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12 Jun 2006

Volume 88, Issue 24, Articles (24xxxx)

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Appl. Phys. Lett. 88, 243101 (2006); http://dx.doi.org/10.1063/1.2211007 (3 pages)

G. H. Du, F. Xu, Z. Y. Yuan, and G. Van Tendeloo
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Photoluminescence properties peculiar to the Mn-related transition in a lightly alloyed ZnMnO thin film grown by pulsed laser deposition

M. Nakayama, H. Tanaka, K. Masuko, T. Fukushima, A. Ashida, and N. Fujimura

Appl. Phys. Lett. 88, 241908 (2006); http://dx.doi.org/10.1063/1.2209719 (3 pages) | Cited 8 times

Online Publication Date: 13 June 2006

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We have investigated photoluminescence properties of ZnO and Zn0.95Mn0.05O thin films at 10 K grown on a (000math) ZnO crystal substrate by pulsed laser deposition. The structural characterization with x-ray diffraction and atomic force microscopy demonstrates the pseudomorphic growth of the Zn0.95Mn0.05O thin film and the atomically smooth surface. It has been found that a photoluminescence band originating from the d-d transition of Mn2+ in the Zn0.95Mn0.05O thin film appears in the energy region of deep-level transitions in a ZnO crystal: The photoluminescence-decay time is in the order of sub-milliseconds. The photoluminescence-excitation spectrum of the Mn-related transition exhibits a peaky structure with a broad profile at the energy lower than the A-exciton energy by ∼ 100 meV. This indicates that the light incorporation of Mn to ZnO leads to a negative energy shift of the band-gap energy. The broad profile of the band-edge transition observed in the photoluminescence-excitation spectrum suggests that the incorporation of Mn produces remarkable random-potential fluctuations.
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78.66.Hf II-VI semiconductors
78.55.Et II-VI semiconductors
71.35.-y Excitons and related phenomena
71.55.Gs II-VI semiconductors

Photorefractive effects in magnesium doped lithium niobate whispering gallery mode resonators

Anatoliy A. Savchenkov, Andrey B. Matsko, Dmitry Strekalov, Vladimir S. Ilchenko, and Lute Maleki

Appl. Phys. Lett. 88, 241909 (2006); http://dx.doi.org/10.1063/1.2212055 (3 pages) | Cited 3 times

Online Publication Date: 14 June 2006

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We report on the study of near-infrared photorefractivity in highly Mg doped as-grown congruent LiNbO3 forming a whispering gallery mode resonator. The resonator is pumped with 780 nm light. We have observed a change of the ordinary index of refraction of the material exceeding 8×10−5. We show that the basic features of the photorefraction in this type of crystal is different from the photorefraction in nominally pure as-grown congruent LiNbO3 and explain the origin of this difference.
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78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
42.70.Gi Light-sensitive materials

Mg–Ti–H thin films for smart solar collectors

D. M. Borsa, A. Baldi, M. Pasturel, H. Schreuders, B. Dam, R. Griessen, P. Vermeulen, and P. H. L. Notten

Appl. Phys. Lett. 88, 241910 (2006); http://dx.doi.org/10.1063/1.2212287 (3 pages) | Cited 35 times

Online Publication Date: 14 June 2006

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Mg–Ti–H thin films are found to have very attractive optical properties: they absorb 87% of the solar radiation in the hydrogenated state and only 32% in the metallic state. Furthermore, in the absorbing state Mg–Ti–H has a low emissivity; at 400 K only 10% of blackbody radiation is emitted. The transition between both optical states is fast, robust, and reversible. The sum of these properties highlights the applicability of such materials as switchable smart coatings in solar collectors.
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42.79.Ek Solar collectors and concentrators
78.66.Bz Metals and metallic alloys
42.70.-a Optical materials

GaAs quantum dots with a high density on a GaAs (111)A substrate

Jong Su Kim, Mun Seok Jeong, Clare C. Byeon, Do-Kyeong Ko, Jongmin Lee, Jin Soo Kim, In-Soo Kim, and Nobuyuki Koguchi

Appl. Phys. Lett. 88, 241911 (2006); http://dx.doi.org/10.1063/1.2213012 (3 pages) | Cited 5 times

