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15 May 2006

Volume 88, Issue 20, Articles (20xxxx)

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Appl. Phys. Lett. 88, 203101 (2006); http://dx.doi.org/10.1063/1.2203932 (3 pages)

Andrea Ponzoni, Elisabetta Comini, Giorgio Sberveglieri, Jun Zhou, Shao Zhi Deng, Ning Sheng Xu, Yong Ding, and Zhong Lin Wang
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1.54 μm Si:Er light emitting diode with memory function

B. A. Andreev, Z. F. Krasilnik, D. I. Kryzhkov, V. P. Kuznetsov, T. Gregorkiewicz, and W. Jantsch

Appl. Phys. Lett. 88, 201101 (2006); http://dx.doi.org/10.1063/1.2203935 (3 pages) | Cited 1 time

Online Publication Date: 15 May 2006

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We report a memory effect in electroluminescence of Er-doped silicon light emitting diodes: applying a voltage pulse in reverse-bias direction below breakdown we observe 1.54 μm emission only, if a forward pulse was issued before. This effect occurs for temperatures T ⩽ 120 K in sublimation molecular-beam epitaxy grown structures. This finding opens perspectives for the development of a fully complementary metal-oxide-semiconductor compatible electro-optical converter with a memory function, operating in the 1.5 μm telecommunication band. Such an element could find numerous applications in telecommunication and silicon photonics and optoelectronics circuitry.
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85.60.Jb Light-emitting devices
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
42.82.Gw Other integrated-optical elements and systems

Model for mode locking in quantum dot lasers

E. A. Viktorov, Paul Mandel, Andrei G. Vladimirov, and Uwe Bandelow

Appl. Phys. Lett. 88, 201102 (2006); http://dx.doi.org/10.1063/1.2203937 (3 pages) | Cited 28 times

Online Publication Date: 15 May 2006

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We propose a model for passive mode locking in quantum dot lasers and report on specific dynamical properties of the regime which is characterized by a fast gain recovery. No Q-switching instability has been found accompanying the mode locking. Bistability can occur between the mode locking regime and the nonlasing state.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Fc Modulation, tuning, and mode locking
42.55.Rz Doped-insulator lasers and other solid state lasers
42.65.Pc Optical bistability, multistability, and switching, including local field effects

Ultraviolet lasing in high-order bands of three-dimensional ZnO photonic crystals

Michael Scharrer, Alexey Yamilov, Xiaohua Wu, Hui Cao, and Robert P. H. Chang

Appl. Phys. Lett. 88, 201103 (2006); http://dx.doi.org/10.1063/1.2203939 (3 pages) | Cited 46 times

Online Publication Date: 15 May 2006

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UV lasing in three-dimensional ZnO photonic crystals is demonstrated at room temperature. The photonic crystals are inverse opals with high refractive index contrast that simultaneously confine light and provide optical gain. Highly directional lasing with tunable wavelength is obtained by optical pumping. Comparison of the experimental results to the calculated band structure shows that lasing occurs in high-order bands with abnormally low group velocity. This demonstrates that the high-order band structure of three-dimensional photonic crystals can be used to effectively confine light and enhance emission. Our findings may also impact other applications of photonic crystal devices.
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42.70.Qs Photonic bandgap materials
78.45.+h Stimulated emission
42.55.Tv Photonic crystal lasers and coherent effects
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
42.55.Px Semiconductor lasers; laser diodes
42.60.Fc Modulation, tuning, and mode locking

Whispering gallery mode of modified octagonal quasiperiodic photonic crystal single-defect microcavity and its side-mode reduction

Po-Tsung Lee, Tsan-Wen Lu, Feng-Mao Tsai, Tien-Chang Lu, and Hao-Chung Kuo

Appl. Phys. Lett. 88, 201104 (2006); http://dx.doi.org/10.1063/1.2203943 (3 pages) | Cited 7 times

Online Publication Date: 15 May 2006

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Single-mode lasing action is obtained from a modified octagonal quasiperiodic photonic crystal single-defect microcavity which supports a well-confined whispering gallery mode with ultralow threshold and high-quality factor. Side-mode reduction is achieved by inserting a central air-hole in the cavity region.
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42.55.Sa Microcavity and microdisk lasers
42.55.Tv Photonic crystal lasers and coherent effects
42.55.Rz Doped-insulator lasers and other solid state lasers
42.60.By Design of specific laser systems

