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12 Jun 2006

Volume 88, Issue 24, Articles (24xxxx)

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Appl. Phys. Lett. 88, 243101 (2006); http://dx.doi.org/10.1063/1.2211007 (3 pages)

G. H. Du, F. Xu, Z. Y. Yuan, and G. Van Tendeloo
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Thermal effects on domain orientation of tetragonal piezoelectrics studied by in situ x-ray diffraction

Wonyoung Chang, Alexander H. King, and Keith J. Bowman

Appl. Phys. Lett. 88, 242901 (2006); http://dx.doi.org/10.1063/1.2213952 (3 pages) | Cited 13 times

Online Publication Date: 12 June 2006

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Thermal effects on domain orientation in tetragonal lead zirconate titanate (PZT) and lead titanate (PT) have been investigated by using in situ x-ray diffraction with an area detector. In the case of a soft PZT, it is found that the texture parameter called multiples of a random distribution (MRD) initially increases with temperature up to approximately 100 °C and then falls to unity at temperatures approaching the Curie temperature, whereas the MRD of hard PZT and PT initially undergoes a smaller increase or no change. The relationship between the mechanical strain energy and domain wall mobility with temperature is discussed.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.80.Dj Domain structure; hysteresis
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
77.65.-j Piezoelectricity and electromechanical effects

Converse magnetoelectric effect in laminated composites of PMN–PT single crystal and Terfenol-D alloy

Yanmin Jia, Siu Wing Or, Helen Lai Wa Chan, Xiangyong Zhao, and Haosu Luo

Appl. Phys. Lett. 88, 242902 (2006); http://dx.doi.org/10.1063/1.2212054 (3 pages) | Cited 45 times

Online Publication Date: 14 June 2006

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We have found experimentally and theoretically that laminated composites comprising one layer of length-magnetized Tb0.3Dy0.7Fe1.92 (Terfenol-D) magnetostrictive alloy sandwiched between two layers of thickness-polarized, electro-parallel-connected 0.7Pb(Mg1/3Nb2/3)O3–0.3PbTiO3 (PMN–PT) piezoelectric single crystal have a large converse magnetoelectric effect characterized by a large magnetic induction in response to an applied ac voltage. The reported converse magnetoelectric effect originates from the product of the converse piezoelectric effect in the PMN–PT layers and the converse magnetostrictive effect in the Terfenol-D layer. Large converse magnetoelectric coefficient in excess of 105 mG/V is obtained in the composites at a low magnetic bias field of 170 Oe. The measured magnetic induction has an excellent linear relationship to the applied ac voltage with amplitude varying from 50 to 160 V. These made the composites to be a promising material for direct realization of core-free magnetic flux control devices.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
75.50.Bb Fe and its alloys
75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)
75.80.+q Magnetomechanical effects, magnetostriction
77.65.-j Piezoelectricity and electromechanical effects

Positive and negative magnetocapacitance in magnetic nanoparticle systems

G. Lawes, R. Tackett, B. Adhikary, R. Naik, O. Masala, and R. Seshadri

Appl. Phys. Lett. 88, 242903 (2006); http://dx.doi.org/10.1063/1.2213194 (3 pages) | Cited 8 times

Online Publication Date: 14 June 2006

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The dielectric properties of MnFe2O4 and γ-Fe2O3 magnetic nanoparticles embedded in insulating matrices were investigated. The samples showed frequency dependent dielectric anomalies coincident with the magnetic blocking temperature and significant magnetocapacitance above this blocking temperature, as large as 0.4% at H = 10 kOe. For both samples the magnetic field induced change in dielectric constant at high temperatures was proportional to the square of the sample magnetization. These measurements suggest that the dielectric properties of magnetic nanoparticles are closely related to the disposition of magnetic moments in the system. This magnetodielectric coupling is believed to arise from extrinsic effects, which are discussed in light of recent work relating magnetoresistive and magnetocapacitive behaviors.
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75.50.Tt Fine-particle systems; nanocrystalline materials
75.80.+q Magnetomechanical effects, magnetostriction
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
75.30.Cr Saturation moments and magnetic susceptibilities

