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26 Jun 2006

Volume 88, Issue 26, Articles (26xxxx)

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Appl. Phys. Lett. 88, 261107 (2006); http://dx.doi.org/10.1063/1.2213912 (3 pages)

Stanley S. Hong, Berthold K. P. Horn, Dennis M. Freeman, and Michael S. Mermelstein
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Noncontact electrical metrology of Cu/low-k interconnect for semiconductor production wafers

Vladimir V. Talanov, André Scherz, and Andrew R. Schwartz

Appl. Phys. Lett. 88, 262901 (2006); http://dx.doi.org/10.1063/1.2216898 (3 pages) | Cited 4 times

Online Publication Date: 26 June 2006

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We have demonstrated a technique capable of in-line measurement of dielectric constant of low-k interconnect films on patterned wafers utilizing a test key of ∼ 50×50 μm2 in size. The test key consists of a low-k film backed by a Cu grid with >50% metal pattern density and <0.25 μm pitch, which is fully compatible with the existing dual-damascene interconnect manufacturing processes. The technique is based on a near-field scanned microwave probe and is noncontact, noninvasive, and requires no electrical contact to or grounding of the wafer under test. It yields <0.3% precision and ±2% accuracy for the film dielectric constant.
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85.40.Ls Metallization, contacts, interconnects; device isolation
84.37.+q Measurements in electric variables (including voltage, current, resistance, capacitance, inductance, impedance, and admittance, etc.)
77.55.-g Dielectric thin films
07.68.+m Photography, photographic instruments; xerography
77.22.Ch Permittivity (dielectric function)

Ferroelectricity in the Dion-Jacobson CsBiNb2O7 from first principles

Craig J. Fennie and Karin M. Rabe

Appl. Phys. Lett. 88, 262902 (2006); http://dx.doi.org/10.1063/1.2218040 (3 pages) | Cited 1 time

Online Publication Date: 26 June 2006

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We have studied ferroelectricity in Dion-Jacobson CsBiNb2O7 from first principles. Using group-theoretical analysis and first-principles density functional calculations of the total energy and phonons, we perform a systematic study of the energy surface around a paraelectric prototypic phase. Our results suggest that CsBiNb2O7 is a ferroelectric with a polarization of Ps = 40 μC cm−2. We propose further experiments to clarify this point.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.80.-e Ferroelectricity and antiferroelectricity
63.20.-e Phonons in crystal lattices
68.35.Md Surface thermodynamics, surface energies
77.22.Ej Polarization and depolarization

Surface scanning probe microscopy investigation of solution deposited BiFeO3 thin films

S. Habouti, C. Solterbeck, and M. Es-Souni

Appl. Phys. Lett. 88, 262903 (2006); http://dx.doi.org/10.1063/1.2212280 (3 pages) | Cited 6 times

Online Publication Date: 27 June 2006

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Thin films of the multiferroic perovskite-type oxide BiFeO3 were processed via solution deposition. The annealing schedule was chosen so as to give large and fine grained thin films. Microstructure, polarization, and dielectric properties are reported. It is shown that the large grained film is characterized by poor dielectric properties. Both microstructures show, however, poor polarization characteristics. Surface scanning potential microscopy reveals areas of high and low surface potentials in both specimens with a pronounced effect in the large grained films. It is thought that these areas are indirectly responsible for the poor polarization properties of the processed BiFeO3 films.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.55.-g Dielectric thin films
77.80.-e Ferroelectricity and antiferroelectricity
77.22.Ej Polarization and depolarization
81.40.Gh Other heat and thermomechanical treatments
68.37.-d Microscopy of surfaces, interfaces, and thin films

Application of the interface capacitance model to thin-film relaxors and ferroelectrics

M. Tyunina and J. Levoska

Appl. Phys. Lett. 88, 262904 (2006); http://dx.doi.org/10.1063/1.2218321 (3 pages) | Cited 18 times

Online Publication Date: 27 June 2006

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The interface capacitance model is briefly revised. It is emphasized that this is a device model related to the boundary condition for polarization and unable to explain the thickness evolution of the ferroelectric properties. The model can be applied to extract the properties of the film from those measured in the capacitor. The interface parameters are found to be temperature independent. The coupling of the film with the interface and the electrode is shown to result in the measured frequency dependent permittivity totally different from that of the film.
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77.80.-e Ferroelectricity and antiferroelectricity
77.55.-g Dielectric thin films
77.22.Ch Permittivity (dielectric function)
77.22.Ej Polarization and depolarization

Local structure and medium-range ordering in relaxor ferroelectric Pb(Zn1/3Nb2/3)O3 studied using neutron pair distribution function analysis

I.-K. Jeong and J. K. Lee

Appl. Phys. Lett. 88, 262905 (2006); http://dx.doi.org/10.1063/1.2217162 (3 pages) | Cited 13 times

Online Publication Date: 28 June 2006

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We studied an evolution of local structure and medium-range ordering in relaxor ferroelectric Pb(Zn1/3Nb2/3)O3 (PZN) from 550 to 15 K using neutron pair distribution function analysis. We show that the local structure of PZN is distorted at all temperatures studied. With decreasing temperature, a medium-range ordering of local polarizations develops with no global rhombohedral phase transition below TM. Instead, the crystal structure can be described as a mixture of polar nanoregions in a disordered lattice, similar to the case of Pb(Mg1/3Nb2/3)O3.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.80.-e Ferroelectricity and antiferroelectricity
61.66.Fn Inorganic compounds
64.70.K- Solid-solid transitions

