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26 Jun 2006

Volume 88, Issue 26, Articles (26xxxx)

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Appl. Phys. Lett. 88, 261107 (2006); http://dx.doi.org/10.1063/1.2213912 (3 pages)

Stanley S. Hong, Berthold K. P. Horn, Dennis M. Freeman, and Michael S. Mermelstein
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Pixel-encapsulated flexible displays with a multifunctional elastomer substrate for self-aligning liquid crystals

Yeun-Tae Kim, Jong-Ho Hong, Tae-Young Yoon, and Sin-Doo Lee

Appl. Phys. Lett. 88, 263501 (2006); http://dx.doi.org/10.1063/1.2215597 (3 pages) | Cited 21 times

Online Publication Date: 26 June 2006

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We report on a pixel-encapsulated flexible liquid crystal display (LCD) based on an elastomer substrate of self-aligning LC molecules. The elastomer substrate, fabricated by a replica molding technique, has pixel-encapsulating walls that serve as spacers and allow for mechanical stability and reproducibility against bending deformations. Our pixel-encapsulated LCD provides great flexibility, durability, and excellent electro-optic performances in a highly bent environment.
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42.79.Kr Display devices, liquid-crystal devices
42.70.Df Liquid crystals
85.60.Pg Display systems
61.30.Vx Polymer liquid crystals

Temperature-dependent dark current measurements in GaAsN heterojunction diodes

J. M. Luther, S. W. Johnston, S. R. Kurtz, R. K. Ahrenkiel, and R. T. Collins

Appl. Phys. Lett. 88, 263502 (2006); http://dx.doi.org/10.1063/1.2215604 (3 pages) | Cited 2 times

Online Publication Date: 26 June 2006

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Temperature- and bias-dependent current measurements were performed on n+-GaAs/p-GaAs1−xNx heterojunction diodes. The samples studied are in the dilute regime and contain less than 1.7% nitrogen with respect to arsenic. Current-voltage, thermally stimulated current, and current transient (after voltage change) measurements provide unique insight into the defect participation in carrier transport within the depletion region. We will present the data obtained from these measurements, which show an activation energy of 0.21 eV and may be related to a key defect measured by capacitance transients in the literature.
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85.30.Kk Junction diodes

High-performance blue electroluminescence devices based on distyrylbenzene derivatives

Yu Duan, Yi Zhao, Ping Chen, Jiang Li, Shiyong Liu, Feng He, and Yuguang Ma

Appl. Phys. Lett. 88, 263503 (2006); http://dx.doi.org/10.1063/1.2215607 (3 pages) | Cited 18 times

Online Publication Date: 26 June 2006

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Amorphous molecular, distyrylbenzene derivative 2,5,2′,5′,2″,5″-hexastyryl-[1,1′;4′,1″] terphenyl (HSTP) is sandwiched between NPB and Alq3 as blue light-emitting material in typical multilayer organic light-emitting devices, where NPB and Alq3 are 1,4-bis(1-naphylphenylamino)biphenyl and tris(8-hydroxyquinoline)aluminum, respectively. Formation of exciplex at the interface of NPB and HSTP layer is verified by study on photoluminescence and electroluminescence (EL) spectra. The performance of EL can be greatly improved by optimizations of devices; a pure blue device with Internationale de l’Eclairage coordination (0.16, 0.13), maximum brightness of 15 830 cd/m2, and current efficiency of 4.88 cd/A is obtained.
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85.60.Jb Light-emitting devices

Double-gated field emitter array with carbon nanotubes grown by chemical vapor deposition

Young Chul Choi, Kwang Seok Jeong, In Taek Han, Ha Jin Kim, Yong Wan Jin, Jong Min Kim, Byong Gon Lee, Jong Hwan Park, and Deok Hyoen Choe

Appl. Phys. Lett. 88, 263504 (2006); http://dx.doi.org/10.1063/1.2217711 (3 pages) | Cited 11 times

