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26 Jun 2006

Volume 88, Issue 26, Articles (26xxxx)

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Appl. Phys. Lett. 88, 261107 (2006); http://dx.doi.org/10.1063/1.2213912 (3 pages)

Stanley S. Hong, Berthold K. P. Horn, Dennis M. Freeman, and Michael S. Mermelstein
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Effects of magnetic substrates on ac losses of YBa2Cu3O7 films in perpendicular ac magnetic fields

Masaki Suenaga and Qiang Li

Appl. Phys. Lett. 88, 262501 (2006); http://dx.doi.org/10.1063/1.2218305 (3 pages) | Cited 15 times

Online Publication Date: 27 June 2006

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Effects of a magnetic substrate on the ac losses of superconducting films were investigated by measuring the losses for octagonal disks of an YBa2Cu3O7 layer on a magnetic Ni–5 at. % W substrate in perpendicular ac magnetic fields at 20 Hz and 77 K. At low fields, the losses depended on ac magnetic field amplitude B and film thickness t as ∝B3/t instead of ∝B4/t3 for a superconducting film on a nonmagnetic substrate. These results are described by considering the formation of a virtual infinite stack of superconducting films due to the magnetic mirror effect.
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74.78.-w Superconducting films and low-dimensional structures
74.25.Ha Magnetic properties including vortex structures and related phenomena
74.72.-h Cuprate superconductors

Double-side superconducting MgB2 films for microwave and electronic applications

Li-ping Chen, Li-li Ding, Qing-rong Feng, Guang-cheng Xiong, Yun-fei Wang, Sheng Luo, Xue-qiang Zhang, and Yu-sheng He

Appl. Phys. Lett. 88, 262502 (2006); http://dx.doi.org/10.1063/1.2216900 (3 pages) | Cited 4 times

Online Publication Date: 28 June 2006

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Double-side superconducting MgB2 films have been grown on double-side polished sapphire substrates by using hybrid physical-chemical vapor deposition method. The zero resistance temperatures TC(0)>37 K and the critical current densities JC(5 K,0 T)>3×106 A/cm2 have been achieved for both sides. In the first 8.73 G MgB2 microstrip resonator fabricated by a double-side film, an unloaded Q value of 3400 at 11 K was obtained corresponding to surface resistance of 1.2 mΩ for the MgB2/Al2O3 interface. By simply using a sapphire substrate with two polished holes, superconducting connection has been achieved for the double-side MgB2 film. The results show potential applications for the superconducting MgB2 films in microwave and electronic devices.
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74.78.-w Superconducting films and low-dimensional structures
74.25.F- Transport properties
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
74.25.Sv Critical currents
74.25.N- Response to electromagnetic fields

High tunnel magnetoresistance in fully epitaxial magnetic tunnel junctions with a full-Heusler alloy Co2Cr0.6Fe0.4Al thin film

Takao Marukame, Takayuki Ishikawa, Ken-Ichi Matsuda, Tetsuya Uemura, and Masafumi Yamamoto

Appl. Phys. Lett. 88, 262503 (2006); http://dx.doi.org/10.1063/1.2217166 (3 pages) | Cited 51 times

Online Publication Date: 28 June 2006

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Fully epitaxial magnetic tunnel junctions (MTJs) were fabricated with a Co-based full-Heusler alloy Co2Cr0.6Fe0.4Al (CCFA) thin film, whose composition was close to the stoichiometric one, and a MgO tunnel barrier. Cross-sectional high-resolution transmission electron microscope observations indicated that all layers of the CCFA/MgO/Co50Fe50 MTJ layer structure were grown epitaxially and were single crystalline. The microfabricated CCFA/MgO/Co50Fe50 MTJs exhibited high tunnel magnetoresistance (TMR) ratios of 90% at room temperature and 240% at 4.2 K. A high tunneling spin polarization of 0.79 at 4.2 K was obtained for the epitaxial CCFA films from the TMR ratios.
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73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)
75.47.Np Metals and alloys
75.47.Lx Magnetic oxides
72.25.Mk Spin transport through interfaces
68.55.-a Thin film structure and morphology
73.61.At Metal and metallic alloys

Detection of 0.5 THz radiation from intrinsic Bi2Sr2CaCu2O8 Josephson junctions

I. E. Batov, X. Y. Jin, S. V. Shitov, Y. Koval, P. Müller, and A. V. Ustinov

Appl. Phys. Lett. 88, 262504 (2006); http://dx.doi.org/10.1063/1.2214157 (3 pages) | Cited 35 times

Online Publication Date: 28 June 2006

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We report the detection of electromagnetic radiation at about 500 GHz from current-biased intrinsic Bi2Sr2CaCu2O8 single crystal Josephson junctions. We used two silicon lenses to quasioptically couple radiation from our samples to an integrated superconducting heterodyne receiver. The estimated maximum Josephson radiation power which reached the receiver antenna was about 1 pW. We attribute the observed radiation to individual Josephson junctions of the stack and discuss a possibility of the phase locking of a larger number of junctions.
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85.25.Pb Superconducting infrared, submillimeter and millimeter wave detectors
85.25.Cp Josephson devices

Low power scaling using parallel coupling for toggle magnetic random access memory

David W. Abraham and D. C. Worledge

Appl. Phys. Lett. 88, 262505 (2006); http://dx.doi.org/10.1063/1.2217236 (3 pages) | Cited 5 times

Online Publication Date: 29 June 2006

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Toggle-switched magnetic random access memory devices offer wide write margins and robustness against thermally activated switching but are as yet unproven regarding the feasibility of scaling down from present sizes with acceptable write currents. We present a strategy for reducing switching fields by using parallel coupling between the two magnetic free layers, in contrast to the usual antiferromagnetic coupling previously discussed. Combined with the proper free layer magnetic material and offset fields from a carefully imbalanced pinned layer, we present experimental verification of toggling of 130 nm diameter magnetic tunnel junctions at fields of less than 50 Oe.
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85.75.Dd Magnetic memory using magnetic tunnel junctions
85.70.Kh Magnetic thin film devices: magnetic heads (magnetoresistive, inductive, etc.); domain-motion devices, etc.
84.30.Sk Pulse and digital circuits

Large room temperature magnetization in nanocrystalline zinc ferrite thin films

Murtaza Bohra, Shiva Prasad, Naresh Kumar, D. S. Misra, S. C. Sahoo, N. Venkataramani, and R. Krishnan

Appl. Phys. Lett. 88, 262506 (2006); http://dx.doi.org/10.1063/1.2217253 (3 pages) | Cited 28 times

Online Publication Date: 29 June 2006

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Zinc ferrite films were deposited on fused quartz substrate at different temperatures using pulsed laser ablation (PLA) and rf sputtering. X-ray diffraction indicated that all the films were single phase ZnFe2O4 with grain growing in the range of 8–80 nm with substrate temperature. The nanocrystalline films were found to be magnetic and the spontaneous magnetization showed a strong dependence on the grain size, dropping sharply for films with larger grains. A PLA thin film deposited in vacuum at 500 °C exhibited a room temperature magnetization value of 5560 G.
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75.50.Gg Ferrimagnetics
75.50.Tt Fine-particle systems; nanocrystalline materials
81.07.Bc Nanocrystalline materials
81.15.Cd Deposition by sputtering
81.15.Fg Pulsed laser ablation deposition
68.55.A- Nucleation and growth
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