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12 Jun 2006

Volume 88, Issue 24, Articles (24xxxx)

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Appl. Phys. Lett. 88, 243101 (2006); http://dx.doi.org/10.1063/1.2211007 (3 pages)

G. H. Du, F. Xu, Z. Y. Yuan, and G. Van Tendeloo
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Charge-carrier mobility in an organic semiconductor thin film measured by photoinduced electroluminescence

Richard A. Klenkler, Gu Xu, Hany Aziz, and Zoran D. Popovic

Appl. Phys. Lett. 88, 242101 (2006); http://dx.doi.org/10.1063/1.2212273 (3 pages) | Cited 7 times

Online Publication Date: 12 June 2006

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With existing methods it is difficult to measure the mobility of semiconducting thin films that have submicron thickness and submicrosecond charge-carrier transit time. To simplify these measurements we demonstrate a technique that is a combination of the time-of-flight and transient electroluminescence methods. The technique is fundamentally optical in that it decouples the carrier transient signal from the device charging circuit and hence removes the RC time constant constraint that limits existing methods. The technique was applied to measure electron mobility in a tris(8-hydroxyquinoline) aluminum (AlQ3) thin film. Results agree well with mobility values obtained using other methods.
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73.61.Ph Polymers; organic compounds
72.20.Fr Low-field transport and mobility; piezoresistance
78.66.Qn Polymers; organic compounds
78.60.Fi Electroluminescence

Rear emitter n-type passivated emitter, rear totally diffused silicon solar cell Structure

Jianhua Zhao and Aihua Wang

Appl. Phys. Lett. 88, 242102 (2006); http://dx.doi.org/10.1063/1.2213927 (3 pages) | Cited 5 times

Online Publication Date: 12 June 2006

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In a rear emitter n-type passivated emitter, rear totally diffused cell design, the boron diffused emitters are placed at the rear surface of n-type silicon substrates. This has significantly improved the cell efficiency up to 22.7%. A 170 μm thin float zone substrate and a 1.5 Ω cm modest substrate resistivity helped these cells to achieve highly efficient carrier transportation to the rear emitter. These 22 cm2 large cells are scribed off from the silicon wafer, representing efficiencies for applicable devices. These rear emitter cells also demonstrated stable performances both under one-sun illumination and after a few months storage in nitrogen.
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84.60.Jt Photoelectric conversion

Schottky barrier between 6H-SiC and graphite: Implications for metal/SiC contact formation

Th. Seyller, K. V. Emtsev, F. Speck, K.-Y. Gao, and L. Ley

Appl. Phys. Lett. 88, 242103 (2006); http://dx.doi.org/10.1063/1.2213928 (3 pages) | Cited 24 times

Online Publication Date: 12 June 2006

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Using photoelectron spectroscopy we have determined the Schottky barrier between 6H-SiC(0001) and graphite layers grown by solid state graphitization. For n-type 6H-SiC(0001) we find a low Schottky barrier of ϕbn = 0.3±0.1 eV. For p-type SiC(0001) a rather large value of ϕbp = 2.7±0.1 eV was determined. It is proposed that these extreme values are likely to have an impact on the electrical behavior of metal/SiC contacts subjected to postdeposition anneals.
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73.30.+y Surface double layers, Schottky barriers, and work functions
73.40.Ns Metal-nonmetal contacts
79.60.Jv Interfaces; heterostructures; nanostructures
61.72.Cc Kinetics of defect formation and annealing

Observation of inversion behaviors induced by polarization effects in GaN/AlxGa1−xN/GaN based metal-insulator-semiconductor structures

M. J. Wang, B. Shen, Y. Wang, S. Huang, Z. J. Yang, K. Xu, G. Y. Zhang, K. Hoshino, and Y. Arakawa

Appl. Phys. Lett. 88, 242104 (2006); http://dx.doi.org/10.1063/1.2213964 (3 pages)