Online Publication Date: 14 June 2006

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The GaAs quantum dots (QDs) on an AlGaAs/GaAs (111)A surface grown by a droplet epitaxy have a density of 1.6×1011/cm2, which is relatively higher than those (1.3×1010/cm2) on an AlGaAs/GaAs (001) surface. The formation of highly dense GaAs QDs on the (111)A surface can be explained by the relatively short surface migration of Ga atoms. The GaAs QDs on AlGaAs/GaAs (111)A showed the intense photoluminescence (PL) and a relatively narrower PL linewidth compared to that of the GaAs QDs on AlGaAs/GaAs (001), indicating that the QDs on the GaAs (111)A substrate have a high crystal quality and high uniformity than those on GaAs (001).
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68.65.Hb Quantum dots (patterned in quantum wells)
78.67.Hc Quantum dots
66.30.J- Diffusion of impurities
78.55.Cr III-V semiconductors

Determination of transformation stresses of shape memory alloy thin films: A method based on spherical indentation

Wenyi Yan, Qingping Sun, Xi-Qiao Feng, and Linmao Qian

Appl. Phys. Lett. 88, 241912 (2006); http://dx.doi.org/10.1063/1.2213018 (3 pages) | Cited 8 times

Online Publication Date: 14 June 2006

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The forward and reverse transformation processes of superelastic shape memory alloys (SMAs) under spherical indentation are analyzed. We found that there exist two characteristic points, the bifurcating point and the returning point, in an indentation curve. The corresponding bifurcation force and return force, respectively, rely on the forward transformation stress and the reverse transformation stress. A method to determine the transformation stresses of SMA from the measure of the bifurcation and return forces is proposed. Additionally, we suggest a slope approach to determine the values of the two forces with high accuracy.
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68.60.Bs Mechanical and acoustical properties
64.70.K- Solid-solid transitions
62.20.F- Deformation and plasticity
81.40.Lm Deformation, plasticity, and creep
62.20.M- Structural failure of materials
81.40.Np Fatigue, corrosion fatigue, embrittlement, cracking, fracture, and failure

Design of Cu8Zr5-based bulk metallic glasses

L. Yang, J. H. Xia, Q. Wang, C. Dong, L. Y. Chen, X. Ou, J. F. Liu, J. Z. Jiang, K. Klementiev, K. Saksl, H. Franz, J. R. Schneider, and L. Gerward

Appl. Phys. Lett. 88, 241913 (2006); http://dx.doi.org/10.1063/1.2213020 (3 pages) | Cited 28 times

Online Publication Date: 14 June 2006

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Basic polyhedral clusters have been derived from intermetallic compounds at near-eutectic composition by considering a dense packing and random arrangement of atoms at shell sites. Using such building units, bulk metallic glasses can be formed. This strategy was verified in the Cu–Zr binary system, where we have demonstrated the existence of Cu8Zr5 icosahedral clusters in Cu61.8Zr38.2, Cu64Zr36, and Cu64.5Zr35.5 amorphous alloys. Furthermore, ternary bulk metallic glasses can be developed by doping the basic Cu–Zr alloy with a minority element. This hypothesis was confirmed in systems (Cu0.618Zr0.382)100−xNbx, where x = 1.5 and 2.5 at. %, and (Cu0.618Zr0.382)98Sn2. The present results may open a route to prepare amorphous alloys with improved glass forming ability.
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81.05.Kf Glasses (including metallic glasses)
61.43.Fs Glasses
61.72.S- Impurities in crystals

High quality thin GaN templates grown by hydride vapor phase epitaxy on sapphire substrates

D. Martin, J. Napierala, M. Ilegems, R. Butté, and N. Grandjean

Appl. Phys. Lett. 88, 241914 (2006); http://dx.doi.org/10.1063/1.2213175 (3 pages) | Cited 11 times