Synthesis and ferroelectric properties of epitaxial BiFeO3 thin films grown by sputtering

R. R. Das, D. M. Kim, S. H. Baek, C. B. Eom, F. Zavaliche, S. Y. Yang, R. Ramesh, Y. B. Chen, X. Q. Pan, X. Ke, M. S. Rzchowski, and S. K. Streiffer

Appl. Phys. Lett. 88, 242904 (2006); http://dx.doi.org/10.1063/1.2213347 (3 pages) | Cited 89 times

Online Publication Date: 15 June 2006

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We have grown epitaxial BiFeO3 thin films with smooth surfaces on (001), (101), and (111) SrTiO3 substrates using sputtering. Four-circle x-ray diffraction and cross-sectional transmission electron microscopy show that the BiFeO3 thin films have rhombohedral symmetry although small monoclinic distortions have not been ruled out. Stripe ferroelectric domains oriented perpendicular to the substrate miscut direction and free of impurity phase are observed in BiFeO3 on high miscut (4°) (001) SrTiO3, which attributes to a relatively high value of remanent polarization ( ∼ 71 μC/cm2). Films grown on low miscut (0.8°) SrTiO3 have a small amount of impure phase α-Fe2O3 which contributes to lower the polarization values ( ∼ 63 μC/cm2). The BiFeO3 films grown on (101) and (111) SrTiO3 exhibited remanent polarizations of 86 and 98 μC/cm2, respectively.
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77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
77.55.-g Dielectric thin films
77.80.Dj Domain structure; hysteresis
77.22.Ej Polarization and depolarization
81.15.Cd Deposition by sputtering

Temperature-dependent degradation mechanisms of channel mobility in ZrO2-gated n-channel metal-oxide-semiconductor field-effect transistors

Ming-Tsong Wang, Bonds Yi-Yi Cheng, and Joseph Ya-min Lee

Appl. Phys. Lett. 88, 242905 (2006); http://dx.doi.org/10.1063/1.2211307 (3 pages) | Cited 5 times

Online Publication Date: 15 June 2006

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The mobility degradation mechanism of n-channel metal-oxide-semiconductor field-effect transistors (n-MOSFETs) with ZrO2 gate dielectric was studied. The temperature dependence of device characteristics was studied in the temperature range from 300 to 420 K. The electron mobility limited by surface roughness is proportional to Eeff−0.68 in the fields of 0.5<Eeff<2 MV/cm at 300 K. The electron mobility limited by phonon scattering is proportional to T−3.0 at the effective normal field Eeff of 0.8 MV/cm between 300 and 420 K. Soft optical phonon scattering was used to explain the extra source of phonon scattering in ZrO2-gated n-MOSFETs.
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85.30.Tv Field effect devices

Magnetic-field-dependent dielectric constant in La2/3Ca1/3MnO3

J. Rivas, J. Mira, B. Rivas-Murias, A. Fondado, J. Dec, W. Kleemann, and M. A. Señarís-Rodríguez

Appl. Phys. Lett. 88, 242906 (2006); http://dx.doi.org/10.1063/1.2213513 (3 pages) | Cited 20 times

Online Publication Date: 15 June 2006

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We report a rather high dependence of the dielectric permittivity on the magnetic field in La2/3Ca1/3MnO3. The variation is maximum at around 270 K, little above the Curie temperature TC, and it reaches a 35% under only 0.5 T. We attribute this phenomenon to the space-charge or interfacial polarization produced between the insulator and the metallic regions segregated intrinsically in the material above TC.
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75.80.+q Magnetomechanical effects, magnetostriction
77.22.Ch Permittivity (dielectric function)
77.22.Jp Dielectric breakdown and space-charge effects
77.22.Ej Polarization and depolarization
75.47.Gk Colossal magnetoresistance
75.47.Lx Magnetic oxides