Lateral photocurrent spectroscopy on self-assembled PbSe quantum dots

M. Simma, T. Fromherz, A. Raab, G. Springholz, and G. Bauer

Appl. Phys. Lett. 88, 201105 (2006); http://dx.doi.org/10.1063/1.2202127 (3 pages) | Cited 9 times

Online Publication Date: 15 May 2006

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Wavelength- and temperature-dependent lateral photocurrent measurements were performed on self-assembled PbSe/PbEuTe quantum-dot superlattices. The comparison of the measured data with absorption spectra calculated within the envelope function approach allows a clear identification of the different features in the photocurrent spectra. The photocurrent signal from the dots is observed over a wide temperature range and no quenching occurs even at 5 K. This indicates a type-II band alignment for the strained PbSe/PbEuTe quantum-dots.
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73.21.La Quantum dots
79.60.Bm Clean metal, semiconductor, and insulator surfaces

Highly dispersive photonic crystal-based coupled-cavity structures

A. Talneau, G. Aubin, A. Uddhammar, A. Berrier, M. Mulot, and S. Anand

Appl. Phys. Lett. 88, 201106 (2006); http://dx.doi.org/10.1063/1.2203955 (3 pages) | Cited 6 times

Online Publication Date: 15 May 2006

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We measured the wavelength dependence of the group velocity dispersion (GVD) for different photonic-crystal coupled-cavity structures through a phase analysis of the transmitted modulated signal. GVD values as large as 106–107 times the dispersion of a standard single mode fiber are obtained when operating close to the band edge of the miniband, in agreement with the calculated group index. The GVD is found to be smaller for the structure based on more open cavities.
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42.70.Qs Photonic bandgap materials
42.25.Bs Wave propagation, transmission and absorption

Toward nκd spectroscopy: Analytic solution of the three-phase model of polarimetry in the thin-film limit

I. K. Kim and D. E. Aspnes

Appl. Phys. Lett. 88, 201107 (2006); http://dx.doi.org/10.1063/1.2203967 (3 pages) | Cited 2 times

Online Publication Date: 15 May 2006

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We find an analytic solution of the three-phase (substrate/overlayer/ambient) model of polarimetry in the thin-film limit, which allows overlayer thicknesses d and refractive indices math = n+iκ to be determined from measured changes Δρ/ρ of the complex reflectance ratio ρ and ΔRp/Rp or ΔRs/Rs of the p- or s-polarized reflectances Rp or Rs, from a quadratic equation without the need for potentially unstable numerical methods. We also find a transformation of the data that extends the range of accuracy by up to an order of magnitude without introducing additional mathematical complications. The results are illustrated by the application to a layer of physisorbed H2O on oxidized GaAs, and show that the wavelength-by-wavelength spectroscopy of adsorbed monolayers is now within range of existing polarimetric technology.
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07.60.Fs Polarimeters and ellipsometers
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
78.66.Fd III-V semiconductors
68.43.-h Chemisorption/physisorption: adsorbates on surfaces

Quasiphase matching of second-harmonic generation in quantum cascade lasers by Stark shift of electronic resonances

Mikhail A. Belkin, Mariano Troccoli, Laurent Diehl, Federico Capasso, Alexey A. Belyanin, Deborah L. Sivco, and Alfred Y. Cho

Appl. Phys. Lett. 88, 201108 (2006); http://dx.doi.org/10.1063/1.2203938 (3 pages) | Cited 5 times

Online Publication Date: 16 May 2006

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We demonstrate a quasiphase matching scheme for second-harmonic generation in quantum cascade lasers with integrated resonant nonlinearity. Modulation of the nonlinear susceptibility is achieved by the periodic modulation of the bias voltage along the ridge waveguide leading to a periodic shift of electronic resonances and a change in the electron population in different energy levels. An up to tenfold enhancement of the conversion efficiency is observed. This technique is applicable to any resonant nonlinear optical process in quantum wells.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.Fc Modulation, tuning, and mode locking

Distributed-feedback GaInAs/AlAsSb quantum-cascade lasers operating at 300 K

Q. Yang, W. Bronner, C. Manz, B. Raynor, H. Menner, Ch. Mann, K. Köhler, and J. Wagner

Appl. Phys. Lett. 88, 201109 (2006); http://dx.doi.org/10.1063/1.2203957 (3 pages) | Cited 4 times