Online Publication Date: 14 June 2006

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The growth by hydride vapor phase epitaxy (HVPE) of high quality thin GaN layers (d = 8 μm) on c-plane sapphire substrates with dislocation densities lower than 2×108 cm−2 is demonstrated using a two-step process similar to that of metal organic vapor phase epitaxy (MOVPE). Ex situ surface preparation and nucleation layer thickness are shown to be critical factors in achieving these high quality epilayers as they allow controlling the polarity and the dislocation density, respectively. Furthermore, we demonstrate that in situ reflectivity monitoring applied to HVPE is a powerful technique for rapidly optimizing the growth parameters. As a result, thin HVPE-grown GaN layers with state of the art MOVPE GaN quality are obtained as demonstrated through structural and optical characterizations.
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81.05.Ea III-V semiconductors
81.15.Kk Vapor phase epitaxy; growth from vapor phase
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
78.66.Fd III-V semiconductors
68.55.A- Nucleation and growth
68.55.-a Thin film structure and morphology

Crystallographic anisotropy of wear on a polycrystalline diamond surface

Bassem S. El-Dasher, Jeremy J. Gray, Joseph W. Tringe, Juergen Biener, Alex V. Hamza, Christoph Wild, Eckhard Wörner, and Peter Koidl

Appl. Phys. Lett. 88, 241915 (2006); http://dx.doi.org/10.1063/1.2213180 (3 pages) | Cited 7 times

Online Publication Date: 14 June 2006

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We correlate topography and diffraction measurements to demonstrate that grain orientation profoundly influences polishing rates in polycrystalline diamond synthesized by chemical vapor deposition. Grains oriented with {111} or {100} planes perpendicular to the surface normal polish at significantly lower rates compared with grains of all other orientations when the surface is polished in continuously varying in-plane directions. These observations agree with predictions of the periodic bond chain vector model, developed previously for single crystals, and indicate that the polishing rate depends strongly on the number of periodic bond chain vectors that are within 10° of the exposed surface plane.
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81.05.U- Carbon/carbon-based materials
81.40.Pq Friction, lubrication, and wear
62.20.Qp Friction, tribology, and hardness
68.35.Gy Mechanical properties; surface strains
68.35.B- Structure of clean surfaces (and surface reconstruction)

Direct measurement of spatial distortions of charge density waves in K0.3MoO3

Chao-hung Du, Yen-Ru Lee, Chung-Yu Lo, Hsiu-Hau Lin, Shih-Lin Chang, Mau-Tsu Tang, Yuri P. Stetsko, and Jey-Jau Lee

Appl. Phys. Lett. 88, 241916 (2006); http://dx.doi.org/10.1063/1.2213198 (3 pages) | Cited 2 times

Online Publication Date: 14 June 2006

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Using x-ray scattering and multiple diffraction on a charge density wave (CDW) material, K0.3MoO3, under applied voltages, we demonstrate that the occurrence of nonlinear conductivity caused by the periodic media is through the internal deformation of the CDW lattice, i.e., a phase jump of 2π, as the applied voltage exceeds the threshold. From the evolution of the measured peak width of satellite reflections as a function of the field strength, we also report that the CDW lattice can be driven to move and undergo a dynamic phase transition from the disordered pinning state to ordered moving solid state and then to disordered moving liquid.
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71.45.Lr Charge-density-wave systems
78.70.Ck X-ray scattering
72.80.Sk Insulators
81.40.Lm Deformation, plasticity, and creep
64.70.K- Solid-solid transitions
64.70.D- Solid-liquid transitions

Role of edge dislocations in enhancing the yellow luminescence of n-type GaN

D. G. Zhao, D. S. Jiang, Hui Yang, J. J. Zhu, Z. S. Liu, S. M. Zhang, J. W. Liang, X. Li, X. Y. Li, and H. M. Gong

Appl. Phys. Lett. 88, 241917 (2006); http://dx.doi.org/10.1063/1.2213509 (3 pages) | Cited 17 times

Online Publication Date: 14 June 2006

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We investigate the origin of yellow luminescence in n-type GaN. It is found that the relative intensity of yellow luminescence increases as the full width at half maximum of the x-ray diffraction rocking curve at the (102) plane increases. This indicates that the yellow luminescence is related to the edge dislocation density. In addition, the relative intensity of yellow luminescence is confirmed to increase with increasing Si doping for the high quality GaN we have obtained. We propose that the yellow luminescence is effectively enhanced by the transition from donor impurities such as Si to acceptors around the edge dislocations in n-type GaN.
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78.55.Cr III-V semiconductors
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
61.72.S- Impurities in crystals
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Spatial imaging and mechanical control of spin coherence in strained GaAs epilayers