Online Publication Date: 26 June 2006

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We fabricated 4.75 in. diagonal field emitter arrays with a double-gated structure in which the carbon nanotubes were synthesized by chemical vapor deposition using CO and H2 as feed gases. The nanotubes grown directly inside gate holes were used as an emitter. The diameter of the gate hole opening was as small as 4 μm, accompanied with a large number of gate holes in a pixel. The electron beam spreading was minimized by employing a focus electrode. It was found that neither anode voltage nor focus electrode voltage had a strong influence on the anode current. The pixel-to-pixel uniformity of the fabricated structure was measured to be about 91%. Considering the limitation of the structure that has only a vertical resistive layer, it can be said that the fabricated field emitter shows quite a good uniformity.
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85.45.Db Field emitters and arrays, cold electron emitters
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
85.35.Kt Nanotube devices

Highly directional acoustic wave radiation based on asymmetrical two-dimensional phononic crystal resonant cavity

Manzhu Ke, Zhengyou Liu, Pei Pang, Wengang Wang, Zhigang Cheng, Jing Shi, Xingzhong Zhao, and Weijia Wen

Appl. Phys. Lett. 88, 263505 (2006); http://dx.doi.org/10.1063/1.2217923 (3 pages) | Cited 12 times

Online Publication Date: 26 June 2006

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The radiation properties of an asymmetrical two-dimensional phononic crystal resonant cavity with a point source inside are investigated experimentally. The resonant cavity is formed by two separated phononic crystals of different thickness, both of which consist of the same square array of steel rods in water. We observe highly directional acoustic wave radiation when a point acoustic source is put inside the cavity. The radiation field has a half-power beam width less than 6°. This design may serve as a highly directional acoustic source in applications.
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62.65.+k Acoustical properties of solids
63.20.-e Phonons in crystal lattices

Experimental investigation of transport properties in chalcogenide materials through 1/f noise measurements

P. Fantini, A. Pirovano, D. Ventrice, and A. Redaelli

Appl. Phys. Lett. 88, 263506 (2006); http://dx.doi.org/10.1063/1.2215621 (3 pages) | Cited 10 times

Online Publication Date: 26 June 2006

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Low-frequency noise spectral density in chalcogenide-based phase-change memory cells has been measured, discussing the role of trapping centers and static disorder as responsible for a noise level in the vitreous insulating state two orders of magnitude higher than in the ordered conducting polycrystalline one. The magnitude of 1/f noise has been also studied as a function of the applied voltage and exploited to experimentally investigate the transport mechanisms in chalcogenide alloys, showing that the exponential increase of noise spectral density with voltage can be quantitatively explained by considering an avalanchelike multiplication phenomenon.
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73.61.Jc Amorphous semiconductors; glasses
72.70.+m Noise processes and phenomena
84.30.Sk Pulse and digital circuits

Material structure and metastability of hydrogenated nanocrystalline silicon solar cells

Guozhen Yue, Baojie Yan, Gautam Ganguly, Jeffrey Yang, Subhendu Guha, and Charles W. Teplin

Appl. Phys. Lett. 88, 263507 (2006); http://dx.doi.org/10.1063/1.2216022 (3 pages) | Cited 16 times

Online Publication Date: 26 June 2006

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We find that the volume fraction of amorphous component in hydrogenated nanocrystalline silicon intrinsic layers is not necessarily the determining factor for the light-induced metastability ofn-i-p solar cells. Small grains and/or intermediate range order may play an important role in improving the stability. The distribution of nanocrystallites along the growth direction is also important. Based on the findings, we have optimized the hydrogen dilution profiling for controlling the structural evolution and have reduced the light-induced degradation of solar cells. As a result, we have achieved initial and stable active-area efficiencies of 14.1% and 13.2%, respectively, using ana-Si:H/nc-Si:H/nc-Si:H triple-junction structure.
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84.60.Jt Photoelectric conversion
85.30.-z Semiconductor devices
61.72.S- Impurities in crystals
61.72.uf Ge and Si
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
61.46.Hk Nanocrystals

Electromechanically driven and sensed parametric resonance in silicon microcantilevers

Michael V. Requa and Kimberly L. Turner

Appl. Phys. Lett. 88, 263508 (2006); http://dx.doi.org/10.1063/1.2216033 (3 pages) | Cited 11 times