Characterizing xBa(Mg1/3Ta2/3)O3+(1−x)Ba(Mg1/3Nb2/3)O3 microwave ceramics using extended x-ray absorption fine structure method

P.-J. Chang, C.-T. Chia, I.-N. Lin, J.-F. Lee, C. M. Lin, and K. T. Wu

Appl. Phys. Lett. 88, 242907 (2006); http://dx.doi.org/10.1063/1.2213514 (3 pages) | Cited 3 times

Online Publication Date: 15 June 2006

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The structures of TaO6 and NbO6 oxygen octahedra in xBa(Mg1/3Ta2/3)O3+(1−x)Ba(Mg1/3Nb2/3)O3 perovskite ceramics with x = 0, 0.25, 0.50, 0.75, and 1.0 were investigated by the extended x-ray absorption fine structure method. The decline in the microwave dielectric constant as x increases is caused mainly by the decrease of the mean volume of the oxygen octahedra, regardless of the 1:2 ordered structure and the distortion of the oxygen octahedron. The low Qf values of the TaO6 and NbO6 mixed samples are caused by not only the degrading of the 1:2 ordered structure but also the distortion of oxygen octahedral cages.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.22.Ch Permittivity (dielectric function)
78.70.Dm X-ray absorption spectra
84.40.-x Radiowave and microwave (including millimeter wave) technology

Irreversible extinction of ferroelectric polarization in P(VDF-TrFE) thin films upon melting and recrystallization

Youn Jung Park, Seok Ju Kang, Cheolmin Park, Kap Jin Kim, Han Sup Lee, Moon Sook Lee, U-In Chung, and In Jun Park

Appl. Phys. Lett. 88, 242908 (2006); http://dx.doi.org/10.1063/1.2207831 (3 pages) | Cited 25 times

Online Publication Date: 16 June 2006

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We observed the irreversible extinction of ferroelectric polarization in spun coated poly(vinylidene fluoride-co-trifluoroethylene) thin films upon melting and recrystallization. We investigate the alteration of the ferroelectric properties correlated with the preferred polymer crystal orientation with respect to the electrodes using grazing incident scattering, spectroscopy, and electron microscopes. Heat treatment above melting point gave rise to the significant reduction of the ferroelectric performance mainly caused by the modification of molecular orientation of polymer crystals whose c and b axes are perpendicular and parallel to the electrode surface, respectively, leading to almost zero effective electric field.
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77.84.Jd Polymers; organic compounds
77.55.-g Dielectric thin films
77.80.-e Ferroelectricity and antiferroelectricity
77.22.Ej Polarization and depolarization
64.70.D- Solid-liquid transitions
81.40.Gh Other heat and thermomechanical treatments

Influence of Mn and Nb dopants on electric properties of chemical-solution-deposited BiFeO3 films

Chin-Feng Chung, Jen-Po Lin, and Jenn-Ming Wu

Appl. Phys. Lett. 88, 242909 (2006); http://dx.doi.org/10.1063/1.2214138 (3 pages) | Cited 77 times

Online Publication Date: 16 June 2006

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Polycrystalline Mn-doped, Nb-doped, and pure BiFeO3 (BFO) films were fabricated via chemical solution deposition (CSD) method. Influence of Mn and Nb dopants on electric properties of BFO films were studied. The current density versus electric field (J-E) characteristics indicated that conduction mechanisms of Mn-doped, Nb-doped, and pure BFO films annealed at 500 °C were Ohmic conduction, grain boundary limited conduction, and space charge limited conduction, respectively. The effect of Mn and Nb dopants on electric properties of BFO films was interpreted by defect chemistry and chemical reaction in the CSD process. The Nb dopant is effective in improving electrical properties of CSD-derived BFO films, while Mn is harmful in this respect.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.55.-g Dielectric thin films
77.80.-e Ferroelectricity and antiferroelectricity
77.22.Jp Dielectric breakdown and space-charge effects
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
61.72.up Other materials
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