H. Knotz, A. W. Holleitner, J. Stephens, R. C. Myers, and D. D. Awschalom

Appl. Phys. Lett. 88, 241918 (2006); http://dx.doi.org/10.1063/1.2210794 (3 pages) | Cited 11 times

Online Publication Date: 14 June 2006

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The effect of uniaxial tensile strain on spin coherence in n-type GaAs epilayers is probed using time-resolved Kerr rotation, photoluminescence, and optically detected nuclear magnetic resonance spectroscopies. The band gap, electron spin lifetime, electron g factor, and nuclear quadrupole splitting are simultaneously imaged over millimeter scale areas of the epilayers for continuously varying values of strain. All-optical nuclear magnetic resonance techniques allow access to the strain-induced nuclear quadrupolar resonance splitting in field regimes not easily addressable using conventional optically detected nuclear magnetic resonance.
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68.60.Bs Mechanical and acoustical properties
78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors
78.47.-p Spectroscopy of solid state dynamics
76.60.-k Nuclear magnetic resonance and relaxation
71.18.+y Fermi surface: calculations and measurements; effective mass, g factor

Stability of electron-beam poling in N or Ge-doped H:SiO2 films

Q. Liu, B. Poumellec, R. Blum, G. Girard, J.-E. Bourée, A. Kudlinski, and G. Martinelli

Appl. Phys. Lett. 88, 241919 (2006); http://dx.doi.org/10.1063/1.2208960 (3 pages) | Cited 5 times

Online Publication Date: 14 June 2006

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We study the thermal stability of the second-harmonic signal in electron-beam poled silica based thin films developed for this application. Effects of N or Ge concentration as dopant, on one hand, and hydroxyl species, on the other hand, are tested. We conclude that water molecules inducing an ionic conductivity are detrimental to the e-beam poling efficiency and have to be avoided. Nevertheless, despite such precaution, the stability of the second-harmonic signal in an e-beam poled sample is worse than in a thermally poled sample.
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78.66.Nk Insulators
66.30.H- Self-diffusion and ionic conduction in nonmetals
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
61.80.Fe Electron and positron radiation effects
61.72.S- Impurities in crystals

Tetrastack: Colloidal diamond-inspired structure with omnidirectional photonic band gap for low refractive index contrast

T. T. Ngo, C. M. Liddell, M. Ghebrebrhan, and J. D. Joannopoulos

Appl. Phys. Lett. 88, 241920 (2006); http://dx.doi.org/10.1063/1.2206111 (3 pages) | Cited 22 times

Online Publication Date: 15 June 2006

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Omnidirectional photonic band gaps opening at low values of refractive index contrast have been found for a nonspherical colloid-based photonic crystal structure. A mechanically stable design is described for the diamondlike photonic crystal composed of colloidal tetrahedra. The proposed tetrastack structure displays omnidirectional 2–3 band gap over a large range of filling fractions, refractive index contrasts, and building block orientations. The threshold refractive index for the inverted tetrastack structure was 1.94. A gap width of 25.3% relative to the center frequency was obtained for an inverted tetrastack with a 0.21 filling fraction of silicon.
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42.70.Qs Photonic bandgap materials
82.70.Dd Colloids
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Neutron-enhanced annealing of radiation damage formed by self-ion implantation in silicon

A. Kinomura, A. Chayahara, Y. Mokuno, N. Tsubouchi, Y. Horino, T. Yoshiie, Y. Hayashi, Q. Xu, Y. Ito, R. Ishigami, and K. Yasuda

Appl. Phys. Lett. 88, 241921 (2006); http://dx.doi.org/10.1063/1.2211927 (3 pages)

Online Publication Date: 15 June 2006

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The annealing effect of neutron irradiation has been observed for radiation damage in self-ion implanted silicon. Si samples implanted with (0.5–2)×1015 Si/cm2 were neutron irradiated at 400 °C with the total number of displacements of 8.8×10−3 dpa. A heavily disordered (not amorphized) sample clearly showed damage annealing enhanced by the neutron irradiation. The annealing efficiency (the ratio of annealed defects to atomic displacements) was calculated to be 1.3 defects/displacement. This annealing efficiency was compared with the results of previous ion beam annealing studies.
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61.72.Cc Kinetics of defect formation and annealing
61.82.Fk Semiconductors
61.80.Hg Neutron radiation effects
61.80.Jh Ion radiation effects
61.72.uf Ge and Si