Online Publication Date: 12 June 2006

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The influence of the polarization effects on the energy band structures and electrical properties of GaN-based heterostructures has been investigated by means of capacitance-voltage (C-V) measurements of GaN/Al0.22Ga0.78N/GaN based metal-insulator-semiconductor (MIS) structures at various frequencies and temperatures. C-V profile shows a distinctive hump at about −10 V in the MIS structures, indicating the formation of the inversion mode in the MIS structures. It is thought that the inversion is due to the hole accumulation in the hole well formed at the top GaN/Al0.22Ga0.78N heterointerface induced by the strong polarization-induced electric fields. The theoretical calculation of the band structure of GaN/AlxGa1−xN/GaN heterostructure confirms the physical model for the inversion behaviors.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.21.Fg Quantum wells
71.20.Nr Semiconductor compounds
73.63.Hs Quantum wells
73.20.At Surface states, band structure, electron density of states

Nonvolatile Cu/CuTCNQ/Al memory prepared by current controlled oxidation of a Cu anode in LiTCNQ saturated acetonitrile

R. Müller, J. Genoe, and P. Heremans

Appl. Phys. Lett. 88, 242105 (2006); http://dx.doi.org/10.1063/1.2213971 (3 pages) | Cited 8 times

Online Publication Date: 12 June 2006

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In this letter we propose a preparation method of the metal organic charge transfer complex Cu-tetracyanoquinodimethane (CuTCNQ) for use in nonvolatile organic memories. The method, consisting in current controlled oxidation of a Cu electrode in LiTCNQ saturated acetonitrile, is attractive because CuTCNQ growth is limited strictly to anodically polarized Cu metal, and because of material and solvent compatibilities with the requirements of the complementary metal-oxide-semiconductor (CMOS) copper back end-of-line process. Crossbar memories of this CuTCNQ exhibit superior performance compared to corresponding devices prepared by the standard method, which we attribute to a higher compactness of the CuTCNQ layer.
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85.30.-z Semiconductor devices
81.65.Mq Oxidation

Influence of defects on nanotube transistor performance

Neophytos Neophytou, Diego Kienle, Eric Polizzi, and M. P. Anantram

Appl. Phys. Lett. 88, 242106 (2006); http://dx.doi.org/10.1063/1.2211932 (3 pages) | Cited 14 times

Online Publication Date: 12 June 2006

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We study the effect of vacancies and charged impurities on the performance of carbon nanotube transistors by self-consistently solving the three-dimensional Poisson and Schrödinger equations. We find that a single vacancy or charged impurity can decrease the drive current by more than 25% from the ballistic current. The threshold voltage shift in the case of charged impurities can be as large as 40 mV.
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85.35.Kt Nanotube devices

Cross-plane lattice and electronic thermal conductivities of ErAs:InGaAs/InGaAlAs superlattices

Woochul Kim, Suzanne L. Singer, Arun Majumdar, Daryoosh Vashaee, Zhixi Bian, Ali Shakouri, Gehong Zeng, John E. Bowers, Joshua M. O. Zide, and Arthur C. Gossard

Appl. Phys. Lett. 88, 242107 (2006); http://dx.doi.org/10.1063/1.2207829 (3 pages) | Cited 35 times

Online Publication Date: 13 June 2006

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We studied the cross-plane lattice and electronic thermal conductivities of superlattices made of InGaAlAs and InGaAs films, with the latter containing embedded ErAs nanoparticles (denoted as ErAs:InGaAs). Measurements of total thermal conductivity at four doping levels and a theoretical analysis were used to estimate the cross-plane electronic thermal conductivity of the superlattices. The results show that the lattice and electronic thermal conductivities have marginal dependence on doping levels. This suggests that there is lateral conservation of electronic momentum during thermionic emission in the superlattices, which limits the fraction of available electrons for thermionic emission, thereby affecting the performance of thermoelectric devices.
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72.80.Ey III-V and II-VI semiconductors
72.20.Fr Low-field transport and mobility; piezoresistance
72.20.Pa Thermoelectric and thermomagnetic effects
73.50.Lw Thermoelectric effects
73.61.Ey III-V semiconductors

Liquid-phase-epitaxy-grown InAsxSb1−x/GaAs for room-temperature 8–12 μm infrared detectors