Online Publication Date: 16 May 2006

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Short-wavelength (λ ∼ 4 μm) single-mode distributed-feedback GaInAs/AlAsSb quantum-cascade lasers operating in pulsed mode up to room temperature (300 K) have been demonstrated by etching an index-coupled first-order distributed-feedback grating into the upper GaInAs separate confinement layer. The temperature-dependent wavelength shift of the distributed-feedback lasers is −0.14 cm−1/K (0.238 nm/K). For devices with a size of 18 μm×2.9 mm mounted epilayer-up with as-cleaved facets, a maximum peak power per facet of 840 mW has been achieved at 77 K and 4 mW at 300 K. The characteristic temperature T0 of the threshold current density is 105 K.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems

Quantum-well saturable absorber at 1.55 μm on GaAs substrate with a fast recombination rate

M. Le Dû, J.-C. Harmand, O. Mauguin, L. Largeau, L. Travers, and J.-L. Oudar

Appl. Phys. Lett. 88, 201110 (2006); http://dx.doi.org/10.1063/1.2204447 (3 pages) | Cited 14 times

Online Publication Date: 16 May 2006

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We propose and realize a structure designed for fast saturable absorber devices grown on GaAs substrate. The active region consists of a 1.55 μm absorbing GaInNAsSb quantum well (QW) surrounded by two narrow QWs of GaAsN with a N concentration up to 13%. Photoexcited carriers in the GaInNAsSb QW are expected to recombine by tunneling into the wide distribution of subband gap states created in the GaAsN QW. An absorption study shows that edge energy and excitonic peak intensity of the GaInNAsSb QW are not affected by the proximity of the GaAsN QWs. Pump-probe measurements provide information on the carrier relaxation dynamics which is dependent on spacer thickness, as expected for a tunneling process. We show that this process can be enhanced by increasing the N content in the GaAsN layers. Using this design, we have realized a monolithic GaAs-based saturable absorber microcavity with a 1/e recovery time of 12 ps.
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78.67.De Quantum wells
73.40.Gk Tunneling
42.50.Gy Effects of atomic coherence on propagation, absorption, and amplification of light; electromagnetically induced transparency and absorption
71.35.-y Excitons and related phenomena

Degradation mechanisms in InGaN laser diodes grown on bulk GaN crystals

L. Marona, P. Wisniewski, P. Prystawko, I. Grzegory, T. Suski, S. Porowski, P. Perlin, R. Czernecki, and M. Leszczyński

Appl. Phys. Lett. 88, 201111 (2006); http://dx.doi.org/10.1063/1.2204845 (3 pages) | Cited 19 times

Online Publication Date: 16 May 2006

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We have investigated the aging processes in InGaN laser diodes fabricated by metal organic vapor phase epitaxy on low-dislocation-density, high-pressure-grown bulk gallium nitride crystals. The measured threshold current turned out to be a square root function of aging time, indicating the importance of diffusion for device degradation. The differential efficiency, in contrast, was roughly constant during these experiments. From these two observations we can conclude that the main reason for degradation is the diffusion-enhanced increase of nonradiative recombination within the active layer of the laser diode. Additionally, microscopic studies of the degraded structures did not reveal any new dislocations within the active area of the aged diodes, thus identifying point defects as a source of nonradiative processes.
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42.55.Px Semiconductor lasers; laser diodes
61.72.Hh Indirect evidence of dislocations and other defects (resistivity, slip, creep, strains, internal friction, EPR, NMR, etc.)
81.40.Cd Solid solution hardening, precipitation hardening, and dispersion hardening; aging
66.30.Lw Diffusion of other defects
61.72.J- Point defects and defect clusters

GaBiAs: A material for optoelectronic terahertz devices

K. Bertulis, A. Krotkus, G. Aleksejenko, V. Pačebutas, R. Adomavičius, G. Molis, and S. Marcinkevičius

Appl. Phys. Lett. 88, 201112 (2006); http://dx.doi.org/10.1063/1.2205180 (3 pages) | Cited 52 times

Online Publication Date: 16 May 2006

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GaBiAs layers have been grown by molecular beam epitaxy at low (270–330 °C) temperatures and were characterized by several experimental techniques. It was shown that the spectral photosensitivity cutoff wavelength reaches ∼ 1.4 μm when the growth temperature is as low as 280 °C. Optical pump–terahertz probe measurements made on these layers have evidenced that the electron trapping time decreases with decreasing growth temperature from 20 to about 1 ps. GaBiAs layers were used for manufacturing photoconductive terahertz emitters and detectors, which, when excited with Ti:sapphire laser pulses, have demonstrated a signal bandwidth of 3 THz.
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07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
85.60.Gz Photodetectors (including infrared and CCD detectors)