Structural analysis of cubic boron nitride films by ultraviolet Raman spectroscopy

K. M. Leung, H. Q. Li, Y. S. Zou, K. L. Ma, Y. M. Chong, Q. Ye, W. J. Zhang, S. T. Lee, and I. Bello

Appl. Phys. Lett. 88, 241922 (2006); http://dx.doi.org/10.1063/1.2207994 (3 pages) | Cited 6 times

Online Publication Date: 15 June 2006

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Cubic boron nitride (BN) films with improved crystallinity are deposited by physical vapor deposition at an extremely low substrate bias (−35 V). The films are characterized by UV Raman in association with Fourier transformed infrared (FTIR) spectroscopy. The influences of bias voltage and film thickness on the characterizations are investigated. UV Raman, in contrast to FTIR, is demonstrated to be a more powerful tool with high sensitivity for quantitative and/or qualitative evaluation of the phase purity and crystallinity, especially as the film thickness increases. Hexagonal BN inclusions (less than 1%), not evident in FTIR, are clearly revealed by UV Raman analysis.
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81.05.Hd Other semiconductors
68.55.-a Thin film structure and morphology
78.66.Li Other semiconductors
78.30.Hv Other nonmetallic inorganics
78.40.Fy Semiconductors
81.15.Cd Deposition by sputtering

Enhanced luminescence in GaInNAsSb quantum wells through variation of the arsenic and antimony fluxes

Seth R. Bank, Homan B. Yuen, Hopil Bae, Mark A. Wistey, Akihiro Moto, and James S. Harris

Appl. Phys. Lett. 88, 241923 (2006); http://dx.doi.org/10.1063/1.2213176 (3 pages) | Cited 6 times

Online Publication Date: 16 June 2006

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Photoluminescence efficiency was enhanced in molecular-beam-epitaxial-grown 1.55-μm GaInNAsSb single quantum wells through modulation of the arsenic and antimony fluxes. The arsenic-to-antimony flux ratio was found to be a key consideration at reduced group-V fluxes in maintaining the beneficial effects of antimony while reducing the number of point defects, most likely arsenic antisites. Samples were also characterized by high-resolution x-ray diffraction, secondary ion mass spectrometry, and low-temperature photoluminescence. These findings offer a means to substantially reduce dilute-nitride laser threshold current densities.
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81.07.St Quantum wells
81.05.Ea III-V semiconductors
78.67.De Quantum wells
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
61.72.J- Point defects and defect clusters
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces

Dynamic strength of metals in shock deformation

Alison Kubota, David B. Reisman, and Wilhelm G. Wolfer

Appl. Phys. Lett. 88, 241924 (2006); http://dx.doi.org/10.1063/1.2210799 (2 pages) | Cited 5 times

Online Publication Date: 16 June 2006

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The Hugoniot and critical shear strength of shock-compressed metals can be obtained directly from molecular dynamics simulations without recourse to surface velocity profiles and their analyses. Results from simulations in aluminum containing an initial distribution of microscopic defects are shown to agree with experimental results.
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62.50.-p High-pressure effects in solids and liquids
81.40.Lm Deformation, plasticity, and creep
62.20.F- Deformation and plasticity
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Charge-carrier mobility in an organic semiconductor thin film measured by photoinduced electroluminescence

Richard A. Klenkler, Gu Xu, Hany Aziz, and Zoran D. Popovic

Appl. Phys. Lett. 88, 242101 (2006); http://dx.doi.org/10.1063/1.2212273 (3 pages) | Cited 7 times