Changtao Peng, NuoFu Chen, Fubao Gao, Xingwang Zhang, Chenlong Chen, Jinliang Wu, and Yude Yu

Appl. Phys. Lett. 88, 242108 (2006); http://dx.doi.org/10.1063/1.2209709 (3 pages) | Cited 7 times

Online Publication Date: 13 June 2006

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High-quality InAsxSb1−x (0<x ⩽ 0.3) films are grown on GaAs substrates by liquid phase epitaxy and electrical and optical properties of the films are investigated, revealing that the films exhibit Hall mobilities higher than 2×104 cm2 V−1 s−1 and cutoff wavelengths longer than 10 μm at room temperature (RT). Photoconductors are fabricated from the films, and notable photoresponses beyond 8 μm are observed at RT. In particular, for an InAs0.3Sb0.7 film, a photoresponse of up to 13 μm with a maximum responsivity of 0.26 V/W is obtained at RT. Hence, the InAsxSb1−x films demonstrate attractive properties suitable for room-temperature, long-wavelength infrared detectors.
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07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
85.60.Gz Photodetectors (including infrared and CCD detectors)
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
72.40.+w Photoconduction and photovoltaic effects
68.55.-a Thin film structure and morphology
78.66.Fd III-V semiconductors

Charge injection in polymer light-emitting diodes based on poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(1,4-phenylene)]

A. Yusoff, Z. Hassan, and H. Abu Hassan

Appl. Phys. Lett. 88, 242109 (2006); http://dx.doi.org/10.1063/1.2212065 (3 pages)

Online Publication Date: 14 June 2006

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In this letter, the electrical properties of polymer light-emitting diodes based on polyfluorene derivative, named poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(1,4-phenylene)] (F8P), were studied. Indium tin oxide (ITO)/polymer/metal [magnesium (Mg) and calcium (Ca)] structures were used to study the effect of the barrier height on the charge injection at the polymer/metal (anode) interfaces. For ITO/F8P/Mg devices, strong temperature influence on the dc conductivity was observed in the forward direction, and afterwards, in the reverse direction, the conductivity was totally temperature independent. On the other hand, ITO/F8P/Ca devices presented temperature-dependent conductivities for both polarities.
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85.60.Jb Light-emitting devices

Electrical characterization of defects introduced during electron beam deposition of Pd Schottky contacts on n-type Ge

F. D. Auret, W. E. Meyer, S. Coelho, and M. Hayes

Appl. Phys. Lett. 88, 242110 (2006); http://dx.doi.org/10.1063/1.2213203 (3 pages) | Cited 13 times

Online Publication Date: 14 June 2006

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We have investigated by deep level transient spectroscopy the hole and electron trap defects introduced in n-type Ge during electron beam deposition (EBD) of Pd Schottky contacts. We have also compared the properties of these defects with those introduced in the same material during high-energy electron irradiation. Our results show that EBD introduces several electron and hole traps at and near the surface of Ge. The main defect introduced during EBD has electronic properties similar to those of the V–Sb complex, or E center, introduced during high-energy particle irradiation of Ge. This defect has two levels E0.38 and H0.30 that correspond to its (−−,−) and (−,0) charge states.
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71.55.Cn Elemental semiconductors
73.30.+y Surface double layers, Schottky barriers, and work functions
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
61.80.Fe Electron and positron radiation effects
73.40.Ns Metal-nonmetal contacts

Laser-induced shock wave stimulated doping of CdTe crystals

V. A. Gnatyuk, T. Aoki, and Y. Hatanaka

Appl. Phys. Lett. 88, 242111 (2006); http://dx.doi.org/10.1063/1.2213511 (3 pages) | Cited 7 times

Online Publication Date: 14 June 2006

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Action of a laser-induced plane shock wave has been considered as the mechanism of doping of CdTe surface region with In. CdTe crystals coated with a relatively thick In film were subjected to irradiation with KrF excimer laser pulses. The In film was not completely evaporated under irradiation and it served further as an electrode in the fabrication of nuclear radiation detectors. Dopant atoms, implicated by laser-induced stress and shock waves, penetrated into CdTe. An In-enriched region was formed and a built-in p-n junction arose at the depth where a stress wave was converted to a shock wave.
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61.72.uj III-V and II-VI semiconductors
42.62.-b Laser applications
62.50.-p High-pressure effects in solids and liquids
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
61.82.Fk Semiconductors
79.20.Ds Laser-beam impact phenomena