Dielectric and optical properties of epitaxial rare-earth scandate films and their crystallization behavior

H. M. Christen, G. E. Jellison, I. Ohkubo, S. Huang, M. E. Reeves, E. Cicerrella, J. L. Freeouf, Y. Jia, and D. G. Schlom

Appl. Phys. Lett. 88, 262906 (2006); http://dx.doi.org/10.1063/1.2213931 (3 pages) | Cited 28 times

Online Publication Date: 29 June 2006

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Rare-earth scandates (ReScO3, with Re = Y, La, Pr, Nd, Sm, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu, i.e., the entire series for which the individual oxides are chemically stable in contact with Si) were deposited in a temperature-gradient pulsed laser deposition system onto LaAlO3 substrates. The crystallization temperature depends monotonically on the Re atomic number and the Goldschmidt tolerance factor, with crystallization temperatures as low as 650 °C for LaScO3 and PrScO3. The dielectric constants of the crystalline films K ≈ 30 (determined by microwave microscopy) are significantly larger than those of their amorphous counterparts. In combination with the large observed band gaps (Eg>5.5 eV, determined by ellipsometry), these results indicate the potential of these materials as high-K dielectrics for field-effect transistor applications.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.55.-g Dielectric thin films
77.22.Ch Permittivity (dielectric function)
81.15.Fg Pulsed laser ablation deposition
78.66.Nk Insulators

Ferroelectric behavior in nominally relaxor lead lanthanum zirconate titanate thin films prepared by chemical solution deposition on copper foil

Taeyun Kim, Jacqueline N. Hanson, Alexei Gruverman, Angus I. Kingon, and S. K. Streiffer

Appl. Phys. Lett. 88, 262907 (2006); http://dx.doi.org/10.1063/1.2217254 (3 pages) | Cited 15 times

Online Publication Date: 29 June 2006

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We demonstrate that (Pb0.9La0.1)(Zr0.65Ti0.35)0.975O3 (PLZT) (10/65/35) thin films that have a nominally relaxor composition and that are deposited by chemical solution deposition onto copper foil show polarization hysteresis. Ferroelectric domain switching and a shift in Curie temperature are also observed. This is in contrast to the non-hysteretic behavior of films with identical composition prepared on Pt/SiO2/Si substrates. This suggests that the mismatch in coefficient of thermal expansion between PLZT and copper induces a compressive strain in the PLZT during cooling after high temperature crystallization under low pO2, and causes an out-of-plane polarization.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.55.-g Dielectric thin films
77.80.B- Phase transitions and Curie point
77.80.Dj Domain structure; hysteresis
77.80.Fm Switching phenomena
77.22.Ej Polarization and depolarization

Room temperature ferroelectric properties of Mn-substituted BiFeO3 thin films deposited on Pt electrodes using chemical solution deposition

S. K. Singh, H. Ishiwara, and K. Maruyama

Appl. Phys. Lett. 88, 262908 (2006); http://dx.doi.org/10.1063/1.2218819 (3 pages) | Cited 128 times

Online Publication Date: 30 June 2006

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Mn-substituted BiFeO3 (BFO) thin films were fabricated by chemical solution deposition on Pt/Ti/SiO2/Si(100) structures. X-ray diffraction analysis revealed that the BFO lattice was somewhat distorted when 5% of Fe atoms were substituted with Mn atoms, but no secondary phase appeared by Mn substitution up to 20%. The leakage current density at higher electric field than 0.6 MV/cm decreased by Mn substitution of 3%–5%, compared with a pure BFO film. Because of the low leakage current density in the high electric field region, well saturated polarization hysteresis loops with remanent polarization of 100 μC/cm2 were observed in the 5% Mn-substituted BFO films at a measurement frequency of 1 kHz.
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77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
77.55.-g Dielectric thin films
81.05.-t Specific materials: fabrication, treatment, testing, and analysis
77.80.-e Ferroelectricity and antiferroelectricity
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
68.55.A- Nucleation and growth

Study on the interface thermal stability of metal-oxide-semiconductor structures by inelastic electron tunneling spectroscopy

Chih-Feng Huang, Bing-Yue Tsui, Pei-Jer Tzeng, Lurng-Shehng Lee, and Ming-Jinn Tsai

Appl. Phys. Lett. 88, 262909 (2006); http://dx.doi.org/10.1063/1.2219140 (3 pages) | Cited 1 time

Online Publication Date: 30 June 2006

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The bias polarity-dependent inelastic electron tunneling spectroscopy is employed to detect the thermal stability of the Ta–Pt/SiO2/Si and Ta–Pt/HfO2/Si structures. This work provides a direct evidence that the Fermi-level pinning of metal gates is counted for the generation of extrinsic states due to interface interaction. A Ta2O5 layer forms at the Ta–Pt/SiO2 interface during thermal annealing whereas only an intermittent Ta–O bond is observed at the Ta–Pt/HfO2 interface. Although the heat of formation of HfO2 is lower than that of SiO2, Si presumably diffuses into HfO2 layer and replaces Hf atoms during the high-temperature annealing.
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68.60.Dv Thermal stability; thermal effects
73.20.At Surface states, band structure, electron density of states
61.72.Cc Kinetics of defect formation and annealing
68.35.Fx Diffusion; interface formation
66.30.Ny Chemical interdiffusion; diffusion barriers
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