Online Publication Date: 12 June 2006

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With existing methods it is difficult to measure the mobility of semiconducting thin films that have submicron thickness and submicrosecond charge-carrier transit time. To simplify these measurements we demonstrate a technique that is a combination of the time-of-flight and transient electroluminescence methods. The technique is fundamentally optical in that it decouples the carrier transient signal from the device charging circuit and hence removes the RC time constant constraint that limits existing methods. The technique was applied to measure electron mobility in a tris(8-hydroxyquinoline) aluminum (AlQ3) thin film. Results agree well with mobility values obtained using other methods.
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73.61.Ph Polymers; organic compounds
72.20.Fr Low-field transport and mobility; piezoresistance
78.66.Qn Polymers; organic compounds
78.60.Fi Electroluminescence

Rear emitter n-type passivated emitter, rear totally diffused silicon solar cell Structure

Jianhua Zhao and Aihua Wang

Appl. Phys. Lett. 88, 242102 (2006); http://dx.doi.org/10.1063/1.2213927 (3 pages) | Cited 5 times

Online Publication Date: 12 June 2006

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In a rear emitter n-type passivated emitter, rear totally diffused cell design, the boron diffused emitters are placed at the rear surface of n-type silicon substrates. This has significantly improved the cell efficiency up to 22.7%. A 170 μm thin float zone substrate and a 1.5 Ω cm modest substrate resistivity helped these cells to achieve highly efficient carrier transportation to the rear emitter. These 22 cm2 large cells are scribed off from the silicon wafer, representing efficiencies for applicable devices. These rear emitter cells also demonstrated stable performances both under one-sun illumination and after a few months storage in nitrogen.
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84.60.Jt Photoelectric conversion

Schottky barrier between 6H-SiC and graphite: Implications for metal/SiC contact formation

Th. Seyller, K. V. Emtsev, F. Speck, K.-Y. Gao, and L. Ley

Appl. Phys. Lett. 88, 242103 (2006); http://dx.doi.org/10.1063/1.2213928 (3 pages) | Cited 24 times

Online Publication Date: 12 June 2006

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Using photoelectron spectroscopy we have determined the Schottky barrier between 6H-SiC(0001) and graphite layers grown by solid state graphitization. For n-type 6H-SiC(0001) we find a low Schottky barrier of ϕbn = 0.3±0.1 eV. For p-type SiC(0001) a rather large value of ϕbp = 2.7±0.1 eV was determined. It is proposed that these extreme values are likely to have an impact on the electrical behavior of metal/SiC contacts subjected to postdeposition anneals.
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73.30.+y Surface double layers, Schottky barriers, and work functions
73.40.Ns Metal-nonmetal contacts
79.60.Jv Interfaces; heterostructures; nanostructures
61.72.Cc Kinetics of defect formation and annealing

Observation of inversion behaviors induced by polarization effects in GaN/AlxGa1−xN/GaN based metal-insulator-semiconductor structures

M. J. Wang, B. Shen, Y. Wang, S. Huang, Z. J. Yang, K. Xu, G. Y. Zhang, K. Hoshino, and Y. Arakawa

Appl. Phys. Lett. 88, 242104 (2006); http://dx.doi.org/10.1063/1.2213964 (3 pages)

Online Publication Date: 12 June 2006

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The influence of the polarization effects on the energy band structures and electrical properties of GaN-based heterostructures has been investigated by means of capacitance-voltage (C-V) measurements of GaN/Al0.22Ga0.78N/GaN based metal-insulator-semiconductor (MIS) structures at various frequencies and temperatures. C-V profile shows a distinctive hump at about −10 V in the MIS structures, indicating the formation of the inversion mode in the MIS structures. It is thought that the inversion is due to the hole accumulation in the hole well formed at the top GaN/Al0.22Ga0.78N heterointerface induced by the strong polarization-induced electric fields. The theoretical calculation of the band structure of GaN/AlxGa1−xN/GaN heterostructure confirms the physical model for the inversion behaviors.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.21.Fg Quantum wells
71.20.Nr Semiconductor compounds
73.63.Hs Quantum wells
73.20.At Surface states, band structure, electron density of states

Nonvolatile Cu/CuTCNQ/Al memory prepared by current controlled oxidation of a Cu anode in LiTCNQ saturated acetonitrile

R. Müller, J. Genoe, and P. Heremans

Appl. Phys. Lett. 88, 242105 (2006); http://dx.doi.org/10.1063/1.2213971 (3 pages) | Cited 8 times