High temperature nitrogen annealing induced interstitial oxygen precipitation in silicon epitaxial layer on heavily arsenic-doped silicon wafer

Q. Wang, Manmohan Daggubati, Rong Yu, and Xiao Feng Zhang

Appl. Phys. Lett. 88, 242112 (2006); http://dx.doi.org/10.1063/1.2213516 (3 pages) | Cited 1 time

Online Publication Date: 14 June 2006

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High temperature nitrogen annealing induced interstitial oxygen (Oi) precipitation has been investigated in silicon epitaxial layers (epilayers) grown on heavily arsenic-doped Czochralski silicon wafers. Both transmission electron microscopy and secondary ion mass spectrometry data indicate a strong Oi precipitation and/or segregation in the subsurface of epilayers annealed in N2 at 1200 °C. The Oi precipitates have needlelike morphology with {111} habit planes along ⟨110⟩ directions. This precipitation is facilitated by thermal nitridation-produced vacancies or nitrogen-vacancy complexes and is sensitive to annealing conditions. Annealing in Ar or in N2 at temperature <1125 °C results in no epilayer subsurface Oi precipitation.
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61.72.Cc Kinetics of defect formation and annealing
64.75.-g Phase equilibria
81.30.Mh Solid-phase precipitation
68.37.Lp Transmission electron microscopy (TEM)
82.80.Ms Mass spectrometry (including SIMS, multiphoton ionization and resonance ionization mass spectrometry, MALDI)
81.65.Lp Surface hardening: nitridation, carburization, carbonitridation

Organic thin-film transistors with high mobilities and low operating voltages based on 5,5′-bis-biphenyl-dithieno[3,2-b:2′,3′-d]thiophene semiconductor and polymer gate dielectric

Yanming Sun, Yunqi Liu, Yongqiang Ma, Chongan Di, Ying Wang, Weiping Wu, Gui Yu, Wenping Hu, and Daoben Zhu

Appl. Phys. Lett. 88, 242113 (2006); http://dx.doi.org/10.1063/1.2209213 (3 pages) | Cited 22 times

Online Publication Date: 15 June 2006

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Employing 5,5′-bis-biphenyl-dithieno[3,2-b:2′,3′-d]thiophene (BPDTT) as semiconducting layer and poly(vinyl alcohol) (PVA) as gate dielectric layer, we have fabricated organic thin-film transistors. These devices exhibit excellent field-effect performances with a high mobility of up to 0.6 cm2/V s and a very low operating voltage (<1 V) at room temperature. The single crystal of BPDTT was grown and analyzed. The high performances are mainly attributed to the close herringbone packing of BPDTT molecules and the high homogeneity between PVA and BPDTT molecules.
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85.30.Tv Field effect devices

Large image potential effects in Si/SrTiO3 and Si/HfO2 two-dimensional quantum well structures

T. A. S. Pereira, J. A. K. Freire, V. N. Freire, G. A. Farias, L. M. R. Scolfaro, J. R. Leite, and E. F. da Silva

Appl. Phys. Lett. 88, 242114 (2006); http://dx.doi.org/10.1063/1.2212279 (3 pages) | Cited 3 times

Online Publication Date: 15 June 2006

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Charge image effects on the confinement properties of Si/SrTiO3 and Si/HfO2 two-dimensional quantum wells are studied. The combination of strong dielectric mismatch and band offset of the layers gives rise to structured confinement potentials, which can trap carriers close to the interfaces in Si/SrTiO3 but not in Si/HfO2 two-dimensional quantum wells. The charge image blueshifts strongly (a few hundred meV) the carrier recombination energy, comparable to the shift related to the well width shortening due to actual graded interfaces.
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78.67.De Quantum wells
73.21.Fg Quantum wells
73.20.At Surface states, band structure, electron density of states
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
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