External cavity quantum-cascade laser tunable from 8.2 to 10.4 μm using a gain element with a heterogeneous cascade

Richard Maulini, Arun Mohan, Marcella Giovannini, Jérôme Faist, and Emilio Gini

Appl. Phys. Lett. 88, 201113 (2006); http://dx.doi.org/10.1063/1.2205183 (3 pages) | Cited 54 times

Online Publication Date: 17 May 2006

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A heterogeneous quantum-cascade structure based on two bound-to-continuum designs emitting at 9.6 and 8.4 μm is presented. Its spontaneous emission spectrum at room temperature has a full width at half maximum of 350 cm−1 and shows a variation of intensity of less than 20% over more than 200 cm−1. External cavity lasers using a grating in Littrow configuration and antireflection coated chips with this active region could be tuned over 265 cm−1 from 8.2 to 10.4 μm, that is, over 24% of the center wavelength.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.Fc Modulation, tuning, and mode locking

Room-temperature, high-power, and continuous-wave operation of distributed-feedback quantum-cascade lasers at λ ∼ 9.6 μm

S. R. Darvish, S. Slivken, A. Evans, J. S. Yu, and M. Razeghi

Appl. Phys. Lett. 88, 201114 (2006); http://dx.doi.org/10.1063/1.2205730 (3 pages) | Cited 13 times

Online Publication Date: 17 May 2006

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High-power continuous-wave (cw) operation of distributed-feedback quantum-cascade lasers is reported. Continuous-wave output powers of 100 mW at 25 °C and 20 mW at 50 °C are obtained. The device exhibits a cw threshold current density of 1.34 kA/cm2, a maximum cw wall-plug efficiency of 1% at 25 °C, and a characteristic temperature of ∼ 190 K in pulsed mode. Single-mode emission near 9.6 μm with a side-mode suppression ratio of ≥ 30 dB and a tuning range of 2.89 cm−1 from 15 to 50 °C is obtained.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.Fc Modulation, tuning, and mode locking

High-power quantum cascade lasers grown by low-pressure metal organic vapor-phase epitaxy operating in continuous wave above 400 K

L. Diehl, D. Bour, S. Corzine, J. Zhu, G. Höfler, M. Lončar, M. Troccoli, and Federico Capasso

Appl. Phys. Lett. 88, 201115 (2006); http://dx.doi.org/10.1063/1.2203964 (3 pages) | Cited 56 times

Online Publication Date: 17 May 2006

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High-power quantum cascade lasers (QCLs) working in continuous wave (cw) above 400 K are presented. The material was grown by low-pressure metal organic vapor-phase epitaxy and processed into narrow buried heterostructure lasers. A cw output power of 204 mW was obtained at 300 K with an 8.38 μm wavelength, 3 mm long and 7.5 μm wide coated laser. The device operates in cw mode above 400 K, which exceeds the previous maximum cw temperature operation of QCLs by approximately 60 K. Preliminary reliability data obtained by accelerated aging tests indicate a remarkable robustness of the lasers.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.15.Kk Vapor phase epitaxy; growth from vapor phase

Antireflective subwavelength structures on crystalline Si fabricated using directly formed anodic porous alumina masks

Hitoshi Sai, Homare Fujii, Koji Arafune, Yoshio Ohshita, Masafumi Yamaguchi, Yoshiaki Kanamori, and Hiroo Yugami

Appl. Phys. Lett. 88, 201116 (2006); http://dx.doi.org/10.1063/1.2205173 (3 pages) | Cited 46 times

Online Publication Date: 18 May 2006

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A simple fabrication technique for subwavelength structured (SWS) surfaces by means of anodic porous alumina masks directly formed on Si substrates was proposed and demonstrated. By this technique, SWS surfaces were fabricated on polished single-crystalline Si and chemically etched as-cut multicrystalline Si wafers. Smoothly tapered SWS surfaces with a periodicity of 100 nm and a height of 300–400 nm were obtained. A low reflectivity below 1% was observed from 300 to 1000 nm for both of the wafers, in agreement with numerical simulation. After thermal annealing at 800 °C, the reflectivity of the SWS surface increased to 3%.
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81.05.Cy Elemental semiconductors
68.47.Fg Semiconductor surfaces
81.65.Cf Surface cleaning, etching, patterning
61.72.Cc Kinetics of defect formation and annealing
42.86.+b Optical workshop techniques
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