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26 Jun 2006

Volume 88, Issue 26, Articles (26xxxx)

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Appl. Phys. Lett. 88, 261107 (2006); http://dx.doi.org/10.1063/1.2213912 (3 pages)

Stanley S. Hong, Berthold K. P. Horn, Dennis M. Freeman, and Michael S. Mermelstein
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Effect of point defect and Mn concentration in time-resolved differential reflection in GaMnAs

Shin Kim, Eunsoon Oh, J. U. Lee, D. S. Kim, S. Lee, and J. K. Furdyna

Appl. Phys. Lett. 88, 262101 (2006); http://dx.doi.org/10.1063/1.2216108 (3 pages) | Cited 4 times

Online Publication Date: 26 June 2006

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We measured the transmission spectra and the time-resolved differential reflectivity ΔR in Ga1−xMnxAs for x ⩽ 0.05 for several excitation wavelengths. The sign of ΔR in Ga1−xMnxAs (x = 0.015 and x = 0.03) was negative for photon energy larger than band gap at room temperature. The negative component of ΔR was explained by defect induced absorption and/or the reduction of exciton bleaching, rather than by the change in density of near band edge states associated with Mn incorporation. For Ga0.95Mn0.05As, absorption edge broadening was observed in the transmission spectra and the induced absorption effect was reduced by the screening of Mn local potential by photocarriers.
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75.50.Pp Magnetic semiconductors
78.47.-p Spectroscopy of solid state dynamics
78.66.Fd III-V semiconductors
71.20.Nr Semiconductor compounds
75.50.Dd Nonmetallic ferromagnetic materials
61.72.J- Point defects and defect clusters

Effect of oxygen plasma treatment on reduction of contact resistivity at pentacene/Au interface

Woong-Kwon Kim and Jong-Lam Lee

Appl. Phys. Lett. 88, 262102 (2006); http://dx.doi.org/10.1063/1.2218044 (3 pages) | Cited 16 times

Online Publication Date: 27 June 2006

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We report the reduction of contact resistivity between Au and pentacene by O2 plasma treatment. Contact resistance dramatically reduced from 5.65 to 0.22 MΩ cm by the treatment. O2 plasma treatment transformed Au to AuOx, increasing the surface energy from 45.1 to 71.5 mJ/m2. Molecular adsorption geometry of pentacene on AuOx changed from a planar structure to an upright type, improving crystallinity and molecular packing. Thus, defects and traps at the interface were reduced, decreasing the contact resistance between Au and pentacene.
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73.40.Cg Contact resistance, contact potential
52.77.-j Plasma applications
68.35.Md Surface thermodynamics, surface energies

p-type behavior in nominally undoped ZnO thin films by oxygen plasma growth

Y. J. Zeng, Z. Z. Ye, W. Z. Xu, J. G. Lu, H. P. He, L. P. Zhu, B. H. Zhao, Y. Che, and S. B. Zhang

Appl. Phys. Lett. 88, 262103 (2006); http://dx.doi.org/10.1063/1.2217165 (3 pages) | Cited 34 times

Online Publication Date: 28 June 2006

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We report on intrinsic p-type ZnO thin films by plasma-assisted metal-organic chemical vapor deposition. The optimal results give a resistivity of 12.7 Ω cm, a Hall mobility of 2.6 cm2/V s, and a hole concentration of 1.88×1017 cm−3. The oxygen concentration is increased in the intrinsic p-type ZnO, compared with the n-type layer. Two acceptor states, with the energy levels located at 160 and 270 meV above the valence band maximum, are identified by temperature-dependent photoluminescence. The origin of intrinsic p-type behavior has been ascribed to the formation of zinc vacancy and some complex acceptor center.
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81.05.Dz II-VI semiconductors
73.61.Ga II-VI semiconductors
52.77.Dq Plasma-based ion implantation and deposition
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.15.Kk Vapor phase epitaxy; growth from vapor phase
78.66.Hf II-VI semiconductors

Alternative precursor metal-organic chemical vapor deposition of InGaAs/GaAs quantum dot laser diodes with ultralow threshold at 1.25 μm

A. Strittmatter, T. D. Germann, Th. Kettler, K. Posilovic, U. W. Pohl, and D. Bimberg

Appl. Phys. Lett. 88, 262104 (2006); http://dx.doi.org/10.1063/1.2218059 (3 pages) | Cited 6 times

Online Publication Date: 28 June 2006

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Laser diodes based on InGaAs quantum dots (QDs) operating at 1250 nm with ultralow threshold current densities of 66 A/cm2, transparency current densities of 10 A/cm2 per quantum dot layer, and high internal quantum efficiencies of 94% have been realized using alternative precursor metal-organic chemical vapor deposition. Photoluminescence of the active QD stacks clearly indicates the requirement of varying growth parameters for subsequently deposited QD layers. The excellent performance of the QD lasers was obtained by adjusting the number of stacked QD layers to a limit given by the In content of the InGaAs strain-reducing layers grown on the QDs and individual durations of the growth interruption after deposition for each QD layer.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
78.55.Cr III-V semiconductors

Effects of As and Mn doping on microstructure and electrical conduction in ZnO films

K. Lord, T. M. Williams, D. Hunter, K. Zhang, J. Dadson, and A. K. Pradhan

Appl. Phys. Lett. 88, 262105 (2006); http://dx.doi.org/10.1063/1.2217257 (3 pages) | Cited 11 times

Online Publication Date: 29 June 2006

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We report the synthesis of epitaxial As-doped ZnO and Mn-doped (ZnAs)O films by pulsed-laser deposition technique. The grain size in (ZnAs)O films decreases from 40 to less than 10 nm upon Mn doping, illustrating that Mn acts as a potential catalyst to create nanosize grains. Temperature dependent electrical resistance shows metal-insulator transition and metal-semiconductor transition (MST) at 165 and 115 K, respectively, in (ZnAs)O, although Mn doping suppresses MST completely. Both ionization efficiency on oxygen vacancies and percolation of charge carriers may be responsible for such transitions. In addition, electrical conduction in these films shows strong aging effects.
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73.61.Ga II-VI semiconductors
61.72.uj III-V and II-VI semiconductors
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
72.60.+g Mixed conductivity and conductivity transitions
61.72.J- Point defects and defect clusters
81.40.Cd Solid solution hardening, precipitation hardening, and dispersion hardening; aging

Thermoelectric properties of doped titanium disulfides

Edward E. Abbott, Joseph W. Kolis, Nathan D. Lowhorn, William Sams, Apparao Rao, and Terry M. Tritt

Appl. Phys. Lett. 88, 262106 (2006); http://dx.doi.org/10.1063/1.2217190 (3 pages) | Cited 3 times

Online Publication Date: 30 June 2006

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We report herein the doping of titanium disulfide (TiS2) with the pnictides (Pn): P, As, and Sb. The incorporation of these pnictides into titanium disulfide (TiS2−xPnx) is performed at extremely low concentrations (x ∼ 0.2%). The effects on the electronic transport of titanium disulfide by doping with arsenic is quite profound, reducing the resistivity and thermopower to 0.2 mΩ cm and −35 μV/K at 300 K, respectively, from 1.8 mΩ cm and −170 μV/K at 300 K for the parent compound TiS2. For a wide range of thermopower values we find that the thermopower (α) of these doped titanium disulfides is linearly related to the infrared reflectivity minimum and can be correlated by the experimentally determined proportionality of λ = −0.0457α, where λ is the wavelength of the minimum.
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72.20.Pa Thermoelectric and thermomagnetic effects
61.72.S- Impurities in crystals
78.30.Hv Other nonmetallic inorganics
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