Online Publication Date: 26 June 2006

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We report on the design and experimental measurements of an integrated driving and sensing technique in parametrically excited silicon microcantilevers. The design involves actuation with axial Lorentz forces and sensing with magnetomotive forces, both of which are enabled by a chip-scale permanent magnet. In this demonstration the micromechanical parametric resonance is measured electrically. This system has applications to resonant parametric sensing.
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85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices
07.10.Cm Micromechanical devices and systems
07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing

Improved ultraviolet emission from reduced defect gallium nitride homojunctions grown on step-free 4H-SiC mesas

Joshua D. Caldwell, Michael A. Mastro, Karl D. Hobart, Orest J. Glembocki, Charles R. Eddy, Nabil D. Bassim, R. T. Holm, Richard L. Henry, Mark E. Twigg, Fritz Kub, Phillip G. Neudeck, Andrew J. Trunek, and J. Anthony Powell

Appl. Phys. Lett. 88, 263509 (2006); http://dx.doi.org/10.1063/1.2218045 (3 pages) | Cited 9 times

Online Publication Date: 27 June 2006

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We previously reported 100-fold reductions in III-N heterofilm threading dislocation density achieved via growth on top of (0001) 4H-SiC mesas completely free of atomic scale steps. This letter compares the electroluminescent (EL) output of GaN pn junctions grown on top of 4H-SiC mesas with and without such steps. An average of 49% enhancement of the ultraviolet luminescence (380 nm) was observed in step-free mesas over comparable “stepped” counterparts. Despite the intense EL from the step-free devices, significant leakage was observed through the periphery of the device, possibly due to the lack of GaN junction isolation processing.
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85.60.Jb Light-emitting devices
78.60.Fi Electroluminescence
78.66.Fd III-V semiconductors

Fabrication and characterization of the piezoelectric microtransformer based on microelectromechanical systems

Seong Kon Kim and Young Ho Seo

Appl. Phys. Lett. 88, 263510 (2006); http://dx.doi.org/10.1063/1.2218056 (3 pages) | Cited 6 times

Online Publication Date: 27 June 2006

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In this letter, the design, fabrication, and characterization of a novel piezoelectric microtransformer with bar geometry are presented. The piezoelectric microtransformers were fabricated using PZT thin films and microelectromechanical system technologies. The dimensions of these devices are 1000×400×5.8 μm3 (length×width×thickness). The dynamic displacement of around 9.2±0.064 μm was observed at 10Vac. The dynamic displacement varied almost linearly with voltage. When driven at the input voltage of 3Vac, the output voltage of the piezoelectric microtransformer was 6.4Vac at the resonant frequency (Fr), 8.006 kHz and load resistance (RL), 1 MΩ. The average voltage gain (step-up ratio) was approximately 2.13.
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85.50.-n Dielectric, ferroelectric, and piezoelectric devices
85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices

Patterned field induced polymer walls for smectic A bistable flexible displays

N. Gheorghiu, J. L. West, A. V. Glushchenko, and M. Mitrokhin

Appl. Phys. Lett. 88, 263511 (2006); http://dx.doi.org/10.1063/1.2218274 (3 pages) | Cited 8 times

Online Publication Date: 27 June 2006

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We have obtained a polymer wall-stabilized smectic A liquid crystal to be used for bistable flexible displays. The polymer wall structure optimally connects the two substrates together, thus providing maximum flexibility as compared to the polymer dispersed liquid crystal. Moreover, all the intrinsic bistable properties of the smectic A material are preserved. We analyzed the pixel performance and demonstrated very good electro-optical characteristics, high contrast ratio, and excellent stability of the states. The polymer wall-stabilized smectic A on flexible substrates has high potential to be used as electronic paper.
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42.79.Kr Display devices, liquid-crystal devices
85.60.Pg Display systems
42.70.Df Liquid crystals
61.30.-v Liquid crystals
61.41.+e Polymers, elastomers, and plastics

Vertical alignment of liquid crystal on a-SiOx thin film using the ion beam exposure