Online Publication Date: 12 June 2006

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In this letter we propose a preparation method of the metal organic charge transfer complex Cu-tetracyanoquinodimethane (CuTCNQ) for use in nonvolatile organic memories. The method, consisting in current controlled oxidation of a Cu electrode in LiTCNQ saturated acetonitrile, is attractive because CuTCNQ growth is limited strictly to anodically polarized Cu metal, and because of material and solvent compatibilities with the requirements of the complementary metal-oxide-semiconductor (CMOS) copper back end-of-line process. Crossbar memories of this CuTCNQ exhibit superior performance compared to corresponding devices prepared by the standard method, which we attribute to a higher compactness of the CuTCNQ layer.
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85.30.-z Semiconductor devices
81.65.Mq Oxidation

Influence of defects on nanotube transistor performance

Neophytos Neophytou, Diego Kienle, Eric Polizzi, and M. P. Anantram

Appl. Phys. Lett. 88, 242106 (2006); http://dx.doi.org/10.1063/1.2211932 (3 pages) | Cited 14 times

Online Publication Date: 12 June 2006

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We study the effect of vacancies and charged impurities on the performance of carbon nanotube transistors by self-consistently solving the three-dimensional Poisson and Schrödinger equations. We find that a single vacancy or charged impurity can decrease the drive current by more than 25% from the ballistic current. The threshold voltage shift in the case of charged impurities can be as large as 40 mV.
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85.35.Kt Nanotube devices

Cross-plane lattice and electronic thermal conductivities of ErAs:InGaAs/InGaAlAs superlattices

Woochul Kim, Suzanne L. Singer, Arun Majumdar, Daryoosh Vashaee, Zhixi Bian, Ali Shakouri, Gehong Zeng, John E. Bowers, Joshua M. O. Zide, and Arthur C. Gossard

Appl. Phys. Lett. 88, 242107 (2006); http://dx.doi.org/10.1063/1.2207829 (3 pages) | Cited 35 times

Online Publication Date: 13 June 2006

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We studied the cross-plane lattice and electronic thermal conductivities of superlattices made of InGaAlAs and InGaAs films, with the latter containing embedded ErAs nanoparticles (denoted as ErAs:InGaAs). Measurements of total thermal conductivity at four doping levels and a theoretical analysis were used to estimate the cross-plane electronic thermal conductivity of the superlattices. The results show that the lattice and electronic thermal conductivities have marginal dependence on doping levels. This suggests that there is lateral conservation of electronic momentum during thermionic emission in the superlattices, which limits the fraction of available electrons for thermionic emission, thereby affecting the performance of thermoelectric devices.
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72.80.Ey III-V and II-VI semiconductors
72.20.Fr Low-field transport and mobility; piezoresistance
72.20.Pa Thermoelectric and thermomagnetic effects
73.50.Lw Thermoelectric effects
73.61.Ey III-V semiconductors

Liquid-phase-epitaxy-grown InAsxSb1−x/GaAs for room-temperature 8–12 μm infrared detectors

Changtao Peng, NuoFu Chen, Fubao Gao, Xingwang Zhang, Chenlong Chen, Jinliang Wu, and Yude Yu

Appl. Phys. Lett. 88, 242108 (2006); http://dx.doi.org/10.1063/1.2209709 (3 pages) | Cited 7 times

Online Publication Date: 13 June 2006

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Show Abstract
High-quality InAsxSb1−x (0<x ⩽ 0.3) films are grown on GaAs substrates by liquid phase epitaxy and electrical and optical properties of the films are investigated, revealing that the films exhibit Hall mobilities higher than 2×104 cm2 V−1 s−1 and cutoff wavelengths longer than 10 μm at room temperature (RT). Photoconductors are fabricated from the films, and notable photoresponses beyond 8 μm are observed at RT. In particular, for an InAs0.3Sb0.7 film, a photoresponse of up to 13 μm with a maximum responsivity of 0.26 V/W is obtained at RT. Hence, the InAsxSb1−x films demonstrate attractive properties suitable for room-temperature, long-wavelength infrared detectors.
Show PACS
07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
85.60.Gz Photodetectors (including infrared and CCD detectors)
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
72.40.+w Photoconduction and photovoltaic effects
68.55.-a Thin film structure and morphology
78.66.Fd III-V semiconductors
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