doi.org/10.1063/1.2206686 (3 pages) | Cited 8 times

Online Publication Date: 18 May 2006

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Barium titanate single crystals had been placed in 0.01M NaOH solution to deposit hydrogen on their electrodes through the electrolysis of water. Two kinds of time-dependent changes in dielectric properties of the single crystals were observed: One occurred in the course of hydrogen deposition and the other lasted for a long period of time after the deposition. The diffusion of hydrogen and in and out of the single crystals may be the cause for the changes. This hydrogen-related dynamic dielectric behavior clearly shows that hydrogen is an important mobile ion other than oxygen vacancy in perovskite-type lattice. Extra attention should be paid to the role of hydrogen in time-dependent property changes, including resistance degradation and ferroelectric aging, of perovskite-type ferroelectric titanates.
Show PACS
77.80.-e Ferroelectricity and antiferroelectricity
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
82.45.Un Dielectric materials in electrochemistry
82.45.Hk Electrolysis
66.30.J- Diffusion of impurities
61.72.J- Point defects and defect clusters
Return to All Sections
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close