Phil Kook Son, Jeung Hun Park, Sung Su Cha, Jae Chang Kim, Tae-Hoon Yoon, Soon Joon Rho, Baek Kyun Jeon, Jang Sub Kim, Soon Kwon Lim, and Kyeong Hyeon Kim

Appl. Phys. Lett. 88, 263512 (2006); http://dx.doi.org/10.1063/1.2218107 (3 pages) | Cited 23 times

Online Publication Date: 28 June 2006

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In this letter we demonstrate the vertical alignment of liquid crystal on inorganic thin film surfaces using the ion beam exposure. Nematic liquid crystal can be aligned vertically by the rotational oblique evaporation of a-SiOx thin films. However, the electro-optic switching behavior of liquid crystal along random directions results in disclination lines. By using the ion beam exposure, we can achieve highly uniform alignment without disclination lines. We found from x-ray diffraction and x-ray photoemission spectroscopy data that the vertical alignment can be achieved when x approaches 1.5 at the a-SiOx film surface. We have shown that the pretilt angle can be controlled by changing ion beam parameters, such as the ion beam energy, the angle of incidence, and the exposure time. We also have shown that a liquid crystal cell aligned vertically by the ion beam exposure exhibits the voltage-transmittance curve similar to that of a rubbed polyimide cell.
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61.30.Gd Orientational order of liquid crystals; electric and magnetic field effects on order
42.70.Df Liquid crystals
61.30.Jf Defects in liquid crystals
61.30.Hn Surface phenomena: alignment, anchoring, anchoring transitions, surface-induced layering, surface-induced ordering, wetting, prewetting transitions, and wetting transitions
61.80.Jh Ion radiation effects
81.65.-b Surface treatments

Nanoscale strain analysis of strained-Si metal-oxide-semiconductor field effect transistors by large angle convergent-beam electron diffraction

H. H. Liu, X. F. Duan, X. Y. Qi, Q. X. Xu, H. O. Li, and H. Qian

Appl. Phys. Lett. 88, 263513 (2006); http://dx.doi.org/10.1063/1.2217136 (3 pages) | Cited 8 times

Online Publication Date: 29 June 2006

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In this letter we report the characterization of local compressive strain in p-type strained-silicon channel metal-oxide-semiconductor field effect transistors by large angle convergent-beam electron diffraction. The compressive strain was induced into the channel region of gate length of 80 nm strained-Si p-type metal-oxide-semiconductor field effect transistor by Ge preamorphization implantation for source/drain extension. A method to distinguish between compressive strain and shear strain in the cross-sectional transmission electron microscopy specimens is proposed.
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85.30.Tv Field effect devices

Passivation of boron emitters on n-type silicon by plasma-enhanced chemical vapor deposited silicon nitride

Florence W. Chen, Tsu-Tsung A. Li, and Jeffrey E. Cotter

Appl. Phys. Lett. 88, 263514 (2006); http://dx.doi.org/10.1063/1.2217167 (3 pages) | Cited 8 times

Online Publication Date: 29 June 2006

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A well-passivated emitter is crucial to making high efficiency solar cells. With several reported potential benefits in using n-type silicon compared to p-type silicon for solar cell applications, there is a need to investigate silicon nitride passivation on boron-diffused emitters. The passivation of plasma-enhanced chemical vapor deposited silicon nitride with different refractive indices on a variety of boron doping profiles on 1 Ω cm, float zoned, n-type silicon is studied. Contrary to the general perceptions that silicon nitride provides relatively poor passivation on boron-diffused surfaces, our results show that for some diffusion sheet resistances and with sufficient annealing, silicon nitride can be particularly well suited for passivating boron emitters. One-sun implied open circuit voltages of 663 and 718 mV and dark saturation current densities of 25 and 13 fA/cm2 per side are achieved by silicon nitride passivation on moderately doped boron emitters (100 Ω/sq) and lightly doped boron emitters (240 Ω/sq), respectively.
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81.65.Rv Passivation
61.72.S- Impurities in crystals
61.72.uj III-V and II-VI semiconductors
66.30.J- Diffusion of impurities
61.72.Cc Kinetics of defect formation and annealing
61.72.uf Ge and Si

Field-mediated self-assembly and actuation of highly parallel microfluidic devices

S. Bleil, D. W. M. Marr, and C. Bechinger

Appl. Phys. Lett. 88, 263515 (2006); http://dx.doi.org/10.1063/1.2217168 (3 pages) | Cited 20 times

Online Publication Date: 29 June 2006

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We present a macroscopic approach for the fabrication and actuation of microscale pumps in microfluidic environments. By applying a combination of rotating and static magnetic fields we overcome two fundamental issues preventing development of nanoscale systems: how does one assemble components in situ and how does one power these devices once in place? By using macroscopic fields we avoid the need for individual particle micromanipulation allowing for both scale down to the nanoscale and “scale up” to the simultaneous assembly and control of highly parallel device networks.
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07.10.Cm Micromechanical devices and systems
85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices
07.07.Tw Servo and control equipment; robots
47.85.Np Fluidics
47.61.Fg Flows in micro-electromechanical systems (MEMS) and nano-electromechanical systems (NEMS)
47.60.-i Flow phenomena in quasi-one-dimensional systems

Switching in C60-fullerene based field effect transistors

G. J. Matt, Th. B. Singh, N. S. Sariciftci, A. Montaigne Ramil, and H. Sitter

Appl. Phys. Lett. 88, 263516 (2006); http://dx.doi.org/10.1063/1.2216869 (3 pages) | Cited 7 times

Online Publication Date: 30 June 2006

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We are reporting on the electrical properties of a bottom gate C60-fullerene based n-channel organic field effect transistor. The C60 thin film was epitaxially grown using hot wall epitaxy on top of an organic dielectric divinyltetramethyldisiloxane-bis(benzocyclobutene). The device performance depends on the growth parameters during the C60 film growth. Optimization of the growth parameters leads to a C60 film of a low total number of traps, and the drain-source current is increased by two orders in magnitude. We propose that the high current-densities are caused by space charge limited currents beside the gate induced space charge.
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85.65.+h Molecular electronic devices

Metal printing with modified polymer bonding lithography

Xinhong Yu, Shunyang Yu, Zhe Wang, Dongge Ma, and Yanchun Han

Appl. Phys. Lett. 88, 263517 (2006); http://dx.doi.org/10.1063/1.2218818 (3 pages) | Cited 14 times

Online Publication Date: 30 June 2006

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A simple and versatile metal thin film patterning method is introduced, using the adhesion between polymer and metal thin film as the driving force. Solvent vapor treatment is used to increase the adhesive ability between polymer and metal film in two reverse processes. After selective transfer printing, metal patterns on polymer film or flat elastomeric stamp can be fabricated. Multilayer metal patterns can also be fabricated with this method through multiple printing. Finally, this method was used to fabricate polymer field-effect transistors. The discussions on the effects of solvent on the transistor performance have been given.
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81.16.Rf Micro- and nanoscale pattern formation
85.40.Hp Lithography, masks and pattern transfer
68.35.Np Adhesion
85.30.Tv Field effect devices
81.16.Nd Micro- and nanolithography

Capacitance-voltage studies on enhancement-mode InGaAs metal-oxide-semiconductor field-effect transistor using atomic-layer-deposited Al2O3 gate dielectric

Y. Xuan, H. C. Lin, P. D. Ye, and G. D. Wilk

Appl. Phys. Lett. 88, 263518 (2006); http://dx.doi.org/10.1063/1.2217258 (3 pages) | Cited 61 times

Online Publication Date: 30 June 2006

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Atomic layer deposition (ALD) Al2O3 is a high-quality gate dielectric on III-V compound semiconductor with low defect density, low gate leakage, and high thermal stability. The high-quality of Al2O3/InGaAs interface surviving from high temperature annealing is verified by excellent capacitance-voltage (CV) curves showing sharp transition from depletion to accumulation with “zero” hysteresis, 1% frequency dispersion per decade at accumulation capacitance, and strong inversion at split CV measurement. An enhancement-mode n-channel InGaAs metal-oxide-semiconductor field-effect-transistor is also demonstrated by forming true inversion channel at Al2O3/InGaAs interface.
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85.30.Tv Field effect devices
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
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